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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1971

Buckling analysis for axially compressed flat plates, structural sections, and stiffened plates reinforced with laminated composites

A classical buckling analysis is developed for stiffened, flat plates composed of a series of linked plate and beam elements. Plates are idealized as multilayered orthotropic elements. Structural beads and lips are idealized as beams. The loaded edges of the stiffened plate are simply-supported and the conditions at the unloaded edges can be prescribed arbitrarily. The plate and beam elements are matched along their common junctions for displacement continuity and force equilibrium in an exact manner. Offsets between elements are considered in the analysis. Buckling under uniaxial compressive load for plates, sections, and stiffened plates is investigated. Buckling loads are the lowest of all possible general and local failure modes, and the mode shape is used to determine whether buckling is a local or general instability. Numerical correlations with existing analysis and test data for plates, sections, and stiffened plates including boron-reinforced structures are discussed. In general correlations are reasonably good.

Viswanathan, A. V.↗
NASA NTRS1972

Buckling analysis for structural sections and stiffened plates reinforced with laminated composites.

A classical buckling analysis is developed for stiffened, flat plates composed of a series of linked flat plate and beam elements. Plates are idealized as multilayered orthotropic elements; structural beads and lips are idealized as beams. The loaded edges of the stiffened plate are simply supported and the conditions at the unloaded edges can be prescribed arbitrarily. The plate and beam elements are matched along their common junctions for displacement continuity and force equilibrium in an exact manner. Offsets between elements are considered in the analysis. Buckling under uniaxial compressive load for plates, sections and stiffened plates is investigated. Buckling loads are found as the lowest of all possible general and local failure modes and the mode shape is used to determine whether buckling is a local or general instability. Numerical correlations with existing analysis and test data for plates, sections and stiffened plates including boron-reinforced structures are discussed. In general, correlations are reasonably good.

Viswanathan, A. V.↗
NASA NTRS2004

The Environmental Performance at Low Intensity, Low Temperature (LILT) of High Efficiency Triple Junction Solar Cells

A number of JPL missions, either active or in the p l d g stages, require the accurate LILT flew intensity - low temperate) climate of triple-junction solar. Although triple ignition LILT performance was reported as recently as 2002, there has been an evolutionary advance in cell technology by both U.S. space cell manufacturers that, for mission design purposes, effectively obsoletes the earlier data. As a result, JPL initiated a program to develop a database for the LILT performance of the new high performance triple junction solar cells. JPL obtained Emcore Advanced triple Juntion CIC assemblies and Spectrolab Ultra Triple Junction CIC assemblies. These cells were tested at temperature-intensity ranges designed to cover applications between 1 and 5.18 AU solar distances. 1 MeV electron irradiation from 25 E14 to 1 El5 w were performed on the cells to evaluate the combined effect of particulate radiation and LILT conditions. The effect of LILT conditions was observed to incur an increase in the variation of cell performances such that at simulted 5.18 AU conditions the average performance was approximately 30% with the best cells measuring between 32 and 34% efficiency. The 30% average efficiency compares with approximately 25% average efficiency measured on earlier technology triple junction solar cells.

triple junction↗
NASA NTRS1986

Room temperature deposition of superconducting NbN for superconductor-insulator-superconductor junctions

The deposition of stoichiometric B1-crystal-structure (111) NbN films on glass or sapphire substrates by reactive dc magnetron sputtering is reported. High-purity Ar-N2 mixtures are used in the apparatus described by Thakoor et al. (1985), and typical deposition parameters are given as background pressure about 10 ntorr, voltage -325 V, current 1 A, deposition rate 1.35 nm/s, film thickness 500 nm, P(Ar) 5-17 mtorr, initial P(N2) 2-6 mtorr, and room temperature. The N2 consumption-injection characteristics are studied and found to control NbN formation using well-conditioned Nb targets. Films with transition temperatures 15-16 K are obtained at P(Ar) = 12.9 + or - 0.2 mtorr and P(N2) = 3.7 + or - 0.1 mtorr. SIS junctions of area about 0.001 sq cm fabricated using the NbN films are shown to have I-V characteristics with nonlinearity parameter about 110 and NbN superconducting-gap parameter Delta = about 2.8 meV.

