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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1973

Low-high junction theory applied to solar cells

Recent use of alloying techniques for rear contact formation has yielded a new kind of silicon solar cell, the back surface field (BSF) cell, with abnormally high open circuit voltage and improved radiation resistance. Several analytical models for open circuit voltage based on the reverse saturation current are formulated to explain these observations. The zero SRV case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the low-high junction and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells. Detailed descriptions and derivations for the models are included. The correspondences between them are discussed. This modeling suggests that the meaning of minority carrier diffusion length measured in BSF cells be reexamined.

Godlewski, M. P.↗
NASA NTRS1975

Semiconductor electrolyte photovoltaic energy converter

Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

Anderson, W. W.↗
NASA NTRS1972

Electrochemical behavior of the boron anode in aqueous solutions

The electrochemical oxidation of p-type boron in 0.2 N NaNO3 solutions of pH 0.4 to 13.1 was studied by galvanostatic techniques. The capacitance of the electrode, Tafel slopes, and a limited analysis of reaction mechanisms are reported. The anodic dissolution in acid solution is a charge-transfer-limited one-electron reaction to form a monovalent species in the over-potential region of 0.25 to 0.70 V. The dissolution in basic solution is most probably a one-electron charge-transfer reaction from a monovalent to divalent species involving three hydroxyl ions. Open circuit potentials were mixed potentials, probably due to hydrogen formation at open circuit but not contributing to the electrochemical reaction at the applied overpotential. Exchange current, estimated by extrapolation of the Tafel line to the standard oxidation potential for the boron reaction, were of the order of 10 to the minus 6th power A/cm2 in acid solution and 10 to the minus 12th power A/cm2 in basic solution. The reaction order of the rate determining acidic and basic reactions was determined with regard to (H+) and (OH-). The level of illumination had no effect on the electrochemical behavior of the electrode.

Delduca, B. S.↗
NASA NTRS1974

Low-high junction theory applied to solar cells

Recent use of alloying techniques for rear contact formation has yielded a new kind of silicon solar cell, the back surface field (BSF) cell, with abnormally high open-circuit voltage and improved radiation resistance. Several analytical models for open-circuit voltage based on the reverse saturation current are formulated to explain these observations. The zero surface recombination velocity (SRV) case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the low-high junction and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells.

Godlewski, M. P.↗
NASA NTRS1985

Two years of on-orbit gallium arsenide performance from the LIPS solar cell panel experiment

The LIPS on-orbit performance of the gallium arsenide panel experiment was analyzed from flight operation telemetry data. Algorithms were developed to calculate the daily maximum power and associated solar array parameters by two independent methods. The first technique utilizes a least mean square polynomial fit to the power curve obtained with intensity and temperature corrected currents and voltages; whereas, the second incorporates an empirical expression for fill factor based on an open circuit voltage and the calculated series resistance. Maximum power, fill factor, open circuit voltage, short circuit current and series resistance of the solar cell array are examined as a function of flight time. Trends are analyzed with respect to possible mechanisms which may affect successive periods of output power during 2 years of flight operation. Degradation factors responsible for the on-orbit performance characteristics of gallium arsenide are discussed in relation to the calculated solar cell parameters. Performance trends and the potential degradation mechanisms are correlated with existing laboratory and flight data on both gallium arsenide and silicon solar cells for similar environments.

Francis, R. W.↗
NASA NTRS1973

Parametric performance characteristics and treatment of temperature coefficients of silicon solar cells for space application

The electrical performance characteristics of 2 and 10 ohms-cm N/P-type silicon solar cells were measured at simulated solar intensities of 5, 50, 100, 140, 250, 400, 550, 700, and 850 mW/sq cm. At each intensity, the temperature was varied in increments of 20 deg between extremes of +160 and -160 C. Short-circuit current, open-circuit voltage, and maximum power are presented in graphical format. Also described are three methods for predicting solar cell electrical performance as a function of temperature and intensity. Two of the methods are suitable for use at extreme temperature-intensity conditions. These methods were used sucessfully to predict the performance of the transducer on board the Mariner Mars 1971 spacecraft.

Patterson, R. E.↗
NASA NTRS1979

Detection of hairline cracks in textured silicon solar cells

Using a focused laser scanner, the optical technique described in the present paper can be used to detect hairline cracks of the type occurring in solar cells subjected to surface texturing. The technique is capable of detecting cracks of the order of a few microns, which, otherwise, can be observed only under high magnification using an optical microscope. The technique consists of scanning a solar cell with a finely focused laser beam and recording the photoresponse (short circuit current or open circuit voltage) as a function of beam position. The presence of a crack is manifested by a sharp dip in the photoresponse.

