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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6

Direct Conversion of Ethane to Oxygenates, Ethylene, and Hydrogen in a Noncatalytic Biphasic Plasma Microreactor

We selectively upgrade ethane (C 2 H 6 ) to ethanol (C 2 H 5 OH), methanol (CH 3 OH), and acetic acid (CH 3 COOH) in a catalyst-free, continuous, argon/water biphasic plasma microreactor. The water (H 2 O) evaporates and electron- dissociates into OH· radicals. OH· recombines with alkyl radicals, produced via electron dissociation of ethane, to generate the oxygenates that absorb into H 2 O. A plasma-assisted path, reminiscent of the low-temperature thermocatalytic ethane steam reforming, leads to significant H 2 coproduction. The gaseous stream also comprises CO 2 and C 2 H 4 . Up to 1.3 and 1 μmol min –1 of liquid C 2 H 5 OH and CH 3 OH are attained, respectively. Compared to CO 2 -assisted ethane plasma conversion, which produces many oxygenates with low selectivity, the carbon selectivity can range from >70% C 2 H 5 OH, CH 3 OH, and CH 3 COOH to 60% C 2 H 4 . Furthermore, the low carbon footprint, electrified, modular, intensified process using a reactive evaporation and separation plasma could pave the way for the valorization of underutilized shale gas resources in remote areas.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Elimination of remnant phases in low-temperature growth of wurtzite ScAlN by molecular-beam epitaxy

Growth of wurtzite ScxAl1−xN (x < 0.23) by plasma-assisted molecular-beam epitaxy on cplane GaN at high temperatures significantly alters the extracted lattice constants of the material due to defects likely associated with remnant phases. In contrast, ScAlN grown below a composition-dependent threshold temperature exhibits uniform alloy distribution, reduced defect density, and atomic-step surface morphology. The c-plane lattice constant of this low-temperature ScAlN varies with composition as expected from previous theoretical calculations and can be used to reliably estimate alloy composition. Moreover, lattice-matched Sc0.18Al0.82N/GaN multiquantum wells grown under these conditions display strong and narrow near-infrared intersubband absorption lines that confirm advantageous optical and electronic properties.

Dzuba, Brandon↗

Deriving reliable nucleation rates from metadynamics simulations: Application to Yukawa fluids

In order to solidify the usefulness of metadynamics in studying nucleation of crystals from supercooled liquids, this work provides a specific procedure to calculate nucleation free energy barriers. After a pedagogical review of the important elements of classical nucleation theory and how metadynamics is used to find nucleation free energy barriers, we explain the benefits of local collective variables over more common global collective variables. We show how a metadynamics free energy barrier must be carefully post-processed so that classical nucleation theory can be applied to calculate nucleation rates. We apply our procedure to a Yukawa plasma and show that a particular physically motivated fit to metadynamics data reproduces low-temperature reference data, justifying the usefulness of metadynamics to predict nucleation rates.

42 ENGINEERING↗

Elimination of remnant phases in low-temperature growth of wurtzite ScAlN by molecular-beam epitaxy

We report growth of wurtzite Sc x Al 1-x N (x < 0.23) by plasma-assisted molecular-beam epitaxy on c-plane GaN at high temperatures significantly alters the extracted lattice constants of the material due to defects likely associated with remnant phases. In contrast, ScAlN grown below a composition-dependent threshold temperature exhibits uniform alloy distribution, reduced defect density, and atomic-step surface morphology. The c-plane lattice constant of this low-temperature ScAlN varies with composition as expected from previous theoretical calculations and can be used to reliably estimate alloy composition. Moreover, lattice-matched Sc 0.18 Al0 .82 N/GaN multi-quantum wells grown under these conditions display strong and narrow near-infrared intersubband absorption lines that confirm advantageous optical and electronic properties.

36 MATERIALS SCIENCE↗

Single-beam plasma source deposition of carbon thin films

A single-beam plasma source was developed and used to deposit hydrogenated amorphous carbon (a-C:H) thin films at room temperature. The plasma source was excited by a combined radio frequency and direct current power, which resulted in tunable ion energy over a wide range. The plasma source could effectively dissociate the source hydrocarbon gas and simultaneously emit an ion beam to interact with the deposited film. Using this plasma source and a mixture of argon and C 2 H 2 gas, a-C:H films were deposited at a rate of ~26 nm/min. The resulting a-C:H film of 1.2 µm thick was still highly transparent with a transmittance of over 90% in the infrared range and an optical bandgap of 2.04 eV. Young’s modulus of the a-C:H film was ~80 GPa. The combination of the low-temperature high-rate deposition of transparent a-C:H films with moderately high Young’s modulus makes the single-beam plasma source attractive for many coatings applications, especially in which heat-sensitive and soft materials are involved. Here, the single-beam plasma source can be configured into a linear structure, which could be used for large-area coatings.

