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All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

A Solvatochromic Near Infrared Fluorophore Sensitive to the Full Amyloid Beta Aggregation Pathway

Alzheimer's disease has long been associated with the aggregation of amyloid beta peptides (Aβ42) into macroscale plaques, although specific neurodegenerative agents have not been definitively identified. Much evidence has pointed to the soluble nanoscale oligomers that form early in the Aβ42 aggregation pathway, but there is little understanding of these structures, their mechanisms of formation, or how they grow into plaques. Here, we show that a solvatochromic fluorophore with near-infrared (NIR) emission can track synthetic Aβ42 aggregation through environment-sensitive spectral shifts from the earliest time points through plaque formation. This azide-functionalized phosphine oxide azetidine rhodol (Phazr-N3) shows large polarity-dependent changes in fluorescence emission, with maxima shifting from 630 nm in toluene to 703 nm in aqueous buffer, and a maximum quantum yield of 62%. Upon induction of Aβ42 aggregation, we observe immediate solvatochromic changes in Phazr-N3 fluorescence, with multiple apparent phases over 12 h, and which culminate before the onset of any major fluorescence changes of conformation-specific aggregation fluorophore thioflavin T. Solution anisotropy measurements show a low micromolar affinity of Phazr-N3 for disordered, free Aβ42 in solution, and real-time measurements are consistent with rapid liquid-liquid phase separation and slow dehydration of the growing aggregate. Spectral imaging of synthetic plaques stained in the presence of live cells and lipid-binding protein albumin shows over 4000-fold Phazr-N3 fluorescence intensity above background under no-wash conditions, and over 100-fold intensity above coplated microglial cells or a large excess of albumin. This use of a solvatochromic probe with structure-independent binding to free Aβ42 offers real-time, minimally invasive insight into the full Aβ42 aggregation pathway.

Wang, Zeming↗
DOE OSTI2023

Isolation, bonding and reactivity of a monomeric stibine oxide

Abstract In contrast to phosphine oxides and arsine oxides, which are common and exist as stable monomeric species featuring the corresponding pnictoryl functional group (Pn=O/Pn + –O − ; Pn = P, As), stibine oxides are generally polymeric, and the properties of the unperturbed stiboryl group (Sb=O/Sb + –O − ) remain unexplored. We now report the isolation of the monomeric stibine oxide, Dipp 3 SbO (where Dipp = 2,6-diisopropylphenyl). Spectroscopic, crystallographic and computational studies provide insight into the nature of the Sb=O/Sb + –O − bond. Moreover, isolation of Dipp 3 SbO allows the chemistry of the stiboryl group to be explored. Here we show that Dipp 3 SbO can act as a Brønsted base, a hydrogen-bond acceptor and a transition-metal ligand, in addition engaging in 1,2-addition, O-for-F 2 exchange and O-atom transfer. In all cases, the reactivity of Dipp 3 SbO differed from that of the lighter congeners Dipp 3 AsO and Dipp 3 PO.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Ligand accommodation causes the anti-centrosymmetric structure of Au 13 Cu 4 clusters with near-infrared emission

Here, we synthesized an [Au 13 Cu 4 (PPh 3 ) 4 (SPy) 8 ] + nanocluster co-capped by phosphine and thiolate ligands. Interestingly, this Au 13 Cu 4 cluster corresponds to an anti-centrosymmetric structure with the four copper atoms coordinated to the mixed ligands on the same side of the Au 13 icosahedron, which is in sharp contrast to the [Au 13 Cu 4 (PPh 2 Py) 4 (SPhtBu) 8 ] + and [Au 13 Cu 2 (PPh 3 ) 6 (SPy) 6 ] + clusters which possess highly symmetric structures with well-separated Cu adatoms. Both [Au 13 Cu 4 (PPh 3 ) 4 (SPy) 8 ] + and [Au 13 Cu 2 (PPh 3 ) 6 (SPy) 6 ] + clusters correspond to 8 valence electron superatoms with large HOMO–LUMO gaps, respectively. The difference in structure is rooted in the nature of the mixed ligands, with the bidentate SPy binding strongly to Cu on both binding sites (–N–Cu and Au-SR-Cu) leading to the co-linking of adjacent Cu atoms, while the bidentate PPh 2 Py binds Cu on one site and Au on the other giving rise to a separation of the Cu atoms even in the presence of relatively higher monomer concentration. Both [Au 13 Cu 4 (PPh 3 ) 4 (SPy) 8 ] + and [Au 13 Cu 2 (PPh 3 ) 6 (SPy) 6 ] + display emissions in the near-IR regions. TD-DFT calculations reproduce the spectroscopic results with specified excited states, shedding light on the geometric and electronic behaviors of the ligand-protected Au 13 M x clusters.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Synthesis of luminescent core/shell α-Zn 3 P 2 /ZnS quantum dots

