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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

2D nanoconfinement distorts the solvation structure of hydroxide but not of hydronium

Understanding ion-specific behavior in nanoconfined water is essential for controlling charge transport and selectivity in two-dimensional membranes. Motivated by recent experiments revealing anomalous dielectric and transport behavior of water confined between hBN sheets, we use machine-learning-accelerated first-principles molecular dynamics to investigate the interfacial propensities of hydronium and hydroxide ions under similar confinement. We find that hydronium remains interfacial across all confinement regimes, whereas hydroxide shifts toward the interior as the environment becomes more bulk-like. This contrasting behavior reflects the combined influence of hydrogen bonding, interfacial water layering, and the polarization of hBN, which collectively stabilize hydronium at the surface while making hydroxide slightly more favorable within the structured interior. These findings expose an asymmetry in ion-surface coupling and establish a microscopic origin for hydronium’s enhanced interfacial affinity. The results provide mechanistic insight into ion partitioning in two-dimensional channels and highlight the collective structuring of confined water as a key determinant of interfacial ion thermodynamics.

organic↗
DOE OSTI2021

Methods to accelerate high-throughput screening of atomic qubit candidates in van der Waals materials

The discovery of atom-like spin emitters associated with defects in two-dimensional (2D) wide-bandgap (WBG) semiconductors presents new opportunities for highly tunable and versatile qubits. So far, the study of such spin emitters has focused on defects in hexagonal boron nitride (hBN). However, hBN necessarily contains a high density of nuclear spins, which are expected to create a strong incoherent spin-bath that leads to poor coherence properties of spins hosted in the material. Therefore, identification of new qubit candidates in other 2DWBG materials is necessary. Given the time demands of ab initio methods, new approaches for rapid screening and calculations of identifying properties of suitable atom-like qubits are required. In this work, we present two new methods for rapid estimation of the zero-phonon line (ZPL), a key property of atomic qubits in WBG materials. First, the ZPL is calculated by exploiting Janak’s theorem. For finite changes in occupation, we provide the leading-order estimate of the correction to the ZPL obtained using Janak’s theorem, which is more rapid than the standard method (ΔSCF). Next, we demonstrate an approach to converging excited states that is faster for systems with small strain than the standard approach used in the ΔSCF method. We illustrate these methods using the case of the singly negatively charged calcium vacancy in SiS2, which we are the first to propose as a qubit candidate. This work has the potential to assist in accelerating the high-throughput search for quantum defects in materials, with applications in quantum sensing and quantum computing.

Kuate Defo, Rodrick (ORCID:0000000242788196)↗
DOE OSTI2026

Structural characterization of neutron irradiated hexagonal boron-10 nitride-15 single crystals

The negatively charged boron vacancy ($V$$^{–}_{⁠B}$⁠) in hexagonal boron nitride (hBN) is a promising quantum defect that can be used to sense pressure, temperature, and magnetic field with high spatial resolution. hBN enriched with the boron-10 and nitrogen-15 isotopes, denoted h 10 B 15 N, has good contrast and coherence for quantum sensing because nitrogen-15 has nuclear spin (1/2), reducing hyperfine interactions. Boron vacancies can be generated by neutron irradiation, which causes the transmutation of the boron-10 isotope to lithium-7. In this study, the ancillary structural, compositional, and mechanical properties of h 10 B 15 N crystals that have been subjected to neutron irradiation fluences from 1.4 × 10 16 to 8.4 × 10 17 n/cm 2 were thoroughly characterized. Besides creating $V$$^{–}_{⁠B}$⁠, the process also induces other defects that generate strain in the crystal lattice. In turn, the mechanical properties of these crystals change drastically. Investigated here are the visual changes, lattice integrity, composition, crystal strain, and elastic constants (C 33 and C 66 ) to assess how these characteristics change as a function of neutron fluence.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Torsional force microscopy of van der Waals moirés and atomic lattices

