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At least 109 records · Page 6

Achieving clean production with nanostructured coated milling tools dry machining low carbon steel

The advancement of clean production using nanostructured materials in subtractive manufacturing processes has focused on replacing the use of liquid lubrication with solid lubricants coated to conventional cutting tools machining low carbon steel (~ 0.2 wt. % carbon). However, little is known about the wear mechanisms that dominate such tools when coated with functional graded nanostructured coatings. The present study follows an international standard for characterizing such wear (ISO 8688) but uses advanced measurement techniques such as x-ray fluorescence technology to measure the diffusion of chemical species from tool to workpiece and vice versa, that contributes to tool wear with the view to enhance the principles of cleaner production. The results show that when commercially-available tools coated with the appropriate functionally graded industrial coating, diffusion does not take place and creates an effective chemical barrier during machining. The experimental methods used in the study include machining workpieces using a CNC milling machine, tachometer for measuring spindle speed, dynamometer for measuring cutting forces, infra-red camera for measuring cutting temperatures, chemical species diffusion wear using x-ray florescence detector, and an optical microscope for measuring tool wear. Coupled with the physical measurement of wear, it is concluded that mechanical wear dominates the milling of a low carbon steel and that thermal properties of the coatings do not correlate with such wear. It is also concluded that flank wear as a function of volume of workpiece removed and machining duration (machining index) is a sound method for assessing the transition of the stages of wear during clean machining operations. The present study not only has implication for the design of better cutting tools, but also advances dry machining processes that eliminate the use of liquid lubricants making subtractive production processes cleaner. The main conclusions drawn from this study show that coated tools have a longer life under dry conditions compared to uncoated tools and that there is no correlation between coating properties and tool wear. In conclusion, diffusion of chemical species into the cut chips did not occur because of the lack of thermally induced chemical wear of the cutting tool and that wear is caused by the gradual erosion of the flank face due to the chip abrading the cutting tool.

36 MATERIALS SCIENCE↗

Comparison of time-resolved photoluminescence and deep-level transient spectroscopy defect evaluations in an InAs nBn detector subjected to in situ and ex situ 63 MeV proton irradiation

Deep-level transient spectroscopy and temperature-dependent time-resolved photoluminescence experiments are performed on identical InAs nBn photodetector structures as a function of in situ and ex situ 63 MeV proton irradiation to assess their generation and recombination dynamics. Pre-irradiation, the n-type InAs absorbing region, exhibits a steadily increasing minority carrier lifetime with increasing temperature, providing evidence that excited minority carriers may be recombining via shallow defect levels. From deep-level transient spectroscopy, two features are found between 10 and 275 K: a low temperature broad “shoulder,” which suggests emission from multiple shallow electron defect levels with energies <29 meV and a high temperature minimum occurring at ∼230 K with an activation energy of 539 meV, which suggests a defect in the barrier layer in the device. Two similar nBn detectors are then subjected to 63 MeV proton irradiation in step doses and measured between steps. One experiment is performed in situ with an nBn held at ∼10 K during dosing, and the other experiment is performed ex situ with a similar nBn held at room temperature for dosing. The ex situ dosing results in an evaluation of the defect introduction rate that is three to four times lower than in situ due to partial annealing of the proton-induced displacement damage at room temperature. The results of these two experiments are then compared with the dose-dependent recombination rate analysis, resulting in an estimated recombination defect cross section of 1.6 × 10 −13 cm 2 for the shallow shoulder defect.

