Mercury cadmium telluride photodiode
High speed (Hg,Cd)Te photodiode detectors sensitive to 10.6 microns radiation with operating temperature range of 77 to 90 K
Soderman, D. A.↗
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Infrared 10.6-micron photodiode heterodyne detection
IR photodiode heterodyne detection, deriving noise equivalent power, conversion gain, frequency response, local oscillator power and IF amplifier noise factor
Arams, F. R.↗
Photodiodes for ten micrometer laser communication systems
The performance is discussed of 10-micron mercury-cadmiumtelluride and lead-tin-telluride photodiodes in laser heterodyne communication systems. The dependence of detector quantum efficiency, resistance, frequency response, and signal-to-noise ratio on temperature, bias, and local oscillator power are examined. Included in the discussion is an analysis of the feasibility of high temperature operation, and ability of the detector to dissipate power to a heat sink is explored. Some aspects of direct detection response are considered and figures showing flux levels from a blackbody presented.
Cohen, S. C.↗
Development of a (Hg, Cd)Te photodiode detector, Phase 2
High speed sensitive (Hg,Cd)Te photodiode detectors operating in the 77 to 90 K temperature range have been developed for the 10.6 micron spectral region. P-N junctions formed by impurity (gold) diffusion in p-type (Hg, Cd) Te have been investigated. It is shown that the bandwidth and quantum efficiency of a diode are a constant for a fixed ratio of mobility/lifetime ratio of minority carriers. The minority carrier mobility and lifetime uniquely determine the bandwidth and quantum efficiency and indicate the shallow n on p (Hg,Cd) Te diodes are preferable as high performance, high frequency devices.
Source record↗
HgCdTe photodiodes for CO2 laser systems
A recently developed long-wave infrared detector, the photovoltaic HgCdTe, has many advantages which may solve some of the system problems that have impeded the development of carbon dioxide systems. The detectors are available for operation in the temperature range from 77 K to 146 K. Noise problems inherent in a number of conventional detection techniques can be overcome by a suitably implemented optical heterodyne method. Aspects of heterodyne detector development are discussed along with questions concerning the HgCdTe photodiodes which are available.
Koehler, T.↗
A 1.06 micrometer avalanche photodiode receiver
The development of a complete solid state 1.06 micron optical receiver which can be used in optical communications at data rates approaching 1.5 Gb/s, or in other applications requiring sensitive, short pulse detection, is reported. This work entailed both the development of a new type of heterojunction III-V semiconductor alloy avalanche photodiode and an extremely charge-sensitive wideband low noise preamp design making use of GaAs Schottky barrier-gate field effect transistors (GAASFET's) operating in in the negative-feedback transimpedance mode. The electrical characteristics of the device are described.
Eden, R. C.↗
The 1.06 micrometer avalanche photodiode detectors with integrated circuit preamplifiers
The development of a complete solid state 1.06 micron optical receiver which can be used in optical communications at data rates approaching 1.5 Gb/s, or in other applications requiring sensitive, short-pulse detection, is reported. This work entailed both the development of a new type of heterojunction 3-5 semiconductor alloy avalanche photodiode and an extremely charge-sensitive wideband low-noise preamp design making use of GaAs Schottky barrier-gate field effect transistors.
Eden, R. C.↗
Ion implanted photodiode detectors in epitaxial /Ga/x/In/1-x//As
Ion implanted p-n junction photodiodes in epitaxially grown (Ga(x)In(1-x))As material are reported on here. Photoresponse in these diodes was investigated for approximately the entire composition range of x between zero and one. High values for quantum efficiency were obtained for the devices with a high value of x.
Ajmera, P. K.↗
Fabrication and performance of intrinsic germanium photodiodes
The paper presents fabrication details for an intrinsic germanium photodiode developed for study of atmospheric constituents, the airglow and auroras in the 1-2 micron spectral range. Attention is given to cutting of the single crystal, spreading of the lithium dispersion, sputtering of a gold coating, and surface passivation. A wavelength response curve is presented.
Beiting, E. J., III↗
Photodiode and photomultiplier areal sensitivity anomalies
Several silicon photodiodes and photomultipliers were tested to determine signal variations as a light spot was scanned over the photosensitive surface of these detectors. Qualitative and quantitative data is presented to demonstrate the areal sensitivity anomalies. These anomalies are related back to the fabrication techniques of the manufacturers.
