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Results for “heterojunctions”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Vertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D β-Ga 2 O 3

Wide bandgap semiconductors such as gallium oxide (Ga 2 O 3 ) have attracted much attention for their use in next-generation high-power electronics. Although single-crystal Ga 2 O 3 substrates can be routinely grown from melt along various orientations, the influence of such orientations has been seldom reported. Further, making rectifying p–n diodes from Ga 2 O 3 has been difficult due to lack of p-type doping. In this study, we fabricated and optimized 2D/3D vertical diodes on β-Ga 2 O 3 by varying the following three factors: substrate planar orientation, choice of 2D material and metal contacts. Furthermore, the quality of our devices was validated using high-temperature dependent measurements, atomic-force microscopy (AFM) techniques and technology computer-aided design (TCAD) simulations. Our findings suggest that 2D/3D β-Ga 2 O 3 vertical heterojunctions are optimized by substrate planar orientation (–201), combined with 2D WS 2 exfoliated layers and Ti contacts, and show record rectification ratios (>10 6 ) concurrently with ON-Current density (>10 3 A cm –2 ) for application in power rectifiers.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Effect of ZnO and PEDOT:PSS charge selective layers on photovoltage of cuprous oxide (Cu 2 O) heterojunction solar cells

Electrochemical deposition (ECD) of Cu 2 O provides a scalable and low temperature pathway to solar cells with a theoretical high energy conversion efficiency of 23%, based on the 2.0–2.2 eV band gap of Cu 2 O. However, existing ECD-Cu 2 O devices are plagued by poor crystallinity and low selectivity of the electron and hole transport layers. Here we use Vibrating Kelvin Probe Surface Photovoltage Spectroscopy (VKP-SPV) to probe the charge transfer selectivity in FTO/ZnO/Cu 2 O/PEDOT:PSS/Ni heterojunction solar cells. Selective electron extraction is achieved at the ZnO back contact to Cu 2 O, as confirmed by a negative surface photovoltage signal. While the uncoated Cu 2 O surface is electron-selective due to the formation of a hole depletion layer, spin coating of a PEDOT:PSS film turns it into a hole-selective interface. After adding nickel metal ink top electrodes, functional 1.0 cm 2 solar cells with power conversion efficiency (PCE) of up to 0.07%, 195 mV open-circuit voltage, and 1.28 mA cm –2 short-circuit photocurrent are achieved. The photovoltaic performance is higher for aluminum doped zinc oxide (AZO) substrates than for fluorine doped tin oxide (FTO) due to the presence of a n-/p-junction that further increases the electron selectivity of the AZO/ZnO/Cu 2 O contacts. Overall, this work demonstrates the first application of PEDOT:PSS as a hole transport layer (HTL) for Cu 2 O and the use of VKP-SPV to measure the photovoltage contributions of the Cu 2 O interfaces. Furthermore, the ability to fabricate Cu 2 O solar cells at near room temperature without the use of vacuum methods or rare elements is an important step towards a scalable Cu 2 O PV technology.

14 SOLAR ENERGY↗
DOE OSTI2021

Optimization of four terminal rear heterojunction GaAs on Si interdigitated back contact tandem solar cells

High-efficiency, four-terminal tandem solar cells composed of thin GaAs films mechanically stacked onto interdigitated back contact silicon solar cells with a glass interlayer are demonstrated. The optimal thickness of the absorber layer of a rear heterojunction GaAs subcell for use in four terminal tandem solar cells was studied. GaAs top cells with absorber layer thicknesses of 1.5, 1.9, 2.3, 2.8, and 3.5 µm were fabricated on glass and mechanically stacked onto interdigitated back-contact Si bottom cells. All tandem cells were found to have efficiencies above 30% under the AM1.5 G spectrum demonstrating a relatively weak sensitivity to thickness in the four-terminal configuration. We found the 2.8 µm absorber layer cell to have the highest top cell and tandem cell efficiency at 26.38% and 32.57%, respectively. Optical modeling with transfer matrix method for the planar top cell and Lambertian light trapping in the textured Si subcell, along with drift-diffusion Hovel equations, were used to show photon recycling enhancement to the effective diffusion length and VOC of the top cell as a result of the low-index glass interlayer.

