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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Collective dynamics and defect generation for Wigner crystal ratchets

Here we consider a two-dimensional Wigner crystal coupled to a quasi-one-dimensional asymmetric potential under ac or dc driving. As a function of electron density, substrate strength, and ac amplitude, we find that the system exhibits ordered and disordered pinned and dynamical states. Ratchet effects can appear under an applied ac drive and can be associated with pronounced structural changes from a disordered state to a one-dimensional smecticlike state. We observe a pinned phase, a diodelike ratchet where motion only occurs along the easy direction of the substrate asymmetry, a plastic ratchet where motion occurs in both directions but there is only a net drift in the easy direction, and an elastic ratchet where the system forms a crystal without plastic deformation that can still undergo ratcheting. At high filling, we find that there can be a ratchet reversal in which the net drift is along the hard direction of the substrate asymmetry. For weak disorder, there is an Aubry transition to a floating phase where the ratchet effects are lost. We map out the different dynamical phases as a function of substrate strength, filling, ac amplitude, and ac frequency. The ratchet effect on strong substrates is enhanced by thermal fluctuations, but is destroyed when the fluctuations become too large. Based on our results, we suggest other ways to detect Wigner crystals as well as methods for creating different types of devices to control disordered charge flow.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Report on High Energy Arcing Fault Experiments: Experimental Results from Low-Voltage Switchgear Enclosures

This report documents an experimental program designed to investigate High Energy Arcing Fault (HEAF) phenomena for low-voltage metal enclosed switchgear containing aluminum conductors. This report covers full-scale laboratory experiments using representative nuclear power plant (NPP) three-phase electrical equipment. Electrical, thermal, and pressure data were recorded for each experiment and documented in this report. This report covers experiments performed on two low-voltage switchgear units with each unit consisting of two vertical sections. The data collected supports characterization of the low-voltage HEAF hazard and these results will be used to support potential improvements in fire probabilistic risk assessment (PRA) methods. The experiments were performed at KEMA Labs located in Chalfont, Pennsylvania. The experimental design, setup, and execution were completed by staff from the NRC, the National Institute of Standards and Technology (NIST), Sandia National Laboratories (SNL) and KEMA. In addition, representatives from the Electric Power Research Institute (EPRI) observed some of the experimental setup and execution. The HEAF experiments were performed between August 26 and Augsut 29, 2019 on nearidentical Westinghouse Type DS low-voltage metal-enclosed indoor switchgear. The threephase arcing fault was initiated on the aluminum main bus or in select cases on the copper bus stabs near the breaker. These experiments used either nominal 480 volts AC or 600 volts AC. Durations of the experiments ranged from approximately 0.4 s to 8.3 s with fault currents ranging from approximately 9.2 kA to 19.3 kA. Real-time electrical operating conditions, including voltage, current and frequency, were measured during the experiments. Heat fluxes and incident energies were measured with plate thermometers, radiometers, and slug calorimeters at various locations around the electrical enclosures. Environmental measurements of breakdown, conductivity and electromagnetics were also taken. The experiments were documented with normal and high-speed videography, infrared imaging and photography. The results, while limited, indicated the difficulty in maintaining and sustaining low-voltage arcs on aluminum components of sufficient duration and at a single point as observed operating experience.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2020

Modification of magnetic ground state in Tb 2 Ni 0.90 Si 2.94 by thermal annealing

