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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Anisotropic Piezocomposite Actuator Incorporating Machined PMN-PT Single Crystal Fibers

The design, fabrication, and testing of a flexible, planar, anisotropic piezoelectric composite actuator utilizing machined PMN-32%PT single crystal fibers is presented. The device consists of a layer of rectangular single crystal piezoelectric fibers in an epoxy matrix, packaged between interdigitated electrode polyimide films. Quasistatic free-strain measurements of the single crystal device are compared with measurements from geometrically identical specimens incorporating polycrystalline PZT-5A and PZT-5H piezoceramic fibers. Free-strain actuation of the single crystal actuator at low bipolar electric fields (+/- 250 V/mm) is approximately 400% greater than that of the baseline PZT-5A piezoceramic device, and 200% greater than that of the PZT-5H device. Free-strain actuation under high unipolar electric fields (0-4kV/mm) is approximately 200% of the PZT-5A baseline device, and 150% of the PZT-5H alternate piezoceramic device. Performance increases at low field are qualitatively consistent with predicted increases based on scaling the low-field d(sub 33) piezoelectric constants of the respective piezoelectric materials. High-field increases are much less than scaled d(sub 33) estimates, but appear consistent with high-field freestrain measurements reported for similar bulk single-crystal and piezoceramic compositions. Measurements of single crystal actuator capacitance and coupling coefficient are also provided. These properties were poorly predicted using scaled bulk material dielectric and coupling coefficient data. Rules-of-mixtures calculations of the effective elastic properties of the single crystal device and estimated actuation work energy densities are also presented. Results indicate longitudinal stiffnesses significantly lower (50% less) than either piezoceramic device. This suggests that single-crystal piezocomposite actuators will be best suited to low induced-stress, high strain and deflection applications.

Wilkie, W. Keats↗
NASA NTRS2006

Anisotropic Laminar Piezocomposite Actuator Incorporating Machined PMN-PT Single Crystal Fibers

The design, fabrication, and testing of a flexible, laminar, anisotropic piezoelectric composite actuator utilizing machined PMN-32%PT single crystal fibers is presented. The device consists of a layer of rectangular single crystal piezoelectric fibers in an epoxy matrix, packaged between interdigitated electrode polyimide films. Quasistatic free-strain measurements of the single crystal device are compared with measurements from geometrically identical specimens incorporating polycrystalline PZT-5A and PZT-5H piezoceramic fibers. Free-strain actuation of the single crystal actuator at low bipolar electric fields (+/- 250 V/mm) is approximately 400% greater than that of the baseline PZT-5A piezoceramic device, and 200% greater than that of the PZT-5H device. Free-strain actuation under high unipolar electric fields (0-4kV/mm) is approximately 200% of the PZT-5A baseline device, and 150% of the PZT-5H alternate piezoceramic device. Performance increases at low field are qualitatively consistent with predicted increases based on scaling the low-field d33 piezoelectric constants of the respective piezoelectric materials. High-field increases are much less than scaled d33 estimates, but appear consistent with high-field freestrain measurements reported for similar bulk single-crystal and piezoceramic compositions. Measurements of single crystal actuator capacitance and coupling coefficient are also provided. These properties were poorly predicted using scaled bulk material dielectric and coupling coefficient data. Rules-of-mixtures calculations of the effective elastic properties of the single crystal device and estimated actuation work energy densities are also presented. Results indicate longitudinal stiffnesses significantly lower (50% less) than either piezoceramic device. This suggests that single-crystal piezocomposite actuators will be best suited to low induced-stress, high strain and deflection applications.

Wilkie, W. Keats↗
NASA NTRS1992

TEM studies of a circumstellar rock

Reported here is the discovery of crystals of titanium carbide in a grain of silicon carbide which formed as a circumstellar dust particle in the atmosphere of a carbon-rich star. Just as in the case of terrestrial rocks, whose assemblage of minerals gives us clues to the composition and conditions of the environment in which they formed, the titanium carbide crystals and their textural relationship to the silicon carbide give us important clues to the nature of the stellar atmosphere in which they formed. From microscopic studies of the relationships between the atomic planes of the silicon carbide and the titanium carbide, we can show that the titanium carbide cannot have existed as already-formed crystals in a gas around which silicon carbide subsequently condensed. An alternative possibility is that both minerals grew quickly and simultaneously from condensing gas in the rapidly cooling and expanding stellar atmosphere. Other microscopic features of the silicon carbide, such as abundant atomic layer disorder and crystal twinning, similarly suggest rapid grain growth. However, another possibility is that the titanium carbide grew inside of the silicon carbide by diffusion of titanium atoms. Our calculations suggest that this scenario is less likely, given the relatively short times (a year or less) for which stellar condensates can be expected to be exposed to temperatures high enough to make diffusion sufficiently rapid.