14 SOLAR ENERGY↗

Selectively patterned Mg-doped GaN by SiN x -driven hydrogen injection

In this work, we demonstrate a method to achieve selectively patterned Mg-doped GaN layers using hydrogen drive-in through plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiN x ) films. Activated Mg-doped GaN layers were selectively deactivated by patterned PECVD SiN x films with low-temperature annealing and showed high-resistive behavior. Spatially resolved photoluminescence measurements were used to optically verify the deactivation of Mg acceptors and showed distinct features corresponding to activated and deactivated Mg in GaN. The method suggested here provides a simple and effective method to achieve patterned Mg-doped GaN regions without thermal and plasma damage, which could cause degradation of device performance. The proposed method could provide a way to achieve future high-performance GaN lateral and vertical devices that rely on laterally patterned doping.

42 ENGINEERING↗

Radiation Damage Analysis of FNSF Components Using McCad and MCNP

The Fusion Energy System Studies Fusion Nuclear Science Facility (FESS-FNSF) concept represents a transitional step between ITER and a commercial fusion power plant. The FNSF is a conceptualized D-T fueled tokamak with 518 MW of fusion power that has been extensively used to explore and optimize design features. The energetic 14.1-MeV neutrons can produce significant localized heating and activations, and can cause damage to plasma-facing components, which can determine maintenance/outage scheduling needs and also impact the lifetime of the device as a whole. This study illustrates a neutronics analysis that was conducted on a 22.5-degree symmetric sector of the FNSF with the goal of understanding the neutron heating and radiation damage that can be characterized by quantifying the displacements per atom (dpa). Concurrently, this study also focused on the development of analysis capabilities by converting a three-dimensional computer-aided design model of the FNSF into MCNP6.2 input using the McCad code. Accordingly, some confirmatory results on tritium production and the tritium breeding ratio (TBR) are provided to support model validation. The results produced by MCNP6.2 simulations showed that the highest heating and damage occurred in the outboard region, which concentrated approximately 290 MW of the total nuclear heating, in contrast to 97 MW within the inboard region. These results are consistent with previous studies that employed earlier versions of the FNSF concept and different modeling approaches. Furthermore, this study also provides additional details on neutron wall loading, as well as total heating from neutrons and gammas, results which show the total heating of the device (16 sectors) is approximately 477.83 ± 0.80% MW, indicating a neutron energy multiplication factor of 1.15. Additionally, the capability to calculate hydrogen and helium production, as well as dpa, is illustrated. Finally, the neutronics effects of using alternative materials to tungsten carbide were evaluated for the vacuum vessel, low-temperature shield, and structural ring components, which showed that compounds like YH 2 , Mg(BH 4 ) 2 , and ZrH 2 could reduce the total heating on the magnet and also reduce the TBR.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Plasma-assisted chemical-looping combustion: Mechanistic insights into low temperature methane oxidation with CuO

The low-temperature oxidation of CH 4 by CuO in a coaxial, fixed bed, double dielectric barrier discharge (DBD) reactor was investigated with time-dependent species measurements by an electron-ionization molecular beam mass spectrometer (EI-MBMS). In the experiment, 10% methane carried by noble gasses was flown at 50 sccm through 1 g CuO dispersed in quartz wool both under plasma and non-plasma conditions, while time-dependent gas-phase species profiles were collected. Plasma conditions were explored from 300 to 600 °C while the non-plasma conditions were set from 300 to 900 °C. Mechanistic insights into the oxidation of CH 4 by CuO with plasma discharge at lower temperatures (≤ 600 °C) were obtained by quantifying the fuel oxidation, intermediate species, and CO 2 production in comparison to the non-plasma conditions. Here, we observed significant enhancement of fuel oxidation from the plasma discharge between 400 and 500 °C. The CO 2 production at 500 °C with plasma was greater than that at 700 °C without plasma, reducing fuel oxidation temperature by 200+ °C. During tests, three distinct reaction stages were observed: a gas-phase transport limited stage, a surface reaction limited kinetic stage, and an oxygen ion diffusion limited stage. It was observed that plasma greatly improved the reactivity of the second stage at low temperature. In addition, no carbon deposits were observed on the resultant particles, even under the presence of plasma. M. species such as C 4 H 2 and C 6 H 6 not previously observed or predicted in CuO/CH 4 chemical looping were observed, with some species such as CH 3 OH only becoming detectable as total flowrate was increased from 50 to 1500sccm. A non-plasma reaction pathway for CH 4 based the observed species from the MBMS spectrum and previous predictions from reactive molecular dynamics simulations was created, providing a framework from which more complex plasma CuO mechanisms can be crafted from.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DISTRIBUTION OF ION-EXCHANGEABLE RARE EARTH ELEMENTS AND CRITICAL MINERALS IN COAL-HOSTED CLAYS OF THE POWDER RIVER BASIN, WY

