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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Probing topological phases in a perturbed Kane-Mele model via RKKY interaction: Application to monolayer jacutingaite Pt 2 ⁢HgSe 3

Quantum spin Hall insulators (QSHIs) leverage strong spin-orbit coupling (SOC) for efficient spin manipulation, making them promising for spintronics. Here, in this study, we investigate the noncollinear Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between two magnetic impurities in a perturbed Kane-Mele model with strong SOC, relevant to monolayer jacutingaite Pt 2 ⁢HgSe 3 as a prominent QSHI. Following the previous studies that mainly focused on the model and its general applications, we provide a systematic examination of the effects of various perturbations and strong spin-orbit hybridizations, which drive phase transitions that have not been extensively explored before. By incorporating these perturbations into the model and accurately accounting for spin-orbit hybridizations through spin-space Green's functions and the RKKY interactions, we uncover distinct, relative (rather than absolute) signatures of different phase transitions. These phase transitions are induced by both static and dynamic perturbations on the magnetic impurities. Notably, we identify additional phases emerging from the interplay with the magnetic substrate. All these influence the switching between ferromagnetic and antiferromagnetic, as well as clockwise and counterclockwise magnetic interactions. Our results provide a practical way to track topological phases through magnetic properties, offering new insights into phase control and spin manipulation in QSHIs.

Kane-Mele model↗
DOE OSTI2025

Reference lattice, sound, stiffness, and magnetic transitions of Ising monolayers

A reference lattice, away from which elastic distortions induced by the spin texturing of two-dimensional (2D) magnets take hold, is motivated from a picture of pairwise Biot-Savart interactions among identical solenoids that either elongate or compress a (“zero-current”) spring lattice. Applied to a paradigmatic CrSiTe 3 monolayer, the reference is given by the average between the atomic positions of ferromagnetic (FM) and Néel antiferromagnetic (AFM) lattices; such an atomic disposition permits understanding structural distortions and elastic energies due to magnetism readily. Furthermore, the anisotropic speed of sound in the magnetic ground state explains an observed anisotropy of vibrational frequencies on similar magnets. Elastic stiffness constants are reported, too. Magnetic energies in four Ising structural configurations were calculated and the strain needed for those 2D magnets to undergo an AFM to FM quantum phase transition was determined as well.

density functional theory↗
DOE OSTI2025

Electronic structure of the alternating monolayer-trilayer phase of La 3 Ni 2 O 7

Recent studies of La 3 Ni 2 O 7 have identified a bilayer (2222) structure and an unexpected alternating monolayer-trilayer (1313) structure, both of which feature signatures of superconductivity near 80 K under high pressures. Using angle-resolved photoemission spectroscopy, we measure the electronic structure of 1313 samples. In contrast to the previously studied 2222 structure, we find that the 1313 structure hosts a flat band with a markedly different binding energy, as well as an additional electron pocket and band splittings. By comparison to local-density approximation calculations, we find renormalizations of the Ni-d z 2 and Ni-d x 2 -y 2 derived bands to be about 5 to 7 and about 4 respectively, suggesting strong correlation effects. These results reveal important differences in the electronic structure brought about by the distinct structural motifs with the same stoichiometry. Such differences may be relevant to the putative high temperature superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Anomalous Landau Level Gaps Near Magnetic Transitions in Monolayer WSe 2

First-order phase transitions produce abrupt changes to the character of both ground and excited electronic states. Here we conduct electronic compressibility measurements to map the spin phase diagram and Landau level (LL) energies of monolayer WSe 2 in a magnetic field. We resolve a sequence of first-order phase transitions between completely spin-polarized LLs and states with LLs of both spins. Unexpectedly, the LL gaps are roughly constant over a wide range of magnetic fields below the transitions, which we show reflects spin-polarized ground states with opposite spin excitations. These transitions also extend into compressible regimes, with a sawtooth boundary between full and partial spin polarization. We link these observations to the important influence of LL filling on the exchange energy beyond a smooth density-dependent contribution. Our results show that WSe 2 realizes a unique hierarchy of energy scales where such effects induce reentrant magnetic phase transitions tuned by density and magnetic field. Published by the American Physical Society 2024