Sopori, B. L.↗
NASA NTRS1980

Testing EKG electrodes on-line

Simple test instrument allows electrocardiograph operator to check individual electrodes while they are attached to subject. Simply by rotating switch and observing meter, operator verifies that each electrode is not short-circuited or open-circuited and does not present excessive contact resistance at its interface with skin. Instrument also makes it convenient to check electrode cables that are subject to frequent bending and wear, such as cables used on patients who are exercising.

Crosier, W. G.↗
NASA NTRS1980

Radiation tolerance of vertical junction solar cells

Extensive radiation testing of vertical junction (VJ) solar cells demonstrated a radiation tolerance better than both planar silicon cells and at least one type of (AlGa)As-GaAs cell. Due to tradeoffs between short circuit current and open circuit voltage, the end of life (10 to the 16th power 1 MeV electrons/sq cm) maximum power point is nearly independent of bulk resistivity between 2 and 10 ohm cm, increases slightly with increasing wafer thickness between 3 and 11 mils, and increases slightly with increasing groove depth between 1 and 3 mils.

Schelnine, A.↗
NASA NTRS1982

Study of the photovoltaic effect in thin film barium titanate

The basic mechanism associated with the photovoltaic phenomena observed in the R.F. sputtered BaTiO3/silicon system is presented. Series of measurements of short circuit photocurrents and open circuit photovoltage were made. The composition depth profiles and the interface characteristics of the BaTiO3/silicon system were investigated for a better understanding of the electronic properties. A Scanning Auger Microprobe combined with ion in depth profiling were used.

Grannemann, W. W.↗
NASA NTRS1994

Electron-irradiated two-terminal, monolithic InP/Ga0.47In0.53As tandem solar cells and annealing of radiation damage

Radiation damage results from two-terminal monolithic InP/Ga(0.47)In(0.53)As tandem solar cells subject to 1 MeV electron irradiation are presented. Efficiencies greater than 22 percent have been measured by the National Renewable Energy Laboratory from 2x2 sq cm cells at 1 sun, AMO (25 C). The short circuit current density, open circuit voltage and fill factor are found to tolerate the same amount of radiation at low fluences. At high fluence levels, slight differences are observed. Decreasing the base amount of radiation at the Ga(0.47)In(0.53)As bottomcell improved the radiation resistance of J(sub sc) dramatically. This is turn, extended the series current flow through the subcell substantially up to a fluence of 3x10(exp 15) cm(exp -2) compared to 3x10(exp 14) cm(exp -2), as observed previously. The degradation of the maximum power output form tandem device is comparable to that from shallow homojunction (SHJ) InP solar cells, and the mechanism responsible for such degradation is explained in terms of the radiation response of the component cells. Annealing studies revealed that the recovery of the tandem cell response is dictated by the annealing characteristics exhibited by SHJ InP solar cells.

Cotal, H. L.↗
NASA NTRS1997

Pre-Flight Dark Forward Electrical Testing of the Mir Cooperative Solar Array

The Mir Cooperative Solar Array (MCSA) was developed jointly by the United States (US) and Russia to provide approximately 6 kW of photovoltaic power to the Russian space station Mir. After final assembly in Russia, the MCSA was shipped to the NASA Kennedy Space Center (KSC) in the summer of 1995 and launched to Mir in November 1995. Program managers were concerned of the potential for MCSA damage during the transatlantic shipment and the associated handling operations. To address this concern, NASA Lewis Research Center (LERC) developed an innovative dark-forward electrical test program to assess the gross electrical condition of each generator following shipment from Russia. The use of dark test techniques, which allow the array to remain in the stowed configuration, greatly simplifies the checkout of large area solar arrays. MCSA dark electrical testing was successfully performed at KSC in July 1995 following transatlantic shipment. Data from this testing enabled engineers to quantify the effects of potential MCSA physical damage that would degrade on-orbit electrical performance. In this paper, an overview of the principles and heritage of photovoltaic array dark testing is given. The specific MCSA dark test program is also described including the hardware, software, testing procedures and test results. The current-voltage (4) response of both solar cell circuitry and by-pass diode circuitry was obtained. To guide the development of dark test hardware, software and procedures, a dedicated FORTRAN computer code was developed to predict the dark 4 responses of generators with a variety of feasible damage modes. By comparing the actual test data with the predictions, the physical condition of the generator could be inferred. Based on this data analysis, no electrical short-circuits or open-circuits were detected. This suggested the MCSA did not sustain physical damage that affected electrical performance during handling and shipment from Russia to the US. Good agreement between the test data and computational predictions indicated MCSA electrical performance was amenable to accurate analysis and was well understood.

