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At least 109 records · Page 6

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NASA NTRS1992

The development of a turbulent junction vortex system

The growth and development of a horseshoe vortex system in an incompressible, three-dimensional turbulent junction flow were investigated experimentally. A streamlined cylinder mounted with its axis normal to a flat surface was used to generate the junction vortex flow. The flow environment was characterized by a body Reynolds number of 183,000, based on the leading edge diameter of the streamlined cylinder. The study included surface flow visualizations, surface pressure measurements, and mean flow measurements of total pressure, static pressure, and velocity distributions in three planes around the base of the streamlined cylinder, and in two planes in the wake flow. Some characterizations of vortex properties based on the measured mean cross-flow velocity components are presented. The results show the presence of a single large, dominant vortex, with strong evidence of a very small corner vortex in the junction between the cylinder and the flat surface. The center of the dominant vortex drifts away from both the body and the flat surface as the flow develops along and downstream of the body. The growth and development of the core of the large, dominant vortex are documented.

Pierce, F. J.↗

NASA NTRS1993

Superconducting Al-trilayer tunnel junctions for use as X-ray detectors

Photolithographic techniques have been developed to fabricate high-quality Al-Al oxide-Al superconducting tunnel junctions for use in X-ray detectors. These devices are designed to incorporate about 1-micron-thick superconducting X-ray absorbers for the detection of less than 10-keV single photons. In an effort to increase energy resolution, superconductor bandgap engineering with lateral and vertical trapping has been used to shorten quasi-particle tunneling times and diffusion lengths and to prevent quasi-particle diffusion away from the tunnel junction. Methods that have been developed for overcoming materials imcompatibility and device degradation upon thermal cycling are reported. The authors also report on the use of a nonrectangular tunnel junction geometry which reduces the magnetic field needed to suppress the Josephson current for stable biasing. Work in progress to measure the energy resolution of these X-ray detectors at 0.35 K is also discussed.

Gaidis, M. C.↗

NASA NTRS1993

A 100 GHz Josephson mixer using resistively-shunted Nb tunnel junctions

The authors describe preliminary mixer results using resistively shunted Nb/AlO(x)/Nb tunnel junctions in a 100-GHz waveguide mixer mount. The mixer utilizes robust, lithographically defined devices which have nonhysteretic I-V curves. A receiver temperature of 390 K (DSB) has been obtained with a conversion loss of -6.5 dB. The receiver's behavior agrees qualitatively with the behavior predicted by the resistively shunted junction model. Substantial improvements in performance are expected with the use of better-optimized shunted junctions, and numerical simulations suggest that, if devices with higher ICRN (critical current-normal state resistance) products can be obtained, Josephson effect mixers could be competitive with SIS mixers at high frequencies.

Schoelkopf, R. J.↗

NASA NTRS1993

Results of some initial space qualification testing on triple junction a-Si and CuInSe2 thin film solar cells

A series of environmental tests were completed on one type of triple junction a-Si and two types of CuInSe2 thin film solar cells. The environmental tests include electron irradiation at energies of 0.7, 1.0, and 2.0 MeV, proton irradiation at energies of 0.115, 0.24, 0.3, 0.5, 1.0, and 3.0 MeV, post-irradiation annealing at temperatures between 20 C and 60 C, long term exposure to air mass zero (AM0) photons, measurement of the cells as a function of temperature and illumination intensity, and contact pull strength tests. As expected, the cells are very resistant to electron and proton irradiation. However, when a selected cell type is exposed to low energy protons designed to penetrate to the junction region, there is evidence of more significant damage. A significant amount of recovery was observed after annealing in several of the cells. However, it is not permanent and durable, but merely a temporary restoration, later nullified with additional irradiation. Contact pull strengths measured on the triple junction a-Si cells averaged 667 grams, and pull strengths measured on the Boeing CuInSe2 cells averaged 880 grams. Significant degradation of all cell types was observed after exposure to a 580 hour photon degradation test, regardless of whether the cells had been unirradiated or irradiated (electrons or protons). Although one cell from one manufacturer lost approximately 60 percent of its power after the photon test, several other cells from this manufacturer did not degrade at all.

Mueller, Robert L.↗

NASA NTRS1994

High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates

We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

Venkatasubramanian, R.↗

NASA NTRS1995

The progress of large area GaInP2/GaAs/Ge triple junction cell development at Spectrolab

In this paper we report the successful fabrication of large area, monolithic triple junction, n on p, GaInP2/GaAs/Ge cells. The highest open circuit voltage and cell efficiency (cell area: 4.078 sq cm) were measured at 2.573 V and 23.3%, respectively, under 1 sun, AMO illumination. To our knowledge, this is the highest single crystal, monolithic, two terminal triple junction cell efficiency demonstrated. In addition, excellent uniformity across a 3 inch diameter Ge substrates has also been achieved. An average cell efficiency of 22.8% across the 3 inch diameter wafer has been measured. We have also successfully fabricated welded cell-interconnect-cover (CIC) assemblies using these triple junction devices. The highest CIC efficiency was 23.2% (bare cell efficiency was 23.3%). The average efficiency for 25 CICs was 21.8%, which is very comparable to the 22.0% average bare cell efficiency before they were fabricated into the CICs. Finally, we have measured temperature coefficient and 1 MeV electron irradiation data. These will be presented in the paper.