In a stack of atomically thin van der Waals layers, introducing interlayer twist creates a moiré superlattice whose period is a function of twist angle. Changes in that twist angle of even hundredths of a degree can dramatically transform the system’s electronic properties. Setting a precise and uniform twist angle for a stack remains difficult; hence, determining that twist angle and mapping its spatial variation is very important. Techniques have emerged to do this by imaging the moiré, but most of these require sophisticated infrastructure, time-consuming sample preparation beyond stack synthesis, or both. In this work, we show that torsional force microscopy (TFM), a scanning probe technique sensitive to dynamic friction, can reveal surface and shallow subsurface structure of van der Waals stacks on multiple length scales: the moirés formed between bi-layers of graphene and between graphene and hexagonal boron nitride (hBN) and also the atomic crystal lattices of graphene and hBN. In TFM, torsional motion of an Atomic Force Microscope (AFM) cantilever is monitored as it is actively driven at a torsional resonance while a feedback loop maintains contact at a set force with the sample surface. TFM works at room temperature in air, with no need for an electrical bias between the tip and the sample, making it applicable to a wide array of samples. It should enable determination of precise structural information including twist angles and strain in moiré superlattices and crystallographic orientation of van der Waals flakes to support predictable moiré heterostructure fabrication.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Anomalous thickness-dependent electrical conductivity in van der Waals layered transition metal halide, Nb 3 Cl 8

Understanding the electronic transport properties of layered, van der Waals transition metal halides (TMHs) and chalcogenides is a highly active research topic today. Of particular interest is the evolution of those properties with changing thickness as the 2D limit is approached. Here, we present the electrical conductivity of exfoliated single crystals of the TMH, cluster magnet, Nb 3 Cl 8 , over a wide range of thicknesses both with and without hexagonal boron nitride (hBN) encapsulation. The conductivity is found to increase by more than three orders of magnitude when the thickness is decreased from 280 µm to 5 nm, at 300 K. At low temperatures and below ~50 nm, the conductance becomes thickness independent, implying surface conduction is dominating. Temperature dependent conductivity measurements indicate Nb 3 Cl 8 is an insulator, however, the effective activation energy decreases from a bulk value of 310 meV to 140 meV by 5 nm. X-ray photoelectron spectroscopy (XPS) shows mild surface oxidation in devices without hBN capping, however, no significant difference in transport is observed when compared to the capped devices, implying the thickness dependent transport behavior is intrinsic to the material. A conduction mechanism comprised of a higher conductivity surface channel in parallel with a lower conductivity interlayer channel is discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Spin qubit properties of the boron-vacancy/carbon defect in the two-dimensional hexagonal boron nitride

Spin qubit defects in two-dimensional materials have a number of advantages over those in three-dimensional hosts including simpler technologies for defect creation and control, as well as qubit accessibility. In this work, we select the V B C B defect in the hexagonal boron nitride (hBN) as a possible optically controllable spin qubit and explain its triplet ground state and neutrality. In this defect a boron vacancy is combined with a carbon dopant substituting the closest boron atom to the vacancy. Our density-functional-theory calculations confirmed that the system has dynamically stable spin triplet and singlet ground states. As revealed from our linear response GW calculations, the spin-sensitive electronic states are localized around the three undercoordinated N atoms and make local peaks in the density of electronic states within the bandgap. Using the triplet and singlet ground state energies, as well as the energies of the optically excited states, obtained from solution to the Bethe–Salpeter equation, we construct the spin-polarization cycle, which is found to be favorable for the spin qubit initialization. The calculated zero-field splitting parameters ensure that the splitting energy between the spin projections in the triplet ground state is comparable to that of the known spin qubits. We thus propose the V B C B defect in hBN as a promising spin qubit.

2D BN↗
DOE OSTI2020

Observation of intravalley phonon scattering of 2s excitons in MoSe 2 and WSe 2 monolayers

Abstract We present a high-resolution resonance Raman study of hBN encapsulated MoSe 2 and WSe 2 monolayers at 4 K using excitation energies from 1.6 eV to 2.25 eV. We report resonances with the WSe 2 A2s and MoSe 2 A2s and B2s excited Rydberg states despite their low oscillator strength. When resonant with the 2s states we identify new Raman peaks which are associated with intravalley scattering between different Rydberg states via optical phonons. By calibrating the Raman scattering efficiency and separately constraining the electric dipole matrix elements, we reveal that the scattering rates for k = 0 optical phonons are comparable for both 1s and 2s states despite differences in the envelope functions. We also observe multiple new dispersive Raman peaks including a peak at the WSe 2 A2s resonance that demonstrates non-linear dispersion and peak-splitting behavior that suggests the dispersion relations for dark excitonic states at energies near the 2s state are extremely complex.

