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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Atomic Structural Features of Stacking Faults and Domain Connections in the Li- and Mn-Rich Cathode

Li- and Mn-rich layered oxides (LMRs), a class of earth-abundant materials for rechargeable Li-ion battery cathodes, crystallize into layered structures of two different symmetries: C2/m represented by Li 2 MnO 3 and R$\overline{3}$m represented by LiMn 0.5 Ni 0.5 O 2 . Fundamental questions about how the C2/m and R$\overline{3}$m domains spatially correlate within the same oxide grain and how the C2/m stacking faults arrange themselves when this happens still remain. Here, by using integrated differential phase contrast imaging in scanning transmission electron microscopy (STEM-iDPC), we probe the structural and compositional details of a prototypical, cobalt-free LMR material, 0.3Li 2 MnO 3 •0.7LiMn 0.5 Ni 0.5 O 2 (Li 1.13 Mn 0.57 Ni 0.3 O 2 ). The connection between the C2/m and R$\overline{3}$m domains is found to be abrupt, facilitated by the small lattice mismatch between the two structures. Stacking faults in the C2/m domains feature atomic plane shifting that accommodates stacking sequence changes, which explains why the stacking faults form in a random manner. Furthermore, a local disordering mechanism was identified to correlate with the C2/m stacking faults. Chemically, it is found that Ni coexists with Mn at the transition metal sites within the nominal Li 2 MnO 3 domain. As a result, this study demonstrates that STEM-iDPC is a very useful tool for capturing all the elements in a single image, revealing atomic details on domain connections and stacking faults in the LMRs.

Li-rich and Mn-rich oxides↗
DOE OSTI2022

A Review of Scalable Hexagonal Boron Nitride ( h -BN) Synthesis for Present and Future Applications

Hexagonal boron nitride (h-BN) is a layered inorganic synthetic crystal exhibiting high temperature stability and high thermal conductivity. As a ceramic material it has been widely used for thermal management, heat shielding, lubrication, and as a filler material for structural composites. Recent scientific advances in isolating atomically thin monolayers from layered van der Waals crystals to study their unique properties has propelled research interest in mono/few layered h-BN as a wide bandgap insulating support for nanoscale electronics, tunnel barriers, communications, neutron detectors, optics, sensing, novel separations, quantum emission from defects, among others. Realizing these futuristic applications hinges on scalable cost-effective high-quality h-BN synthesis. Here, in this work, the authors review scalable approaches of high-quality mono/multilayer h-BN synthesis, discuss the challenges and opportunities for each method, and contextualize their relevance to emerging applications. Maintaining a stoichiometric balance B:N = 1 as the atoms incorporate into the growing layered crystal and maintaining stacking order between layers during multi-layer synthesis emerge as some of the main challenges for h-BN synthesis and the development of processes to address these aspects can inform and guide the synthesis of other layered materials with more than one constituent element. Finally, the authors contextualize h-BN synthesis efforts along with quality requirements for emerging applications via a technological roadmap.

2D materials↗
DOE OSTI2020

Perovskite-Derivative Valleytronics

Halide perovskites are revolutionizing the renewable energy sector owing to their high photovoltaic efficiency, low manufacturing cost, and flexibility. Their remarkable mobility and long carrier lifetime are also valuable for information technology, but fundamental challenges like poor stability under an electric field prevent realistic applications of halide perovskites in electronics. Here, it is discovered that valleytronics is a promising route to leverage the advantages of halide perovskites and derivatives for information storage and processing. The synthesized all-inorganic lead-free perovskite derivative, Cs 3 Bi 2 I 9 , exhibits strong light-matter interaction and parity-dependent optically addressable valley degree of freedom. In this work, robust optical helicity in all odd-layer-number crystals with inversion symmetry breaking is observed, indicating excitonic coherence extending well beyond 11 layers. The excellent optical and valley properties of Cs 3 Bi 2 I 9 arise from the unique parallel bands, according to first principles calculations. This discovery points to new materials design principles for scalable valleytronic devices and demonstrates the promise of perovskite derivatives beyond energy applications.