Chiang, P. K.↗

NASA NTRS1995

InP tunnel junction for InGaAs/InP tandem solar cells

Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting minimal doping cross diffusion in the narrow space-charge region (approximately 1-5 nm) of the device. The fabrication of tandem devices using InP tunnel diodes as interconnect is in progress and will be reported at the conference.

Vilela, M. F.↗

NASA NTRS1996

Fast Risetime Reverse Bias Pulse Failures in SiC PN Junction Diodes

SiC-based high temperature power devices are being developed for aerospace systems which will require high reliability. One behavior crucial to power device reliability. To date, it has necessarily been assumed to date is that the breakdown behavior of SiC pn junctions will be similar to highly reliable silicon-based pn junctions. Challenging this assumption, we report the observation of anomalous unreliable reverse breakdown behavior in moderately doped (2-3 x 10(exp 17) cm(exp -3)) small-area 4H- and 6H-SiC pn junction diodes at temperatures ranging from 298 K (25 C) to 873 K (600 C). We propose a mechanism in which carrier emission from un-ionized dopants and deep level defects leads to this unstable behavior. The fundamental instability mechanism is applicable to all wide bandgap semiconductors whose dopants are significantly un-ionized at typical device operating temperatures.

Neudeck, Philip G.↗

NASA NTRS1997

Electrodeposited CuInSe2 Thin Film Junctions

We have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply varying the deposition potential. A CIS pn junction was deposited using a step-function potential. Stoichiometry of the single layer films was determined by energy dispersive spectroscopy. Carrier densities of these films increased with deviation from stoichiometry, as determined by the capacitance versus voltage dependence of Schottky contacts. Optical bandgaps for the single layer films as determined by transmission spectroscopy were also found to increase with deviation from stoichiometry. Rectifying current versus voltage characteristics were demonstrated for the Schottky barriers and for the pn junction.

Raffaelle, R. P.↗

NASA NTRS1996

A Comprehensive Analysis of the Physical Properties of Advanced GaAs/AlGaAs Junctions

Extensive studies have been performed on MQW junctions and structures because of their potential applications as avalanche photodetectors in optical communications and imaging systems. The role of the avalanche photodiode is to provide for the conversion of an optical signal into charge. Knowledge of junction physics, and the various carrier generation/recombination mechanisms, is crucial for effectively optimizing the conversion process and increasing the structure's quantum efficiency. In addition, the recent interest in the use of APDs in imaging systems has necessitated the development of semiconductor junctions with low dark currents and high gains for low light applications. Because of the high frame rate and high pixel density requirements in new imaging applications, it is necessary to provide some front-end gain in the imager to allow operation under reasonable light conditions. Understanding the electron/hole impact ionization process, as well as diffusion and surface leakage effects, is needed to help maintain low dark currents and high gains for such applications. In addition, the APD must be capable of operating with low power, and low noise. Knowledge of the effects of various doping configurations and electric field profiles, as well as the excess noise resulting from the avalanche process, are needed to help maintain low operating bias and minimize the noise output.

Menkara, Hicham M.↗

NASA NTRS1998

Electrodeposited CulnSe2 Thin Film Junctions

Raffaelle, R. P.↗

NASA NTRS1999

The Conductor-Dielectric Junctions in a Low Density Plasma

A conductor-dielectric junction exposed to the space environment is a frequent spacecraft design feature. Due to spacecraft charging and/or solar array operation, the conductor can acquire a high potential with respect to the surrounding plasma. If this potential is positive the insulators adjacent to exposed conductors can collect current as if they were conductors themselves. This phenomenon, called snapover, results in a substantial increase in current collection, and may even result in a glow discharge if the potential is high enough. If a conductor has a negative potential, arcing can occur at the site of a junction. Both of these phenomena negatively affect spacecraft operation. To prevent negative consequences, the physical mechanisms of snapover and arc inception require investigation. In this paper, results are presented of an experimental and theoretical study of snapover, glow discharge, and arc phenomena for different materials immersed in argon or xenon plasmas. The effect of snapover is investigated for several metal-dielectric junctions: copper-teflon, copper-Kapton, copper-glass, aluminum-teflon, aluminum-Kapton, steel-teflon, anodized aluminum with pinholes, and copper-ceramics. I-V curves are measured and snapover inception voltages, essential parameters (increase in current and collection area due to secondary electrons), and glow discharge inception thresholds are determined. Optical spectra are obtained for glow discharges in both argon and xenon plasmas. These spectra provide information regarding atomic species entrapped in the glow region. Some spectral lines can be used to estimate plasma parameters in the discharge area. A video-camera and linear array were used to confirm that snapover inception is accompanied by very low intensity visible light emission. This result seems to be important for the estimate of the light pollution around spacecraft. Optical spectra (wavelengths 380-650 nm) of arcs are also obtained on a negatively biased chromic acid anodized aluminum plate immersed in low density argon and xenon plasmas. Analysis of these spectra confirms our earlier findings that aluminum atoms are ejected from the arc site. Moreover, it is found that chromium atoms are also quite abundant in the arc plasma. It is believed that the latter results contribute considerably to the understanding of processes of plasma contamination caused by arcing.

