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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Failure investigation and mitigation after experimental research reactor fuel plate deformation in an irradiation device

Experimental research reactor fuel testing is conducted in the Belgian Reactor 2 (BR2) of the Belgian Nuclear Research Centre (SCK CEN) in dedicated irradiation vehicles or rigs. One such vehicle allows flat full-size fuel plates to be irradiated by inserting them into slotted baskets that captures a narrow portion of the longitudinal edges of the plates. The motion of the fuel plates within the baskets is possible within the narrow slots and thus, the plate is considered to be unattached. The design intentionally omits fixing mechanisms of the fuel plates to the baskets to facilitate the inspection and repositioning of the plates between the irradiation cycles and the accommodation of thermal expansion of the plates in the lateral direction. However, loosely inserted fuel plates have weak structural boundary conditions allowing for larger out-of-plane deflections caused by hydrodynamic loads exerted by the flowing coolant, as compared to those of fixed plates. Unexpected large deformations of plates occurred in several irradiation cycles that further resulted in a loss of cladding integrity. These deformations could not be attributed to a single source. This triggered a series of thermal hydraulic, structural, and fluid-structure interaction analyses aiming at understanding the observed phenomenon. The analyses revealed that, for a certain combination of unfavorable manufacturing and assembly tolerances, fuel plate edges could escape out of the slots in the irradiation basket due to the hydrodynamic load. Subsequently, the plate could become wedged inside the basket coolant channel opening. This resulted in reduced coolant flow and accelerated temperature increase and thermal expansion of the plate while under irradiation. This unfavorable feedback loop could then lead to excessive plate surface temperatures, deformed plates and cladding failure, as was observed in the experiments. These analyses not only provided a probable cause of the fuel plate failures, but also resulted in a new and improved design of the irradiation basket to avoid these issues in the future. In conclusion, a series of recent successful irradiations confirm that the sources of failures were identified correctly, and the implemented mitigations were adequate.

BR2↗
DOE OSTI2022

Piezo-optomechanical cantilever modulators for VLSI visible photonics

Visible-wavelength very large-scale integration photonic circuits have a potential to play important roles in quantum information and sensing technologies. The realization of scalable, high-speed, and low-loss photonic mesh circuits depends on reliable and well-engineered visible photonic components. Here, we report a low-voltage optical phase shifter based on piezo-actuated mechanical cantilevers, fabricated on a CMOS compatible, 200 mm wafer-based visible photonics platform. We show linear phase and amplitude modulation with 6 V π cm in differential operation, −1.5 to −2 dB insertion loss, and up to 40 dB contrast in the 700–780 nm range. By adjusting selected cantilever parameters, we demonstrate a low-displacement and a high-displacement device, both exhibiting a nearly flat frequency response from DC to a peak mechanical resonance at 23 and 6.8 MHz respectively, which, through resonant enhancement of Q ∼ 40, further decreases the operating voltage down to 0.15 V π cm.

Dong, Mark↗
DOE OSTI2021

SMC 2021 : Analyzing Resource Utilization and User Behavior on Titan Supercomputer

