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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

K-Band Latching Switches

Design, development, and tests are described for two single-pole-double-throw latching waveguide ferrite switches: a K-band switch in WR-42 waveguide and a Ka-band switch in WR-28 waveguide. Both switches have structurally simple junctions, mechanically interlocked without the use of bonding materials; they are impervious to the effects of thermal, shock, and vibration stresses. Ferrite material for the Ka-band switch with a proper combination of magnetic and dielectric properties was available and resulted in excellent low loss, wideband performance. The high power handling requirement of the K-band switch limited the choice of ferrite to nickel-zinc compositions with adequate magnetic properties, but with too low relative dielectric constant. The relative dielectric constant determines the junction dimensions for given frequency responses. In this case the too low value unavoidably leads to a larger than optimum junction volume, increasing the insertion loss and restricting the operating bandwidth. Efforts to overcome the materials-related difficulties through the design of a composite junction with increased effective dielectric properties efforts to modify the relative dielectric constant of nickel-zinc ferrite are examined.

Piotrowski, W. S.↗
DOE OSTI2020

Multiplexable high-temperature stable and low-loss intrinsic Fabry-Perot in-fiber sensors through nanograting engineering

This paper presents a method of using femtosecond laser inscribed nanograting as low-loss– and high-temperature–stable in-fiber reflectors. By introducing a pair of nanograting inside the core of a single-mode optical fiber, an intrinsic Fabry-Perot interferometer can be created for high-temperature sensing applications. The morphology of the nanograting inscribed in fiber cores was engineered by tuning the fabrication conditions to achieve a high fringe visibility of 0.49 and low insertion loss of 0.002 dB per sensor. Using a white light interferometry demodulation algorithm, we demonstrate the temperature sensitivity, cross-talk, and spatial multiplexability of sensor arrays. Both the sensor performance and stability were studied from room temperature to 1000°C with cyclic heating and cooling. Our results demonstrate a femtosecond direct laser writing technique capable of producing highly multiplexable in-fiber intrinsic Fabry-Perot interferometer sensor devices with high fringe contrast, high sensitivity, and low-loss for application in harsh environmental conditions.

Wang, Mohan (ORCID:0000000166784993)↗
NASA NTRS1993

Performance results of a 300-degree linear phase modulator for spaceborne communications applications

A phase modulator capable of large linear phase deviation, low loss, and wide band operation with good thermal stability was developed for deep space spacecraft transponder (DST) applications at X-band (8.415 GHz) and Ka-band (32 GHz) downlinks. The design uses a two-stage circulator-coupled reflection phase shifter with constant gamma hyperabrupt varactors and an efficient modulator driver circuit to obtain a phase deviation of +/-2.5 rad with better than 8 percent linearity. The measured insertion loss is 6.6 dB +/- 0.35 dB at 8415 MHz. Measured carrier and relative sideband amplitudes resulting from phase modulation by sine wave and square modulating functions agree well with the predicted results.

Mysoor, N. R.↗
NASA NTRS1993

Performance results of a 300-deg linear phase modulator for spaceborne communications applications

A phase modulator capable of large linear phase deviation, low loss, and wide band operation with good thermal stability was developed for deep space spacecraft transponder (DST) applications at X-band (8.415 GHz) and Ka-band (32 GHz) downlinks. The design uses a two-stage circulator-coupled reflection phase shifter with constant gamma hyperabrupt varactors and an efficient modulator driver circuit to obtain a phase deviation of +/- 2.5 rad with better than 8 percent linearity. The measured insertion loss is 6.6 dB +/- 0.35 dB at 8415 MHz. Measured carrier and relative sideband amplitudes resulting from phase modulation by sine wave and square modulating functions agree well with the predicted results.