In this work, we have investigated the thermal annealing effect on the physical properties of an AlB 2 -type ternary intermetallic compound, Tb 2 Ni 0.90 Si 2.94 , that undergoes spin freezing behaviour coexisting with spatially limited antiferromagnetic phase below 9.9 K in as-cast form. Thermal annealing effect is found to result in considerable changes in the magnetic ground state properties of the system. Though only one magnetic transition around 9.9 K is observed for as-cast compound, the annealed sample exhibits two distinct magnetic transitions; one around T N ~ 13.5 K and another around T f ~ 4 K. The magnetization measurements and zero field neutron diffraction study reveal that the high temperature transition is antiferromagnetic type, though of limited correlation length, while the low temperature transition corresponds to spin freezing behaviour. The ac susceptibility and heat capacity studies also confirm the existence of frustrated cluster glass state at lower temperature than the antiferromagnetic ordering temperature. Additionally, ac susceptibility data exhibits signature of an additional peak in the even lower temperature region (at 2.2 K for zero frequency) that tends to shift in opposite direction with frequency in contrast to that observed for conventional glassy transitions. The change in intrinsic local structural disorder of Ni and Si ions associated with annealing has been argued to be responsible for the different magnetic behaviour in as-cast and annealed samples.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Phase-Slip Lines and Anomalous Josephson Effects in Tungsten Nanoscale Cluster-Based Topological Insulator Nanobridges: Implications for Topologically Protected Qubits and Quantum Sensors

Superconducting topological systems formed by a strong 3D topological insulator (TI) in proximity to a conventional s-wave superconductor (SC) have been intensely studied, as they may host Majorana zero modes. However, there are limited experimental realizations of TI-SC systems in which robust superconducting pairing is induced on the surface states of the TI and a topological superconducting state is established. Here, we fabricate a TI-SC system by depositing, via a focused ion beam, tungsten (W) nanoscale clusters on the surface of TI Bi 0.91 Sb 0.09 . We find that the resulting heterostructure supports phase-slip lines (PSLs) that act as effective Josephson junctions (JJs). Here, we probe the response of the system to microwave radiation. We find that for some ac frequencies, and powers, the resulting Shapiro steps’ structure of the voltage–current characteristic exhibits a missing first step and an unexpectedly wide second Shapiro step. The theoretical analysis of the measurements shows that the unusual Shapiro response arises from the interplay between a static JJ and a dynamic one and allows us to identify the conditions under which the missing first step can be attributed to the topological nature of the JJs formed by the PSLs. Our results suggest an approach to induce superconductivity in a TI, a route to realizing highly transparent topological JJs, and show how the response of superconducting systems to microwave radiation can be used to infer the dynamics of PSLs. Highly transparent topological junctions are promising candidates to realize vector field sensors with very high sensitivity. In addition, due to the nontrivial Berry phase of the TI’s surface states such junctions can be in a topological state which is ideal to create topologically protected qubits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Soft Switching Over the Entire Line Cycle for a Quadruple Active Bridge DCX in a DC to Three-Phase AC Module

This paper is focused on a transformer-isolated quadruple active bridge (QAB) dc-dc converter loaded by three full-bridge dc-ac inverters. The QAB functions as a "DC trans-former" (DCX) in the dc-to-three-phase ac module. The QAB outputs provide time-varying power at twice the line frequency, which presents challenges in maintaining zero voltage switching (ZVS) on the secondary sides during low-power portions of the line cycle. It is shown how ZVS can be achieved in a phase, even at zero-power transfer, using a relatively small circulating current provided by the magnetizing inductance of the high-frequency transformer. The approach is particularly effective in high-voltage applications using SiC MOSFETs, where reductions in switching loss outweigh additional conduction losses due to the circulating currents. A detailed analysis of ZVS switching waveforms at the zero power transfer is presented, including effects of nonlinear device capacitances. Analytical expressions are given for the optimal values of the magnetizing inductance and dead times of the QAB primary and secondary bridges. The approach is verified by experimental results on a 600 V, 4 kW prototype, demonstrating greater than 98.5% efficiency from 1 kW to 4 kW, with a peak efficiency of 99.0%. Compared to conventionally operated prototype, a 54% reduction in total loss is achieved at rated power.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2022

A Universal Converter for DC, Single-phase AC, and Multi-phase AC Systems (Final Report)

