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Ion implantation is utilized for the dopant introduction processes necessary to fabricate a silicon solar cell. Implantation provides a versatile powerful tool for development of high efficiency cells. Advantages and problems of implantation and the present status of developmental use of the technique for solar cells are discussed.
We show 6-junction inverted metamorphic solar cells with high efficiencies under both the global and direct spectrum, and discuss improvements to device components. High voltage AlGaInP subcells are demonstrated on GaAs substrates miscut 2° towards (111)B by using Sb surfactant to reduce atomic ordering. This miscut enables high voltage and low dislocation density GaInAs subcells by using atomically-ordered GaInP-based graded buffers. One-sun efficiencies of 39.2 ± 1.3% under the global spectrum and 39.4 ± 1.1% direct spectrum have been demonstrated by using these high voltage subcell components. For high efficiency under the concentrated direct spectrum, low resistance is also necessary, which requires a challenging and nonintuitive optimization of tunnel junctions and heterobarriers. Increasing the thickness of a (Al)GaInAs spacer layer between the back surface fields (BSF) and tunnel junctions (TJ) of latticemismatched subcells reduces nonlinear resistance, which implies a detrimental interaction between the BSF and TJ. Concentrator devices with optimized spacer layers show reduced effective resistance and maintain fill factor > 75% at 1100 suns. Device efficiencies under the concentrated direct spectrum peak at 47.1 ± 3.2% at 143 suns.
A design for silicon solar cells was investigated as an approach to increasing the cell open-circuit voltage and efficiency for flat-plate terrestrial photovoltaic applications. This deviates from past designs, where either the entire front surface of the cell is covered by a planar junction or the surface is textured before junction formation, which results in an even greater (up to 70%) junction area. The heavily doped front region and the junction space charge region are potential areas of high recombination for generated and injected minority carriers. The design presented reduces junction area by spreading equidiameter dot junctions across the surface of the cell, spaced about a diffusion length or less from each other. Various dot diameters and spacings allowed variations in total junction area. A simplified analysis was done to obtain a first-order design optimization. Efficiencies of up to 19% can be obtained. Cell fabrication involved extra masking steps for selective junction diffusion, and made surface passivation a key element in obtaining good collection. It also involved photolithography, with line widths down to microns. A method is demonstrated for achieving potentially high open-circuit voltages and solar-cell efficiencies.
Experimental and theoretical work on low resistivity, high efficiency solar cells indicates the dominant role that defects take in determining performance. High doping mechanisms produce gap shrinkage by band tailing, impurity band widening and impurity misfit; altered interband transmission rates result from Auger impact, SRH processes, or from electronic tunneling via defects. Characterizations of cell materials for their defects and their relations to the chosen fabrication processes are proposed.
Evidence is that tunneling via states in the forbidden gap is the dominant source of excess current in the dark current-voltage (I-V) characteristics of high-efficiency DMCVD grown Al(x)Ga(1-x)As/GaAs(x is equal to or greater than 0.85) solar cells. The dark forward and reverse I-V measurements were made on several solar cells, for the first time, at temperatures between 193 and 301 K. Low-voltage reverse-bias I-V data of a number of cells give a thermal activation energy for excess current of 0.026 + or - 0.005 eV, which corresponds to the carbon impurity in GaAs. However, other energy levels between 0.02 eV and 0.04 eV were observed in some cells which may correspond to impurity levels introduced by Cu, Si, Ge, or Cd. The forward-bias excess current is mainly due to carrier tunneling between localized levels created in the space-charge layer by impurities such as carbon, which are incorporated during the solar cell growth process. A model is suggested to explain the results.
A concept for generating high-efficiency, low-cost, solar-cell power is outlined with reference to solar cell parameters, optical concentrators, and thermal control procedures. A design for a 12.5-kw power module for space operation is discussed noting the optical system, spectrum splitter, light conversion system, cell cooling, power conditioner, and tracking mechanism. It is found that for an unconcentrated array, efficiency approaches 60% when ten or more bandgaps are used. For a 12-band system, a computer program distributed bandgaps for maximum efficiency and equal cell currents. Rigid materials and thin films have been proposed for optical components and prisms, gratings, and dichroic mirrors have been recommended for spectrum splitting. Various radiator concepts are noted including that of Weatherston and Smith (1960) and Hedgepeth and Knapp (1978). The concept may be suitable for the Solar Power Satellite.
A solar cell structure is proposed which uses a GaAs nipi doping superlattice. An important feature of this structure is that photogenerated minority carriers are very quickly collected in a time shorter than bulk lifetime in the fairly heavily doped n and p layers and these carriers are then transported parallel to the superlattice layers to selective ohmic contacts. Assuming that these already-separated carriers have very long recombination lifetimes, due to their being across an indirect bandgap in real space, it is argued that the proposed structure may exhibit superior radiation tolerance along with reasonably high beginning-of-life efficiency.
The design of a high efficiency, long life terrestrial module was completed. It utilized 256 rectangular, high efficiency solar cells to achieve high packing density and electrical output. Tooling for the fabrication of solar cells was in house and evaluation of the cell performance was begun. Based on the power output analysis, the goal of a 13% efficiency module was achievable.
A significant advancement in the development of thin high efficiency wraparound contact silicon solar cells has been made by coupling space and terrestrial processing procedures. Although this new method for fabricating cells has not been completely reduced to practice, some of the initial cells have delivered over 20 mW/sq cm when tested at 25 C under AMO intensity. This approach not only yields high efficiency devices, but shows promise of allowing complete freedom of choice in both the location and size of the wraparound contact pad area
A significant advancement in the development of thin high efficiency wraparound contact silicon solar cells has been made by coupling space and terrestrial processing procedures. Although this new method for fabricating cells has not been completely reduced to practice, some of the initial cells have delivered over 20 mW/sq cm when tested at 25 C under AMO intensity. This approach not only yields high efficiency devices, but shows promise of allowing complete freedom of choice in both the location and size of the wraparound contact pad area.