Mysoor, Narayan R.↗
NASA NTRS1991

Design and analysis of low-loss linear analog phase modulator for deep space spacecraft X-band transponder (DST) application

This paper summarizes the design concepts, analyses, and the development of an X-band transponder low-loss linear phase modulator for deep space spacecraft applications. A single section breadboard circulator-coupled reflection phase modulator has been analyzed, fabricated, and evaluated. Two- and three-cascaded sections have been modeled and simulations performed to provide an X-band DST phase modulator with +/- 2.5 radians of peak phase deviation to accommodate down-link signal modulation with composite telemetry data and ranging with a deviation linearity tolerance +/- 8 percent and insertion loss of less than 10 +/- 0.5 dB. A two-section phase modulator using constant gamma hyperabrupt varactors and an efficient modulator driver circuit was breadboarded. The measured results satisfy the DST phase modulator requirements, and excellent agreement with the predicted results.

Mysoor, Narayan R.↗
NASA NTRS2010

Ka-Band Waveguide Two-Way Hybrid Combiner for MMIC Amplifiers

The design, simulation, and characterization of a novel Ka-band (32.05 0.25 GHz) rectangular waveguide two-way branch-line hybrid unequal power combiner (with port impedances matched to that of a standard WR-28 waveguide) has been created to combine input signals, which are in phase and with an amplitude ratio of two. The measured return loss and isolation of the branch-line hybrid are better than 22 and 27 dB, respectively. The measured combining efficiency is 92.9 percent at the center frequency of 32.05 GHz. This circuit is efficacious in combining the unequal output power from two Ka-band GaAs pseudomorphic high electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) power amplifiers (PAs) with high efficiency. The component parts include the branch-line hybrid-based power combiner and the MMIC-based PAs. A two-way branch-line hybrid is a four-port device with all ports matched; power entering port 1 is divided in phase, and into the ratio 2:1 between ports 3 and 4. No power is coupled to port 2. MMICs are a type of integrated circuit fabricated on GaAs that operates at microwave frequencies, and performs the function of signal amplification. The power combiner is designed to operate over the frequency band of 31.8 to 32.3 GHz, which is NASA's deep space frequency band. The power combiner would have an output return loss better than 20 dB. Isolation between the output port and the isolated port is greater than 25 dB. Isolation between the two input ports is greater than 25 dB. The combining efficiency would be greater than 90 percent when the ratio of the two input power levels is two. The power combiner is machined from aluminum with E-plane split-block arrangement, and has excellent reliability. The flexibility of this design allows the combiner to be customized for combining the power from MMIC PAs with an arbitrary power output ratio. In addition, it allows combining a low-power GaAs MMIC with a high-power GaN MMIC. The arbitrary port impedance allows matching the output impedance of the MMIC PA directly to the waveguide impedance without transitioning first into a transmission line with characteristic impedance of 50 ohms. Thus, by eliminating the losses associated with a transition, the overall SSPA efficiency is enhanced. For reducing the cost and weight when required in very large quantities, such as in the beam-forming networks of phased-array antenna systems, the combiner can be manufactured using metal-plated plastic. Two hybrid unequal power combiners can be cascaded to realize a non-binary combiner (for e.g., a three-way) and can be synergistically optimized for low VSWR (voltage standing wave ratio), low insertion loss, high isolation, and wide bandwidth using commercial off-the-shelf electromagnetic software design tools.

Simons, Rainee N.↗
NASA NTRS2003

Effects Of Environmental And Operational Stresses On RF MEMS Switch Technologies For Space Applications

Micro Electro Mechanical Systems (MEMS) have been heralded for their ability to provide tremendous advantages in electronic systems through increased electrical performance, reduced power consumption, and higher levels of device integration with a reduction of board real estate. RF MEMS switch technology offers advantages such as low insertion loss (0.1- 0.5 dB), wide bandwidth (1 GHz-100 GHz), and compatibility with many different process technologies (quartz, high resistivity Si, GaAs) which can replace the use of traditional electronic switches, such as GaAs FETS and PIN Diodes, in microwave systems for low signal power (x < 500 mW) applications. Although the electrical characteristics of RF MEMS switches far surpass any existing technologies, the unknown reliability, due to the lack of information concerning failure modes and mechanisms inherent to MEMS devices, create an obstacle to insertion of MEMS technology into high reliability applications. All MEMS devices are sensitive to moisture and contaminants, issues easily resolved by hermetic or near-hermetic packaging. Two well-known failure modes of RF MEMS switches are charging in the dielectric layer of capacitive membrane switches and contact interface stiction of metal-metal switches. Determining the integrity of MEMS devices when subjected to the shock, vibration, temperature extremes, and radiation of the space environment is necessary to facilitate integration into space systems. This paper will explore the effects of different environmental stresses, operational life cycling, temperature, mechanical shock, and vibration on the first commercially available RF MEMS switches to identify relevant failure modes and mechanisms inherent to these device and packaging schemes for space applications. This paper will also describe RF MEMS Switch technology under development at NASA GSFC.