Metal chalcogenide nanoparticles offer vast control over their optoelectronic properties via size, shape, composition, and morphology which has led to their use across fields including optoelectronics, energy storage, and catalysis. While cadmium and lead-based nanocrystals are prevalent in applications, concerns over their toxicity have motivated researchers to explore alternate classes of nanomaterials based on environmentally benign metals such as zinc and tin. The goal of this research is to identify material systems that offer comparable performance to existing metal chalcogenide systems from abundant, recyclable, and environmentally benign materials. With band gaps that span the visible through the infrared, II–V direct band gap semiconductors such as tetragonal zinc phosphide (α-Zn 3 P 2 ) are promising candidates for optoelectronics. To date, syntheses of α-Zn 3 P 2 nanoparticles have been hindered because of the toxicity of zinc and phosphorus precursors, surface oxidation, and defect states leading to carrier trapping and low photoluminescence quantum yield. Here, we report a colloidal synthesis of quantum confined α-Zn 3 P 2 nanoparticles from common phosphorus precursor tris(trimethylsilyl)phosphine and environmentally benign zinc carboxylates. Shelling of the nanoparticles with zinc sulfide is shown as a method of preventing oxidation and improving the optical properties of the nanoparticles. These results show a route to stabilizing α-Zn 3 P 2 nanoparticles for optoelectronic device applications.

25 ENERGY STORAGE↗
DOE OSTI2022

Pressurized formic acid dehydrogenation: an entropic spring replaces hydrogen compression cost

Formic acid is unique among liquid organic hydrogen carriers (LOHCs), because its dehydrogenation is highly entropically driven. This enables the evolution of high-pressure hydrogen at mild temperatures that is difficult to achieve with other LOHCs, conceptually by releasing the “spring” of energy stored entropically in the liquid carrier. Applications calling for hydrogen-on-demand, such as vehicle filling, require pressurized H 2 . Hydrogen compression dominates the cost for such applications, yet there are very few reports of selective, catalytic dehydrogenation of formic acid at elevated pressure. Herein, we show that homogenous catalysts with various ligand frameworks, including Noyori-type tridentate (PNP, SNS, SNP, SNPO), bidentate chelates (pyridyl)NHC, (pyridyl)phosphine, (pyridyl)sulfonamide, and their metallic precursors, are suitable catalysts for the dehydrogenation of neat formic acid under self-pressurizing conditions. Quite surprisingly, we discovered that their structural differences can be related to performance differences in their respective structural families, with some tolerant or intolerant of pressure and others that are significantly advantaged by pressurized conditions. Here, we further find important roles for H 2 and CO in catalyst activation and speciation. In fact, for certain systems, CO behaves as a healing reagent when trapped in a pressurizing reactor system, enabling extended life from systems that would be otherwise deactivated.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Photophysical properties of three-coordinate heteroleptic Cu( I ) β-diketiminate triarylphosphine complexes

