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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS2006

Results from an International Measurement Round Robin of III-V Triple Junction Solar Cells under Air Mass Zero

This paper reports the results of an international measurement round robin of monolithic, triple-junction, GaInP/GaAs/Ge space solar cells. Eight laboratories representing national labs, solar cell vendors and space solar cell consumers, measured cells using in-house reference cells and compared those results to measurements made where each lab used the same set of reference cells. The results show that most of the discrepancy between laboratories is likely due to the quality of the standard cells rather than the measurement system or solar simulator used.

Jenkins, Phillip↗
NASA NTRS1985

Evaluation of the Radiometric Quality of the TM Data Using Clustering, Linear Transformations and Multispectral Distance Measures

The radiometric quality of LANDSAT 4 TM data for the classification and identification of Earth surface features was evaluated. Techniques employed in the evaluation included clustering, data compression (linear transformations), multispectral distance measures, and hierarchical classification methods. TM and MSS data for the Chicago, Illinois test site were studied. In order to determine the radiometric quality of the TM thermal data for temperature mapping of surface water, a test site was selected within the area covered by the TM scene (Scene ID: 40101-16025) gathered over Illinois. This site was chosen because it includes a surface water body with a large range of temperatures, i.e., a cooling pond for the Dresden nuclear power plant and the junction of two rivers.

Bartolucci, L. A.↗
NASA NTRS1975

Dip coating process: Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

The research program to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by dip-coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon is reported. The initial effort concentrated on the design and construction of the experimental dip-coating facility. The design was completed and its experimental features are discussed. Current status of the program is reported, including progress toward solar cell junction diffusion and miscellaneous ceramic substrate procurement.

Heaps, J. D.↗
NASA NTRS1973

Methods of measurement for semiconductor materials, process control, and devices

This progress report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Significant accomplishments during this reporting period include design of a plan to provide standard silicon wafers for four-probe resistivity measurements for the industry, publication of a summary report on the photoconductive decay method for measuring carrier lifetime, publication of a comprehensive review of the field of wire bond fabrication and testing, and successful completion of organizational activity leading to the establishment of a new group on quality and hardness assurance in ASTM Committee F-1 on Electronics. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers in silicon; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.

Bullis, W. M.↗
NASA NTRS2005

High Quality GaAs Growth by MBE on Si Using GeSi Buffers and Prospects for Space Photovoltaics

III-V solar cells on Si substrates are of interest for space photovoltaics since this would combine high performance space cells with a strong, lightweight and inexpensive substrate. However, the primary obstacles blocking III-V/Si cells from achieving high performance to date have been fundamental materials incompatabilities, namely the 4% lattice mismatch between GaAs and Si, and the large mismatch in thermal expansion coefficient. In this paper, we report on the molecular beam epitaxial (MBE) growth and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi Intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si. Ga As cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 10 (exp 6) per square centimeter, identical to the underlying relaxed Ge cap of the graded buffer, via a combination of transmission electron microscopy, electron beam induced current, and etch pit density measurements. AlGaAs/GaAs double heterostructures wre grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si. A series of growth were performed to ass3ss the impact of a GaAs buffer to a thickness of only 0.1 micrometer. Secondary ion mass spectroscopy studies revealed that there is negligible cross diffusion of Ga, As and Ge at he III-V/Ge interface, identical to our earlier findings for GaAs grown on Ge wafers using MBE. This indicates that there is no need for a buffer to "bury" regions of high autodopjing,a nd that either pn or np configuration cells are easily accomodated by these substrates. Preliminary diodes and single junction Al Ga As heteroface cells were grown and fabricated on the Ge/GeSi/Si substrates for the first time. Diodes fabricated on GaAs, Ge and Ge/GeSi/Si substrate show nearly identical I-V characteristics in both forward and reverse bias regions. External quantum efficiencies of AlGaAs/GaAs cell structures grown on Ge/GeSi/Si and Ge substrates demonstrated nearly identical photoresponse, which indicates that high lifetimes, diffusion lengths and efficient minority carrier collection is maintained after complete cell processing.