Jah, Muzar↗
NASA NTRS1991

MMIC linear-phase and digital modulators for deep space spacecraft X-band transponder applications

The design concepts, analyses, and development of GaAs monolithic microwave integrated circuit (MMIC) linear-phase and digital modulators for the next generation of space-borne communications systems are summarized. The design approach uses a compact lumped element quadrature hybrid and Metal Semiconductor Field Effect Transistors (MESFET)-varactors to provide low loss and well-controlled phase performance for deep space transponder (DST) applications. The measured results of the MESFET-diode show a capacitance range of 2:1 under reverse bias, and a Q of 38 at 10 GHz. Three cascaded sections of hybrid-coupled reflection phase shifters were modeled and simulations performed to provide an X-band (8415 +/- 50 MHz) DST phase modulator with +/- 2.5 radians of peak phase deviation. The modulator will accommodate downlink signal modulation with composite telemetry and ranging data, with a deviation linearity tolerance of +/- 8 percent and insertion loss of less than 8 +/- 0.5 dB. The MMIC digital modulator is designed to provide greater than 10 Mb/s of bi-phase modulation at X-band.

Mysoor, Narayan R.↗
NASA NTRS1997

High-Temperature Superconducting/Ferroelectric Structures for Tunable Microwave Components

At the NASA Lewis Research Center, ferroelectric films, such as SrTiO3 and Ba(x)Sr(1-x)TiO3, are being used in conjunction with YBa2Cu3O(7-delta) high-temperature superconducting (HTS) thin films to fabricate tunable microwave components, such as filters, varactors, and local oscillators. These structures capitalize on the variation of the dielectric constant of the ferroelectric film upon the application of a dc electric field as well as on the low microwave losses exhibited by the high-temperature superconducting films relative to their conventional conductor counterparts. (For example, the surface resistance for a YBa2Cu3O(7-delta) thin film at 10 GHz and 77 K is more than two orders of magnitude lower than that of copper at the same frequency and temperature.) SrTiO3 and Ba(x)Sr(1-x)TiO3 films are used because their crystal structure and lattice parameters are similar to those of YBa2Cu3O(7-delta), thus enabling the growth of highly textured YBa2Cu3O(7-delta) films with high critical current densities on the underlying ferroelectric film, or alternatively, of highly textured ferroelectric film on the underlying YBa2Cu3O(7-delta) film. Our efforts have been concentrated so far in determining the deposition parameters required for optimal ferroelectric thin-film growth (i.e., maximum tunability and lowest loss) and in investigating different varactor configurations to determine which geometry is the most advantageous in terms of tunability, losses, and required bias for a given communication application. For example, we have observed that for optimized SrTiO3 films in a parallel plate capacitor, tunabilities of up to 47 percent and dissipation losses (tan d) of 0.05 are attainable at 1 MHz , 80 K, and within the 0- to 5-V bias range. In contrast, for an interdigital configuration, tunabilities of up to 70 percent and tan d ranging from 0.015 to 0.001 (depending on bias) have been observed at 1 MHz and 77 K within the 0- to 100-V bias range. Efforts are underway to use these results in developing tunable receiver front-end preselect filters as well as in low-phase noise, tunable local oscillators for K-band applications. These components represent a hitherto unavailable technology to meet the stringent performance requirements of foreseeable satellite and wireless communication systems (e.g., bandwidth, in-band insertion losses, out-of-band rejection, and noise, amongst others) in a more advantageous fashion than with currently available technology (e.g., dielectric-filled cavity and waveguide filters, and dielectric resonator oscillators). Prototypes of high-temperature superconducting/ferroelectric tunable components such as a low-phase noise K-band local oscillator, a preselect C-band filter, and a low-loss K-band phase shifter are under development at NASA Lewis.