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Intrinsic Defect-Induced Local Semiconducting-to-Metallic Regions Within Monolayer 1T-TiS2 Displayed by First-Principles Calculations and Scanning Tunneling Microscopy

Using density functional theory (DFT) and scanning tunneling microscopy (STM), the intrinsic point defects, formation energy, and electronic structure of 1T-TiS2 were investigated. Defect systems include single-atom vacancies, interstitial and adatom additions, and direct atomic substitution. Using a collective approach for analyzing realistic systems for point defect investigation, we provide a more straightforward comparison to the experimental measurements, reproducing more realistic environmental conditions related to thin film growth. STM images are compared to computationally simulated electron density images to identify specific geometries that result from favorable point defects. DFT suggests that titanium interstitials are the most energetically favorable intrinsic defect, and sulfur vacancies are more likely to form than titanium vacancies within this realistic analysis, which is in agreement with STM data. A pristine, stoichiometric monolayer system is calculated to have a direct band gap of 0.422 eV, which varies based on local point defects. Local semiconducting-to-metallic electronic transitions are predicted to occur based on the presence of Ti interstitials.

Keeney, P. J.↗
NASA NTRS1973

Monolayer boron-aluminum compacted sheet material

The manufacturing techniques, basic materials used, and equipment required to produce monolayer boron-aluminum composites are described. Tentative materials and process specifications are included. Improvements in bonding and filament spacing obtained through use of brazing powder in the fugitive binder are discussed.

Sumner, E. V.↗
NASA NTRS1985

Chiral solidification of a phospholipid monolayer

The formation of chiral solidlike domains observed by Weiss and McConnell (1984) in monolayers of depalmitoylphosphatidylcholine (DPPC) floating on an air-water interface is investigated theoretically. It is proposed that the diffusion tensor for the two-dimensional fluidlike phase of the DPPC molecules has a chiral component acting perpendicular to the concentration gradient and coupled to the rotational motion of a pinwheellike molecule by the viscous forces. Diagrams are provided, and numerical estimates of the forces involved are shown to be in agreement with the observed behavior of the structures.

Langer, J. S.↗
NASA NTRS1993

Laser damage of HR, AR-coatings, monolayers and bare surfaces at 1064 nm

Laser induced damage thresholds and morphologies were investigated in a variety of uncoated and coated surfaces, including monolayers and multi-layers of different chemical compositions. Both antireflective (AR) and highly reflective (HR) were tested. Testing was done at 1064 nm with 25 picosecond and 8 nanosecond YAG/Nd laser single pulses. Spot diameter in the experiments varied from 0.09 to 0.22 mm. The laser damage measurement procedure consisted of 1-on-1 (single laser pulse in the selected site) and N-on-1 experiments including repeated irradiation by pulses of the same fluence and subsequently raised from pulse to pulse fluence until damage occurred. The highest picosecond damage thresholds of commercially available coatings averaged 12 - 14 J/sq cm, 50 percent less than thresholds obtained in bare fused silica. Some coatings and bare surfaces revealed a palpable preconditioning effect (an increase in threshold of 1.2 to 1.8 times). Picosecond and nanosecond data were compared to draw conclusions about pulse width dependence. An attempt was made to classify damage morphologies according to the type of coating, class of irradiating, and damage level.