Carlin, J. A.↗
NASA NTRS1980

Experimental and theoretical investigations of the quality factor for N/+/P silicon solar cells

Many N(+)P silicon solar cells made with silicon from different growth techniques have current-voltage relations of the form: I = I(0) (exp(qV/AkT) - 1), where the quality factor A is nonintegral, is greater than 1, and shows a temperature dependence. The dark forward characteristics of such cells have been measured over a range of temperatures and the behavior of the factor A derived from them. Lack of agreement with previous models has led to the development of a new model, in which N(+) conduction electrons tunnel to deep levels near that side, these levels being due to junction contamination by impurities. Electron recombination then occurs with holes thermally assisted into the junction from the P side. This mechanism involves increased I(0) values over those for diffusion diode processes and thus reduces the cell power conversion efficiency.

Garlick, G. F. J.↗
NASA NTRS2005

The Space Technology 5 Power System Design

The Space Technology 5 (ST5) mission is a NASA New Millennium Program (NMP) project that was developed to validate new technologies for future missions and to demonstrate the feasibility of building and launching multiple, miniature spacecraft that can operate as science probes, collecting research quality measurements. The three satellites in the ST5 constellation will be launched into a sun synchronous LEO (Low Earth Orbit) in early 2006. ST5 fits in the 25 kilogram and 24 Watt class of miniature but fully capable spacecraft. The power system design features the use of new technology components and a low voltage power bus. In order to hold the mass and volume low and to qualify new technologies for future use in space, high efficiency triple junction solar cells and a lithium ion battery were baselined into the design. The Power System Electronics (PSE) was designed for a high radiation environment and uses hybrid microcircuits for power switching and over current protection. The ST5 power system architecture and technologies will be presented.

Stewart, Karen D.↗
NASA NTRS1987

Recent developments in water quality monitoring for Space Station reclaimed wastewaters

This paper discusses the recent developments in water quality monitoring for Space Station reclaimed wastewaters. A preprototype unit that contains an ultraviolet absorbance organic carbon monitor integrated with pH and conductivity sensors is presented. The preprototype has provisions for automated operation and is a reagentless flow-through system without any gas/liquid interfaces. The organic carbon monitor detects by utraviolet absorbance the organic impurities in reclaimed wastewater which may be correlated to the organic carbon content of the water. A comparison of the preprototype organic carbon detection values with actual total organic carbon measurements is presented. The electrolyte double junction concept for the pH sensor and fixed electrodes for both the pH and conductivity sensors are discussed. In addition, the development of a reagentless organic carbon analyzer that incorporates ultraviolet oxidation and infrared detection is presented. Detection sensitivities, hardware development, and operation are included.

Small, John W.↗
NASA NTRS1991

Material properties and device evaluations of ECR-deposited a-Si:H and a-SiC:H films

Device-quality a-Si:H and a-SiC:H films have been deposited using electron cyclotron resonance (ECR) microwave plasmas of SiH4, CH4, and H2 mixtures. Typical material properties of ECR-deposited, photosensitive a-Si:H films are: (1) high photosensitivity up to 2 x 106 with a photoconductivity of 10 exp -5 to 10 exp -4/(Ohm-cm), (2) a Tauc gap of 1.75 to 1.85 eV, (3) an Urbach slope of 50-60 meV determined by the constant photocurrent method, and (4) an integrated defect density of 1-2 x 10 exp 16/cu cm determined by junction capacitance measurements. Highly conductive, p-type a-SiC:H films have been produced by ECR plasmas with a conductivity of 0.2/(Ohm-cm).

