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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
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NASA NTRS1998

Far-Infrared Heterodyne Spectrometer for Sofia

The project goal was to evaluate the scientific capabilities and technical requirements for a far-infrared heterodyne spectrometer suitable for the SOFIA Airborne Observatory, which is now being developed by NASA under contract to the Universities Space Research Association (USRA). The conclusions detailed below include our specific recommendations for astronomical observations, as well as our intended technical approach for reaching these scientific goals. These conclusions were presented to USRA in the form of a proposal to build this instrument. USRA subsequently awarded the University of Colorado a 3-year grant to develop the proposed Hot-Electron micro-Bolometer (HEB) mixer concept for high frequencies above 3 THz, as well as other semiconductor mixer technologies suitable for high sensitivity receivers in the 2-6 THz frequency band.

Betz, A. L.↗
NASA NTRS2000

Microwave Mixing and if Bandwidth in Sub-Micron Long High -T(sub c) Hot - Electron Bolometers

The hot-electron bolometer (HEB) mixer made from a high-T(sub c) superconductor (HTS) was introduced recently as a competing alternative to a Schottky mixer. The HEB mixer would require 100-times less LO power and thus would be a desirable candidate for long-term observational missions such as atmospheric remote-sensing and planetary science. The required cooling temperatures between 65 K and 75 K can be achieved with available space-qualified coolers or even with passive radiative coolers.

Harnack, Oliver↗
NASA NTRS2001

Long-Term Reliability of SiGe/Si HBTs From Accelerated Lifetime Testing

Accelerated lifetime tests were performed on double-mesa structure Si(0.7)Ge(0.3)/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175 C-275 C. The transistors (with 5x20 sq micron emitter area) have DC current gains approx. 40-50 and f(sub T) and f(sub max) of up to 22 GHz and 25 GHz, respectively. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REED has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of these devices at room temperature under 1.35 x 10(exp 4) A/sq cm current density operation is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation.

Bhattacharya, Pallab↗
NASA NTRS2001

Reduced T(sub c) Niobium Superconducting HEB Mixers

A reduction in the mixer noise is expected when using superconductors with a lower transition temperature (T(sub c)) since the thermal noise components of the mixer noise should scale with T(sub c). Also, the local oscillator (LO) power required for a diffusion-cooled device should decrease as T(sub c) when T(sub bath) << T(sub c). We previously studied mixing in aluminum based hot-electron bolometers (HEBs) at microwave frequencies (approximately 30 GHz), and observed a significant improvement in noise performance, and a reduction in LO power as predicted. However, the bias voltage range over which good mixer performance was observed was approximately 5 - 10 microV. These devices are thus susceptible to saturation effects, in particular output saturation. In the present work, we have investigated Nb HEBs whose T(sub c) is lowered by applying a magnetic field. The goal is to study a case intermediate between Nb and Al, and hopefully to find properties that will allow use in practical receivers. A 15 kOe perpendicular magnetic field was applied to a Nb HEB (L = 0.16 micrometers, W = 0.08 micrometers, R(sub N) = 90 ohms) to reduce T(sub c) from 5.2 K to 2.4 K. The mixer noise, as inferred from the output noise and the conversion efficiency, decreased from 390 K, DSB to 171 K, DSB. The LO power required for near optimum mixer conversion efficiency (eta(sub mixer) = -9 dB in this device) was 8 nW in zero field, and approximately 2 nW when T(sub c) was reduced to 2.4 K. T(sub bath) = 0.22 K. The conversion bandwidth was previously measured to be 2.4 GHz and the same bandwidth was observed in the presence of a magnetic field. By lowering T(sub c), the voltage range over which good mixing was observed also decreased. However, even with T(sub c) reduced to 2.4 K, the conversion efficiency dropped by 3 dB from its maximum value only when the bias voltage was changed by approximately 90 microV. Saturation effects should thus be much less of a concern in these devices than in Al HEBS. In situations where the application of a large magnetic field is not feasible, we suggest using Ta based HEBS. Ta HEBs should have T(sub c) = 3 - 3.5 K and material properties very similar to Nb.