Carrasco, Rigo A. [Air Force Research Laboratory (↗

Ultrasensitive Room Temperature Infrared Photodetection Using a Narrow Bandgap Conjugated Polymer

Abstract Photodetectors operating across the short‐, mid‐, and long‐wave infrared (SWIR–LWIR, λ = 1–14 µm) underpin modern science, technology, and society in profound ways. Narrow bandgap semiconductors that form the basis for these devices require complex manufacturing, high costs, cooling, and lack compatibility with silicon electronics, attributes that remain prohibitive for their widespread usage and the development of emerging technologies. Here, a photoconductive detector, fabricated using a solution‐processed narrow bandgap conjugated polymer is demonstrated that enables charge carrier generation in the infrared and ultrasensitive SWIR–LWIR photodetection at room temperature. Devices demonstrate an ultralow electronic noise that enables outstanding performance from a simple, monolithic device enabling a high detectivity ( D *, the figure of merit for detector sensitivity) >2.44 × 10 9 Jones (cm Hz 1/2 W −1 ) using the ultralow flux of a blackbody that mirrors the background emission of objects. These attributes, ease of fabrication, low dark current characteristics, and highly sensitive operation overcome major limitations inherent within modern narrow–bandgap semiconductors, demonstrate practical utility, and suggest that uncooled detectivities superior to many inorganic devices can be achieved at high operating temperatures.

36 MATERIALS SCIENCE↗

Impact of selenium addition to the cadmium-zinc-telluride matrix for producing high energy resolution X-and gamma-ray detectors

Abstract Both material quality and detector performance have been steadily improving over the past few years for the leading room temperature radiation detector material cadmium-zinc-telluride (CdZnTe). However, although tremendous progress being made, CdZnTe still suffers from high concentrations of performance-limiting defects, such as Te inclusions, networks of sub-grain boundaries and compositional inhomogeneity due to the higher segregation coefficient of Zn. Adding as low as 2% (atomic) Se into CdZnTe matrix was found to successfully mitigate many performance-limiting defects and provide improved compositional homogeneity. Here we report record-high performance of Virtual Frisch Grid (VFG) detector fabricated from as-grown Cd 0.9 Zn 0.1 Te 0.98 Se 0.02 ingot grown by the Traveling Heater Method (THM). Benefiting from superior material quality, we achieved superb energy resolution of 0.77% at 662 keV (as-measured without charge-loss correction algorithms) registered at room temperature. The absence of residual thermal stress in the detector was revealed from white beam X-ray topographic images, which was also confirmed by Infra-Red (IR) transmission imaging under cross polarizers. Furthermore, neither sub-grain boundaries nor their networks were observed from the X-ray topographic image. However, large concentrations of extrinsic impurities were revealed in as-grown materials, suggesting a high likelihood for further reduction in the energy resolution after improved purification of the starting material.

36 MATERIALS SCIENCE↗

A new neutron time-of-flight detector for yield and ion-temperature measurements in DT implosions on OMEGA

A new neutron time-of-flight (nTOF) detector for yield and ion-temperature measurements in deuterium–tritium (DT) implosions was designed, installed, and calibrated on the OMEGA Laser System. This detector was installed at θ = 46.8° from the vertical and φ = 84.9°, previously a region without other detectors, in order to decrease the uncertainty of low-mode asymmetry measurements by six other nTOF detectors. The new nTOF detector uses the “PMT only” concept [Glebov et al., Rev. Sci. Instrum. 92, 013509 (2021)] and consists of a Photek photomultiplier tube (PMT)-110 in a thin aluminum housing. There is no lead shielding in front of the PMT to allow measurements of the x-ray instrument response function of the detector. The detector is installed in the OMEGA H2-port line of sight at 9.3 m from the target chamber center in the OMEGA Target Bay and is called the H2 nTOF detector. The H2 nTOF measures DT yields in the 1 × 10 13 to 3 × 10 14 range and ion temperatures from 2 to 12 keV. H2 nTOF reduced the hotspot flow uncertainty in the z-direction from ±10 to ±8 km/s, and the uncertainty in the anisotropic flow axis from σ θ = ±26° to ±13° and σ φ = ±25° to ±21°. Here, the design details, performance, and calibration results of the H2 nTOF detector in DT implosions on OMEGA will be presented.