The goal of this project was to develop a new class of universal power converters that utilize the unique properties of WBG switches, including high reverse voltage blocking and fast switching, to achieve superior performance in universal converters. Some of the features of the proposed converter are as follows: 1) Significantly longer lifetime, higher power density, lower costs associated with bill of materials, and lower shipping, installation, and repair costs compared to the existing WBG-based solutions, 2) Very flexible operation for transferring power between any type of source (dc, single-phase ac, or multi-phase ac) and any type of load (dc, single-phase ac, or multi-phase ac) without using large passive components or additional stages/components, even when the instantaneous values of input and output power are not the same, and 3) High performance operation at all power levels. Considering its advantages and wide range of applications, the proposed converter has the potential to create a new paradigm in power electronics. Among numerous applications of this converter are electric vehicles, wind energy systems, PV systems, industrial motor drives, residential variable frequency drive systems, and nanogrid applications. This project focused on the application of this converter for residential PV, residential motor drive, and industrial motor drive applications, and evaluated the performance of this converter for these applications.

42 ENGINEERING↗
DOE OSTI2021

NUMERICAL CALCULATION OF LOSSES OF TRAPPED VORTICES UNDER STRONG RF MEISSNER CURRENT AND DC SUPERHEATING FIELD IN TYPE II SUPERCONDUCTORS

Research on the vortex dynamics and enhancing of superheating field in superconductors has attracted much attention in accelerator physics community to develop next-generation high-performance accelerator cavities. However, the extreme dynamics of curvilinear elastic vortices driven by very strong currents close to the depairing limit or superheating field of a superconductor with a nanostructured surface has not been well understood. We calculated the superheating field Hsh and critical momentum kc characterizing the wavelength of the instability ?m of the Meissner state to flux penetration by solving numerically the Ginzburg?Landau equations. A bulk superconductor, superconductor with the inhomogeneous surface disorder (S-S), and multilayered surface (S-I-S) have been thoroughly investigated in this work. Our result showed that S-S and S-I-S structures can enhance the superheating field well above their clean limit. In this work extensive numerical simulation of the power dissipated by an oscillating vortex segment driven by the surface ac Meissner currents was performed. Our simulations take into account the nonlinear vortex line tension, vortex mass, Bardeen?Stephen viscous vortex drag applicable at low fields, and nonlinear Larkin-Ovchinnikov (LO) viscous drag coefficient ?(v) at high fields and pinning force. We showed that the LO decrease of ?(v) with the vortex velocity v could radically change the field dependence of the surface resistance Ri(H) caused by trapped vortices. At low frequencies Ri(H) exhibits a conventional increase with H. However, as frequency increases, the surface resistance becomes a nonmonotonic function of H which decreases with H at higher fields irrespective of the pinning distribution. Overheating can mask the descending field dependence of Ri(H) as frequency increases. Our numerical simulations also show that the LO effect can cause a vortex bending instability at high field amplitudes and frequencies, giving rise to the formation of dynamic kinks along with the vortex when a vortex is pinned strongly to one end. Nonlinear losses of trapped vortices in thick films under high-amplitude RF fields as functions of frequency, mean free path and pinning characteristics have been calculated.

Pathirana, Walive↗
DOE OSTI2020

Unexpected Giant Microwave Conductivity in a Nominally Silent BiFeO 3 Domain Wall

Nanoelectronic devices based on ferroelectric domain walls (DWs), such as memories, transistors, and rectifiers, have been shown in recent years. Practical high-speed electronics, on the other hand, usually demand operation frequencies in the gigahertz (GHz) regime, where the effect of dipolar oscillation is important. Herein, an unexpected giant GHz conductivity on the order of 10 3 S m -1 is observed in certain BiFeO 3 DWs, which is about 100 000 times greater than the carrier-induced direct current (dc) conductivity of the same walls. Surprisingly, the nominal configuration of the DWs precludes the alternating current (ac) conduction under an excitation electric field perpendicular to the surface. Theoretical analysis reflects that the inclined DWs are stressed asymmetrically near the film surface, whereas the vertical walls in a control sample are not. The resultant imbalanced polarization profile can then couple to the out-of-plane microwave fields and induce power dissipation, which is confirmed by the phase-field modeling. Since the contributions from mobile-carrier conduction and bound-charge oscillation to the ac conductivity are equivalent in a microwave circuit, the research on local structural dynamics may open a new avenue to implement DW nano-devices for radio-frequency applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Advanced spectroscopic studies of (PPh 4 ) 2 [Co(N 3 ) 4 ], a field-induced single-ion magnet