Siddiqi, I.↗
NASA NTRS2001

HgCdTe Photoconductive Mixers for 2-8 THz

Heterodyne spectroscopy has been taken to wavelengths as short as 63 micrometers with Schottky-diode mixers. Schottkys, however, are relatively insensitive compared to superconducting mixers such as the hot-electron microbolometer (HEB), which has an effective quantum efficiency of 3% at 120 micrometers (2.5 THz). Although HEB sensitivities are bound to improve, there will always be losses associated with antenna coupling of radiation into sub-micron size devices. Another approach to far infrared (FIR) mixer design is to use a photoconductive device which can be made much larger than a wavelength, and thus act as its own antenna. For example, HgCdTe photodiodes have been used as mixers in the lambda = 10 micrometers band for over 25 years, with sensitivities now only a factor of 2 from the quantum-noise-limit. HgCdTe can also be applied at FIR wavelengths, but surprisingly little work has been done to date. The exception is the pioneering work of Spears and Kostiuk and Spears, who developed HgCdTe photomixers for the 20-120 micrometer region. The spectral versatility of the HgCdTe alloy is well recognized for wavelengths as long as 8-20 micrometers. What is not so recognized, however, is that theoretically there is no long wavelength limit for appropriately composited HgCdTe. Although Spears successfully demonstrated a photoconductive response from HgCdTe at 120 micrometers, this initial effort was apparently never followed up, in part because of the difficulty of controlling the HgCdTe alloy composition with liquid-phase-epitaxy (LPE) techniques. With the availability of precise molecular-beam-epitaxy (MBE) since the early 1990's, it is now appropriate to reconsider HgCdTe for detector applications longward of lambda = 20 micrometers. We recently initiated an effort to fabricate detectors and mixers using II-VI materials for FIR wavelengths. Of particular interest are device structures called superlattices, which offer a number of advantages for high sensitivity direct detectors and very long wavelength heterodyne mixers.

Betz, A. L.↗
NASA NTRS2002

Superconducting Mixers for Far-Infrared Spectroscopy

The goal of this project was to fabricate and test planar arrays of superconducting mixers for the 2-6 THz band. The technology is intended for multi-beam receivers aboard Explorer-class missions and the SOFIA Airborne Observatory. The mixer technology is the superconducting transition-edge microbolometer, which is more commonly known as the Hot-Electron micro-Bolometer (HEB). As originally proposed, two superconducting technologies were to be developed: (1) low-Tc niobium HEBs which could approach quantum-noise-limited sensitivities but require cooling to 2- 4 K, and (2) high-Tc YBCO HEBs with sensitivities 10 times worse but with a relaxed cooling requirement of 30-60 K. The low-Tc devices would be best for astronomy applications on SOFIA, whereas the high-Tc devices would be more suitable for planetary missions using systems without stored cryogens. The work plan called for planar micro-fabrication and initial testing of HEB devices at the NIST Boulder clean-room facility. Subsequent assembly and RF testing of selected devices would be done at the CASA laboratory at U. Colorado. Approximately 1-year after work began on this project, Dr. Eyal Gerecht joined the NIST group, and assumed day-to-day responsibility for Nb-HEB development at NIST outside of micro-fabrication. The YBCO-HEB work was to be guided by Dr. Ron Ono, who was the NIST expert in YBCO technology. Unfortunately, recurrent health problems limited the time Ron could devote to the project in its first year. These problems became aggravated in early 2001, and sadly led to Ron's death in October, 2001. His loss was not only a blow to his friends and associates at NIST, but was mounted by the US superconductivity community at large. With his passing, work on high-Tc HEBs ceased at NIST. There was no one to replace him or his expertise. Our work subsequently shifted solely to Nb-HEB devices. In the sections which follow, our progress in the development of diffusion-cooled Nb-HEB mixers is detailed. To simplify the terminology, these devices will subsequently be called DHEB mixers to distinguish them from phonon-cooled devices (PHEBs).