Resource utilization statistics of submitted jobs on a supercomputer can help us understand how users from various scientific domains use HPC platforms and better design a job scheduler. We explore to generate insight regarding workload distribution and usage pattern domains from job scheduler trace, GPU failure information, and project-specific information collected from Titan supercomputer. Furthermore, we want to know how the scheduler performance varies over time and how the users' scheduling behavior changes following a system failure. These observations have the potential to provide valuable insight, which is helpful to prepare for system failures. These practices will help us develop and apply novel machine learning algorithms in understanding system behavior, requirement, and better scheduling of HPC systems. There are two datasets, RUR and GPU. RUR: This dataset is the job scheduler traces collected from the Titan supercomputerfrom 01/01/2015 to 07/31/2019 (2015.csv - 2019.csv). These were collected usingResource Utilization Report (RUR), a Cray-developed resource-usage data collectionand reporting system. It contains the usage information of its critical resources (CPU,Memory, GPU, and I/O) of each running job on Titan during that period [2]. ProjectAreas: Every job is associated with a project ID. TheProjectAreas.csvdatasetprovides a mapping of the project ID to its domain science. GPU: There have been some hardware-related issues in the GPUs in Titan that caused some GPUs to fail, sometimes irrecoverably during some job runs. This dataset provides information regarding these failures during the execution of the submitted jobs. GPUs on Titan are uniquely identified by a serial number (SN), and they are installed in a location. A GPU can be installed in a location, then removed from that location following a failure, and then re-installed in a different location after fixing the problem. If the failure can't be recovered, the GPU might be removed entirely from Titan. There are two prominent types of failures that resulted in the removal of GPUs from Titan: Double Bit Error (DBE) and Out of the Bus (OTB). The dataset (gc_full.csv) has the following fields: 1. SN : Serial number of a GPU 2. location : The location where it is installed 3. insert : The time when it was inserted into that location 4. remove : The time when it was removed from that location 5. duration : Amount of time the GPU spent in this location 6. out : If the device was taken out entirely w/o a re-installment into a new location. 7. event : If the GPU was taken out entirely, the reason for its removal. To learn more about this dataset, please refer to the git repositoryhttps://github.com/olcf/TitanGPULifeand the related publication [1]. References [1] George Ostrouchov, Don Maxwell, Rizwan A Ashraf, Christian Engelmann, MallikarjunShankar, and James H Rogers. Gpu lifetimes on titan supercomputer: Survival analysisand reliability. InSC20: International Conference for High Performance Computing,Networking, Storage and Analysis, pages 1-14. IEEE, 2020. [2] Feiyi Wang, Sarp Oral, Satyabrata Sen, and Neena Imam. Learning from five-yearresource-utilization data of titan system. In2019 IEEE International Conference onCluster Computing (CLUSTER), pages 1-6. IEEE, 2019.

42 ENGINEERING↗
DOE OSTI2024

Methods and devices for electrochemical relithiation of lithium-ion batteries

Among other things, the present disclosure relates to re-purposing used lithium-ion batteries. The present disclosure includes treating an electrode using a solvent prior to electrochemically relithiating the electrode. In some embodiments, the relithiation may be done using a roll-to-roll device, wherein the electrode may be secured on a first pin and a second pin, then it may be unwound and submerged in an electrolyte solution. Lithium ions may be inserted into the electrode using a voltage. The layer of lithium may provide lithium ions to the electrode.

Smith, Kandler Alan↗
DOE OSTI2023

Visible-telecom tunable dual-band optical isolator based on dynamic modulation in thin-film lithium niobate

Optical isolators are an essential component of photonic systems. Current integrated optical isolators have limited bandwidths due to stringent phase-matching conditions, resonant structures, or material absorption. Here, we demonstrate a wideband integrated optical isolator in thin-film lithium niobate photonics. We use dynamic standing-wave modulation in a tandem configuration to break Lorentz reciprocity and achieve isolation. We measure an isolation ratio of 15 dB and insertion loss below 0.5 dB for a continuous wave laser input at 1550 nm. In addition, we experimentally show that this isolator can simultaneously operate at visible and telecom wavelengths with comparable performance. Isolation bandwidths up to ∼100 nm can be achieved simultaneously at both visible and telecom wavelengths, limited only by the modulation bandwidth. Our device’s dual-band isolation, high flexibility, and real-time tunability can enable novel non-reciprocal functionality on integrated photonic platforms.

Shah, Manav↗
DOE OSTI2020

Apparatus and method for manufacturing an air maintenance tire

Apparatus and method for manufacturing an air maintenance tire includes an air pumping tube assembly station constructing an air pumping tube sub-assembly, a tire preparation station for forming passageways in the tire to accept an outlet device of the air pumping tube sub-assembly, an air pumping tube sub-assembly installation station and a pressure regulator installation station. The air pumping tube sub-assembly inserts into an elongate tire groove opening, facilitated by groove-spreading apparatus.

42 ENGINEERING↗
DOE OSTI2023

Compiler directed fine grained power management

Systems, methods, devices, and computer-implemented instructions for processor power management implemented in a compiler. In some implementations, a characteristic of code is determined. An instruction based on the determined characteristic is inserted into the code. The code and inserted instruction are compiled to generate compiled code. The compiled code is output.