2D materials↗
DOE OSTI2024

Effect of relative humidity on the interlayer spacing of phosphate intercalated Mg, Al layered double hydroxide (hydrotalcite‐like) crystals

Abstract The availability of water and the type of interlayer anions present affect the arrangement and interlayer spacing of layered double hydroxide (LDH). A systematic study of the effect of relative humidity (RH) on the basal spacing of phosphate intercalated, magnesium aluminum LDHs (MgAl–PO 4 LDH) was conducted, confirming that MgAl‐PO 4 LDH exhibit distinct interlayer spacing corresponding to separate low‐ and high‐hydration states produced when exposed to low and high humidity conditions. The transition from the low‐ to high‐hydration form begins when RH exceeds 33% and is accompanied by the transition from one to two interlayers of water. An improved understanding of the effect of RH on MgAl–PO 4 LDHs will enable more accurate atomistic modeling and experimental characterization of MgAl–PO 4 LDHs and may lead to improvements in the tunability of MgAl‐PO 4 LDHs for commercial applications such as slow‐release fertilizer.

Reed, Titus↗
DOE OSTI2021

Understanding the phase transformation mechanisms that affect the dynamic response of Fe-based microstructures at the atomic scales

Large-scale molecular dynamics (MD) simulations were carried out to investigate the shock-induced evolution of microstructure in Fe-based systems comprising single-crystal and layered Cu/Fe alloys with a distribution of interfaces. The shock compression of pure single-crystal Fe oriented along [110] above a threshold pressure results in a BCC (α)→HCP (ε) phase transformation behavior that generates a distribution of ε phase variants in the phase transformed region of the microstructure behind the shock front. The propagation of the release wave through a phase transformed ε phase causes a reverse ε→α phase transformation and renders a distribution of twins for the [110] oriented Fe that serve as void nucleation sites during spall failure. The simulations reveal that the α→ε→α transformation-induced twinning for shock loading along the [110] direction is due to a dominant ε phase variant formed during compression that rotates on the arrival of the release wave followed by a reverse phase transformation to twins in the α phase. The modifications in the evolution of the ε phase variants and twins in Fe behavior are also studied for Cu–Fe layered microstructures due to the shock wave interactions with the Cu/Fe interfaces using a newly constructed Cu–Fe alloy potential. Here, the MD simulations suggest that interfaces affect the observed variants during shock compression and, hence, distributions of twins during shock release that affects the void nucleation stresses in the Fe phase of Cu/Fe microstructures.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Sensitivity of electronic structure to crystal distortions in infinite-layered LaNiO 2

Recent observations of unconventional superconductivity (SC) in thin films of LaNiO 2 (critical temperature T c ≃ 10 K) and in bulk single crystals of La 3 ⁢Ni 2 ⁢O 7 under pressure T c ≃ 80K have cemented a long sought-after class of SC nickelates. In La 1–x ⁢Sr⁢ x ⁢NiO 2 , SC appears only in films for reasons not understood. We perform a combination of experiments to probe the crystal structure and magnetic order in bulk LaNiO 2 together with ab initio calculations of the electronic structure. We find that the infinite layers are naturally buckled out-of-plane. The electronic bands are largely unaffected by the buckling, but uniaxial compression along the c axis may lead to a Lifshitz transition.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Anomalous Second Harmonic Generation from Atomically Thin MnBi 2 Te 4

MnBi 2 Te 4 is a van der Waals topological insulator with intrinsic intralayer ferromagnetic exchange and A-type antiferromagnetic (AFM) interlayer coupling. Theoretically, it belongs to a class of structurally centrosymmetric crystals whose layered antiferromagnetic order breaks inversion symmetry for even layer numbers, making optical second harmonic generation (SHG) an ideal probe of the coupling between the crystal and magnetic structures. Here, we perform magnetic field and temperature dependent SHG measurements on MnBi 2 Te 4 flakes ranging from bulk to monolayer thickness. We find that the dominant SHG signal from MnBi 2 Te 4 is unexpectedly unrelated to both magnetic state and layer number. As a result, we suggest that surface SHG is the likely source of the observed strong SHG, whose symmetry matches that of the MnBi 2 Te 4 -vacuum interface. Our results highlight the importance of considering the surface contribution to inversion symmetry breaking in van der Waals centrosymmetric magnets.