Betz, A. L.↗
NASA NTRS2003

Long-Term Reliability of High Speed SiGe/Si Heterojunction Bipolar Transistors

Accelerated lifetime tests were performed on double-mesa structure Si/Si0.7Ge0.3/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175C-275C. Both single- and multiple finger transistors were tested. The single-finger transistors (with 5x20 micron sq m emitter area) have DC current gains approximately 40-50 and f(sub T) and f(sub MAX) of up to 22 GHz and 25 GHz, respectively. The multiple finger transistors (1.4 micron finger width, 9 emitter fingers with total emitter area of 403 micron sq m) have similar DC current gain but f(sub T) of 50 GHz. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of the devices at room temperature is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation. SiGe/Si based amplifier circuits were also subjected to lifetime testing and we extrapolate MTTF is approximately 1.1_10(exp 6) hours at 125iC junction temperature from the circuit lifetime data.

Ponchak, George E.↗
NASA NTRS2004

SQUID Multiplexers for Cryogenic Detector Arrays

SQUID multiplexers make it possible to build arrays of thousands of cryogenic detectors with a manageable number of readout channels. We are developing time-division SQUID multiplexers based on Nb trilayer SQUIDs to read arrays of superconducting transition-edge sensors. Our first-generation, 8-channel SQUID multiplexer was used in FIBRE, a one-dimensional TES array for submillimeter astronomy. Our second-generation 32-pixel multiplexer, based on an improved architecture, has been developed for instruments including Constellation-X, SCUBA-2, and solar x-ray astronomy missions. SCUBA-2, which is being developed for the James Clerk Maxwell Telescope, will have more than 10,000 pixels. We are now developing a third-generation architecture based on superconducting hot-electron switches. The use of SQUID multiplexers in instruments operating at above 2 K will also be discussed.

Irwin, Kent↗
NASA NTRS1995

Low-Noise Wide Bandwith, Hot Electron Bolometer Mixers for Submillimeter Wavelengths

Recently a novel superconductive hot-electron micro-bolometer has been proposed which is both fast and sensitive (D. E. Prober, Appl. Phys. Lett. 62, 2119, 1993). This device has several important properties which make it useful as a heterodyne sensor for radioastronomy applications at frequencies above 1 THz. The thermal response time of the device is fast enough, several 10's of picoseconds, to allow for IF's of several GHz. This bolometer mixer should operate well up to at least 10 THz. There is no energy gap limitation as in an SIS mixer, since the mixing process relies on heating of the electron gas. In fact, rf power is absorbed more uniformly above the gap frequency. The mixer noise should be near quantum-limited, and the local oscillator (LO) power requirement is very low: / 10 nW for a Nb device. One of the unique features of this device is that it employs rapid electron diffusion into a normal metal, rather than phonon emission, as the thermal conductance that cools the heated electrons. In order for diffusion to dominate over phonon emission, the device must be short, less than 0.5.

Bolometer Mixers↗
NASA NTRS2004

THz Local Oscillator Technology

The last decade has seen a number of technological advancements that have now made it possible to implement fully solid state local oscillator chains up to 2 THz. These chains are composed of cascaded planar multiplier stages that are pumped with W-band high power sources. The high power W-band sources are achieved by power combining MMIC amplifiers and can provide in access of 150 mW with about 10% bandwidth. Planar diode technology has also enabled novel circuit topologies that can take advantage of the high input power and demonstrate significant efficiencies well into the THz range. Cascaded chains to 1.9 THz have now been demonstrated with enough output power to successfully pump hot-electron bolometer mixers in this frequency range. An overview of the current State-of-the-Art of the local oscillator technology will be presented along with highlighting future trends and challenges.

multipliers↗
NASA NTRS2007

Distributed Antenna-Coupled TES for FIR Detectors Arrays

We describe a new architecture for a superconducting detector for the submillimeter and far-infrared. This detector uses a distributed hot-electron transition edge sensor (TES) to collect the power from a focal-plane-filling slot antenna array. The sensors lay directly across the slots of the antenna and match the antenna impedance of about 30 ohms. Each pixel contains many sensors that are wired in parallel as a single distributed TES, which results in a low impedance that readily matches to a multiplexed SQUID readout These detectors are inherently polarization sensitive, with very low cross-polarization response, but can also be configured to sum both polarizations. The dual-polarization design can have a bandwidth of 50The use of electron-phonon decoupling eliminates the need for micro-machining, making the focal plane much easier to fabricate than with absorber-coupled, mechanically isolated pixels. We discuss applications of these detectors and a hybridization scheme compatible with arrays of tens of thousands of pixels.