Bharadwaj, Vedula Venkata Srikant↗
DOE OSTI2021

High-Speed Ionic Synaptic Memory Based on 2D Titanium Carbide MXene

Synaptic devices with linear high-speed switching can accelerate learning in artificial neural networks (ANNs) embodied in hardware. Conventional resistive memories however suffer from high write noise and asymmetric conductance tuning, preventing parallel programming of ANN arrays. Electrochemical random-access memories (ECRAMs), where resistive switching occurs by ion insertion into a redox-active channel, aim to address these challenges due to their linear switching and low noise. ECRAMs using 2D materials and metal oxides however suffer from slow ion kinetics, whereas organic ECRAMs enable high-speed operation but face challenges toward on-chip integration due to poor temperature stability of polymers. Here, ECRAMs using 2D titanium carbide (Ti 3 C 2 T x ) MXene that combine the high speed of organics and the integration compatibility of inorganic materials in a single high-performance device are demonstrated. These ECRAMs combine the speed, linearity, write noise, switching energy, and endurance metrics essential for parallel acceleration of ANNs, and importantly, they are stable after heat treatment needed for back-end-of-line integration with Si electronics. The high speed and performance of these ECRAMs introduces MXenes, a large family of 2D carbides and nitrides with more than 30 stoichiometric compositions synthesized to date, as promising candidates for devices operating at the nexus of electrochemistry and electronics.

2D materials↗
DOE OSTI2020

Spin–orbit torques in structures with asymmetric dusting layers

Current-induced spin–orbit torques (SOTs) in heavy metal/ferromagnet heterostructures have emerged as an efficient method for magnetization switching with applications in nonvolatile magnetic memory and logic devices. However, experimental realization of SOT switching of perpendicular magnetization requires an additional inversion symmetry breaking, calling for modifications of the conventional SOT heterostructures. In this work, we study SOTs and deterministic switching of perpendicular magnetization by inserting different asymmetric dusting layers at the heavy metal/ferromagnet interface. Similar to the previous works with lateral structural asymmetry, we study the emergence of current-induced perpendicular effective magnetic fields (H z eff ). By examining three different material combinations of heavy metal/dusting layers (W/IrMn, Pt/IrMn, and W/Ta), we shed light on the origins of H z eff ; we show that H z eff is generically created in all the studied asymmetric structures, has a close correlation with the interfacial magnetic anisotropy, and is independent of the signs of spin Hall angles of the materials. Furthermore, we show that the induction of H z eff enables field-free deterministic SOT switching of perpendicular magnetization. Our results can be used in designing SOT heterostructures for practical applications in nonvolatile technologies.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

Piezoelectric-triboelectric heel charger to generate electricity from locomotion using level mechanism and mechanical SSHI boosting circuit

The disclosure provides an electricity generating insert for a piece of footwear, the insert can be removably placed in the heel portion, e.g. under the insole. The insert comprises a multilayer piezoelectric stack that alternatively flexes under the compression-decompression that occurs during locomotion, which flexing causes friction in the stack to generate electricity capable of charging electronic devices and the like, e.g. via a port on the footwear.

Wang, Ya↗
DOE OSTI2023

Neuromorphic Photonics Based on Phase Change Materials

Neuromorphic photonics devices based on phase change materials (PCMs) and silicon photonics technology have emerged as promising solutions for addressing the limitations of traditional spiking neural networks in terms of scalability, response delay, and energy consumption. In this review, we provide a comprehensive analysis of various PCMs used in neuromorphic devices, comparing their optical properties and discussing their applications. We explore materials such as GST (Ge 2 Sb 2 Te 5 ), GeTe-Sb 2 Te 3 , GSST (Ge 2 Sb 2 Se 4 Te 1 ), Sb 2 S 3 /Sb 2 Se 3 , Sc 0.2 Sb 2 Te 3 (SST), and In 2 Se 3 , highlighting their advantages and challenges in terms of erasure power consumption, response rate, material lifetime, and on-chip insertion loss. By investigating the integration of different PCMs with silicon-based optoelectronics, this review aims to identify potential breakthroughs in computational performance and scalability of photonic spiking neural networks. Further research and development are essential to optimize these materials and overcome their limitations, paving the way for more efficient and high-performance photonic neuromorphic devices in artificial intelligence and high-performance computing applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

QuantumNAT: quantum noise-aware training with noise injection, quantization and normalization