Bernatowicz, Thomas J.↗
NASA NTRS1991

A novel boundary layer sensor utilizing domain switching in ferroelectric liquid crystals

This paper describes the design and the principles of operation of a novel sensor for the optical detection of a shear stress field induced by air or gas flow on a rigid surface. The detection relies on the effects of shear-induced optical switching in ferroelectric liquid crystals. It is shown that the method overcomes many of the limitations of similar measuring techniques including those using cholesteric liquid crystals. The present method offers a preferred alternative for flow visualization and skin friction measurements in wind-tunnel experiments on laminar boundary layer transition investigations. A theoretical model for the optical response to shear stress is presented together with a schematic diagram of the experimental setup.

Parmar, D. S.↗
NASA NTRS1978

Solidification (crystal growth) in the presence of gravitational forces

The surface tension behavior of doped and undoped InSb melts was investigated as well as their temperature and composition dependence. Surface tension in InSb melts was determined using the sessile-drop technique covering the temperature range from 530 C to 880 C. A linear regression of the data obtained shows that the temperature dependence of sigma is 392- (T-530) x (7000) plus or minus 10 dyne/cm. The d sigma/d Tau for intrinsics InSb is less than that previously reported. On the basis of the surface tension data obtained, it is concluded that surface tension induced convective flow velocities in InSb under reduced gravity conditions range from zero to at most 1 cm/sec. Accordingly, no interference with dopant segregation can be expected during growth in space because the momentum boundary layer (at the crystal melt interface) associated with any Marangoni-type convective flows would, at the given growth rate, be significantly larger than the predicted diffusion boundary layer thickness.

Gatos, H. C.↗
NASA NTRS1981

Amorphous ice and the behavior of cometary nuclei

The gradual heating of the nucleus of a comet approaching the sun may produce solid-state phase changes that are of particular importance for new comets, which may never have been heated before. The water-ice component of new comets is expected to be amorphous rather than crystalline, and its subsequent crystallization should produce gaseous tails and flareups at heliocentric distances about 70% greater than those expected for crystalline nuclei. These distances and the size of the flareups depend strongly on the inclination of the rotation axis and on the porosity of the ice. The effect should be weaker for older comets, but it may be related to the behavior of P/Schwassmann-Wachmann 1 if the layers of the crystallized ice peel off.

Smoluchowski, R.↗
NASA NTRS1994

Making Porous Luminescent Regions In Silicon Wafers

Regions damaged by ion implantation stain-etched. Porous regions within single-crystal silicon wafers fabricated by straightforward stain-etching process. Regions exhibit visible photoluminescence at room temperature and might constitute basis of novel class of optoelectronic devices. Stain-etching process has advantages over recently investigated anodic-etching process. Process works on both n-doped and p-doped silicon wafers. Related development reported in article, "Porous Si(x)Ge(1-x) Layers Within Single Crystals of Si," (NPO-18836).

Fathauer, Robert W.↗
NASA NTRS2005

N-Type delta Doping of High-Purity Silicon Imaging Arrays

A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.

Blacksberg, Jordana↗
NASA NTRS1944

The Surface Structure of Ground Metal Crystals

The changes produced on metallic surfaces as a result of grinding and polishing are not as yet fully understood. Undoubtedly there is some more or less marked change in the crystal structure, at least, in the top layer. Hereby a diffusion of separated crystal particles may be involved, or, on plastic material, the formation of a layer in greatly deformed state, with possible recrystallization in certain conditions. Czochralski verified the existence of such a layer on tin micro-sections by successive observations of the texture after repeated etching; while Thomassen established, roentgenographically by means of the Debye-Scherrer method, the existence of diffused crystal fractions on the surface of ground and polished tin bars, which he had already observed after turning (on the lathe). (Thickness of this layer - 0.07 mm). Whether this layer borders direct on the undamaged base material or whether deformed intermediate layers form the transition, nothing is known. One observation ty Sachs and Shoji simply states that after the turning of an alpha-brass crystal the disturbance starting from the surface, penetrates fairly deep (approx. 1 mm) into the crystal (proof by recrystallization at 750 C).