Miranda, Felix A.↗
NASA NTRS1992

Fast optical switch having reduced light loss

An electrically controlled optical switch uses an electro-optic crystal of the type having at least one set of fast and slow optical axes. The crystal exhibits electric field induced birefringence such that a plane of polarization oriented along a first direction of a light beam passing through the crystal may be switched to a plane of polarization oriented along a second direction. A beam splitting polarizer means is disposed at one end of the crystal and directs a light beam passing through the crystal whose plane of polarization is oriented along the first direction differently from a light beam having a plane of polarization oriented along the second direction. The electro-optic crystal may be chosen from the crystal classes 43m, 42m, and 23. In a preferred embodiment, the electro-optic crystal is a bismuth germanium oxide crystal or a bismuth silicon oxide crystal. In another embodiment of the invention, polarization control optics are provided which transmit substantially all of the incident light to the electro-optic crystal, substantially reducing the insertion loss of the switch.

Nelson, Bruce N.↗
DOE OSTI2020

Preliminary design overview and performance assessment of the ITER low-field side reflectometer

The design of the ITER low-field side reflectometer (LFSR) has matured to a complete end-to-end preliminary design. LFSR will supply three key plasma measurements: (1) electron density profile, (2) electron density fluctuations, and (3) poloidal rotation. Simultaneous measurements of the three quantities are enabled by an array of six monostatic antennas which inject from an equatorial port on the outboard side of the ITER vessel. Low-loss transmission lines, consisting of corrugated, overmoded waveguide and miter bends, transmit the 30–165 GHz, O- and X-mode signals to and from the ITER plasma. Integrated transmission-line components serve a range of purposes, such as protection from high-power stray radiofrequency radiation, accommodation of transmission-line displacement, and simultaneous measurement of reference and plasma phases during the discharge. Broadband transmission signals are realized by full-band microwave transceivers combined with quasi-optical multiplexing. A field-programmable gate array (FPGA) processor demodulates the profile reflectometer signals, enabling real-time density profile measurements for plasma control system feedback. A full-scale transmission line test facility provides an integrated environment to assess the performance of critical LFSR components. Theoretical modeling together with insertion loss measurements provide the basis for a comprehensive power budget, which accounts for transmitted output power, transmission-line losses, antenna coupling, and plasma effects. Results indicate that high signal-to-noise ratios are achievable with the current design. A synthetic reflectometer model, using real design parameters and baseline ITER profiles, has been developed to estimate the return signal. With evolving microwave and data acquisition technologies, full-band, ultrafast sweeps (<1 μs) will be realizable for ITER.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Fiber loop quantum buffer for photonic qubits

Abstract We report a fiber loop quantum buffer based on a low-loss 2 × 2 switch and a unit delay made of a fiber delay line. We characterize the device by using a two-photon polarization entangled state in which one photon of the entangled photon pair is stored and retrieved at a repetition rate up to 78 kHz. The device, which enables integer multiples of a unit delay, can store the qubit state in a unit of fiber delay line up to 5.4 km and the number of loop round-trips up to 3. Furthermore, we configure the device with other active elements to realize integer multiplier and divider of a unit delay of a qubit. The quantum state tomography is performed on the retrieved photon and its entangled photon. We obtain a state fidelity > 94 % with a maximum storage time of 52 s with an insertion loss of 5.56 dB. To further characterize the storing and retrieving processes of the device, we perform entanglement-assisted quantum process tomography on the buffered qubit state. The process fidelity of the device is > 0.98. Our result implies that the device preserves the superposition and entanglement of a qubit state from a two-photon polarization-entangled state. This is a significant step towards facilitating applications in optical asynchronous transfer mode based quantum networks.