Parameterized Quantum Circuits (PQC) are promising towards quantum advantage on near-term quantum hardware. However, due to the large quantum noises (errors), the performance of PQC models has a severe degradation on real quantum devices. Take Quantum Neural Network (QNN) as an example, the accuracy gap between noise-free simulation and noisy results on IBMQ-Yorktown for MNIST-4 classification is over 60%. Existing noise mitigation methods are general ones without leveraging unique characteristics of PQC; on the other hand, existing PQC work does not consider noise effect. To this end, we present QuantumNAT, a PQC-specific framework to perform noise-aware optimizations in both training and inference stages to improve robustness. We experimentally observe that the effect of quantum noise to PQC measurement outcome is a linear map from noise-free outcome with a scaling and a shift factor. Motivated by that, we propose post-measurement normalization to mitigate the feature distribution differences between noise-free and noisy scenarios. Furthermore, to improve the robustness against noise, we propose noise injection to the training process by inserting quantum error gates to PQC according to realistic noise models of quantum hardware. Lastly, post-measurement quantization is introduced to quantize the measurement outcomes to discrete values, achieving the denoising effect. Extensive experiments on 8 classification tasks using 6 quantum devices demonstrate that QuantumNAT improves accuracy by up to 43%, and achieves over 94% 2-class, 80% 4-class, and 34% 10-class classification accuracy measured on real quantum computers. The code for construction and noise-aware training of PQC is available in the TorchQuantum library.

Wang, Hanrui↗
DOE OSTI2020

Containment seal

A containment seal seals a cable or tube to an opening accessing a containment vessel. The containment seal includes a lower body that attaches over the opening into the containment vessel. The cable or tube is inserted through a hole that extends axially through an upper body of the containment seal. Compression fittings are attached to the top and bottom ends of the upper body sealing the cable inside of the upper body. The cable sealed inside of the upper body in inserted through the lower body and into the opening accessing the containment vessel and a lower portion of the upper body is seated into the opening formed in the lower body. A retaining device compresses the upper body down against the lower body forming a seal between the upper body and lower body.

42 ENGINEERING↗
DOE OSTI2022

ECRAM Materials, Devices, Circuits and Architectures: A Perspective

Abstract Non‐von‐Neumann computing using neuromorphic systems based on two‐terminal resistive nonvolatile memory elements has emerged as a promising approach, but its full potential has not been realized due to the lack of materials and devices with the appropriate attributes. Unlike memristors, which require large write currents to drive phase transformations or filament growth, electrochemical random access memory (ECRAM) decouples the “write” and “read” operations using a “gate” electrode to tune the conductance state through charge‐transfer reactions, and every electron transferred through the external circuit in ECRAM corresponds to the migration of ≈1 ion used to store analogue information. Like static dopants in traditional semiconductors, electrochemically inserted ions modulate the conductivity by locally perturbing a host's electronic structure; however, ECRAM does so in a dynamic and reversible manner. The resulting change in conductance can span orders of magnitude, from gradual increments needed for analog elements, to large, abrupt changes for dynamically reconfigurable adaptive architectures. In this in‐depth perspective, the history of ECRAM, the recent progress in devices spanning organic, inorganic, and 2D materials, circuits, architectures, the rich portfolio of challenging, fundamental questions, and how ECRAM can be harnessed to realize a new paradigm for low‐power neuromorphic computing are discussed.

Talin, A. Alec↗
DOE OSTI2024

Design of AlGaN-Zn(Si,Ge)N2 quantum wells for high-efficiency ultraviolet light emitters

The effect of inserting a nm-scale layer of Zn(Si,Ge)N2 into an AlGaN quantum well structure designed for light emission in the wavelength range from 255 to 305 nm is investigated here. The enhanced confinement of the hole within the quantum well results in an enhancement of the overlap of the hole and electron wave functions, resulting in an enhancement of the radiative recombination rate. In this theoretical calculation, for emission at a 270 nm wavelength, the enhancement in the wavefunction overlap can reach a factor of 7 when compared to an AlGaN quantum well device specifically engineered for optimal emission at the identical wavelength. Increases of almost an order of magnitude in both the peak spontaneous emission intensity and the radiative recombination rate are predicted. The peak emission wavelength can be tuned from 255 to 305 nm by adjusting the width and/or the composition of the inserted layer. The proposed structures provide a route to higher efficiency ultraviolet practical light emitting diodes and lasers.