Thakoor, S.↗
NASA NTRS1978

Swept group delay measurement

Direct recording of group delay measurements on a system under temperature and stress tests employs modulated carrier frequency sweep over an S or X band. Reference path and test paths to separate detectors utilize a power divider e.g., a directional coupler or a hybrid T junction. An initially balanced phase comparator is swept in frequency by modulated carrier over the band of interest for different conditions of temperature and/or mechanical stress to obtain characteristic group delay curves.

Trowbridge, D. L.↗
NASA NTRS1986

Toward a systematic design theory for silicon solar cells using optimization techniques

This work is a first detailed attempt to systematize the design of silicon solar cells. Design principles follow from three theorems. Although the results hold only under low injection conditions in base and emitter regions, they hold for arbitrary doping profiles and include the effects of drift fields, high/low junctions and heavy doping concentrations of donor or acceptor atoms. Several optimal designs are derived from the theorems, one of which involves a three-dimensional morphology in the emitter region. The theorems are derived from a nonlinear differential equation of the Riccati form, the dependent variable of which is a normalized recombination particle current.

Misiakos, K.↗
NASA NTRS2011

Thin film ceramic thermocouples

A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

Gregory, Otto↗
NASA NTRS1986

Characterization of the heavily doped emitter and junction regions of silicon solar cells using an electron beam

Heavily doped emitter and junction regions of silicon solar cells are investigated by means of the electron-beam-induced-current (EBIC) technique. Although the experimental EBIC data are collected under three-dimensional conditions, it is analytically demonstrated with two numerical examples that the solutions obtained with one-dimensional numerical modeling are adequate. EBIC data for bare and oxide-covered emitter surfaces are compared with theory. The improvement in collection efficiency when an emitter surface is covered with a 100-A SiO2 film varies with beam energy; for a cell with a junction depth of 0.35 microns, the improvement is about 54 percent at 2 keV.

Luke, K. L.↗
NASA NTRS2007

Recovery of Electron/Proton Radiation-Induced Defects in n+p AlInGaP Solar Cell by Minority-Carrier Injection Annealing

A high efficient In0.48Ga0.52P/In0.01Ga0.99As/Ge triple junction solar cell has been developed for application in space and terrestrial concentrator PV system [1-3]. Recently, a high conversion efficiency of 31.5% (AM1.5G) has been obtained in InGaP/(In)GaAs/Ge triple junction solar cell, and as a new top cell material of triple junction cells, (Al)InGaP [1] has been proposed to improve the open-circuit voltage (Voc) because it shows a higher Voc of 1.5V while maintaining the same short-circuit current (ISC) as a conventional InGaP top cell under AM1.5G conditions as seen in figure 1 (a). Moreover, the spectral response of 1.96eV AlInGaP cell with a thickness of 2.5..m shows a higher response in the long wavelength region, compared with that of 1.87eV InGaP cell with 0.6..m thickness, as shown in figure 1 (b). Its development will realize next generation multijunction (MJ) solar cells such as a lattice mismatched AlInGaP/InGaAs/Ge 3-junction and lattice matched AlInGaP/GaAs/InGaAsN/Ge 4-junction solar cells. Figure 2 shows the super high-efficiency MJ solar cell structures and wide band spectral response by MJ solar cells under AM1.5G conditions. For realizing high efficient MJ space solar cells, the higher radiation-resistance under the electron or proton irradiation is required. The irradiation studies for a conventional top cell InGaP have been widely done [4-6], but little irradiation work has been performed on AlInGaP solar cells. Recently, we made the first reports of 1 MeV electron or 30 keV proton irradiation effects on AlInGaP solar cells, and evaluated the defects generated by the irradiation [7,8]. The present study describes the recovery of 1 MeV electron / 30 keV proton irradiation-induced defects in n+p- AlInGaP solar cells by minority-carrier injection enhanced annealing or isochronal annealing. The origins of irradiation-induced defects observed by deep level transient spectroscopy (DLTS) measurements are discussed.