Shing, Y. H.↗
NASA NTRS2005

III-V Compound Detectors for CO2 DIAL Measurements

Profiling of atmospheric carbon dioxide (CO2) is important for understanding the natural carbon cycle on Earth and its influence on global warming and climate change. Differential absorption lidar is a powerful remote sensing technique used for profiling and monitoring atmospheric constituents. Recently there has been an interest to apply this technique, at the 2 m wavelength, for investigating atmospheric CO2. This drives the need for high quality detectors at this wavelength. Although 2 m detectors are commercially available, the quest for a better detector is still on. The detector performance, regarding quantum efficiency, gain and associated noise, affects the DIAL signal-to-noise ratio and background signal, thereby influencing the instrument sensitivity and dynamic range. Detectors based on the III-V based compound materials shows a strong potential for such application. In this paper the detector requirements for a long range CO2 DIAL profiles will be discussed. These requirements were compared to newly developed III-V compound infrared detectors. The performance of ternary InGaSb pn junction devices will be presented using different substrates, as well as quaternary InGaAsSb npn structure. The performance study was based on experimental characterization of the devices dark current, spectral response, gain and noise. The final results are compared to the current state-of-the-art InGaAs technology. Npn phototransistor structure showed the best performance, regarding the internal gain and therefore the device signal-to-noise ratio. 2-micrometers detectivity as high as 3.9 x 10(exp 11) cmHz(sup 1/2)/W was obtained at a temperature of -20 C and 4 V bias voltage. This corresponds to a responsivity of 2650 A/W with about 60% quantum efficiency.

Refaat, Tamer F.↗
NASA NTRS2004

The Space Technology 5 Avionics System

The Space Technology 5 (ST5) mission is a NASA New Millennium Program project that will validate new technologies for future space science missions and demonstrate the feasibility of building launching and operating multiple, miniature spacecraft that can collect research-quality in-situ science measurements. The three satellites in the ST5 constellation will be launched into a sun-synchronous Earth orbit in early 2006. ST5 fits into the 25-kilogram and 24-watt class of very small but fully capable spacecraft. The new technologies and design concepts for a compact power and command and data handling (C&DH) avionics system are presented. The 2-card ST5 avionics design incorporates new technology components while being tightly constrained in mass, power and volume. In order to hold down the mass and volume, and quali& new technologies for fUture use in space, high efficiency triple-junction solar cells and a lithium-ion battery were baselined into the power system design. The flight computer is co-located with the power system electronics in an integral spacecraft structural enclosure called the card cage assembly. The flight computer has a full set of uplink, downlink and solid-state recording capabilities, and it implements a new CMOS Ultra-Low Power Radiation Tolerant logic technology. There were a number of challenges imposed by the ST5 mission. Specifically, designing a micro-sat class spacecraft demanded that minimizing mass, volume and power dissipation would drive the overall design. The result is a very streamlined approach, while striving to maintain a high level of capability, The mission's radiation requirements, along with the low voltage DC power distribution, limited the selection of analog parts that can operate within these constraints. The challenge of qualifying new technology components for the space environment within a short development schedule was another hurdle. The mission requirements also demanded magnetic cleanliness in order to reduce the effect of stray (spacecraft-generated) magnetic fields on the science-grade magnetometer.

Speer, Dave↗
NASA NTRS1988

Producing CCD imaging sensor with flashed backside metal film

A backside illuminated CCD imaging sensor for reading out image charges from wells of the array of pixels is significantly improved for blue, UV, far UV and low energy x-ray wavelengths (1-5000.ANG.) by so overthinning the backside as to place the depletion edge at the surface and depositing a thin transparent metal film of about 10.ANG. on a native-quality oxide film of less than about 30.ANG. grown on the thinned backside. The metal is selected to have a higher work function than that of the semiconductor to so bend the energy bands (at the interface of the semiconductor material and the oxide film) as to eliminate wells that would otherwise trap minority carriers. A bias voltage may be applied to extend the frontside depletion edge to the interface of the semiconductor material with the oxide film in the event there is not sufficient thinning. This metal film (flash gate), which improves and stabilizes the quantum efficiency of a CCD imaging sensor, will also improve the QE of any p-n junction photodetector.