Laser fusion↗

Identification and Suppression of Point Defects in Bromide Perovskite Single Crystals Enabling Gamma‐Ray Spectroscopy

Abstract Methylammonium lead tribromide (MAPbBr 3 ) stands out as the most easily grown wide‐band‐gap metal halide perovskite. It is a promising semiconductor for room‐temperature gamma‐ray ( γ ‐ray) spectroscopic detectors, but no operational devices are realized. This can be largely attributed to a lack of understanding of point defects and their influence on detector performance. Here, through a combination of crystal growth design and defect characterization, including positron annihilation and impedance spectroscopy, the presence of specific point defects are identified and correlated to detector performance. Methylammonium (MA) vacancies, MA interstitials, and Pb vacancies are identified as the dominant charge‐trapping defects in MAPbBr 3 crystals, while Br vacancies caused doping. The addition of excess MABr reduces the MA and Br defects and so enables the detection of energy‐resolved γ ‐ray spectra using a MAPbBr 3 single‐crystal device. Interestingly, the addition of formamidinium (FA) cations, which converted to methylformamidinium (MFA) cations by reaction with MA + during crystal growth further reduced MA defects. This enabled an energy resolution of 3.9% for the 662 keV 137 Cs line using a low bias of 100 V. The work provides direction toward enabling further improvements in wide‐bandgap perovskite‐based device performance by reducing detrimental defects.

Ni, Zhenyi↗

Oxidation of Silicon Carbide with Atomic Oxygen through the Passive-to-Active Transition

The inelastic and reactive scattering dynamics of O( 3 P) atoms on a 6H-silicon carbide (SiC) surface were investigated as a function of temperature with a molecular beam-surface scattering technique that employed a rotatable mass spectrometer detector. One set of experiments used a pulsed hyperthermal beam that produced ~8 km s –1 O atoms, and another set of experiments used a continuous beam that contained O atoms with a nominal velocity of ~2 km s –1 . When exposed to the relatively low-flux, pulsed hyperthermal O-atom beam, a passive oxide layer on the SiC that formed at lower temperatures decomposed as the temperature increased above 1673 K. Instead of entering an active oxidation regime, a graphitic layer formed on the surface and largely protected the underlying SiC from incoming O atoms. Investigation of the oxide decomposition without O-atom bombardment revealed volatile Si and SiO products at the moment that the oxide decomposed, implying that Si sublimation occurs concurrently with oxide decomposition. In the experiment with the continuous (higher flux) O-atom beam, volatile SiO and CO products were observed after the passive oxide decomposed, indicating that active oxidation was reached. Finally, the results of this study provide evidence for the importance of Si sublimation within the active oxidation regime. Above the passive-to-active transition temperature, Si sublimation is an ongoing process, and continuous active oxidation will only occur if sufficient oxygen reacts with the surface to produce SiO more quickly than a graphitic layer can form. Thus, accurate models of SiC ablation by atomic oxygen must account for multiple competing mechanisms that depend on the surface temperature and incident O-atom flux.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Phonon-mediated quantum efficiency measurement in semiconductors

Accurate quantum efficiency measurement not only provides crucial information for the photovoltaic cell industry but also supports experiments aimed at directly detecting dark matter and elastic neutrino interactions. The dark matter direct searches paradigm has recently expanded to include particles with masses below 1,MeV/c2, where the expected signal in an electron–recoil interaction is approximately in the eV range, just above the energy gap for silicon and germanium. A robust calibration method for ionization signals in this lower energy region is essential. This paper presents a method for measuring quantum efficiency and yield (q/E) in semiconductors using phonon-mediated calorimetry. The Neganov–Trofimov–Luke phonon amplification method in low-temperature semiconductor crystals has been employed to indirectly measure ionization down to single-electron accuracy. Specifically, at zero bias, the phonon readout directly quantifies the total energy deposited within the detector, independent of the ionization yield. This eliminates a significant source of systematic uncertainty in quantum efficiency estimates associated with total energy uncertainty. The paper includes results from an updated ionization efficiency measurement in a germanium detector.