Physics↗
DOE OSTI2022

Electroactive ZnO: Mechanisms, Conductivity, and Advances in Zn Alkaline Battery Cycling

Zinc oxide is of great interest for advanced energy devices because of its low cost, wide direct bandgap, non-toxicity, and facile electrochemistry. In zinc alkaline batteries, ZnO plays a critical role in electrode passivation, a process that hinders commercialization and remains poorly understood. Here, novel observations of an electroactive type of ZnO formed in Zn-metal alkaline electrodes are disclosed. The electrical conductivity of battery-formed ZnO is measured and found to vary by factors of up to 10 4 , which provides a first-principles-based understanding of Zn passivation in industrial alkaline batteries. Simultaneous with this conductivity change, protons are inserted into the crystal structure and electrons are inserted into the conduction band in quantities up to ≈10 20 cm –3 and ≈1 mAh gZnO –1 . Electron insertion causes blue electrochromic coloration with efficiencies and rates competitive with leading electrochromic materials. The electroactivity of ZnO is evidently enabled by rapid crystal growth, which forms defects that complex with inserted cations, charge-balanced by the increase of conduction band electrons. Furthermore, this property distinguishes electroactive ZnO from inactive classical ZnO. Knowledge of this phenomenon is applied to improve cycling performance of industrial-design electrodes at 50% zinc utilization and the authors propose other uses for ZnO such as electrochromic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

A novel approach to interface high-Q Fabry–Pérot resonators with photonic circuits

The unique benefits of Fabry–Pérot resonators as frequency-stable reference cavities and as an efficient interface between atoms and photons make them an indispensable resource for emerging photonic technologies. To bring these performance benefits to next-generation communications, computation, and time-keeping systems, it will be necessary to develop strategies to integrate compact Fabry–Pérot resonators with photonic integrated circuits. In this paper, we demonstrate a novel reflection cancellation circuit that utilizes a numerically optimized multi-port polarization-splitting grating coupler to efficiently interface high-finesse Fabry–Pérot resonators with a silicon photonic circuit. This circuit interface produces a spatial separation of the incident and reflected waves, as required for on-chip Pound–Drever–Hall frequency locking, while also suppressing unwanted back reflections from the Fabry–Pérot resonator. Using inverse design principles, we design and fabricate a polarization-splitting grating coupler that achieves 55% coupling efficiency. This design realizes an insertion loss of 5.8 dB for the circuit interface and more than 9 dB of back reflection suppression, and we demonstrate the versatility of this system by using it to interface several reflective off-chip devices.

Optics↗
DOE OSTI2024

2D material platform for overcoming the amplitude–phase tradeoff in ring resonators

Compact and high-speed electro-optic phase modulators play a vital role in various large-scale applications including optical computing, quantum and neural networks, and optical communication links. Conventional electro-refractive phase modulators such as silicon (Si), III-V and graphene on Si suffer from a fundamental tradeoff between device length and optical loss that limits their scaling capabilities. High-finesse ring resonators have been traditionally used as compact intensity modulators, but their use for phase modulation has been limited due to the high insertion loss associated with the phase shift. Here, we show that high-finesse resonators can achieve a strong phase shift with low insertion loss by simultaneous modulation of the real and imaginary parts of the refractive index, to the same extent, i.e., Δ n Δ k ∼1. To implement this strategy, we demonstrate an active hybrid platform that combines a low-loss SiN ring resonator with 2D materials such as graphene and transition metal dichalcogenide [tungsten disulphide (WSe 2 )], which induces a strong change in the imaginary and real parts of the index. Our platform consisting of a 25 µm long Gr-Al 2 O 3 -WSe 2 capacitor embedded on a SiN ring of 50 µm radius (∼8% ring coverage) achieves a continuous phase shift of (0.46±0.05) π radians with an insertion loss (IL) of 3.18±0.20 dB and a transmission modulation (Δ T Ring ) of 1.72±0.15dB at a probe wavelength ( λ p ) of 1646.18 nm. We find that our Gr-Al 2 O 3 -WSe 2 capacitor exhibits a phase modulation efficiency ( V π 2 ⋅ L ) of 0.530±0.016V⋅cm and can support an electro-optic bandwidth of 14.9±0.1GHz. We further show that our platform can achieve a phase shift of π radians with an IL of 5 dB and a minimum Δ T of 0.046 dB. We demonstrate the broadband nature of the binary phase response, by measuring a phase shift of (1.00±0.10) π radians, with an IL of 5.20±0.31dB and a minimal Δ T Ring of 0.015±0.006dB for resonances spanning from 1564 to 1650 nm. This SiN–2D hybrid platform provides the design for compact and high-speed reconfigurable circuits with graphene and transition metal dichalcogenide (TMD) monolayers that can enable large-scale photonic systems.

Datta, Ipshita (ORCID:0000000318842882)↗