Janesick, James R.↗
NASA NTRS1991

CCD imaging sensor with flashed backside metal film

A backside illuminated CCD imaging sensor for reading out image charges from wells of the array of pixels is significantly improved for blue, UV, far UV and low energy x-ray wavelengths (1-5000.ANG.) by so overthinning the backside as to place the depletion edge at the surface and depositing a thin transparent metal film of about 10.ANG. on a native-quality oxide film of less than about 30.ANG. grown on the thinned backside. The metal is selected to have a higher work function than that of the semiconductor to so bend the energy bands (at the interface of the semiconductor material and the oxide film) as to eliminate wells that would otherwise trap minority carriers. A bias voltage may be applied to extend the frontside depletion edge to the interface of the semiconductor material with the oxide film in the event there is not sufficient thinning. This metal film (flash gate), which improves and stabilizes the quantum efficiency of a CCD imaging sensor, will also improve the QE of any p-n junction photodetector.

Janesick, James R.↗
NASA NTRS2004

Biodosimetry as a New Paradigm for Determination of Radiation Risks and Risk-Mitigation in Astronauts Exposed to Space Radiation

Predicting risk of cancer in astronauts exposed to space radiation is challenging partly because uncertainties of absorption of dose and the processing of dose-related damage at the cellular level degrade the confidence of predicting the expression of cancer. Cellular biodosimeters that simultaneously report: 1) the quantity of absorbed dose after exposure to ionizing radiation, 2) the quality of radiation delivering that dose, and 3) the macromolecular profiles related to malignant transformation in cells absorbing that dose would therefore be useful. An approach to such a multiparametric biodosimeter will be reported, This is the demonstration of two dose-responsive field-effects of enhanced protein-expression. In one case, expression of keratin 18 (K18) in cultures of human mammary epithelial cells (HMEC) irradiated with cesium-137 gamma-rays is enhanced following exposure of log phase cells to relatively low doses of 30 to 90 cGy. K18 has been reported by a marker for tumor staging and for apoptosis. In the second case, expression of connexin 43 (Cx43) is increased in irradiated stationary phase cultures of HMEC, indicating enhanced formation of gap junctions. Gap junctions have been reported to be involved in bystander effects following irradiation. It is a biodosimeter for assessing radiogenic damage. It is suggested further that such biomolecular dosimetry may introduce a new paradigm for assessing cancer risk and risk-mitigation in individuals, a requirement for managing radiation health in astronauts during extended missions in space. This new paradigm is built upon the statistical power provided by the use of functional genomics and proteomics represented in combined gene- and protein-expression assays.

Richmond, Robert↗
NASA NTRS1990

Bridgman crystal growth

The objective of this theoretical research effort was to improve the understanding of the growth of Pb(x)Sn(1-x)Te and especially how crystal quality could be improved utilizing the microgravity environment of space. All theoretical growths are done using the vertical Bridgman method. It is believed that improved single crystal yields can be achieved by systematically identifying and studying system parameters both theoretically and experimentally. A computational model was developed to study and eventually optimize the growth process. The model is primarily concerned with the prediction of the thermal field, although mass transfer in the melt and the state of stress in the crystal were of considerable interest. The evolution is presented of the computer simulation and some of the important results obtained. Diffusion controlled growth was first studied since it represented a relatively simple, but nontheless realistic situation. In fact, results from this analysis prompted a study of the triple junction region where the melt, crystal, and ampoule wall meet. Since microgravity applications were sought because of the low level of fluid movement, the effect of gravitational field strength on the thermal and concentration field was also of interest. A study of the strength of coriolis acceleration on the growth process during space flight was deemed necessary since it would surely produce asymmetries in the flow field if strong enough. Finally, thermosolutal convection in a steady microgravity field for thermally stable conditions and both stable and unstable solutal conditions was simulated.