Physics↗

Controlling T c of iridium films using the proximity effect

A superconducting Transition-Edge Sensor (TES) with low-$T_c$ is essential in a high resolution calorimetric detection. With a motivation of developing sensitive calorimeters for applications in cryogenic neutrinoless double beta decay searches, we have been investigating methods to reduce the $T_c$ of an Ir film down to 20 mK. Utilizing the proximity effect between a superconductor and a normal metal, we found two room temperature fabrication recipes of making Ir-based low-$T_c$ films. In the first approach, an Ir film sandwiched between two Au films, a Au/Ir/Au trilayer, has a tunable $T_c$ in the range of 20-100 mK depending on the relative thicknesses. In the second approach, a paramagnetic Pt thin film is used to create Ir/Pt bilayer with a tunable $T_c$ in the same range. We present detailed study of fabrication and characterization of Ir-based low-$T_c$ films, and compare the experimental results to theoretical models. We show that Ir-based films with predictable and reproducible critical temperature can be consistently fabricated for use in large scale detector applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

RHIC Recovery Review Report [See also: RHIC Recovery Review - Hybrid Meeting (11/28/2023) - Indico.bnl.gov]

Just after 12:30 PM on August 1, 2023, the RHIC superconducting magnet quench system triggered and consequently the energy dump resistors were switched into the blue ring quad and dipole circuits and the interaction region DX dipole heaters were switched on. This was a spurious trip (there was no actual quench) and was not unusual as the outdoor summer temperature often caused the quench detectors to cause such trips. The collider control room notified the on-duty cryogenics technical staff of the quench trip. A short time later building 1004B cryogenic low-helium and valve box insulation vacuum failure alarms were observed. The cryogenics technical staff observed the cryo-relief line from the blue ring valve box was exhausting helium outside the building.

43 PARTICLE ACCELERATORS↗

A 4 x 4 SiPM Sensor Array with Fast Preamplified Output Engineered for the PWO Detectors of the EIC EEEMCAL

The PbWO4 scintillation detectors for the Electron-Ion Collider Electron Endcap Electromagnetic Calorimeter (EEEMCAL) cannot use vacuum photomultipler tubes due to the high magnetic field environment. We are presenting a readout solution with a 4 x 4 SiPM array directly coupled to a preamplification and summing stage. A second amplification stage with variable gain and offset adjustments is also included in the compact electronics module. The integrated power supply feeds the signal processing chain and the adjustable bias control. The parameter settings are saved locally on a EEPROM and are adjustable via the integrated communication interface through USB or RS485. The design was optimized to maximize signal collection energy resolution, for fast timing and wide dynamic range while keeping a small footprint with low power consumption and heat dissipation. The output response is fast enough to meet the 100 ? 200 ns digitization gate requirements for the detector. The electronics assembly requires no active cooling and includes a temperature sensor and a gain compensation of thermal variations which are important features for stable operation in large scale detector structures. A detector prototype was constructed with 20 mm x 20 mm x 200 mm PWO crystals affixed with individual SiPM array readouts and arranged in a 3 x 3 array. This detector was tested at the Thomas Jefferson National Accelerator Facility with 5GeV positrons. We will present the results of these detector characterization measurements.

Philip, O.↗

High spatial resolution direct conversion amorphous selenium X-ray detectors with monolithically integrated CMOS readout

Recent progress in the field of micron-scale spatial resolution direct conversion X-ray detectors for high-energy synchrotron light sources serve applications ranging from nondestructive and noninvasive microscopy techniques which provide insight into the structure and morphology of crystals, to medical diagnostic measurement devices. Amorphous selenium ( a -Se) as a wide-bandgap thermally evaporated photoconductor exhibits ultra-low thermal generation rates for dark carriers and has been extensively used in X-ray medical imaging. Being an amorphous material, it can further be deposited over large areas at room temperatures and at substantially lower costs as compared to crystalline semiconductors. Here, to address the demands for a high-energy and high spatial resolution X-ray detector for synchrotron light source applications, we have thermally evaporated a -Se on a Mixed-Mode Pixel Array Detector (MM-PAD) Application Specific Integrated Circuit (ASIC). The ASIC format consists of 128 × 128 square pixels each 150 μm on a side. A 200 μm a -Se layer was directly deposited on the ASIC followed by a metal top electrode. The completed detector assembly was tested with 45 kV Ag and 23 kV Cu X-ray tube sources. The detector fabrication, performances, Modulation Transfer Function (MTF) measurements, and simulations are reported.