Ion implantation is being developed for high volume automated production of silicon solar cells. An implanter designed for solar cell processing and able to properly implant up to 300 4-inch wafers per hour is now operational. A machine to implant 180 sq m/hr of solar cell material has been designed. Implanted silicon solar cells with efficiencies exceeding 16% AM1 are now being produced and higher efficiencies are expected. Ion implantation and transient processing by pulsed electron beams are being integrated with electrostatic bonding to accomplish a simple method for large scale, low cost production of high efficiency solar cell arrays.
Large scale manufacture of phosphide based semiconductor devices by organo-metallic vapor phase epitaxy (OMVPE) typically requires the use of highly toxic phosphine. Advancements in phosphine substitutes have identified tertiarybutylphosphine (TBP) as an excellent precursor for OMVPE of InP. High quality undoped and doped InP films were grown using TBP and trimethylindium. Impurity doped InP films were achieved utilizing diethylzinc and silane for p and n type respectively. 16 percent efficient solar cells under air mass zero, one sun intensity were demonstrated with Voc of 871 mV and fill factor of 82.6 percent. It was shown that TBP could replace phosphine, without adversely affecting device quality, in OMVPE deposition of InP thus significantly reducing toxic gas exposure risk.
The use of a (silicon)/(heavily doped polysilicon)/(metal) structure to replace the conventional high-low junction (or back-surface-field, BSF) structure of silicon solar cells was examined. The results of an experimental study designed to explore both qualitatively and quantitatively the mechanism of the improved current gain in bipolar transistors with polysilicon emitter contact are presented. A reciprocity theorem is presented that relates the short circuit current of a device, induced by a carrier generation source, to the minority carrier Fermi level in the dark. A method for accurate measurement of minority-carrier diffusion coefficients in silicon is described.
An outline is given listing the speeches given in each session and the pertinent points is some speeches. There were six session, besides the overview session they were: (1) high efficiency concepts; (2) surface/interface effects; (3) bulk effects; (4) modeling; and (5) high efficiency device processing. Besides the emphasis placed on increasing efficiency of energy conversion, a great amount of discussion was spent on ways to reduce recombination and reducing surface defects.
The donor/acceptor interaction in non-fullerene organic photovoltaics leads to the mixing domain that dictates the morphology and electronic structure of the blended thin film. Initiative effort is paid to understand how these domain properties affect the device performances on high-efficiency PM6:Y6 blends. Different fullerenes acceptors are used to manipulate the feature of mixing domain. It is seen that a tight packing in the mixing region is critical, which could effectively enhance the hole transfer and lead to the enlarged and narrow electron density of state (DOS). As a result, short-circuit current (J SC ) and fill factor (FF) are improved. The distribution of DOS and energy levels strongly influences open-circuit voltage (V OC ). The raised filling state of electron Fermi level is seen to be key in determining device V OC . Energy disorder is found to be a key factor to energy loss, which is highly correlated with the intermolecular distance in the mixing region. A 17.53% efficiency is obtained for optimized ternary devices, which is the highest value for similar systems. The current results indicate that a delicate optimization of the mixing domain property is an effective route to improve the V OC , J SC , and FF simultaneously, which provides new guidelines for morphology control toward high-performance organic solar cells.
This project will develop a high efficiency solar cell using high-resistivity, high-lifetime multi-crystalline p-type kerfless Direct Wafer (DW) Product developed by CubicPV. NREL developed technology for passivating contacts will be utilized under this CRADA.
Perovskite solar cells (PSCs) fabricated in laboratories have already achieved power conversion efficiency (PCE) comparable to market-dominant crystalline silicon solar cells. However, this promising photovoltaic technology suffers from severe loss of PCE during scaling up, limiting its progress toward commercialization. One critical question is to develop scalable, low-cost, high throughput, and well-controlled production methods to deposit high-quality perovskite films. Among various approaches, two-step sequential deposition methods have their unique advantages but have been long overlooked. This review provides an overview of two-step methods for fabricating efficient and stable perovskite solar modules (PSMs). We first discuss the mechanisms of two-step perovskite conversion and advanced engineering approaches to modulate the perovskite formation process. We survey the progress of efficient PSCs prepared by different two-step methods and compare the advantages and disadvantages of each method for scalable production of PSMs. Particularly, we highlight that the vapor-based two-step methods are promising for high-throughput in-line production of PSMs. Finally, we provide insights into the challenges and outlook of the industrialization of two-step processes for producing PSMs.
Hybrid organic-inorganic metal halide perovskites have continually demonstrated competitive advantages for photovoltaic applications due to their high light absorption coefficient, tunable bandgaps, ambipolar charge mobility and high tolerance of defects. However, there are many challenges yet to overcome to bring this technology to the market. For instance, bridging the ‘scaling gap’ and transitioning PSCs from a lab scale to an industrial scale is a serious challenge. This project developed a high stability and inexpensive perovskite solar cell (PSC) by incorporating hydrophobic carbon nanosheets as counter electrodes (CEs). We demonstrated that the hydrogenated carbon nanosheets with tunable hydrophobic properties as CEs can improve life-time stability of PSCs in operating conditions (i.e. humid air) while achieving impressive power conversion efficiency (PCE).