A series of heteroleptic copper(I) β-diketiminate triarylphosphine complexes is reported, having the general formula Cu(R 1 NacNac R2 )(PPh X 3 ), where R 1 NacNac R2 is a substituted β-diketiminate and PPh X 3 is a triphenylphosphine derivative. A total of five different R 1 NacNac R2 ligands and three different triarylphosphines are used to assemble the nine complexes. Here, the syntheses, X-ray crystal structures, cyclic voltammograms, and UV–vis absorption spectra of all compounds are described. Whereas most of the compounds are weakly luminescent or only luminesce at 77 K, the four complexes with the more sterically encumbered β-diketiminate ligands, with methyl or isopropyl substituents at the 2- and 6-positions of the N-phenyl rings, exhibit weak room-temperature photoluminescence with peaks between 519 and 566 nm and long excited-state lifetimes in the range of 15–70 μs. The sterically encumbering substituents in this subset have subtle effects on the UV–vis absorption maximum, which red shifts slightly as the steric bulk increases, as well as significant effects on the photoluminescence lifetime, which is observed to increase as the steric bulk is augmented. Substituents on the triarylphosphine also influence the excited-state dynamics in the bulky complexes, with the more electron-rich tris(4-methoxyphenyl)phosphine (PPh OMe 3 ) giving longer-excited-state lifetimes compared to triphenylphosphine (PPh 3 ) when the same R 1 NacNac R2 ligand is used.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Structural complexity in the f -block: small deviations of the complexation of lanthanides by O,Oʹ -diethylmonothiophosphate

Dithiophosphinic acids undergo radiolytic degradation during the extraction of actinides in used nuclear fuel. These will degrade into monothiophosphinic acids and then to phosphinic acids. To elucidate how the complexes that are formed during these radioactive separations change as the ligand degrades, the mixed donor ligand O,O′- diethylmonothiophosphate is chosen as an analog for the monothiophosphinic intermediate. Herein, the monothiophosphate complexes Ln 2 (OPS(OEt) 2 ) 6 (H 2 O) 8 (Ln = La) (La 2 L 6 H 2 O), Ln 2 (OPS(OEt) 2 ) 6 (EtOH) 4 (Ln = La) (La 2 L 6 EtOH), K 2 [Ln(OPS(OEt) 2 ) 5 (H 2 O) 2 ]·H 2 O·CH 2 Cl 2 , (Ln = Ce) (CeL 5 -α), K 2 [Ln(OPS(OEt) 2 ) 5 (H 2 O) 2 ]·H 2 O·CH 2 Cl 2 , (Ln = Pr) (PrL 5 -β), K[Ln(OPS(OEt) 2 ) 4 (H 2 O) 3 ], (Ln = Pr, Sm-Er) (ML 4 ), and K 3 [Ln(OPS(OEt) 2 ) 6 ], (Ln = Dy) (DyL 6 ) were synthesized and characterized using single-crystal X-ray diffraction and optical spectroscopy. Although the lanthanides contract in a nearly linear fashion, the structural changes observed as the f-block is traversed in these compounds are not necessarily a hard line but more so a blend of different structure types possible for each f-element. Furthermore, comparison of the Ln−O bond lengths shows a nearly linear contraction, but the Ln−S bond lengths do not monotonically decrease because of the hard Lewis acidity of the Ln 3+ cations.

37 - INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL C↗
DOE OSTI2021

Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with subnanometer precision, typically for quantum physics experiments. This process, which we call atomic precision advanced manufacturing (APAM), dopes silicon beyond the solid-solubility limit and produces electrical and optical characteristics that may also be useful for microelectronic and plasmonic applications. However, scanned probe lithography lacks the throughput required to develop more sophisticated applications. In this work, we demonstrate and characterize an APAM device workflow where scanned probe lithography of the atomic layer resist has been replaced by photolithography. An ultraviolet laser is shown to locally and controllably heat silicon above the temperature required for hydrogen depassivation on a nanosecond timescale, a process resistant to under- and overexposure. STM images indicate a narrow range of energy density where the surface is both depassivated and undamaged. Modeling that accounts for photothermal heating and the subsequent hydrogen desorption kinetics suggests that the silicon surface temperatures reached in our patterning process exceed those required for hydrogen removal in temperature-programmed desorption experiments. A phosphorus-doped van der Pauw structure made by sequentially photodepassivating a predefined area and then exposing it to phosphine is found to have a similar mobility and higher carrier density compared with devices patterned by STM. Lastly, it is also demonstrated that photodepassivation and precursor exposure steps may be performed concomitantly, a potential route to enabling APAM outside of ultrahigh vacuum.