The high-spin Co II complex (PPh 4 ) 2 [Co(N 3 ) 4 ] (Co-N 3 )has been investigated using advanced spectroscopic techniques [far-IR magneto-spectroscopy (FIRMS), high-frequency and high-field EPR (HFEPR), and inelastic neutron scattering (INS)] to study its zero-field-splitting (ZFS), giving spin-Hamiltonian (SH) parameters. The analysis of multi-frequency HFEPR reveals the easy-axis anisotropy with a D value of −10.39(5) cm −1 and a rhombic ratio (E/D) of 0.21(1). The magnetic properties have also been probed by direct-current (DC) magnetometry, suggesting minor differences in anisotropy from the previously reported polymorph (Co-N 3 ′). Ligand-field theory (LFT) analysis indicates that the structures of Co-N 3 and Co-N 3 ′ are closer to D 2d symmetry than other symmetries considered. Alternate-current (AC) susceptibility reveals slow magnetic relaxation under an applied field, indicating that Co-N 3 is a field-induced single-ion magnet (SIM). Here, while both Co-N 3 and Co-N 3 ′ were studied by DC magnetometry, one unusual aspect of the current work on Co-N 3 is that advanced spectroscopies HFEPR, FIRMS, and INS were used to directly observe transitions between ZFS split states, giving accurate SH parameters.

Hand, Adam T. [Univ. of Tennessee, Knoxville, TN (↗
DOE OSTI2021

New Modulation and Impact of Transformer Leakage Inductance on Current-Source Solid-State Transformer

This article presents a novel modulation scheme for device voltage stress mitigation and comprehensive analysis of the impact of transformer leakage inductance in a current-source solid-state transformer (SST). Different from dual active bridge (DAB) SST, the operation of the current-source SST is similar to that of a flyback converter. The device bridge on only one side of the transformer is active to store energy into or release energy from the magnetizing inductance which acts as a current-source dc link. Such flyback operation with reverse-blocking switches can lead to additional device voltage stress and incomplete zero-voltage switching (ZVS) on the current-source soft-switching solid-state transformer (S4T) under conventional modulation. A new modulation scheme is proposed to address this issue. Moreover, different from the DAB, the leakage inductance of the medium-frequency transformer (MFT) in the S4T is a parasitic element similar to that in a matrix SST and can cause additional device voltage stress. Though the resonant capacitors, originally added to achieve ZVS, can absorb and recycle the leakage energy in the S4T, these capacitors need to be increased with larger leakage inductances to limit the voltage stress. However, large resonant capacitors can result in more lost duty cycles and reduced efficiency. The impact of such leakage inductance on device voltage stress is analyzed comprehensively, which is critical to guide future research and design of the S4T. Experimental results from S4T prototypes for DC-DC, multiport AC-DC, and AC-AC conversion with 1:1 and 4:1 MFT comprehensively verify the proposed concepts. Lastly, a case study of a three-phase AC-AC S4T over a power range from 1 kVA to 100 kVA each module reveals that the MFT leakage inductance should be less than 1% of the magnetizing inductance for safe operation.

14 SOLAR ENERGY↗
DOE OSTI2025

Solid State Transformer Architecture and Control Compensation for Common Mode Currents