Increasing demand for a more robust domestic supply of rare earth elements (REE) and critical minerals (CM) has led to significant investigation into unconventional sources. Coal and coal byproducts from the Powder River Basin (PRB) of Wyoming are potential sources of REE but lack complete characterization of mineral hosts including ion-adsorption clays (IACs). IACs, which provide a substantial portion of the global REE supply, form when hydrated REE complexes are physiosorbed to negatively charged sites on clay surfaces. Typical IAC minerals include kaolinite, illite, and smectite. REE complexes are easily leached from IACs via ion exchange, making them economically attractive. However, research regarding the partitioning behaviors of strategic metals into PRB coal-hosted clays is limited. This project aims to quantify the modes of occurrence and distribution of REE and CM in clay minerals derived from PRB coals. Strategic metals investigated in this project have historic production or promising deposits within the PRB and/or high anticipated supply risk, and include: REE (lanthanides and Y), V, Ti, platinum group elements (PGE; Pt, Pd, Rh, Ru, Ir, Os), Al, Co, Ga, Zr, and W. Semi-quantitative compositional data from portable x-ray fluorescence spectroscopy (pXRF) on coal core from the PRB is consistent with the known correlation between REE and Al content, suggesting increased REE abundance will be found in clay-rich units. pXRF data also identifies elevated V, Ti, Co, and Zr correlated with Al. Preliminary x-ray diffraction (XRD) data indicates kaolinite, illite, and dickite are abundant minerals in overburden and clay-rich partings. Quantitative analysis via inductively coupled plasma mass spectrometry (ICP-MS) provides insights into REE and CM fractionation in coals as we compare trace metal occurrence to variations in mineralogy. Additionally, we apply scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS) data to correlate clay size and morphology to trace metal occurrence. Our findings supplement a broader effort to couple REE and CM extraction with existing domestic coal production and contribute to the fundamental understanding of adsorption processes that occur in low-temperature basin environments.

Stuart, Sophia↗

REBCO Insert Coils toward High-Field, Large-Bore Magnet for Quantum Physics Research

High-temperature superconducting (HTS) magnets offer a promising solution for generating high magnetic fields efficiently and economically, serving as a vital component in nextgeneration scientific instruments and carbon-neutral power systems, notably in cost-effective compact fusion reactors. These high magnetic fields play a pivotal role in advancing research on quantum materials, particularly in elucidating the intricate electronic states near magnetic phase transitions. Here, this paper delves into the research conducted at the Princeton Plasma Physics Laboratory, which is divided into three phases aimed at overcoming technical hurdles in creating large-bore, high-field HTS magnets for cutting-edge quantum physics research. In Phase 1, we designed, constructed, and tested a compact REBCO solenoidal magnet comprising six double-pancake coils featuring a 41.3-mm inner diameter and a 70.0-mm outer diameter. It adopts a no-insulation approach to ensure electrical and thermal stability. Successful testing in a saturated liquid nitrogen bath confirmed its capability to generate a 0.8-T field at 77 K and 2 T at 65 K, with ongoing integration into liquid helium testing. Building on this experience, Phase 2 involves the design of an HTS insert coil, intended to nest within a 12-T low-temperature superconducting (LTS) outsert to achieve a minimum of 20 T at 4.2 K. The focus of Phase 2 centers on addressing challenges posed by screening-current (SC) effects, particularly the associated stress/strain issues. Employing a numerical model that fully couples the SC and mechanical analysis, we discuss strategies for managing stress to mitigate the effects of SCinduced stress concentrations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Plasma-Enhanced Atomic Layer Deposition Synthesis of Nanolayered Molybdenum Diselenide (MoSe 2 ) Thin Films for Nanoelectronics

Nanolayered molybdenum diselenide (MoSe 2 ) thin films were synthesized by plasma-enhanced atomic layer deposition (PE-ALD) using molybdenum pentachloride (MoCl 5 ) and diethyldiselenide (C 4 H 10 Se 2 ) precursors. Scanning and transmission electron microscopy revealed horizontally stacked nanolayers near the substrate and vertically oriented nanosheets at the surface of the film. X-ray diffraction confirmed the (002), (100), and (110) reflections of crystalline MoSe 2 , while X-ray photoelectron spectroscopy showed relative atomic concentrations of 33.5% Mo and 66.5% Se, consistent with stoichiometric MoSe 2 . Raman spectra exhibited characteristic E 1g , A 1g , and E$^1_{2g}$ vibrational modes. Field-effect transistors incorporating PE-ALD-grown MoSe 2 as the channel material displayed p-type behavior, demonstrating the potential of nanolayered MoSe 2 for nanoelectronic applications. This work demonstrates the feasibility of low-temperature, stoichiometric growth of nanolayered MoSe 2 by PE-ALD and its direct integration into transistor architectures.