2D magnets↗
DOE OSTI2023

Above-Room-Temperature Ferromagnetism in Thin van der Waals Flakes of Cobalt-Substituted Fe 5 GeTe 2

Two-dimensional (2D) magnetic van der Waals materials provide a powerful platform for studying the fundamental physics of low-dimensional magnetism, engineering novel magnetic phases, and enabling thin and highly tunable spintronic devices. To realize high-quality and practical devices for such applications, there is a critical need for robust 2D magnets with ordering temperatures above room temperature that can be created via exfoliation. Here, in this paper, the study of exfoliated flakes of cobalt-substituted Fe 5 GeTe 2 (CFGT) exhibiting magnetism above room temperature is reported. Via quantum magnetic imaging with nitrogen-vacancy centers in diamond, ferromagnetism at room temperature was observed in CFGT flakes as thin as 16 nm corresponding to 16 layers. This result expands the portfolio of thin room-temperature 2D magnet flakes exfoliated from robust single crystals that reach a thickness regime relevant to practical spintronic applications. The Curie temperature T c of CFGT ranges from 310 K in the thinnest flake studied to 328 K in the bulk. To investigate the prospect of high-temperature monolayer ferromagnetism, Monte Carlo calculations were performed, which predicted a high value of T c of ~270 K in CFGT monolayers. Pathways toward further enhancing monolayer T c are discussed. These results support CFGT as a promising platform for realizing high-quality room-temperature 2D magnet devices.

2D magnetism↗
DOE OSTI2022

“Breathing” organic cation to stabilize multiple structures in low-dimensional Ge-, Sn-, and Pb-based hybrid iodide perovskites

Low-dimensional hybrid inorganic–organic perovskites are excellent candidates for stable optoelectronic devices. The dimensionality of these perovskites depends largely on the organic and inorganic compositions, as well as the synthetic conditions. We report five new hybrid iodides, (ETU) 4 Ge 5 I 18 , (ETU)GeI 4 , (ETU)SnI 4 , (ETU)PbI 4 , and (ETU) 3 Pb 2 I 10 using only one type of organic cation, namely, S-(2-aminoethyl)isothiouronium (ETU). (ETU)GeI 4 and (ETU)SnI 4 belong to the (110)-oriented structure-type with “3 × 3” sawtooth corrugated layers and crystallize in a structure with the orthorhombic space group Pbca. (ETU) 4 Ge 5 I 18 crystallizes in a structure with the triclinic space group P$\bar{1}$with combining macron], featuring a 2D layered structure with combinations of corner, edge, and face-sharing [GeI 6 ] octahedra. For the Pb-based series, (ETU)PbI 4 has the conventional (100) – oriented 2D type whereas (ETU) 3 Pb 2 I 10 has a unique 0D structure. Remarkably, the unstable 2D orange-phase (ETU)PbI 4 transforms to a stable 0D yellow phase (ETU) 3 Pb 2 I 10 , accompanied by the reduction of the C–S–C angle of the organic cation ETU. The optical band gaps are largely regulated by the diverse types of structure and are in the range of 1.8 eV to 2.8 eV. (ETU)SnI 4 is the only material showing notable photoluminescence at room-temperature. Our work showcases the flexibility of the organic cation in determining the structural dimensionality and provides a new strategy in generating new hybrid materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