Garnov, S. V.↗
NASA NTRS2004

Comparison of Genotoxic Damage in Monolayer Cell Cultures and Three-Dimensional Tissue-Like Cell Assemblies

Assessing the biological risks associated with exposure to the high-energy charged particles encountered in space is essential for the success of long-term space exploration. Although prokaryotic and eukaryotic cell models developed in our laboratory and others have advanced our understanding of many aspects of genotoxicity, in vitro models are needed to assess the risk to humans from space radiation insults. Such models must be representative of the cellular interactions present in tissues and capable of quantifying I genotoxic damage. Toward this overall goal, the objectives of this study were to examine the effect of the localized microenvironment of cells, cultured as either 2-dimensional (2D) monolayers or 3-dimensional (3D) aggregates, on the rate and type of genotoxic damage resulting from exposure to iron charged particles, a significant portion of space radiation. We used rodent transgenic cell lines containing 50-70 copies of a LacI transgene to provide the enhanced sensitivity required to quantify mutational frequency and type in the 1,100-bp LacI target as well as assessment of DNA,damage to the entire 45-kbp construct. Cultured cells were exposed to high-ener~ir on charged particles at Brookhaven National Laboratory s Alternating Gradient Synchrotron facility for a total dose of 0, 0.1, 0.25,0.5, 1.0, or 2.0 Gy and allowed to recover for 0, 1, or 7 days, after which mutational type and frequency were evaluated. The mutational frequency was found to be higher in 3D samples than in 2D samples at all radiation doses. Mutational frequency also was higher at 7 days after irradiation than immediately after exposure. DNA sequencing of the mutant targets revealed that deletional mutations contributed an increasingly high percentage (up to 27%) of all mutations in cells as the dose was increased from 0.5 to 2 Gy. Several mutants also showed large and complex deletions in multiple locations within the Lac1 target. However, no differences in mutational type were found between the 2D and the 3D samples. These 3D tissue-like model systems can reduce the uncertainty involved in extrapolating risk between in vitro cellular and in vivo models.

Behravesh, E.↗
NASA NTRS2005

Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP

In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

Qiu, Yueming↗
NASA NTRS2014

Monolayer Graphene Bolometer as a Sensitive Far-IR Detector

In this paper we give a detailed analysis of the expected sensitivity and operating conditions in the power detection mode of a hot-electron bolometer (HEB) made from a few micro m(sup 2) of monolayer graphene (MLG) flake which can be embedded into either a planar antenna or waveguide circuit via NbN (or NbTiN) superconducting contacts with critical temperature approx. 14 K. Recent data on the strength of the electron-phonon coupling are used in the present analysis and the contribution of the readout noise to the Noise Equivalent Power (NEP) is explicitly computed. The readout scheme utilizes Johnson Noise Thermometry (JNT) allowing for Frequency-Domain Multiplexing (FDM) using narrowband filter coupling of the HEBs. In general, the filter bandwidth and the summing amplifier noise have a significant effect on the overall system sensitivity.

noise thermometry↗
NASA NTRS2018

Nanoscale Fabrication of Microwave Detectors from Commercially-Available CVD-Grown Monolayer Graphene

Using commercially-available monolayer graphene, synthesized by means of chemical vapor deposition, microwave power sensing elements have been nanofabricated and integrated with microwave-grade test structures suitable for on-wafer probing. The graphene, situated on a thermal oxide, was first cleaned of stray contaminants in a forming gas environment briefly held at 250 degrees Celsius using a rapid thermal annealer. Immediately following this step, the graphene was passivated with a protective aluminum oxide layer (approximately S nm in thickness). Micrometer-scale Corbino disc test structures were then fabricated in direct contact with the graphene using a self-aligned process, which relies on the fact that tetramethylammonium hydroxide develops the photoresist while removing the aluminum oxide. Graphene nanoribbons (with widths as small 400 nm) were then fabricated across the Corbino disc gaps using electron-beam writing in conjunction with a negative tone resist. The same developer exposed the majority of the graphene while defining nanometer-scale lines of photoresist stacked upon aluminum oxide. These stacks served as etch-stops while the unprotected graphene was ion-milled in an oxygen plasma. Finally, the photoresist was removed leaving behind passivated graphene nanoribbons. Damage caused by the fabrication was evaluated by comparing the Raman spectra of the grapheme before and after processing.