Boas, W.↗
NASA NTRS2002

CRYSTAL-FACE: A Field Experiment and Modeling Program Focused on Tropical Anvils and Cirrus Layers

The Cirrus Regional Study of Tropical Anvils and Cirrus Layers - Florida Area Cirrus Experiment (CRYSTAL-FACE) is a measurement campaign designed to investigate tropical Cirrus cloud physical properties and formation processes. Understanding the production of upper tropospheric cirrus clouds is essential for the successful modeling of 'he Earth's climate. The deployment phase will occur in July, 2002 in southern Florida, USA. Several aircraft will be used, including the ER-2 and Proteus for cloud remote sensing, the WB-57 and Citation for in situ cloud measurements, the P-3 with a Doppler radar for characterization of convective systems, and the Twin otter for sampling of inflow airmasses. In addition, numerous ground-based and satellite remote sensing measurements will be contributing. A central focus of the mission is improvement of our ability to model cirrus clouds with numerical models. Several research groups with a variety of model types (cloud-resolving models, mesoscale models, weather-prediction models, and general circulation models) will be participating. Our hope is to fully characterize several mulonimbus/cirrus anvil systems that can be used as case studies for testing and improvement of the models. The models will be used for investigating cirrus generation and dissipation processes and the sensitivity of tropical cirrus to convective intensity and aerosol properties. Ultimately, we expect this effort to improve our ability to represent tropical cirrus in GCMs. A general description of the CRYSTAL-FACE program will be presented, with an emphasis on the cloud modeling approach.

Jenson, Eric↗
NASA NTRS1985

Accretionary rims on inclusions in the Allende meteorite

The origin and composition of the rim sequence on the refractory inclusion in the Allende meteorite are studied. The different textures, mineralogy, and mineral-chemistry of the four layers of the rim are described. The layers are composed of: pyroxene, needles, olivine, hedenbergite, and andradite. Tables of the element and chemical compositions of the layers are presented. The data reveals that: (1) the layers are highly porous masses of euhedral crystals with no intergrowth; (2) layers contain highly disequilibrium mineral assemblages; and (3) the thickness of the layers varies with the underlying topography. These results support the theory that rim structures are accretionary aggregates formed from accretion of independently grown particles onto the surface of inclusions. The formation of the grains in the layers and matrix from nebular condensates is studied.

Macpherson, G. J.↗
NASA NTRS1968

Reaction rates of graphite with ozone measured by etch decoration

Etch-decoration technique of detecting vacancies in graphite has been used to determine the reaction rates of graphite with ozone in the directions parallel and perpendicular to the layer planes. It consists essentially of peeling single atom layers off graphite crystals without affecting the remainder of the crystal.

Hennig, G. R.↗
NASA NTRS1982

Solar Cells From Metallurgical-Grade Silicon

Epitaxial deposition produces acceptable solar cells from metallurgicalgrade silicon. Instead of diffusing dopants into silicon to form pn junction, junction is formed by growing epitaxial layer--one having crystal structure continuous with that of substrate--on metallurgical-grade silicon. Less pure forms of silicon, such as metallurgical-grade, are less expensive than semiconductor-grade material and help to lower cost of solar cells.

Daiello, R. V.↗
NASA NTRS1980

Rocks of the early lunar crust

Data are summarized which suggest a model for the early evolution of the lunar crust. According to the model, during the final stages of accretion, the outer part of the moon melted to form a magma ocean approximately 300 km deep. This ocean fractionated to form mafic and ultramafic cumulates at depth and an overlying anorthositic crust made up of ferroan anorthosites. Subsequent partial melting in the primitive mantle underlying the crystallized magma ocean produced melts which segregated, moved upward, intruded the primordial crust, and crystallized to form layered plutons consisting of Mg-rich plutonic rocks. Intense impact bombardment at the lunar surface mixed and melted the rocks of the two suites to form a thick layer of granulated debris, granulitic breccias, and impact-melt rocks.