nanoscale devices↗
DOE OSTI2020

Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with sub-nanometer precision, typically for quantum physics demonstrations, and to dope silicon past the solid-solubility limit, with potential applications in microelectronics and plasmonics. However, this process, which we call atomic precision advanced manufacturing (APAM), currently lacks the throughput required to develop sophisticated applications because there is no proven scalable hydrogen lithography pathway. Here, we demonstrate and characterize an APAM device workflow where STM lithography has been replaced with photolithography. An ultraviolet laser is shown to locally heat silicon controllably above the temperature required for hydrogen depassivation. STM images indicate a narrow range of laser energy density where hydrogen has been depassivated, and the surface remains well-ordered. A model for photothermal heating of silicon predicts a local temperature which is consistent with atomic-scale STM images of the photo-patterned regions. Finally, a simple device made by exposing photo-depassivated silicon to phosphine is found to have a carrier density and mobility similar to that produced by similar devices patterned by STM.

42 ENGINEERING↗
DOE OSTI2023

Rational design of Lewis base molecules for stable and efficient inverted perovskite solar cells

Lewis base molecules that bind undercoordinated lead atoms at interfaces and grain boundaries (GBs) are known to enhance the durability of metal halide perovskite solar cells (PSCs). Using density functional theory calculations, we found that phosphine-containing molecules have the strongest binding energy among members of a library of Lewis base molecules studied herein. Experimentally, we found that the best inverted PSC treated with 1,3-bis(diphenylphosphino)propane (DPPP), a diphosphine Lewis base that passivates, binds, and bridges interfaces and GBs, retained a power conversion efficiency (PCE) slightly higher than its initial PCE of ~23% after continuous operation under simulated AM1.5 illumination at the maximum power point and at ~40°C for >3500 hours. DPPP-treated devices showed a similar increase in PCE after being kept under open-circuit conditions at 85°C for >1500 hours.

14 SOLAR ENERGY↗
DOE OSTI2020

Assessing atomically thin delta-doping of silicon using mid-infrared ellipsometry

Hydrogen lithography has been used to template phosphine-based surface chemistry to fabricate atomic-scale devices, a process we abbreviate as atomic precision advanced manufacturing (APAM). In this work, we use mid-infrared variable angle spectroscopic ellipsometry (IR-VASE) to characterize single-nanometer thickness phosphorus dopant layers (δ-layers) in silicon made using APAM compatible processes. A large Drude response is directly attributable to theδ-layer and can be used for nondestructive monitoring of the condition of the APAM layer when integrating additional processing steps. Furthermore, the carrier density and mobility extracted from our room temperature IR-VASE measurements are consistent with cryogenic magneto-transport measurements, showing that APAM δ-layers function at room temperature. Finally, the permittivity extracted from these measurements shows that the doping in the APAM δ-layers is so large that their low-frequency in-plane response is reminiscent of a silicide. However, there is no indication of a plasma resonance, likely due to reduced dimensionality and/or low scattering lifetime.

2D material↗
DOE OSTI2020

Materials Data on PH4I by Materials Project

PH4I is Silicon tetrafluoride-derived structured and crystallizes in the tetragonal P4/nmm space group. The structure is zero-dimensional and consists of two hydriodic acid molecules and two phosphine molecules.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on PH4Br by Materials Project

PH4Br is Silicon tetrafluoride-derived structured and crystallizes in the tetragonal P4/nmm space group. The structure is zero-dimensional and consists of two hydrobromic acid molecules and two phosphine molecules.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Si3PH9 by Materials Project