36 MATERIALS SCIENCE↗

Anomalous Loss Reduction Below Two‐Level System Saturation in Aluminum Superconducting Resonators

Superconducting resonators are widely used in many applications such as qubit readout for quantum computing, and kinetic inductance detectors. These resonators are susceptible to numerous loss and noise mechanisms, especially the dissipation due to two-level systems (TLS) which become the dominant source of loss in the few-photon and low temperature regime. In this study, capacitively-coupled aluminum half-wavelength coplanar waveguide resonators are investigated. Surprisingly, the loss of the resonators is observed to decrease with a lowering temperature at low excitation powers and temperatures below the TLS saturation. This behavior is attributed to the reduction of the TLS resonant response bandwidth with decreasing temperature and power to below the detuning between the TLS and the resonant photon frequency in a discrete ensemble of TLS. When response bandwidths of TLS are smaller than their detunings from the resonance, the resonant response and thus the loss is reduced. At higher excitation powers, the loss follows a logarithmic power dependence, consistent with predictions from the generalized tunneling model (GTM). A model combining the discrete TLS ensemble with the GTM is proposed and matches the temperature and power dependence of the measured internal loss of the resonator with reasonable parameters.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Design of a Cryogenic Scintillation Neutrino Detector at the Spallation Neutron Source

We successfully verified in the following three aspects the feasibility of using a cryogenic scintillating crystal-based neutrino detector at the Spallation Neutron Source (SNS), Oak Ridge National Laboratory, for the detection of low-mass dark matter particles and non-standard neutrino interactions (NSIs), as part of the detector R&D effort of the COHERENT experiment. First, we demonstrated the possibility of using silicon photomultipliers (SiPMs) at cryogenic temperatures to replace traditional photomultiplier tubes (PMTs) as light sensors. Second, we verified that the high light yield of undoped CsI crystals measured above 13 keVee at 77 K still holds down to 5.9 keVee. Third, we successfully measured nuclear quenching factor of undoped cryogenic CsI at the Triangle Universities Nuclear Laboratory with the help from our Duke collaborators. The first achievement resulted in a publication in European Physics Journal C. The second resulted in an arXiv pre-print, which is under journal review. The last one indicates that the performance of the proposed detector may be better than what was assumed in the literature. The analysis is in the final stage and will result in another journal publication. In addition, two graduate students involved in this project graduated with master’s degrees during the project period. Both decided to continue their research as PhD students. One open-source data analysis code package was created and is publicly available on GitHub. A set of tutorials about Monte Carlo simulation of radiation interacting with detectors were created on YouTube, receiving more than 100,000 views.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Design and implementation of a portable diagnostic system for Thomson scattering and optical emission spectroscopy measurements

A diagnostic system, which has a design goal of high-portability, has been designed at Oak Ridge National Laboratory (ORNL). This project aims at providing measurements of key plasma parameters (ne, Te, ni, Ti) for fusion-relevant devices, utilizing Thomson scattering (TS) and optical emission spectroscopy (OES). The innovative design employs mostly commercial off-the-shelf instrumentation and a traveling team of researchers to conduct measurements at various magnetic-confinement plasma devices. The TS diagnostic uses a Quantel Q-smart 1500 Nd:YAG laser with a 2ω harmonic generator to produce up to 850 mJ of 532 nm laser pulses at 10 Hz. Collection optics placed at the detection port consists of an 11 × 3 optical fiber bundle, where the TS diagnostic uses an 11 × 1 subset array of the fibers, the OES diagnostic uses another 11 fibers, and the remaining fibers are available to the host institution. The detection system is comprised of two separate IsoPlane-320 spectrometers with triple-grating turrets of various line spacing and two PI-MAX 4 intensified CCD detectors, used simultaneously to measure a broad range of ion, impurity, and electron parameters. The self-contained diagnostic package also includes a data processing and storage system. The design and initial implementation of the TS-OES diagnostic system are described. The experiments from the proof-of-principle operation of the portable package on a high density (∼2.5 × 1022 m−3) and low-temperature (∼5 eV) electrothermal arc source at ORNL are also discussed.