A practical guide for crystal growth of van der Waals layered materials

This Tutorial provides an overview of the techniques that are most commonly utilized to grow bulk van der Waals crystals. The materials discussed were selected to highlight various challenges that are often encountered during crystal growth. Additionally, in relatively equal parts, the text covers melt-based techniques, vapor transport growths, and the characterization of crystal quality with an emphasis on structural and chemical homogeneities. Furthermore, pertinent details are given regarding the growth and characterization of many specific compounds, with examples mostly drawn from our own research, and an effort is made to highlight cases where the growths offer a particular lesson or the conditions have a significant impact on the crystal’s physical properties. A primary goal is to motivate more researchers to grow crystals by providing general descriptions and considerations for different growth techniques and equipment while sharing some of our own lessons learned and best practices for the growth and characterization of layered van der Waals crystals. The Tutorial is not written solely for aspiring crystal growers, however, because any researcher who collaborates with a crystal grower can benefit from having a greater understanding and appreciation of the processes of crystal growth and materials development.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Physical properties of the layered $\mathcal{f}$-electron van der Waals magnet Ce 2 Te 5

Here. we report a detailed study of the magnetic, transport, and thermodynamic properties of Ce 2 Te 5 single crystals, a layered $\mathcal{f}$-electron van der Waals magnet. Four consecutive transitions at ~5.2, 2.1, 0.9, and 0.4 K were observed in the ac-plane electrical resistivity $\rho(T)$, which were further confirmed in specific heat $C_\text{p}(T)$ measurements. Analysis of the magnetic susceptibility $\chi(T)$, the magnetic-field variation of $\rho(T)$, and the increase of the first transition temperature ($T_c$ ~ 5.2 K) with applied magnetic field indicates ferromagnetic order, while the decrease of the other transitions with field suggests different states with dominant antiferromagnetic interactions below $T_2$ ~ 2.1 K, $T_3$ ~ 0.9 K, and $T_4$ = 0.4 K. Critical behavior analysis around Tc that gives critical exponents $\beta$ = 0.31(2), $\gamma$ = 0.99(2), $\delta$ = 4.46(1), and $T_c$ = 5.32(1) K indicates that Ce 2 Te 5 shows a three-dimensional magnetic critical behavior. Moreover, the Hall resistivity ρxy indicates that Ce2Te5 is a multiband system with a relatively high electron mobility ~2900 cm 2 V –1 s –1 near $T_c$, providing further opportunities for future device applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Designed 2D protein crystals as dynamic molecular gatekeepers for a solid-state device

The sensitivity and responsiveness of living cells to environmental changes are enabled by dynamic protein structures, inspiring efforts to construct artificial supramolecular protein assemblies. However, despite their sophisticated structures, designed protein assemblies have yet to be incorporated into macroscale devices for real-life applications. We report a 2D crystalline protein assembly of C98/E57/E66 L-rhamnulose-1-phosphate aldolase ( CEE RhuA) that selectively blocks or passes molecular species when exposed to a chemical trigger. CEE RhuA crystals are engineered via cobalt(II) coordination bonds to undergo a coherent conformational change from a closed state (pore dimensions <1 nm) to an ajar state (pore dimensions ~4 nm) when exposed to an HCN(g) trigger. When layered onto a mesoporous silicon (pSi) photonic crystal optical sensor configured to detect HCN (g) , the 2D CEE RhuA crystal layer effectively blocks interferents that would otherwise result in a false positive signal. The 2D CEE RhuA crystal layer opens in selective response to low-ppm levels of HCN (g) , allowing analyte penetration into the pSi sensor layer for detection. These findings illustrate that designed protein assemblies can function as dynamic components of solid-state devices in non-aqueous environments.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Electronic and optical properties of crystalline nitrogen versus black phosphorus: A comparative first-principles study