14 SOLAR ENERGY↗
DOE OSTI2021

Range-separated hybrid functionals for mixed dimensional heterojunctions: Application to phthalocyanines/MoS 2

We analyze the electronic structure and level alignment of transition-metal phthalocyanine (MPc) molecules adsorbed on two-dimensional MoS 2 employing density functional theory (DFT) calculations. We develop a procedure for multi-objective optimal tuning of parameters of range-separated hybrid functionals in these mixed-dimensional systems. Using this procedure, which leads to the asymptotically-correct exchange-correlation potential between molecule and two-dimensional material, we obtain electronic structures consistent with experimental photoemission results for both energy level alignment and electronic bandgaps, representing a significant advance compared to standard DFT methods. We elucidate the MoS 2 valence resonance with the transition-metal phthalocyanine non-frontier 3d orbitals and its dependence on the transition metal atomic number. Based on our calculations, we derive parameter-free, model self-energy corrections that quantitatively accounts for the effects of the heterogeneous dielectric environment on the electronic structure of these mixed-dimensional heterojunctions.

2D materials↗
DOE OSTI2022

Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions

AlScN is attractive as a lattice-matched epitaxial barrier layer for incorporation in GaN high electron mobility transistors due to its large dielectric constant and polarization. The transport properties of polarization-induced two-dimensional (2D) electron gas of densities of ∼2×10 13 /cm 2 formed at the AlScN–GaN interface is studied by Hall-effect measurements down to cryogenic temperatures. The 2D electron gas densities exhibit mobilities limited to ∼300 cm 2 /V s down to 10 K at AlScN/GaN heterojunctions. The insertion of a ∼2 nm AlN interlayer boosts the room temperature mobility by more than five times from ∼300 cm 2 /V s to ∼1573 cm 2 /V s, and the 10 K mobility by more than 20 times to ∼6980 cm 2 /V s at 10 K. These measurements provide guidelines to the limits of electron conductivities of these highly polar heterostructures.

42 ENGINEERING↗
DOE OSTI2021

Realization of semiconducting layered multiferroic heterojunctions via asymmetrical magnetoelectric coupling

Two-dimensional (2D) semiconducting multiferroics that can effectively couple magnetic and polarization (P) orders have great interest for both fundamental research and technological applications in nanoscale, which are, however, rare in nature. In this work, we propose a general mechanism to realize semiconducting 2D multiferroics via van der Waals (vdW) heterojunction engineering, as demonstrated in a typical heterostructure consisting of magnetic bilayer CrI 3 (bi-CrI 3 ) and ferroelectric monolayer In 2 Se 3 . Interestingly, the novel indirect orbital coupling between Se 4p and Cr 3d orbitals, intermediated by the interfacial I 5p orbitals, is switchable in the opposite P configurations, resulting in an unexpected mechanism of strong asymmetrical magnetoelectric coupling. Therefore, along with the noticeable ferroelectric energy barrier induced by In 2 Se 3 , the realization of opposite magnetic orders in opposite P configurations can eventually result in the novel multiferroicity in bi– CrI 3 /In 2 Se 3 . Finally, we demonstrate that our mechanism can generally be applied to design other vdW multiferroics even with tunable layer thickness.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Highly Tunable Valley Polarization of Potential-Trapped Moiré Excitons in WSe 2 /WS 2 Heterojunctions

Moiré superlattices created by stacking atomic layers of transition metal dichalcogenide semiconductors have emerged as a class of fascinating artificial photonic and electronic materials. An appealing attribute of these structures is the inheritance of the valley degree of freedom from the constituent monolayers. Recent studies show evidence that the valley polarization of the moiré excitons is highly tunable. In heterojunctions of WSe 2 /WS 2 , marked improvement in valley polarization is observed by increasing optical excitation power, a behavior that is quite distinct from the monolayers, and lacks a clear understanding so far. Here, in this Letter, we show that this highly tunable valley property arises from filling of the moiré superlattice, which provides an intriguing mechanism for engineering these quantum opto-valleytronic platforms. Our data further demonstrate that the long-range electron-hole exchange interaction, despite being significantly weakened in the junctions, is the dominant source of moiré exciton intervalley scattering at low population. Using magnetic field tuning, we quantitatively determine the exchange interaction strength to be 0.03 and 0.24 meV for 0° and 60° twisted samples, respectively, in our experiments, about 1 order of magnitude weaker than that in the monolayers.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2024

Probing the electronic properties of gap states near the surface of n -SrTiO 3-δ / i -Si (001) heterojunctions with high sensitivity