Lee, H. S.↗
NASA NTRS2012

Alumina Based 500 C Electronic Packaging Systems and Future Development

NASA space and aeronautical missions for probing the inner solar planets as well as for in situ monitoring and control of next-generation aeronautical engines require high-temperature environment operable sensors and electronics. A 96% aluminum oxide and Au thick-film metallization based packaging system including chip-level packages, printed circuit board, and edge-connector is in development for high temperature SiC electronics. An electronic packaging system based on this material system was successfully tested and demonstrated with SiC electronics at 500 C for over 10,000 hours in laboratory conditions previously. In addition to the tests in laboratory environments, this packaging system has more recently been tested with a SiC junction field effect transistor (JFET) on low earth orbit through the NASA Materials on the International Space Station Experiment 7 (MISSE7). A SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE7 suite to International Space Station via a Shuttle mission and tested on the orbit for eighteen months. A summary of results of tests in both laboratory and space environments will be presented. The future development of alumina based high temperature packaging using co-fired material systems for improved performance at high temperature and more feasible mass production will also be discussed.

Chen, Liang-Yu↗
NASA NTRS1974

Surface-state spectra from thick-oxide MOS tunnel junctions

The conductance and capacitance of thick-oxide MOS tunnel junctions (SiO2 thickness 40 to 65 A) have been measured from 35 Hz to 210 kHz. It is demonstrated that the use of a thick-oxide MOS tunnel junction makes it possible to obtain the surface-state data throughout the whole silicon band gap with better resolution and better sensitivity than the conventional MOS capacitance techniques. A slight departure from equilibrium may occur in the voltage range where large tunnel current flows. Corrections to the energy scale must be made in this voltage range. A method for the evaluation of the junction quality is discussed. The simplified equivalent circuits necessary for the calculation of surface-state data are constructed under various bias conditions by an approach different from that used in a previously published work. The present work supports the model that at least some of the observed surface states are a consequence of the diffusion of contact metals into the oxide.

Ma, T. P.↗
NASA NTRS1979

HCMM: Soil moisture in relation to geologic structure and lithology, northern California

The author has identified the following significant results. First-look qualitative geologic evaluation of day- and night-IR images discloses several en echelon linear features extending throughout the central part of the northern coast range in California, across the Mendocino triple junction and into southern Oregon. Preliminary examination of these features with respect to topographic expression, vegetation, sun angle and azimuth, and atmospheric conditions suggests that they may be related to the intracontinental plate boundary (Lake Mountain Fault zone of Herd) of the Humbolt Plate. The linear features, which cut across several climatic zones and differently vegetated regions are not confined to topographic valleys, but cross the ridges and valleys at varying angles. Lithology within the Great Valley Sequence can be detected on a few of the images; however, preliminary evaluation suggests that the thermal banding observed may be a function of sun azimuth or late-day sun angle. Soil moisture, related to lithologic composition cannot be ruled out at this time.

Rich, E. I.↗
NASA NTRS1974

A theoretical analysis of the current-voltage characteristics of solar cells

The current-voltage characteristics and efficiencies of solar cells are discussed. For one solar cell structure detailed curves are presented which include carrier densities, current densities, potential, and quasi-Fermi levels at different voltage levels both with and without optically generated carriers (AMO conditions). In addition some results are presented concerning the influence of various parameter variations such as lifetime, cell thickness, and high-low junction width on solar cell performance.

Hauser, J. R.↗
NASA NTRS1972

AC impedance of silicon solar cells.

The equivalent source impedance of a solar array is an important parameter in the design and analysis of solar array power conditioning equipment. Laboratory impedance tests have been performed on individual silicon solar cells and the test results have been correlated with P-N junction theory as developed by Shockley. The impedance has been broken into resistive and reactive components. The impedance has been expressed as a function of DC operating point and frequency. A practical application of the individual cell characteristics is presented in a solar array simulator design.