We report crystalline black nitrogen (BN) is an allotrope of nitrogen with the black phosphorus (BP) structure recently synthesized at high pressure by two independent research groups. Here, we present a systematic study of the electronic and optical properties of BN focusing on its comparison with BP. To this end, we use the state-of-the-art quasiparticle self-consistent GW approach with vertex corrections in both the electronic and optical channels. Despite many similarities, the properties of BN are found to be considerably different. Unlike BP, BN exhibits a larger optical gap (2.5 vs 0.26 eV), making BN transparent in the visible spectral region with a highly anisotropic optical response. This difference can be primarily attributed to a considerably reduced dielectric screening in BN, leading to enhancement of the effective Coulomb interaction. Despite relatively strong Coulomb interaction, exciton formation is largely suppressed in both materials. Our analysis of the elastic properties shows exceptionally high stiffness of BN, comparable to that of diamond.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Remote Epitaxy of III-V Solar Cells via Hydride Vapor Phase Epitaxy

The promise of remote epitaxy, in which epitaxial registry of a film can still be maintained through two-dimensional layers, has emerged from an advanced understanding of the interactions between two dimensional materials and bulk semiconductors. A promising application of this technology is to facilitate substrate reuse in epitaxial III-V systems, which could significantly reduce material cost and improve commercial viability of this high-efficiency photovoltaic technology. In this process the weak van der Waal bonds between the 2D layer and the III-V substrate make separation of epitaxially-grown layers simple and leaves a smooth substrate that can be reused for cost reduction. Here we present a study of growth parameters of GaAs on AlGaAs through a low dimensional carbon interlayer via hydride vapor phase epitaxy (HVPE). We Investigate the effect of various GaAs nucleation conditions such as V/III ratio, temperature and growth rate on film roughness, crystallinity, and degree of epitaxial alignment. We demonstrate growth of single crystal GaAs layer on top of the low dimensional carbon that follow the crystal orientation of the substrate. Surface roughness measured via AFM found that lower V/III ratios result in smoother III-V films grown on the low dimensional carbon, with a lowest RMS of ~60 nm obtained at a V/III ratio of 5. Growth temperatures are optimized at 650 C, as temperatures below 550 C show non-crystalline growth and higher temperature samples display very rough surfaces. Additionally, we investigate HVPE growth on various forms of low-dimensional carbon including transferred graphene, CVD-grown graphene, and MOCVD-growth amorphous carbon and find the latter to be most well suited for III-V growth as this method results in cleaner interface and potential for direct, large-area coverage. We also identify techniques to mitigate surface degradation in carbon layers as a function of both exposure time and growth environment by analyzing surface changes via x-ray reflectivity. We show growth of heteroepitaxial III-V solar cells on carbon interlayers and preliminary cell results, which are currently limited to 4% efficiency under one sun.

AlGaAs↗
DOE OSTI2023

Magnetic ground state and perturbations of the distorted kagome Ising metal TmAgGe

Here, we present the magnetic orders and excitations of the distorted kagome intermetallic magnet TmAgGe. Using neutron single crystal diffraction we identify the propagation vectors k = ($\frac{1}{2}$ 0 0) and k = (0 0 0) and determine the magnetic structures of the zero-field and magnetic field-induced phases for H along the $\mathcal{a}$ and [–110] crystal directions. We determine the experimental magnetic field- temperature (H, T)-phase diagram and reproduce it by Monte Carlo simulations of an effective spin exchange Hamiltonian for one distorted kagome layer. Our model includes a strong axial single-ion anisotropy and significantly smaller exchange couplings, which span up to the third-nearest neighbors within the layer. Single crystal inelastic neutron scattering (INS) measurements reveal an almost flat, only weakly dispersive mode around 7 meV that we use alongside bulk magnetization data to deduce the crystal-electric field (CEF) scheme for the Tm 3+ ions. Random phase approximation (RPA) calculations based on the determined CEF wave functions of the two lowest quasidoublets enable an estimation of the interlayer coupling that is compatible with the experimental INS spectra. No evidence for low-energy spin waves associated to the magnetic order was found, which is consistent with the strongly Ising nature of the ground state.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Isolating p- and n-Doped Fingers With Intrinsic Poly-Si in Passivated Interdigitated Back Contact Silicon Solar Cells