36 MATERIALS SCIENCE↗

Gaussian-process generative model for the QCD equation of state

We develop a generative model for the nuclear matter equation of state at zero net baryon density using the Gaussian process regression method. We impose first-principles theoretical constraints from lattice quantum chromodynamics and hadron resonance gas at high- and low-temperature regions, respectively. By allowing the trained Gaussian process regression model to vary freely near the phase transition region, we generate random smooth crossover equations of state with different speeds of sound that do not rely on specific parametrizations. Here, we explore a collection of experimental observable dependencies on the generated equations of state, which paves the groundwork for future Bayesian inference studies to use experimental measurements from relativistic heavy-ion collisions to constrain the nuclear matter equation of state.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Electrified vapour deposition at ultrahigh temperature and atmospheric pressure for nanomaterials synthesis

Vapour-phase synthesis methods have shown promise for the scalable synthesis of nanomaterials and coatings. However, the vaporization of different precursors for the synthesis of a broad nanomaterial space, particularly at atmospheric pressure, while maintaining compositional and structural control of the final product is challenging. Here we report the generation of an ultrahigh-temperature atomic vapour at atmospheric pressure based on electrified heating, for the growth of multi-elemental nanomaterials and thin films. This process relies on a reactor design whereby solid-state precursors are vaporized within a semi-confined space beneath an electrified heater that can reach ~3,000 K. The proximity of the heater rapidly breaks down the bonds of metal salt precursors and decomposes them into an atomic vapour that expands into a high-temperature (>2,000 K), highly reactive and high-flux vapour (10 21 –10 22 atoms per cm 2 per second) that travels upwards in a directional flow. When mixed with entrained ambient gases, the highly reactive atomic species rapidly nucleate and grow into the desired final products, including alloys, oxides, sulfides and thin films, which can be deposited on a low-temperature substrate. This EVD approach can synthesize a broad range of functional nanomaterials at atmospheric pressure, including single-phase multi-elemental nanomaterials formed under thermodynamically non-equilibrium conditions.

36 MATERIALS SCIENCE↗

Plasma assisted NH 3 /H 2 /air ignition in nanosecond discharges with non-equilibrium energy transfer

Ammonia (NH 3 ), with its high energy density and easiness to store and transport as a hydrogen carrier, has become a promising alternative green fuel. However, its adoption in power generation is hindered by challenges such as low burning velocity, slow low-temperature oxidation, high NO x emissions, and ignition difficulty. Here, this work computationally investigates the effects of non-equilibrium energy transfer by nanosecond discharges on NH 3 ignition and flame propagation in an NH 3 /H 2 /air flow at 700 K and 1 atm. The simulation results demonstrate that NH 3 /air mixtures require a large ignition energy due to their large critical ignition radius. It is shown that adding 30 % hydrogen significantly reduces the critical ignition radius and minimum ignition energy. Two-dimensional modeling further shows a non-monotonic dependence of ignition kernel volume on the applied voltage and reduced electric field. The optimum ignition enhancement occurs at 200 Td where the generation of electronically excited species and radicals including N 2 (B), O( 1 D) and OH becomes most efficient. Higher voltages divert electron energy toward ionization, which makes it less effective for NH 3 ignition. The study also identifies an optimal electrode gap size for a given pulse energy. Smaller gap sizes increase deposited energy density, raising temperature and radical concentrations. However, excessive reduction of the gap distance reduces flame propagation speed due to the flame stretch effect in rich mixtures with the effective Lewis number greater than unity. A nonlinear relationship between pulse repetition frequency and ignition kernel volume is observed in a nanosecond pulsed high frequency discharge (NPHFD). An optimal frequency range of 200 kHz to 2 MHz is found when two pulses are used. In addition, an optimal number of pulses exists for each pulse repetition frequency, with higher frequencies requiring more pulses to maximize the overlap region. These findings provide critical insights on developing controlled plasma discharge techniques for efficient NH 3 ignition in reactive flows within internal combustion engines and gas turbines.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Patterned, Low-Temperature Growth of Transition Metal Dichalcogenides for Low Resistance Raised Contacts