antenna↗
NASA NTRS2005

NASA Tech Briefs, November 2005

Topics covered include: Laser System for Precise, Unambiguous Range Measurements; Flexible Cryogenic Temperature and Liquid-Level Probes; Precision Cryogenic Dilatometer; Stroboscopic Interferometer for Measuring Mirror Vibrations; Some Improvements in H-PDLCs; Multiple-Bit Differential Detection of OQPSK; Absolute Position Encoders With Vertical Image Binning; Flexible, Carbon-Based Ohmic Contacts for Organic Transistors; GaAs QWIP Array Containing More Than a Million Pixels; AutoChem; Virtual Machine Language; Two-Dimensional Ffowcs Williams/Hawkings Equation Solver; Full Multigrid Flow Solver; Doclet To Synthesize UML; Computing Thermal Effects of Cavitation in Cryogenic Liquids; GUI for Computational Simulation of a Propellant Mixer; Control Program for an Optical-Calibration Robot; SQL-RAMS; Distributing Data from Desktop to Hand-Held Computers; Best-Fit Conic Approximation of Spacecraft Trajectory; Improved Charge-Transfer Fluorescent Dyes; Stability-Augmentation Devices for Miniature Aircraft; Tool Measures Depths of Defects on a Case Tang Joint; Two Heat-Transfer Improvements for Gas Liquefiers; Controlling Force and Depth in Friction Stir Welding; Spill-Resistant Alkali-Metal-Vapor Dispenser; A Methodology for Quantifying Certain Design Requirements During the Design Phase; Measuring Two Key Parameters of H3 Color Centers in Diamond; Improved Compression of Wavelet-Transformed Images; NASA Interactive Forms Type Interface - NIFTI; Predicting Numbers of Problems in Development of Software; Hot-Electron Photon Counters for Detecting Terahertz Photons; Magnetic Variations Associated With Solar Flares; and Artificial Intelligence for Controlling Robotic Aircraft.

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NASA NTRS2004

NASA Tech Briefs, October 2004

Topics include: Relative-Motion Sensors and Actuators for Two Optical Tables; Improved Position Sensor for Feedback Control of Levitation; Compact Tactile Sensors for Robot Fingers; Improved Ion-Channel Biosensors; Suspended-Patch Antenna With Inverted, EM-Coupled Feed; System Would Predictively Preempt Traffic Lights for Emergency Vehicles; Optical Position Encoders for High or Low Temperatures; Inter-Valence-Subband/Conduction-Band-Transport IR Detectors; Additional Drive Circuitry for Piezoelectric Screw Motors; Software for Use with Optoelectronic Measuring Tool; Coordinating Shared Activities; Software Reduces Radio-Interference Effects in Radar Data; Using Iron to Treat Chlorohydrocarbon-Contaminated Soil; Thermally Insulating, Kinematic Tensioned-Fiber Suspension; Back Actuators for Segmented Mirrors and Other Applications; Mechanism for Self-Reacted Friction Stir Welding; Lightweight Exoskeletons with Controllable Actuators; Miniature Robotic Submarine for Exploring Harsh Environments; Electron-Spin Filters Based on the Rashba Effect; Diffusion-Cooled Tantalum Hot-Electron Bolometer Mixers; Tunable Optical True-Time Delay Devices Would Exploit EIT; Fast Query-Optimized Kernel-Machine Classification; Indentured Parts List Maintenance and Part Assembly Capture Tool - IMPACT; An Architecture for Controlling Multiple Robots; Progress in Fabrication of Rocket Combustion Chambers by VPS; CHEM-Based Self-Deploying Spacecraft Radar Antennas; Scalable Multiprocessor for High-Speed Computing in Space; and Simple Systems for Detecting Spacecraft Meteoroid Punctures.

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