Polycrystalline silicon on silicon oxide (poly-Si/SiO x ) passivating contacts enable ultra high efficiency interdigitated back contact silicon solar cells. To prevent shunt between n- and p-type doped fingers, an insulating region is required between them. We evaluate the use of intrinsic poly Si for this isolation region. Interdigitated fingers were formed by plasma deposition of doped hydrogenated amorphous silicon through mechanically aligned shadow masks, on top of a full-area intrinsic amorphous silicon layer. High temperature annealing then crystallized the a-Si:H to poly Si and drove in the dopants. Two mechanisms were identified which cause contamination of the intrinsic poly Si gap during processing. During deposition of doped fingers, we show using secondary ion mass spectrometry and conductivity measurements that the intrinsic gap becomes contaminated by doped a-Si:H tails several nanometers thick to concentrations of ~10 20 cm -3 . Another source of contamination occurs during high-temperature annealing, where dopants desorb from doped regions and readsorb onto intrinsic a Si:H. Both pathways reduce the resistivity of the intrinsic gap from ~10 5 Ω·cm to ~10 -1 Ω·cm. We show that plasma etching of the a-Si:H surface before crystallizing with a capping layer can eliminate the contamination of the intrinsic poly-Si, maintaining a resistivity of ~10 5 Ω·cm. Lastly, this demonstrates masked plasma deposition as a dopant patterning method for Si solar cells.

14 SOLAR ENERGY↗
DOE OSTI2023

In Situ Imaging of Faujasite Surface Growth Reveals Unique Pathways of Zeolite Crystallization

Zeolite crystallization occurs by complex processes involving a variety of possible mechanisms. The sol gel media used to prepare zeolites leads to heterogeneous mixtures of solution and solid states with diverse solute species. At later stages of zeolite synthesis when growth occurs predominantly from solution, classical two-dimensional nucleation and spreading of layers on crystal surfaces via the addition of soluble species is the dominant pathway. At earlier stages, these processes occur in parallel with nonclassical pathways involving crystallization by particle attachment (CPA). The relative roles of solution- and solid-state species in zeolite crystallization have been a subject of debate. Here, in this work, we investigate the growth mechanism of a commercially relevant zeolite, faujasite (FAU). In situ atomic force microscopy (AFM) measurements reveal that supernatant solutions extracted from a conventional FAU synthesis at various times do not result in growth, indicating that FAU growth predominantly occurs from the solid state through a disorder-to-order transition of amorphous precursors. Elemental analysis shows that supernatant solutions are significantly more siliceous than both the original growth mixture and the FAU zeolite product; however, in situ AFM studies using a dilute clear solution with a lower Si/Al ratio revealed three-dimensional growth of surfaces that is distinct from layer-by-layer and CPA pathways. This unique mechanism of growth differs from those observed in studies of other zeolites. Given that relatively few zeolite frameworks have been the subject of mechanistic investigation by in situ techniques, these observations of FAU crystallization raise the question whether its growth pathway is characteristic of other zeolite structures.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Optimizing Vertical Crystallization for Efficient Perovskite Solar Cells by Buried Composite Layers

Planar-heterojunction perovskite solar cells (PSCs) have experienced rapid evolution in recent years because of the low-temperature processing, suitable alignment, and high mobility of the tin oxide buried contact layer. However, improper SnO 2 surface states and poor crystallinity of the top perovskite films are still the main obstacles for the planar PSCs in which performance always lags behind their mesoporous counterparts. Herein, a new buried contact is reported by introducing graphitic carbon nitride (g-C 3 N 4 ) into the commonly used SnO 2 which performs outstanding transmittance, conductivity, and surface states for a high-quality electron-transporting layer. Moreover, the vertical composition and crystallinity of the top perovskite film are manipulated by rich amino groups on the edge of the g-C 3 N 4 nanosheets which induce the prenucleation of the lead-rich species at the buried interface. Benefiting from the high-quality buried contacts and the optimized perovskite layers, the resultant PSCs achieve a champion efficiency of 21.5% with all photovoltaic parameters enhanced in comparison with their control counterparts (<20%).

planar-heterojunction perovskite solar cells↗