Materials Science↗
DOE OSTI2023

Effect of environmental screening and strain on optoelectronic properties of two-dimensional quantum defects

Point defects in hexagonal boron nitride (hBN) are promising candidates as single-photon emitters (SPEs) in nanophotonics and quantum information applications. The precise control of SPEs requires in-depth understanding of their optoelectronic properties. However, how the surrounding environment of host materials, including the number of layers, substrates, and strain, influences SPEs has not been fully understood. Here, in this work, we study the dielectric screening effect due to the number of layers and substrates, and the strain effect on the optical properties of carbon dimer and nitrogen vacancy defects in hBN from first-principles many-body perturbation theory. We report that environmental screening causes a lowering of the quasiparticle gap and exciton binding energy, leading to nearly constant optical excitation energy and exciton radiative lifetime. We explain the results with an analytical model starting from the Bethe–Salpeter equation Hamiltonian with Wannier basis. We also show that optical properties of quantum defects are largely tunable by strain with highly anisotropic response, in good agreement with experimental measurements. Our work clarifies the effect of environmental screening and strain on optoelectronic properties of quantum defects in two-dimensional insulators, facilitating future applications of SPEs and spin qubits in low-dimensional systems.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Interlayer Exciton Condensates between Second Landau Level Orbitals in Double Bilayer Graphene

Here, we present Coulomb-drag measurements on a heterostructure comprising two Bernal-stacked bilayer graphene (BLG) sheets separated by a 2.5 nm hexagonal boron nitride (hBN) spacer in the quantum Hall (QH) regime. Using top and bottom gate control, together with an interlayer bias, we independently tune the two BLG layers into either the lowest (N = 0) or second (N = 1) Landau level (LL) orbital and probe their interlayer QH states. When both layers occupy the N = 0 orbital, we observe both interlayer exciton condensates (ECs) at integer total filling and interlayer fractional QH states, echoing the results in double monolayer graphene. In contrast to previous studies, however, when both BLG layers occupy the N = 1 orbital, we also observe quantized drag signals, signifying an interlayer exciton condensate formed between the second LLs. By tuning the layer degree of freedom, we find that this N = 1 EC state arises only when the N = 1 wave function in each BLG is polarized toward the hBN interface to maximize the interlayer Coulomb interaction.

Electrical conductivity↗
DOE OSTI2022

Electric fields and substrates dramatically accelerate spin relaxation in graphene

Electrons in graphene are theoretically expected to retain spin states much longer than most materials, making graphene a promising platform for spintronics and quantum information technologies. Here, in this work, we use first-principles density-matrix (FPDM) dynamics simulations to show that interaction with electric fields and substrates strongly enhances spin relaxation through scattering with phonons. Consequently, the relaxation time at room temperature reduces from microseconds in free-standing graphene to nanoseconds in graphene on the hexagonal boron nitride (hBN) substrate, which is the order of magnitude typically measured in experiments. Further, inversion symmetry breaking by hBN introduces a stronger asymmetry in electron and hole spin lifetimes than predicted by the conventional D'yakonov-Perel' (DP) model for spin relaxation. Deviations from the conventional DP model are stronger for in-plane spin relaxation, resulting in out-of-plane to in-plane lifetime ratios much greater than 1/2 with a maximum close to the Dirac point. These FPDM results, independent of symmetry-specific assumptions or material-dependent parameters, also validate recent modifications of the DP model to explain such deviations. Overall, our results indicate that spin-phonon relaxation in the presence of substrates may be more important in graphene than typically assumed, requiring consideration for graphene-based spin technologies at room temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Electric field tunable layer polarization in graphene/boron-nitride twisted quadrilayer superlattices