James, O. B.↗
NASA NTRS1986

A preliminary report on a possible stromatolite find from the Elephant Moraine, Antarctica: A potential directional indicator for ice movement

During the 1983 to 1984 Antarctic Search for Meteorites field season, numerous specimens of a shiny black rock were collected from among the glacial debris at the Elephant Moraine. From a distance these black rocks gave the appearance of meteorites, but upon closer inspection, distinct layering and radial crystal growth patterns became clearly visible. Laboratory investigations showed that these unusual specimens are primarily composed of carbonate minerals. Petrographically, microscopic examination of twelve randomly collected specimens revealed a variety in the habits of the carbonates, but the overall trend tends to be one of radiating acicular crystals that have the appearance of a pseudo-cellular structure reminiscent of stromatolites. It is not possible at this time to specifically identify this possible stromatolite material or its source locality.

Sipiera, P. P.↗
NASA NTRS2005

Quantitative Electron Probe Microanalysis: State of the Art

Quantitative electron-probe microanalysis (EPMA) has improved due to better instrument design and X-ray correction methods. Design improvement of the electron column and X-ray spectrometer has resulted in measurement precision that exceeds analytical accuracy. Wavelength-dispersive spectrometer (WDS) have layered-dispersive diffraction crystals with improved light-element sensitivity. Newer energy-dispersive spectrometers (EDS) have Si-drift detector elements, thin window designs, and digital processing electronics with X-ray throughput approaching that of WDS Systems. Using these systems, digital X-ray mapping coupled with spectrum imaging is a powerful compositional mapping tool. Improvements in analytical accuracy are due to better X-ray correction algorithms, mass absorption coefficient data sets,and analysis method for complex geometries. ZAF algorithms have ban superceded by Phi(pz) algorithms that better model the depth distribution of primary X-ray production. Complex thin film and particle geometries are treated using Phi(pz) algorithms, end results agree well with Monte Carlo simulations. For geological materials, X-ray absorption dominates the corretions end depends on the accuracy of mass absorption coefficient (MAC) data sets. However, few MACs have been experimentally measured, and the use of fitted coefficients continues due to general success of the analytical technique. A polynomial formulation of the Bence-Albec alpha-factor technique, calibrated using Phi(pz) algorithms, is used to critically evaluate accuracy issues and can be also be used for high 2% relative and is limited by measurement precision for ideal cases, but for many elements the analytical accuracy is unproven. The EPMA technique has improved to the point where it is frequently used instead of the petrogaphic microscope for reconnaissance work. Examples of stagnant research areas are: WDS detector design characterization of calibration standards, and the need for more complete treatment of the continuum X-ray fluorescence correction.

Carpernter, P. K.↗
NASA NTRS1992

Columnar and subsurface silicide growth with novel molecular beam epitaxy techniques

We have found novel growth modes for epitaxial CoSi2 at high temperatures coupled with Si-rich flux ratios or low deposition rates. In the first of these modes, codeposition of metal and Si at 600-800 C with excess Si leads to the formation of epitaxial silicide columns surrounded by single-crystal Si. During the initial stages of the deposition, the excess Si grows homoepitaxially in between the silicide, which forms islands, so that the lateral growth of the islands is confined. Once a template layer is established by this process, columns of silicide form as a result of selective epitaxy of silicide on silicide and Si on Si. This growth process allows nanometer control over silicide particles in three dimensions. In the second of these modes, a columnar silicide seed layer is used as a template to nucleate subsurface growth of CoSi2. With a 100 nm Si layer covering CoSi2 seeds, Co deposited at 800C and 0.01 nm/s diffuses down to grow on the buried seeds rather than nucleating surface silicide islands. For thicker Si caps or higher deposition rates, the surface concentration of Co exceeds the critical concentration for nucleation of islands, preventing this subsurface growth mode from occurring. Using this technique, single-crystal layers of CoSi2 buried under single-crystal Si caps have been grown.

Fathauer, R. W.↗