We have measured soft x-ray resonant photoemission for the n–SrTiO 3–δ /i–Si⁡(001) (δ=~0.0003) hybrid semiconductor heterojunction with the goal of probing occupied electronic states in the band gap near the surface. By utilizing both swept energy, angle-integrated and fixed-energy, and angle-resolved spectroscopies, we identify the atomic and orbital character of the in-gap state as well as the different electronic phases that contribute to it. Specifically, we isolate the state associated with trapped charge on the n–SrTiO 3–δ surface that causes surface depletion from the localized gap state resulting from electron correlation effects in the complex oxide. Using an x-ray energy close to select dipole allowed TiL 3 → 3⁢d x-ray absorption resonances results in a 40-fold increase in sensitivity. Furthermore, this feature makes photoemission possible when probing electrons from dopants at concentrations as low as a few hundredths of a percent.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Damp Heat Induced Degradation of Silicon Heterojunction Solar Cells With Cu-Plated Contacts

Damp heat exposure is one of the most stringent environments for testing the durability of solar cells in packaged modules. Damp heat stresses and induces a variety of degradation modes in solar cells and modules: for example, moisture-induced corrosion of electrodes and interconnections, deterioration of polymeric materials, and/or thermally activated diffusion processes. To screen for these and other potential degradation modes, we subject one-cell modules containing silicon heterojunction (SHJ) solar cells with Cu-plated contacts to extended damp heat tests at 85 °C/85% relative humidity. SHJ cells were laminated with two common encapsulants: ethylene vinyl acetate (EVA) and polyolefin elastomer (POE), and two constructions: glass-backsheet and glass-glass. We observe degradation in all components of solar cell maximum power (PMP): current, voltage, and fill factor, and find evidence of increased carrier recombination and nonideal diode behavior with increasing stress. For glass-backsheet constructions, EVA samples generally degrade more than POE by a factor of approximately 1.5x PMP, and the different encapsulants produce different degradation patterns. Similar trends are observed in glass-glass modules, but to a lesser degree. In a different experiment, we observe a decrease in effective minority carrier lifetime of nonmetallized SHJ precursors measured after damp heat. This implies that some degradation unrelated to the contacts is to be expected and confirms the observation of increasing recombination.

14 SOLAR ENERGY↗
DOE OSTI2020

Electroluminescence Characterization of Recombination in Back Junction Silicon Heterojunction Test Structures: Role of the Inversion Layer

Electroluminescence (EL) characterization technique is used to quantify recombination properties in back junction silicon (Si) heterojunction (HJ) solar cell test structures with interdigitated back contact (IBC) emitters and metal contacts. These test structures are three terminal devices that allow the selective biasing and injection of minority carriers into spatially isolated emitter strips having different widths. This allows the study of minority carriers' current transport, flow, and recombination in these regions, which can, then, be applied to full IBC cells. EL is used to verify that emission is proportional to the minority carriers' concentration in the corresponding regions of the device, thus providing information relevant to minority carriers' collection when compared with laser beam induced current technique in considerably less time and with a higher spatial resolution. Current transport through the inversion layer that occurs due to the band bending at the n crystalline Si and p amorphous Si interface is discussed relying on the distance that minority carriers travel in different configurations and on their diffusion length. Laser defect spots (LDS) were, then, introduced in the emitter regions to analyze the spatial profile of minority carriers as they recombine at the LDS due to their high surface recombination velocity. Ideality factors in different configurations are spatially mapped from EL before and after introducing LDS and are used to show the effect of the inversion layer on the different recombination mechanisms. Current transport through the inversion layer is studied at different biasing conditions and correlated with current transport after LDS.

42 ENGINEERING↗
DOE OSTI2020

Experimental Demonstration of Charge-Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching

This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the p-type doping was achieved by adjusting the thickness of the pGaN. Furthermore, this device structure enabled scaling of breakdown voltage to over 3 kV, and dynamic switching up to 2.8 kV without using any field-plate.

42 ENGINEERING↗
DOE OSTI2021

Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

Here we present the experimental results of an inverted three-terminal heterojunction bipolar transistor solar cell (HBTSC) made of GaInP/GaAs. The inverted growth and processing enables contacting the intermediate layer from the bottom, which increases the cell performance by reducing shadow factor and series resistance at the same time. With this prototype we show that an inverted processing of a three-terminal solar cell is feasible and pave the way for the application of epitaxial lift-off, substrate reuse and mechanical stacking to the HBTSC which can eventually lead to a low-cost high-efficiency III-V-on-Si HBTSC technology.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2021

Determining valence band offsets in heterojunctions using a single core-level x-ray photoelectron spectrum

The behavior and functionality of semiconductor heterojunctions depend critically on the alignments of the valence and conduction bands at the various interfaces. Traditionally band alignment has been measured by x-ray photoelectron spectroscopy using pairs of distinct core levels, one from each side of the interface, to track the valence band maxima in the two materials. Here, we demonstrate that it is possible to determine band alignment using a single core-level photoelectron spectrum for an element that is common to both materials. The energy splitting between the photoemission features originating in the two materials is shown to be dominated by the difference in electrostatic potential across the interface, leading to a reliable determination of the band alignment.