Kafle, N. (ORCID:000000028144787X)↗

Thin-Entrance Window Process for Soft X-Ray Sensors

New free electron lasers, such as SLAC’s LCLS-II, will provide unique scientific imaging opportunities. In order to fully utilize these facilities, we need to develop detectors with shallow entrance windows that will enable detection of soft x-rays from 250 eV to 1.5 KeV. Achieving adequately shallow entrance windows is challenging because the high temperature anneal needed to activate the dopant also drives the dopant profile deeper, growing the region that is insensitive to soft x-rays. A new microwave annealing technology provides an efficient way to achieve shallow entrance windows in fully depleted high-resistivity silicon sensors. The microwave anneal technique can activate dopants at low substrate temperature, with minimal dopant diffusion, and can be used to fabricate both n-type and p-type entrance windows. SRP and SIMS measurements were used to verify dopant activation with negligible dopant diffusion. We then applied the microwave anneal process to a planar sensor wafer, using the new process to create the backside diode contact. Electrical test of the resulting sensors shows good reverse bias characteristics. The sensors have been bump-bonded to a read-out ASIC and used successfully to measure an Fe-55 x-ray spectrum. Process and device simulations were performed to characterize the quantum efficiency of the entrance window for soft x-rays. This technique is useful for other sensor applications requiring a shallow entrance window, including detectors for UV photons, low energy ions and low energy electrons.

47 OTHER INSTRUMENTATION↗

Cadmium Magnesium Telluride for Next Generation X-Ray Free Electron Laser, Synchrotron and Many Other Applications

We developed a picosecond photodetector based on our Bridgman grown and specially engineered Cadmium Magnesium Telluride (Cd 1-x Mg x Te) single crystal that is sensitive to both optical and x-ray pulses for coarse timing in Free Electron Laser applications. Cd 1-x Mg x Te is a wide bandgap semiconductor material with potential applications, not only in optoelectronics, but also in particle physics as an intense pulse radiation detector for bremsstrahlung, X-ray/gamma ray radiation, thermal neutrons, and medical imaging. However, for femtosecond optical and x-ray cross correlation, the material has to have very short lifetime, a condition that is opposite to that required for nuclear spectroscopy applications. At the same time, the material also needs to have very low bulk leakage current, in the 0.10 pA range. Hence the ability to tailor or engineer the material is very crucial. In this paper, picosecond response and the crystal growth of this specially engineered cadmium magnesium telluride material will be presented. Other material characterization and transient measurements will also be discussed along with room temperature semiconductor detector performance for other nuclear radiation detection applications.

36 MATERIALS SCIENCE↗

Quality concerns caused by quality control — deformation of silicon strip detector modules in thermal cycling tests

The ATLAS experiment at the Large Hadron Collider (LHC) is currently preparing to replace its present Inner Detector (ID) with the upgraded, all-silicon Inner Tracker (ITk) for its High-Luminosity upgrade (HL-LHC). The ITk will consist of a central pixel tracker and the outer strip tracker, consisting of about 19,000 strip detector modules. Each strip module is assembled from up to two sensors, and up to five flexes (depending on its geometry) in a series of gluing, wirebonding and quality control steps. During detector operation, modules will be cooled down to temperatures of about -35 °C (corresponding to the temperature of the support structures on which they will be mounted) after being initially assembled and stored at room temperature. In order to ensure compatibility with the detector's operating temperature range, modules are subjected to thermal cycling as part of their quality control process. Ten cycles between -35 °C and +40 °C are performed for each module, with full electrical characterisation tests at each high and low temperature point. As part of an investigation into the stress experienced by modules during cooling, it was observed that modules generally showed a change in module shape before and after thermal cycling. This paper presents a summary of the discovery and understanding of the observed changes, connecting them with excess module stress, as well as the resulting modifications to the module thermal cycling procedure.

47 OTHER INSTRUMENTATION↗