Transition metal dichalcogenide (TMD) monolayers are promising channel materials for next-generation electronic devices. A challenge is the high contact resistance between monolayer TMDs and metal contacts, especially for holes. Here, in this regard, raised source/drain contacts are promising. However, the direct, patterned growth of raised contacts at CMOS-compatible temperatures remains largely unresolved. We present plasma-free selenization and sulfurization of metal oxides at substrate temperatures down to 400 °C, compatible with back-end-of-line thermal budgets. To achieve growth at such temperatures, gas-phase chalcogen precursors are first thermally activated at 950 °C. Films grown on single-crystal monolayer TMDs exhibit high crystal quality, as confirmed by transmission electron microscopy. Raised contacts on WSe 2 monolayers fabricated using this approach yield a low hole contact resistance of 0.3 kΩ·μm after chemical doping. This process is shown to be applicable to growing various TMDs, including WS 2 , MoSe 2 , MoS 2 , PtSe 2 , and NbS 2 .

contact engineering↗

Tunable noninteracting free-energy density functionals for high-energy-density physics applications

In this work, we introduce the concept of a tunable noninteracting free-energy density functional and present two examples realized: (i) via a simple one-parameter convex combination of two existing functionals and (ii) via the construction of a generalized gradient approximation (GGA) enhancement factor that contains one free parameter and is designed to satisfy a set of incorporated constraints. Functional (i), constructed as a combination of the local Thomas–Fermi and a pseudopotential-adapted GGA for the noninteracting free-energy, has already demonstrated its practical usability for establishing the high temperature end of the equation of state of deuterium [Phys. Rev. B 104, 144104 (2021)] and CHON resin [Phys. Rev. E 106, 045207 (2022)] for inertial confinement fusion applications. Hugoniot calculations for liquid deuterium are given as another example of how the application of computationally efficient orbital-free density functional theory (OF-DFT) can be utilized with the employment of the developed functionals. Once the functionals have been tuned such that the OF-DFT Hugoniot calculation matches the Kohn–Sham solution at some low-temperature point, agreement with the reference Kohn–Sham results for the rest of the high temperature Hugoniot path is very good with relative errors for compression and pressure on the order of 2% or less.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Size-dependent second-order-like phase transitions in Fe nanocluster melting from low-temperature structural isomerization

Here, in this work, the melting phase transitions of Fe n nanoclusters with 10 ≤ n ≤ 100 atoms are investigated using classical many-body molecular dynamics simulations. For many cluster sizes, surface melting occurs at much lower temperatures than core melting. Surface and core melting points and energetic melting points (temperatures of maximum heat capacity, C v ) are calculated for all cluster sizes. Melting properties are found to be strong functions of cluster structure. Cluster sizes with closed-shell structures always have first-order-like phase transitions. Almost one-third of cluster sizes in the analyzed range exhibit second-order-like phase transitions due to the presence of multiple structural configurations close in energy. 1-shell clusters with one to a few more atoms than a neighboring closed-shell structure have very low surface melting points and very high energetic melting points compared to their closed-shell counterparts. In clusters above 50 atoms with certain core structures, melting of the surface before the core was observed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Interface-sensitive microwave loss in superconducting tantalum films sputtered on c-plane sapphire

Quantum coherence in superconducting circuits has increased steadily over the last decades because of a growing understanding of the various loss mechanisms. Recently, tantalum (Ta) emerged as a promising material to address microscopic sources of loss found on niobium (Nb) or aluminum (Al) surfaces. However, the effects of film and interface microstructure on low-temperature microwave loss are still not well understood. Here, in this study, we present a systematic study of the structural and electrical properties of Ta and Nb films sputtered on c-plane sapphire at varying growth temperatures. As growth temperature was increased, our results show that the onset of epitaxial growth of α -phase Ta correlates with lower Ta surface roughness, higher critical temperature, and higher residual resistivity ratio, but surprisingly also correlates with a significant increase in loss at microwave frequency. Notably, this high level of loss is not observed in Nb films prepared in the same way and having very similar structure. By experimentally controlling the surface on which the Ta film is nucleated, we determine that the source of loss was only present in samples having an epitaxial Ta/sapphire interface and show that it was apparently mitigated by either growing a thin, epitaxial Nb interlayer between the Ta film and the substrate or by intentionally treating, and effectively damaging, the sapphire surface with an in situ argon plasma before Ta growth. In addition to elucidating this interfacial microwave loss, this work provides adequate process details to aid reproducible growth of low-loss Ta films across fabrication facilities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