detectors↗
NASA NTRS2023

Effect of the Electrostatic Field due to the Surface Monolayer Metal Atoms on the Dissociation of Homonuclear Diatomic Gases in Gas-Metal Surface Reactions

The present paper examines the role of an electrostatic field generated by the outermost monolayer of metal ions prior to gas adsorption in aiding the dissociation of homonuclear diatomic gas molecules. The interaction of five homonuclear diatomic gases, Cl 2 , F 2 , H 2 , N 2 and O 2 , with several pure metals are examined using Coulomb’s law to calculate the attractive and repulsive forces between the electrons or ions in the gas molecule and the free surface metallic electrons or ions assuming a Bohr model. These calculations demonstrate that the total energy of the electrostatic fields from the metals can exceed the molecular binding energies of Cl 2 , F 2 , and O 2 at some distance from the metallic surface thereby suggesting that these gases interact primarily with the metallic surface in their atomic states after molecular bond dissociation prior to reaction. In contrast, H 2 and N 2 gases do not dissociate prior to reaching the metal surface due to the fact that the effective charge of the gas ions is less than the total electron charge at the outermost electronic shell. The present results correlate linearly with the electrochemical series standard reduction potential as well as with the Pauling electronegativity for several metals.

Gas-metal reactions↗
DOE OSTI2026

Hole Transfer to Carbazole Derivatives: Untold Story of “Self-Assembled Monolayers” Employed in “Halide Perovskite Solar Cells”

Carbazole derivatives, such as MeO-2PACz and 2PACz are known to improve the performance of halide perovskite solar cells by facilitating hole transfer. To assess their interaction with halide perovskites, this work probes the hole transfer from excited CsPbBr3 quantum dots to MeO-2PACz and 2PACz using emission spectroscopic and transient absorption techniques. The different oxidation potentials of these two carbazoles result in divergent interactions with CsPbBr 3 QDs. Whereas MeO-2PACz quenches the emission of CsPbBr 3 QDs, 2PACz enhances the emission by remediating the surface traps. Transient absorption studies confirm the formation of MeO-2PACz +• cation radical with characteristic absorption in the near IR region. No such oxidation process was observed with 2PACz. The mechanistic insights into the interaction of the two carbazole derivatives with excited perovskite nanocrystals will add another piece to the untold story behind the improved performance of perovskite photovoltaic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Focused Helium Ion Beam for Direct Patterning of Monolayer MoS 2 Nanoribbon Field Effect Devices

The helium ion microscope (HIM) focused ion beam (FIB) has emerged as a powerful tool to directly pattern nanostructures below 10 nm due to its high-resolution capabilities and the inert nature of the ion source. These attributes make HIM FIB particularly interesting for patterning 2D materials such as transition metal dichalcogenides (TMDs) to investigate transport phenomena at the nanoscale. Reported here is the fabrication of MoS 2 nanoribbon devices using HIM FIB-induced etching (FIBIE) with XeF 2 , allowing for reduced ion dose compared to direct sputtering. While patterning is efficacious, the devices exhibit performance degradation with decreasing nanoribbon width due to damage up to 150 nm beyond the patterned edge. Incorporating an hBN encapsulation improves device performance by one order of magnitude, although the lateral extent of damage remains unchanged. The spatial distribution of damage is shown to be determined by the forward- and backscattered ions and electrons, while the hBN encapsulation layer substantially reduces damage from XeF 2 interactions in unexposed regions. Raman and photoluminescence (PL) measurements corroborate these findings, while ion/solid interaction simulations further elucidate the resolution limits imposed by substrate interactions. In conclusion, this work provides critical insights and a practical pathway for utilizing HIM FIBIE in 2D TMD functional device patterning.

MoS 2↗