Wang, Le↗
DOE OSTI2022

Exploring Si Heterojunction Solar Cell Degradation: Bulk and Interface Processes Analyzed by Simulations and Experiments in Order to Develop Mitigation Strategies

The Si technology with the highest conversion efficiency is a-Si/c-Si heterojunction (HJ) PV. Its market penetration, however, is slowed by reports that fielded HJ modules degraded at twice the rate of regular c-Si modules. Our very recent work confirmed this degradation and attributed it to enhanced recombination at the a-Si/c-Si interface, caused by the slow, order-of-magnitude increase of the defect density. We propose to comprehensively explore degradation mechanisms in Si HJ cells by combining simulations and experiments. Theoretically, we will: (1) simulate structure of a-Si and a-Si/c-Si interfaces, identify defects; (2) determine statistics of energy barriers that control defect formation; (3) compute growth of defect density from the barrier distribution, and the resulting degradation of Voc. Experimentally, we will: (1) create a series of HJ-cell-representative stacks with varying layer thicknesses and deposition conditions by using PECVD tools; (2) use temperature and injection-dependent lifetime spectroscopy to determine effective lifetimes; (3) deconvolve the data to separate bulk and interface effects, and the effects of charge density and interface defects to analyze long time degradation. The goal is to identify material and device degradation mechanisms, to develop mitigation strategies for improved stability, such as the introduction of capping layers and hydrogen diffusion control.

14 SOLAR ENERGY↗
DOE OSTI2020

Heterojunctions in halide perovskite nanostructures

This disclosure provides systems, methods, and apparatus related to heterojunctions in halide perovskite nanostructures. In one aspect, a nanostructure comprises a first region and a second region. The first region comprises ABX3, with A being selected from a group consisting of Cs and Rb, with B being selected from a group consisting of Sn and Pb, and with X being selected from a group consisting of Br, Cl, and Br and Cl. The second region comprises ABY3, with Y being selected from a group consisting of Br, I, and Br and I. Compositions of the first region of the nanostructure and the second region of the nanostructure are different.

Dou, Letian↗
DOE OSTI2021

Hybrid planar-mixed heterojunction for organic photovoltaics

Disclosed herein are organic photosensitive optoelectronic devices comprising two electrodes in superposed relation; a mixed photoactive layer located between the two electrodes, wherein the mixed photoactive layer comprises at least one donor material having a HOMO energy and at least one acceptor material having a LUMO energy, wherein the at least one donor material and the at least one acceptor material form a mixed donor-acceptor heterojunction; a photoactive layer adjacent to and interfacing with the mixed photoactive layer, wherein the photoactive layer comprises a material having a LUMO energy within 0.3 eV of the LUMO energy of the at least one acceptor material or a HOMO energy within 0.3 eV of the HOMO energy of the at least one donor material; and a buffer layer adjacent to and interfacing with the mixed photoactive layer.

Forrest, Stephen R.↗
DOE OSTI2022

Molecular Doping Increases the Semitransparent Photovoltaic Performance of Dilute Bulk Heterojunction Film with Discontinuous Polymer Donor Networks

The semitransparent and colorful properties of organic solar cells (OSCs) attract intensive academic interests due to their potential application in building integrated photovoltaics, wearable electronics, and so forth. The most straightforward and effective method to tune these optical properties is varying the componential ratio in the blend film. However, the increase in device transmittance inevitably sacrifices the photovoltaic performance because of severe carrier recombination that originates from discontinuous charge-transport networks in the blend film. In this work, a strategy is proposed via the molecular-doping strategy to overcome these shortcomings. It is discovered that p-doping is able to release the trapped holes in segregated polymer domains leading to short-circuit current enhancement, while n-doping is more effective to fill the bandgap states producing a higher fill factor. More importantly, either type of doping improves the photovoltaic performance in the semitransparent photovoltaic devices. These discoveries provide a new pathway to breaking the compromise between the photovoltaic performance and optical transmittance in semitransparent OSCs, and hold promise for their future commercialization.

14 SOLAR ENERGY↗