A high-altitude electromagnetic pulse (HEMP) or similar geomagnetic disturbance (GMD) has the potential to impact the operation of large-scale electric power grids. By introducing low-frequency common-mode (CM) currents, these events can degrade the performance of critical system components, such as large power transformers by introducing CM currents which can lead to magnetic saturation of the transformer core. In this work, a solid-state transformer (SST) is developed to replace susceptible equipment and improve grid resiliency by safely absorbing these CM disturbances. This device will be referred to as a common-mode solid-state transformer (CM-SST). An SST architecture based on a four-legged AC/DC converter is developed. This architecture enables active control of CM signals without disturbing the AC voltages or the real and reactive power delivery capabilities. A system-level model of this architecture is created, and time-domain simulations are performed to evaluate the SST’s performance in response to simulated CM disturbances. A control strategy for mitigating CM current is also investigated. Hamiltonian surface shaping and power flow control (HSSPFC) is used to design a nonlinear controller for the SST’s output inverter. The objectives of the controller are to suppress CM-induced AC current offsets and regulate AC currents to desired setpoints. Nonlinear system analysis is applied to design and validate the controller. Two cases are tested: (a) the proposed four-leg inverter and (b) a standard three-leg inverter. The results show that the proposed controller rapidly mitigates CM disturbances while maintaining high-quality AC current waveforms in the four-leg configuration. Finally, the hardware performance of an SST prototype is evaluated. In particular, the ability of the SST to safely redirect and absorb CM currents is demonstrated, showing how it can protect neighboring conventional transformers in the system. The study confirms that appropriate control laws allow the SST to protect both itself and adjacent transformers during a HEMP or GMD event.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2020

Soft-Switching Solid-State Transformer With Reduced Conduction Loss

Solid-state transformers (SSTs) are a promising solution photovoltaic (PV), wind, traction, data center, battery energy storage system (BESS), and fast charging electric vehicle (EV) applications. The traditional SSTs are typically three-stage, i.e., hard-switching cascaded multilevel rectifiers and inverters with dual active bridge (DAB) converters, which leads to bulky passives, low efficiency, and high electromagnetic interference (EMI). This article proposes a new soft-switching solid-state transformer (S4T). The S4T has full-range zero-voltage switching (ZVS), electrolytic capacitor-less dc link, and controlled dv/dt, which reduces EMI. The S4T comprises two reverse-blocking current-source inverter (CSI) bridges, auxiliary branches for ZVS, and transformer magnetizing inductor as a reduced dc link with 60% ripple. Compared with the prior S4T, an effective change on the leakage inductance diode is made to reduce the number of the devices on the main power path by 20% for significant conduction loss saving and retain the same functionality of damping the resonance between the leakage and resonant capacitors and recycling trapped leakage energy. The conduction loss saving is crucial, being the dominating loss mechanism in SSTs. Importantly, the proposed single-stage SST not only holds the potential for high power density and high efficiency but also has full functionality, e.g., multiport dc loads integration, voltage regulation, and reactive power compensation, unlike the traditional single-stage matrix SST. The S4T can achieve single-stage isolated bidirectional dc–dc, ac–dc, dc–ac, or ac–ac conversion. It can also be configured input-series output-parallel (ISOP) in a modular way for medium-voltage (MV) grids. Hence, the S4T is a promising candidate for the SST. The full functionality, e.g., voltage buck–boost, multiport, etc., and the universality of the S4T for the dc–dc, dc–ac, and ac–ac conversion are verified through the simulations and experiments of two-port and three-port MV prototypes based on 3.3 kV SiC MOSFETs in dc–dc, dc–ac, and ac–ac modes at 2 kV.

14 SOLAR ENERGY↗
DOE OSTI2023

Control System of Multi-Port Autonomous Reconfigurable Solar Power Plant (MARS) & HIL Platforms for Design

Multi-port autonomous reconfigurable solar power plant (MARS) provides an attractive alternative to connect photovoltaic (PV) and energy storage systems (ESSs) to high-voltage direct current (HVdc) links and high-voltage alternating current (ac) grids. In this paper, a unique hierarchical control system of MARS is proposed and evaluated. To evaluate the control system and associated algorithms in early-stage research of complex architectures like MARS, it is important to develop unique suitable hardware-in-the-loop (HIL) platforms. In this paper, the HIL platforms for MARS to evaluate the performance of the hierarchical control system and the control algorithms implemented are presented. Further, they help with the design process of control systems. The real-time simulation models and algorithms that are utilized for MARS in the HIL platforms are also discussed in the paper. The HIL experiments of the control system of MARS showcase the capability to provide continuity of operation under faults and frequency support to the power grid during loss of generation. They also showcase the stability of the proposed hierarchical control system of MARS.