Fook Lee, Kim (ORCID:0000000290901640)↗
NASA NTRS2002

Low-Loss, High-Isolation Microwave Microelectromechanical Systems (MEMS) Switches Being Developed

Switches, electrical components that either permit or prevent the flow of electricity, are the most important and widely used electrical devices in integrated circuits. In microwave systems, switches are required for switching between the transmitter and receiver; in communication systems, they are needed for phase shifters in phased-array antennas, for radar and communication systems, and for the new class of digital or software definable radios. Ideally, switches would be lossless devices that did not depend on the electrical signal's frequency or power, and they would not consume electrical power to change from OFF to ON or to maintain one of these two states. Reality is quite different, especially at microwave frequencies. Typical switches in microwave integrated circuits are pin diodes or gallium arsenide (GaAs) field-effect transistors that are nonlinear, with characteristics that depend on the power of the signal. In addition, they are frequency-dependent, lossy, and require electrical power to maintain a certain state. A new type of component has been developed that overcomes most of these technical difficulties. Microelectromechanical (MEMS) switches rely on mechanical movement as a response to an applied electrical force to either transmit or reflect electrical signal power. The NASA Glenn Research Center has been actively developing MEMS for microwave applications for over the last 5 years. Complete fabrication procedures have been developed so that the moving parts of the switch can be released with near 100-percent yield. Moreover, the switches fabricated at Glenn have demonstrated state-of-the-art performance. A typical MEMS switch is shown. The switch extends over the signal and ground lines of a finite ground coplanar waveguide, a commonly used microwave transmission line. In the state shown, the switch is in the UP state and all the microwave power traveling along the transmission line proceeds unimpeded. When a potential difference is applied between the cantilever and the transmission line, the cantilever is pulled downward until it connects the signal line to the ground planes, creating a short circuit. In this state, all the microwave power is reflected. The graph shows the measured performance of the switch, which has less than 0.1 dB of insertion loss and greater than 30dB of isolation. These switches consume negligible electrical power and are extremely linear. Additional research is required to address reliability and to increase the switching speed.

Ponchak, George E.↗
NASA NTRS2006

Tunable Filter Made From Three Coupled WGM Resonators

A tunable third-order band-pass optical filter has been constructed as an assembly of three coupled, tunable, whispering-gallery-mode resonators similar to the one described in Whispering-Gallery-Mode Tunable Narrow-Band-Pass Filter (NPO-30896), NASA Tech Briefs, Vol. 28, No. 4 (April 2004), page 5a. This filter offers a combination of four characteristics that are desirable for potential applications in photonics: (1) wide real-time tunability accompanied by a high-order filter function, (2) narrowness of the passband, (3) relatively low loss between input and output coupling optical fibers, and (4) a sparse spectrum. In contrast, prior tunable band-pass optical filters have exhibited, at most, two of these four characteristics. As described in several prior NASA Tech Briefs articles, a whispering-gallery-mode (WGM) resonator is a spheroidal, disklike, or toroidal body made of a highly transparent material. It is so named because it is designed to exploit whispering-gallery electromagnetic modes, which are waveguide modes that propagate circumferentially and are concentrated in a narrow toroidal region centered on the equatorial plane and located near the outermost edge. Figure 1 depicts the optical layout of the present filter comprising an assembly of three coupled, tunable WGM resonators. Each WGM resonator is made from a disk of Z-cut LiNbO3 of 3.3-mm diameter and 50-m thickness. The perimeter of the disk is polished and rounded to a radius of curvature of 40 microns. The free spectral range of each WGM resonator is about 13.3 GHz. Gold coats on the flat faces of the disk serve as electrodes for exploiting the electro-optical effect in LiNbO3 for tuning. There is no metal coat on the rounded perimeter region, where the whispering-gallery modes propagate. Light is coupled from an input optical fiber into the whispering-gallery-modes of the first WGM resonator by means of a diamond prism. Another diamond prism is used to couple light from the whispering-gallery-modes of the third WGM resonator to an output optical fiber. The filter operates at a nominal wavelength of 1,550 nm and can be tuned over a frequency range of plus or minus 12 GHz by applying a potential in the range of plus or minus 150 V to the electrodes. The insertion loss (the loss between the input and output coupling optical fibers) was found to be repeatable at 6 dB. The resonance quality factor (Q) of the main sequence of resonator modes was found to be 5 x 10(exp 6), which corresponds to a bandwidth of 30 MHz. The filter can be shifted from one operating frequency to another within a tuning time less than or equal to 30 micro seconds. The transmission curve of the filter at frequencies near the middle of the passband closely approximates a theoretical third-order Butterworth filter profile, as shown in Figure 2.