Zerbel, D. W.↗
NASA NTRS1990

Critical point wetting drop tower experiment

The 100 m Drop Tower at NASA-Marshall was used to provide the step change in acceleration from 1.0 to 0.0005 g. An inter-fluid meniscus oscillates vertically within a cylindrical container when suddenly released from earth's gravity and taken into a microgravity environment. Oscillations damp out from energy dissipative mechanisms such as viscosity and interfacial friction. Damping of the oscillations by the later mechanism is affected by the nature of the interfacial junction between the fluid-fluid interface and the container wall. In earlier stages of the project, the meniscus shape which developed during microgravity conditions was applied to evaluations of wetting phenomena near the critical temperature. Variations in equilibrium contact angle against the container wall were expected to occur under critical wetting conditions. However, it became apparent that the meaningful phenomenon was the damping of interfacial oscillations. This latter concept makes up the bulk of this report. Perfluoromethyl cyclohexane and isopropanol in glass were the materials used for the experiment. The wetting condition of the fluids against the wall changes at the critical wetting transition temperature. This change in wetting causes a change in the damping characteristics of the interfacial excursions during oscillation and no measurable change in contact angle. The effect of contact line friction measured above and below the wetting transition temperature was to increase the period of vertical oscillation for the vapor-liquid interface when below the wetting transition temperature.

Kaukler, William F.↗
NASA NTRS1991

Development of silicon carbide semiconductor devices for high temperature applications

The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology.

Matus, Lawrence G.↗
NASA NTRS2007

Lightweight, Flexible Solar Cells on Stainless Steel Foil and Polymer for Space and Stratospheric Applications

The availability of low-cost, lightweight and reliable photovoltaic (PV) modules is an important component in reducing the cost of satellites and spacecraft. In addition, future high-power spacecraft will require lightweight PV arrays with reduced stowage volume. In terms of the requirements for low mass, reduced stowage volume, and the harsh space environment, thin film amorphous silicon (a-Si) alloy cells have several advantages over other material technologies (1). The deposition process is relatively simple, inexpensive, and applicable to large area, lightweight, flexible substrates. The temperature coefficient has been found to be between -0.2 and -0.3 %/degC for high-efficiency triple-junction a-Si alloy cells, which is superior for high temperature operation compared to crystalline Si and triple-junction GaAs/InGaP/Ge devices at 0.53 %/degC and 0.45 %/degC, respectively (2). As a result, the reduction in efficiency at high temperature typical in space conditions is less for a-Si alloy cells than for their crystalline counterparts. Additionally, the a-Si alloy cells are relatively insensitive to electron and proton bombardment. We have shown that defects that are created by electrons with energies between 0.2 to 2 MeV with fluence up to 1x10(exp 15) e/sq cm and by protons with energy in the range 0.3 MeV to 5 MeV with fluence up to 1x10(exp 13) p/sq cm can be annealed out at 70 C in less than 50 hours (1). Further, modules incorporating United Solar s a-Si alloy cells have been tested on the MIR space station for 19 months with only minimal degradation (3). For stratospheric applications, such as the high altitude airship, the required PV arrays are typically of considerably higher power than current space arrays. Airships typically have a large area available for the PV, but weight is of critical importance. As a result, low cost and high specific power (W/kg) are key factors for airship PV arrays. Again, thin-film a-Si alloy solar cell technology is well suited to such applications.

Beernink, Kevin↗
NASA NTRS1988

Fluid oscillation in the Drop Tower

An interfluid meniscus oscillates within a cylindrical container when suddenly released from earth's gravity and taken into a microgravity environment. Oscillations damp out from energy dissipative mechanisms such as viscosity and interfacial friction. Damping out of the oscillations by the latter mechanism is affected by the nature of the interfacial junction between the fluid-fluid interface and the container wall. Perfluoromethylcyclohexane and isopropanol in glass were the materials used for the experiment. The wetting condition of the fluids against the wall changes at the critical wetting transition temperature. This change in wetting causes a change in the damping characteristics.

Kaukler, William F.↗