Carlson, Frederick↗
NASA NTRS1994

Transient nucleate pool boiling in microgravity: Some initial results

Variable gravity provides an opportunity to test the understanding of phenomena which are considered to depend on buoyancy, such as nucleate pool boiling. The active fundamental research in nucleate boiling has sought to determine the mechanisms or physical processes responsible for its high effectiveness, manifested by the high heat flux levels possible with relatively low temperature differences. Earlier research on nucleate pool boiling at high gravity levels under steady conditions demonstrated quantitatively that the heat transfer is degraded as the buoyancy normal to the heater surfaced increases. Correspondingly, it was later shown, qualitatively for short periods of time only, that nucleate boiling heat transfer is enhanced as the buoyancy normal to the heater surface is reduced. It can be deduced that nucleate pool boiling can be sustained as a quasi-steady process provided that some means is available to remove the vapor generated from the immediate vicinity of the heater surface. One of the objectives of the research, the initial results of which are presented here, is to quantify the heat transfer associated with boiling in microgravity. Some quantitative results of nucleate pool boiling in high quality microgravity (a/g approximately 10(exp -5)) of 5s duration, obtained in an evacuated drop tower, are presented here. These experiments were conducted as precursors of longer term space experiments. A transient heating technique is used, in which the heater surface is a transparent gold film sputtered on a qua rtz substrate, simultaneously providing the mean surface temperature from resistance thermometry and viewing of the boiling process both from beneath and across the surface. The measurement of the transient mean heater surface temperature permits the computation, by numerical means, of the transient mean heat transfer coefficient. The preliminary data obtained demonstrates that a quasi-steady boiling process can occur in microgravity if the bulk liquid subcooling is sufficiently high and if the imposed heat flux is sufficiently low. This is attributed to suface tension effects at the liquid-vapor-solid junction causing rewetting to take place, sustaining the nucleate boiling. Otherwise, dryout at the heater surface will occur, as observed.

Merte, Herman, Jr.↗
NASA NTRSDate not supplied

Automatic Boundary-Layer Adaptation of Structured Grids in VULCAN-CFD

In supersonic and hypersonic flow computations, well-resolved boundary layers are essential for accurate quantification of surface heating and transition prediction, particularly via linear stability analysis. Grid design for hypersonic flows with shocks, boundary-layer separation, and/or complex mean flow features incorporating spanwise/azimuthal inhomogeneities is a difficult issue. In comparison to a manual grid adaptation procedure, an autonomous grid adaptation technique offers significant improvements in computing time and solution quality. The VULCAN-CFD solver already includes a validated procedure for automatic adaption of structured grids to the bow shock. The present focus is on implementing an automatic boundary-layer adaptation capability in VULCAN-CFD that adapts structured, multiblock grids to both the bow shock and the boundary layer at the same time. The boundary-layer adaptation algorithm allows the user to specify the number of cells within the boundary layer, along with the input parameters used for detecting the edge of the boundary layer, namely, the variable used in the edge detection criterion,the edge detection method, the detection direction, and the relaxation factor used during the morphing of the grid. The algorithm automatically distributes grid points along the wall-normal direction to achieve a smooth variation in grid spacing from the edge of the boundary layer to a"junction" location within the outer part of the grid. Illustrative results are presented for three different high-speed configurations: the two-dimensional flow over a cylinder at Mach 17.6 and unit Reynolds number of Re=0.38x10^6 m^-1, the axisymmetric flow over a cone-cylinder-flare model at Mach 6.0 and Re = 10.5×10^6 m^-1, and the three-dimensional flow over a blunt, 7-degree half-angle cone at 5-degree angle of attack in a Mach 9.79 flow with Re = 17.1×10^6 m^-1. The automated boundary-layer adaptation is shown to provide an adequate grid topology that is aligned with the bow shock in the outer part of the grid and also resolves the viscous boundary-layer region close to the surface.

boundary layer transition↗
NASA NTRS2000

p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

Das, K.↗