Vayner, Boris↗

NASA NTRS2002

Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

Ringel, S. A.↗

NASA NTRS2003

Effect of Alignment on Transport Properties of Carbon Nanotube/Metallic Junctions

Ballistic and spin coherent transport in single walled carbon nanotubes (SWCNT) are predicted to enable high sensitivity single-nanotube devices for strain and magnetic field sensing. Based upon these phenomena, electron beam lithography procedures have been developed to study the transport properties of purified HiPCO single walled carbon nanotubes for development into sensory materials for nondestructive evaluation. Purified nanotubes are dispersed in solvent suspension and then deposited on the device substrate before metallic contacts are defined and deposited through electron beam lithography. This procedure produces randomly dispersed ropes, typically 2 - 20 nm in diameter, of single walled carbon nanotubes. Transport and scanning probe microscopy studies have shown a good correlation between the junction resistance and tube density, alignment, and contact quality. In order to improve transport properties of the junctions a technique has been developed to align and concentrate nanotubes at specific locations on the substrate surface. Lithographic techniques are used to define local areas where high frequency electric fields are to be concentrated. Application of the fields while the substrate is exposed to nanotube-containing solution results in nanotube arrays aligned with the electric field lines. A second electron beam lithography layer is then used to deposit metallic contacts across the aligned tubes. Experimental measurements are presented showing the increased tube alignment and improvement in the transport properties of the junctions.

Wincheski, Buzz↗

NASA NTRS1989

Effects of microgravity on liposome-reconstituted cardiac gap junction channeling activity

Effects of microgravity on cardiac gap junction channeling activity were investigated aboard NASA zero-gravity aircraft. Liposome-reconstituted gap junctions were assayed for channel function during free-fall, and the data were compared with channeling at 1 g. Control experiments tested for 0 g effects on the structural stability of liposomes, and on the enzyme-substrate signalling system of the assay. The results demonstrate that short periods of microgravity do not perturb reconstituted cardiac gap junction channeling activity.

Heart/physiology↗

NASA NTRS2003

Precise Heater Controller with rf-Biased Josephson Junctions

Paramagnetic susceptibility thermometers used in fundamental physics experiments are capable of measuring temperature changes with a precision of a part in 2 x 10(exp 10). However, heater controllers are only able to control open-loop power dissipation to about a part in 10(exp 5). We used an array of rf-biased Josephson junctions to precisely control the electrical power dissipation in a heater resistor mounted on a thermally isolated cryogenic platform. Theoretically, this method is capable of controlling the electrical power dissipation to better than a part in 10(exp 12). However, this level has not yet been demonstrated experimentally. The experiment consists of a liquid helium cell that also functions as a high-resolution PdMn thermometer, with a heater resistor mounted on it. The cell is thermally connected to a temperature-controlled cooling stage via a weak thermal link. The heater resistor is electrically connected to the array of Josephson junctions using superconducting wire. An rf-biased array of capacitively shunted Josephson junctions drives the voltage across the heater. The quantized voltage across the resistor is Vn = nf(h/2e), where h is Planck's constant, f is the array biasing frequency, e is the charge of an electron, and n is the integer quantum state of the Josephson array. This results in an electrical power dissipation on the cell of Pn = (Vn)(sup 2/R), where R is the heater resistance. The change of the quantum state of the array changes the power dissipated in the heater, which in turn, results in the change of the cell temperature. This temperature change is compared to the expected values based on the known thermal standoff resistance of the cell from the cooling stage. We will present our initial experimental results and discuss future improvements. This work has been funded by the Fundamental Physics Discipline of the Microgravity Science Office of NASA, and supported by a no-cost equipment loan from Sandia National Laboratories.

Green, Colin J.↗

NASA NTRS2005

Investigation of the Carbon Arc Source as an AM0 Solar Simulator for Use in Characterizing Multi-Junction Solar Cells

The operation of multi-junction solar cells used for production of space power is critically dependent on the spectral irradiance of the illuminating light source. Unlike single-junction cells where the spectral irradiance of the simulator and computational techniques may be used to optimized cell designs, optimization of multi-junction solar cell designs requires a solar simulator with a spectral irradiance that closely matches AM0.

Xu, Jianzeng↗

NASA NTRS2006

Graded junction termination extensions for electronic devices

A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.

Merrett, J. Neil↗