Kerslake, Thomas W.↗
NASA NTRS2003

Dye-Sensitized Solar Cells for Space Power

During the course of this grant, dye-sensitized solar cells were prepared and characterized. The solar cells were prepared using materials (dyes, electrolytes, transparent conductive oxide coated glass, nanocrystalline TiO2) entirely prepared in-house, as well as prepared using materials available commercially. Complete cells were characterized under simulated AM0 illumination. The best cell prepared at NASA had an AM0 efficiency of 1.22% for a 1.1 sq cm cell. Short circuit current (Isc), open circuit voltage (Voc) and fill factor (FF) for the cell were 6.95 mA, 618 mV and 42.8%, respectively. For comparison purposes, two commercially prepared dye-sensitized solar cells were obtained from Solaronix SA, Aubonne, Switzerland. The Solaronix cells were also characterized under simulated AM0 illumination. The best cell from Solaronix had an active area of 3.71 sq cm and measured an AM0 efficiency of 3.16%. with Isc, Voc and FF of 45.80 mA, 669.6 mV and 52.3%, respectively. Both cells from Solaronix were rapid thermal cycled between -80 C and 80 C. Thermal cycling led to a 4.6% loss of efficiency in one of the cells and led to nearly a complete failure in the second cell.

Harris, Jerry D.↗
NASA NTRS1976

Correlation between nonequilibrium thermodynamic theory and V-I curves of a thermionic converter

The methods of irreversible thermodynamics are used as a basis for developing a transport theory applicable to thermionic cesium diodes. This theory is applied in describing certain aspects of experimental voltage-current (V-I) characteristic curves of a thermionic diode. Emphasis is placed on the open-circuit voltage and short-circuit current of the V-I curves. Experimental results show that the open-circuit voltage is essentially independent of the interelectrode spacing, whereas the short-circuit current varies inversely with the interelectrode separation. The inverse dependence is in agreement with the results of the present analysis and also with results expected from diffusion theory, which has been used in other analyses. In fact, the theory used in this investigation reduces to diffusion theory under special assumptions. Deviations from diffusion theory, which were found in experimental results, can be accounted for using the theory developed in this paper.

Robinson, L. B.↗
NASA NTRS1985

Microstrip termination effects on dielectric resonator filters

Dielectric resonator filters coupled to microstrip lines appear to answer the requirements of high performance and small size and weight that must be satisfied for use in satellite-based radiometers. The open-circuit and short-circuit types of coupling dielectric resonators to microstrip lines were compared with respect to radiation losses at various frequencies. The filters were fabricated from 1.6 mm Duroid board. The termination impedances for the microstrip lines were measured using a calibrated HP 8510 network analyzer. The values for radiation resistance obtained experimentally for both types of coupling agreed well with the values calculated from the Lewin theory (1960). It was found that the use of short-circuit coupling results in significantly reduced radiation resistance compared to the use of open-circuit lines. Improvement increases with increased frequency.

Trew, R. J.↗
NASA NTRS1984

Towards a 20 percent efficient silicon solar cell

A project is underway at the University of New South Wales aimed at producing a 20 percent efficient silicon solar cell. A prerequisite for obtaining such a significant increase in cell efficiency is the improvement of the open circuit voltage of these cells. Two techniques are described which have produced experimental devices with open circuit voltages of 690 mV or higher. These high voltage techniques have been combined with other high efficiency design features to produce silicon cells with independently measured energy conversion efficiencies in excess of 19 percent under standard terrestrial test conditions (direct beam AM1.5 spectrum, 100 mW/sq cm, 28 C).

Green, M. A.↗
NASA NTRS1975

Advances in the theory and application of BSF cells

The characteristics and behavior of p(+), p solar cells were investigated. The p(+), p cells were made by the removal of the n(+) surface layers from n(+), p p(+), BSF cells followed by application of a suitable contact to the resultant p(+), p structures. The open circuit voltage of p(+), p cells was found to increase with increasing 'p' bulk resistivity. The measured open circuit velocity-temperature coefficients were positive and increased with increasing resistivity. An outline of prior limitations in solar cell design is presented, and the removal of these limitations through use of BSF effects is pointed out. The study of BSF effects made feasible production of very thin high efficiency silicon cells as well as high resistivity-high efficiency cells, two desirable types of silicon cells which were previously impossible to make.

Mandelkorn, J.↗