The recently observed unconventional ferroelectricity in AB bilayer graphene sandwiched by hexagonal boron nitride (hBN) presents a new platform to manipulate correlated phases in multilayered van der Waals heterostructures [Zheng et al., Nature 588, 71 (2020).]. Here, we present a low-energy continuum model for AB bilayer graphene encapsulated by the top and bottom layers of either hBN or graphene, with two independent twist angles. For the graphene/hBN heterostructures, we show that twist angle asymmetry leads to a layer polarization of the valence and conduction bands. We also show that an out-of-plane displacement field not only tunes the layer polarization but also flattens the low-energy bands. We extend the model to show that the electronic structures of quadrilayer graphene heterostructure consisting of AB bilayer graphene encapsulated by the top and bottom graphene layers can similarly be tuned by an external electric field.

Zhu, Ziyan↗
DOE OSTI2024

Landau-phonon polaritons in Dirac heterostructures

Polaritons are light-matter quasiparticles that govern the optical response of quantum materials at the nanoscale, enabling on-chip communication and local sensing. Here, we report Landau-phonon polaritons (LPPs) in magnetized charge-neutral graphene encapsulated in hexagonal boron nitride (hBN). These quasiparticles emerge from the interaction of Dirac magnetoexciton modes in graphene with the hyperbolic phonon polariton modes in hBN. Using infrared magneto-nanoscopy, we reveal the ability to completely halt the LPP propagation in real space at quantized magnetic fields, defying the conventional optical selection rules. The LPP-based nanoscopy also tells apart two fundamental many-body phenomena: the Fermi velocity renormalization and field-dependent magnetoexciton binding energies. Our results highlight the potential of magnetically tuned Dirac heterostructures for precise nanoscale control and sensing of light-matter interaction.

36 MATERIALS SCIENCE↗
NASA NTRS2017

Boron Nitride Nanoribbons from Exfoliation of Boron Nitride Nanotubes

Two types of boron nitride nanotubes (BNNTs) were exfoliated into boron nitride nanoribbons (BNNR), which were identified using transmission electron microscopy: (1) commercial BNNTs with thin tube walls and small diameters. Tube unzipping was indicated by a large decrease of the sample's surface area and volume for pores less than 2 nm in diameter. (2) BNNTs with large diameters and thick walls synthesized at NASA Glenn Research Center. Here, tube unraveling was indicated by a large increase in external surface area and pore volume. For both, the exfoliation process was similar to the previous reported method to exfoliate commercial hexagonal boron nitride (hBN): Mixtures of BNNT, FeCl3, and NaF (or KF) were sequentially treated in 250 to 350 C nitrogen for intercalation, 500 to 750 C air for exfoliation, and finally HCl for purification. Property changes of the nanosized boron nitride throughout this process were also similar to the previously observed changes of commercial hBN during the exfoliation process: Both crystal structure (x-ray diffraction data) and chemical properties (Fourier-transform infrared spectroscopy data) of the original reactant changed after intercalation and exfoliation, but most (not all) of these changes revert back to those of the reactant once the final, purified products are obtained.

boron nitride nanotube↗
NASA NTRSDate not supplied

Intercalation and Exfoliation of Hexagonal Boron Nitride

Innovators at NASA's Glenn Research Center have made several breakthroughs in treating hexagonal boron nitride (hBN) nanomaterials, improving their properties to supplant carbon nanotubes in many applications. These advances have hBN nanomaterials set to transform applications such as heat sinks, electrical insulators, lightweight piezoelectric polymers for satellites and unmanned aerial vehicles, ceramic composites for jet engines, biomedical components, and radiation shielding technology.