Savchenkov, Anatoliy↗
DOE OSTI2021

Integrated Silicon Fourier Transform Spectrometer with Broad Bandwidth and Ultra‐High Resolution

An ultra-high resolution Fourier transform spectrometer (FTS) realized in silicon photonic platform that can operate with broad band, narrow band as well as a combination of broad band and narrow band signals is reported. The ultra-high resolution of the spectrometer is achieved by exploiting multiple techniques: a Michelson interferometer (MI) structure to increase the optical path delay (OPD), a hybrid waveguide design to reduce insertion loss, an optimized heater and air trenches to achieve higher thermal efficiency. Here, to further increase the OPD of the spectrometer to increase its resolution, a novel multiple interferometers approach is employed which combines balanced MI with N statically imbalanced MIs, thereby increasing the OPD of a single MI by factor of N + 1. An FTS spectrometer consisting of N = 2 such MIs is fabricated and experimentally characterized using unknown broad bandwidth input signal spectra of about 180 nm centered around 1550 nm, a narrow line laser input signal, and a combination of broad and narrow band signals demonstrating spectral resolution of about 0.16 nm.

Li, Ang↗
DOE OSTI2026

Self-aligned heterogeneous quantum photonic integration

Integrated quantum photonics holds significant promise for scalable photonic quantum information processing, quantum repeaters, and quantum networks, but its development is hindered by the mismatch between materials hosting high-quality quantum emitters and those compatible with mature photonic technologies. Heterogeneous integration offers a potential solution to this challenge, yet practical implementations have been limited by inevitable insertion losses at material interfaces. Here, we present a self-aligned heterogeneous quantum photonic integration approach that enables near-unity coupling efficiency at the interface. To showcase our approach, we demonstrate Purcell enhancement of a silicon vacancy (SiV) center in diamond induced by a heterogeneous photonic crystal cavity defined by titanium dioxide (TiO 2 ), as well as optical spin control and readout via a TiO 2 photonic circuit. We further show that, when combined with inverse photonic design, our approach enables efficient and broadband collection of single photons from a color center into a heterogeneous waveguide. Our approach is not restricted to SiV centers or TiO 2 ; it has the potential to be broadly applied to integrate diverse solid-state quantum emitters with thin-film photonic devices where conformal deposition is possible. Together, these results establish a practical route to scalable quantum photonic integrated circuits that combine high-quality quantum emitters with technologically mature photonic platforms.

36 MATERIALS SCIENCE↗
DOE OSTI2022

110 GHz, 110 mW hybrid silicon-lithium niobate Mach-Zehnder modulator

High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film lithium niobate (LN) Mach-Zehnder modulator (MZM) which can handle high optical power of 110 mW, while having 3-dB bandwidth greater than 110 GHz at 1550 nm. The design does not require etching of thin-film LN, and uses hybrid optical modes formed by bonding LN to planarized silicon photonic waveguide circuits. A high optical power handling capability in the MZM was achieved by carefully tapering the underlying Si waveguide to reduce the impact of optically-generated carriers, while retaining a high modulation efficiency. The MZM has a $V_πL$ product of 3.1 V.cm and an on-chip optical insertion loss of 1.8 dB.

42 ENGINEERING↗