Youngbluth, O., Jr.↗
Self-scanned photodiode array - High performance operation in high dispersion astronomical spectrophotometry
A multichannel spectrophotometric detector system has been developed using a 1024 element self-scanned silicon photodiode array, which is now in routine operation with the high-dispersion coude spectrograph of the University of Texas McDonald Observatory 2.7-m telescope. Operational considerations in the use of such arrays for high precision and low light level spectrophotometry are discussed. A detailed description of the system is presented. Performance of the detector as measured in the laboratory and on astronomical program objects is described, and it is shown that these arrays are highly effective detectors for high dispersion astronomical spectroscopy.
Vogt, S. S.↗
State-of-the-art performance of GaAlAs/GaAs avalanche photodiodes
Ga(0.15)Al(0.85)As/GaAs avalanche photodiodes have been successfully fabricated. The performance of these detectors is characterized by a rise time of less than 35 ps, an external quantum efficiency with an antireflection coating of 95% at 0.53 microns, and a microwave optical gain of 42 dB. The dark current density is in the low range (10 to the minus A/sq cm) at one-half the breakdown voltages, and rises to 0.0001 A/sq cm at 42 dB optical gain.
Law, H. D.↗
Conceptual design and applications of HgCdTe infrared photodiodes for heterodyne systems
The significance of HgCdTe photodiodes are discussed relative to their existance in heterodyne detection systems operating in the 9 to 11 micrometer CO2 laser wavelength region. Their successful fabrication as well as the physical properties of the materials are described. The implementation of controlled industrial processes are reported with emphasis on the yield of predictable and repeatable detector characteristics to the discriminating systems, demands for high cutoff frequencies, quantum efficiency, and reliability. The most salient production steps and diode characteristics are presented. Measured results from production units are also given.
Sirieix, M. B.↗
A linear photodiode array employed in a short range laser triangulation obstacle avoidance sensor
An opto-electronic receiver incorporating a multi-element linear photodiode array as a component of a laser-triangulation rangefinder was developed as an obstacle avoidance sensor for a Martian roving vehicle. The detector can resolve the angle of laser return in 1.5 deg increments within a field of view of 30 deg and a range of five meters. A second receiver with a 1024 elements over 60 deg and a 3 meter range is also documented. Design criteria, circuit operation, schematics, experimental results and calibration procedures are discussed.
Odenthal, J. P.↗
Intensified silicon photodiode array detector linearity Application to coherent anti-Stokes Raman spectroscopy
The linearity of an intensified silicon photodiode array multichannel detector is studied with coherent anti-Stokes Raman and other similar signals. Studies with diffuse and focused (spherically and cylindrically) signals resolved apparent saturation problems which limit the dynamic range of the detector. In addition, it has been shown that there is no short-range wavelength (473-532-nm) dependence on this saturation. Theoretical explanations for these phenomena are also included.
Antcliff, R. R.↗
Avalanche Photodiode Statistics in Triggered-avalanche Detection Mode
The output of a triggered avalanche mode avalanche photodiode is modeled as Poisson distributed primary avalanche events plus conditionally Poisson distributed trapped carrier induced secondary events. The moment generating function as well as the mean and variance of the diode output statistics are derived. The dispersion of the output statistics is shown to always exceed that of the Poisson distribution. Several examples are considered in detail.
Tan, H. H.↗
Radiation effects induced in pin photodiodes by 40- and 85-MeV protons
PIN photodiodes were bombarded with 40- and 85-MeV protons to a fluence of 1.5 x 10 to the 11th power p/sq cm, and the resulting change in spectral response in the near infrared was determined. The photocurrent, dark current and pulse amplitude were measured as a function of proton fluence. Changes in these three measured properties are discussed in terms of changes in the diode's spectral response, minority carrier diffusion length and depletion width. A simple model of induced radiation effects is presented which is in good agreement with the experimental results. The model assumes that incident protons produce charged defects within the depletion region simulating donor type impurities.
Becher, J.↗
Photon Detection with Cooled Avalanche Photodiodes: Theory and Preliminary Experimental Results
Avalanche photodiodes (APDs) can be operated in a geiger-tube mode so that they can respond to single electron events and thus be used as photon counting detectors. Operational characteristics and theory of APDs while used in this mode are analyzed and assessed. Preliminary experimental investigation of several commercially available APDs has commenced, and initial results for dark count statistics are presented.
Robinson, D. L.↗