Hexagonal Boron Nitride↗
NASA NTRSDate not supplied

Balancing Manufacturability with Performance: Achieving Extrudable, High Thermal Conductivity, and Dielectrically Robust Thermoplastic Composites

Improved thermal management solutions for electrical insulation systems are a priority for increasing efficiency. Although polymeric electrical insulation is ubiquitous, it generally exhibits low thermal conductivities (κ ; 0.1 – 0.3 W/mK). High κ electrical insulation systems are desirable for several reasons including improved heat wicking. Polymer-ceramic composites offer a viable path towards increasing κ of electrical insulation systems. However, processing-induced anisotropic particle orientation can result in prohibitively high concentrations of high κ particles being required to achieve impactful improvements. This work evaluates the effectiveness of a double percolation approach and its impacts on extruded polymer composite insulation κ using polyimide (PI), polyphenylsulfone (PPSU), and hexagonal boron nitride (hBN). Thermoplastic composite blends of PI/PPSU exhibited a 15% improvement in composite κ at comparable loading levels of hBN relative to mono-polymer material systems. On the other hand, PI/PPSU/hBN composites exhibited lower dielectric strengths than either neat polymer/hBN composite. A trade-off between maximizing material κ and resultant processing and dielectric performances may exist when using a double percolation approach for thermoplastic composites.

Witold K. Fuchs↗
DOE OSTI2024

Phase-inversion polymer composite material, fabricating methods and applications of same

A composite film usable as a separator of an electrochemical device includes hBN nanosheets and at least one polymer. The hBN nanosheets are uniformly dispersed within a matrix of said least one polymer to achieve a highly porous microstructure. Said at least one polymer comprises one or more electrically insulating and electrochemically inert polymers.

Hersam, Mark C.↗
DOE OSTI2024

Role of Heterointerface in Lithium-Induced Phase Transition in T d -WTe 2 Nanoflakes

A new polytype of WTe 2 with a bandgap has been recently discovered through the intercalation of lithium into the van der Waals gaps of T d -WTe 2 . Here, we report the effects of reduced thicknesses and heterointerfaces on the intercalation-induced phase transition in WTe 2 . Using in situ Raman spectroscopy during the electrochemical lithiation of WTe 2 flakes as a function of flake thickness, we observe that additional electrochemical energy is required for the phase transition of WTe 2 from the T d phase to the new lithiated T d ' phase, going from 0.8 V of the applied electrochemical voltage for a thick flake to 0.5 V and 0.3 V for 7- and 5-layered samples, respectively. We ascribe this suppression of the phase transition to the interfacial interaction between the nanoflake and SiO 2 /Si substrate, which plays an increasing role as the sample thickness is reduced. The suppressed kinetics of the phase transition can be mitigated by placing the WTe 2 flake on a hexagonal boron nitride (hBN) flake, which facilitates the release of the in-plane strain induced by the phase transition. Importantly, our study underscores the significance of interfacial effects in modulating phase transitions in two-dimensional (2D) materials, suggesting heterogeneous transition pathways, as well as interfacial engineering to control these phase transitions.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Measuring the Exciton Binding Energy: Learning from a Decade of Measurements on Halide Perovskites and Transition Metal Dichalcogenides

The exciton binding energy ( E b ) is a key parameter that governs the physics of many optoelectronic devices. At their best, trustworthy and precise measurements of E b challenge theoreticians to refine models, are a driving force in advancing the understanding of a material system, and lead to efficient device design. At their worst, inaccurate E b measurements lead theoreticians astray, sow confusion within the research community, and hinder device improvements by leading to poor designs. Here, this review article seeks to highlight the pros and cons of different measurement techniques used to determine E b , namely, temperature‐dependent photoluminescence, resolving Rydberg states, electroabsorption, magnetoabsorption, scanning tunneling spectroscopy, and fitting the optical absorption. Due to numerous conflicting E b values reported for halide perovskites (HP) and transition metal dichalcogenides (TMDC) monolayers, an emphasis is placed on highlighting these measurements in an attempt to reconcile the variance between different measurement techniques. It is argued that the experiments with the clearest indicators are in agreement on the following values: ≈350–450 meV for TMDC monolayers between SiO 2 and vacuum, ≈150–200 meV for hBN‐encapsulated TMDC monolayers, ≈200–300 meV for common lead‐iodide 2D HPs, and ≈10 meV for methylammonium lead iodide.

36 MATERIALS SCIENCE↗