(SiH3)3P is High Pressure (4-7GPa) Tellurium structured and crystallizes in the monoclinic P2_1/c space group. The structure is zero-dimensional and consists of four phosphine, trisilyl- molecules. there are three inequivalent Si4- sites. In the first Si4- site, Si4- is bonded to one P5+ and three H+0.78+ atoms to form corner-sharing SiPH3 tetrahedra. The Si–P bond length is 2.26 Å. All Si–H bond lengths are 1.49 Å. In the second Si4- site, Si4- is bonded to one P5+ and three H+0.78+ atoms to form corner-sharing SiPH3 tetrahedra. The Si–P bond length is 2.26 Å. All Si–H bond lengths are 1.49 Å. In the third Si4- site, Si4- is bonded to one P5+ and three H+0.78+ atoms to form corner-sharing SiPH3 tetrahedra. The Si–P bond length is 2.26 Å. There is two shorter (1.49 Å) and one longer (1.50 Å) Si–H bond length. P5+ is bonded in a distorted T-shaped geometry to three Si4- atoms. There are nine inequivalent H+0.78+ sites. In the first H+0.78+ site, H+0.78+ is bonded in a single-bond geometry to one Si4- atom. In the second H+0.78+ site, H+0.78+ is bonded in a single-bond geometry to one Si4- atom. In the third H+0.78+ site, H+0.78+ is bonded in a single-bond geometry to one Si4- atom. In the fourth H+0.78+ site, H+0.78+ is bonded in a single-bond geometry to one Si4- atom. In the fifth H+0.78+ site, H+0.78+ is bonded in a single-bond geometry to one Si4- atom. In the sixth H+0.78+ site, H+0.78+ is bonded in a single-bond geometry to one Si4- atom. In the seventh H+0.78+ site, H+0.78+ is bonded in a single-bond geometry to one Si4- atom. In the eighth H+0.78+ site, H+0.78+ is bonded in a single-bond geometry to one Si4- atom. In the ninth H+0.78+ site, H+0.78+ is bonded in a single-bond geometry to one Si4- atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on La(SiP3)2 by Materials Project

LaSi2P6 crystallizes in the orthorhombic Cmc2_1 space group. The structure is two-dimensional and consists of sixteen lanthanum molecules; sixteen phosphine molecules; and four Si2P5 sheets oriented in the (0, 1, 0) direction. In each Si2P5 sheet, there are four inequivalent Si4- sites. In the first Si4- site, Si4- is bonded to four P1+ atoms to form corner-sharing SiP4 tetrahedra. There are a spread of Si–P bond distances ranging from 2.20–2.29 Å. In the second Si4- site, Si4- is bonded to four P1+ atoms to form corner-sharing SiP4 tetrahedra. There are a spread of Si–P bond distances ranging from 2.23–2.31 Å. In the third Si4- site, Si4- is bonded to four P1+ atoms to form corner-sharing SiP4 tetrahedra. There are a spread of Si–P bond distances ranging from 2.23–2.28 Å. In the fourth Si4- site, Si4- is bonded to four P1+ atoms to form corner-sharing SiP4 tetrahedra. There are a spread of Si–P bond distances ranging from 2.24–2.29 Å. There are twelve inequivalent P1+ sites. In the first P1+ site, P1+ is bonded in a water-like geometry to two Si4- atoms. In the second P1+ site, P1+ is bonded in a single-bond geometry to one Si4- atom. In the third P1+ site, P1+ is bonded in a water-like geometry to two Si4- atoms. In the fourth P1+ site, P1+ is bonded in a single-bond geometry to one Si4- atom. In the fifth P1+ site, P1+ is bonded in a single-bond geometry to one Si4- atom. In the sixth P1+ site, P1+ is bonded in a water-like geometry to two equivalent Si4- atoms. In the seventh P1+ site, P1+ is bonded in an L-shaped geometry to two equivalent Si4- atoms. In the eighth P1+ site, P1+ is bonded in a single-bond geometry to one Si4- atom. In the ninth P1+ site, P1+ is bonded in a water-like geometry to two equivalent Si4- atoms. In the tenth P1+ site, P1+ is bonded in a water-like geometry to two Si4- atoms. In the eleventh P1+ site, P1+ is bonded in a bent 120 degrees geometry to two Si4- atoms. In the twelfth P1+ site, P1+ is bonded in a water-like geometry to two equivalent Si4- atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on PH8BrN4 by Materials Project

P(NH2)4Br crystallizes in the tetragonal P4/nbm space group. The structure is zero-dimensional and consists of eight ammonia molecules, two hydrobromic acid molecules, and two phosphine molecules.

36 MATERIALS SCIENCE↗