14 SOLAR ENERGY↗
DOE OSTI2021

A High-Frequency Planar Transformer with Medium-Voltage Isolation

This paper presents the design of a low-loss, high-frequency planar transformer having medium-voltage (10’s of kV) isolation capability while transformer primary and secondary windings are interleaved to reduce losses. Medium-voltage isolation between adjacent printed circuit board (PCB) layers is extremely challenging using traditional PCB dielectrics. The isolation requirement is met using PCB with 7 kV/mil polyimide (Panasonic Felios RF775) as the dielectric, and by an appropriate layout of the windings and the inter-winding vias. The transformer is used to implement a dual active bridge (DAB) converter in a stackable dc-ac architecture where the dc port is connected to a photovoltaic (PV) string and ac outputs are connected in series to achieve direct PV string-to-medium voltage conversion without the need for low-voltage collection or a bulky line frequency transformer. Since each DAB transformer processes time-varying power, a design methodology is developed to minimize line-cycle-averaged losses. Experimental results are presented for a 1:1 planar transformer in a 7.5 kW SiC-based dc-to-ac module operating at 200 kHz. Isolation of 26 kV between the primary and secondary layers and between the windings and the core is verified using a hipot tester.

insulation resistance↗
DOE OSTI2021

A High-Frequency Planar Transformer with Medium-Voltage Isolation: Preprint

This paper presents the design of a low-loss, high-frequency planar transformer having medium-voltage (10's of kV) isolation capability while transformer primary and secondary windings are interleaved to reduce losses. Medium-voltage isolation between adjacent printed circuit board (PCB) layers is extremely challenging using traditional PCB dielectrics. The isolation requirement is met using PCB with $7$\,kV/mil polyimide (Panasonic Felios RF775) as the dielectric, and by an appropriate layout of the windings and the inter-winding vias. The transformer is used to implement a dual active bridge (DAB) converter in a stackable dc-ac architecture where the dc port is connected to a photovoltaic (PV) string and ac outputs are connected in series to achieve direct PV string-to-medium voltage conversion without the need for low-voltage collection or a bulky line frequency transformer. Since each DAB transformer processes time-varying power, a design methodology is developed to minimize line-cycle-averaged losses. Experimental results are presented for a 1:1 planar transformer in a 7.5\,kW SiC-based dc-to-ac module operating at 200 kHz. Isolation of 26 kV between the primary and secondary layers and between the windings and the core is verified using a hipot tester.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2023

Modular, Multifunction, Multiport and Medium Voltage Utility Scale SiC PV Inverter (Final Report)

This project is to develop and demonstrate a Modular, Multi-function, Multiport and Medium Voltage utility scale SiC solar inverter (M4 Inverter). The M4 Inverter is a next generation utility scale PV + storage inverter that can substantially reduce the levelized cost of energy (LCOE) while providing grid friendly ancillary services. Conventional utility scale solar inverters includes three parts, a megawatt rated solar inverter, a low frequency transformer (LFT) and a medium voltage switch gear. The proposed M4 Inverter directly converts the DC output of solar panels to medium voltage AC, eliminating the bulky and costly LFT. The M4 Inverter also has a DC port to interface with an additional energy storage device. This plus its bidirectional power flow capability, allows multiple functions in addition to PV maximum power tracking be achieved. These additional functionalities include but not limited to reactive power support, peak shaving, fast frequency regulation and synthetic inertia. Predicted LCOE reductions with these added functionalities, improved efficiency and longer lifetime time are more than 30% compared with the 2017 utility scale solar LCOE. A 1MVA SiC M4 Inverter was developed and tested at high power level. The project has also advanced the state of the art in controller hardware in the loop simulation capability. Power electronic innovations introduced in the M4 Inverter includes 1700V SiC MOSFET application in 1500V PV system, soft switching three-port power converters and modular converter architecture.

24 POWER TRANSMISSION AND DISTRIBUTION↗