Experimental feasibility study of water-filled capillary-pumped heat-transfer loops
Water-filled capillary pumped heat transfer loops for removal of waste heat from spacecraft power devices
HEAT TRANSFER↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Kilovolt dc solid state remote power controller development
The experience gained in developing and applying solid state power controller (SSPC) technology at high voltage dc (HVDC) potentials and power levels of up to 25 kilowatts is summarized. The HVDC switching devices, power switching concepts, drive circuits, and very fast acting overcurrent protection circuits were analyzed. A 25A bipolar breadboard with Darlington connected switching transistor was built. Fault testing at 900 volts was included. A bipolar transistor packaged breadboard design was developed. Power MOSFET remote power controller (RPC) was designed.
Mitchell, J. T.↗
Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices (Invited)
As illustrated by the invited paper at this conference and other works, SiC wafers and epilayers contain a variety of crystallographic imperfections, including micropipes, closed-core screw dislocations, grain boundaries, basal plane dislocations, heteropolytypic inclusions, and surfaces that are often damaged and contain atomically rough features like step bunching and growth pits or hillocks. Present understanding of the operational impact of various crystal imperfections on SiC electrical devices is reviewed, with an emphasis placed on high-field SiC power devices and circuits.
Neudeck, Philip G.↗
Whispering-Gallery Mode-Locked Lasers
Mode-locked lasers of a proposed type would incorporate features of the design and operation of previously demonstrated miniature electro-optical modulators and erbium-doped glass lasers that contain whispering-gallery-mode (WGM) resonators. That is to say, WGM lasers and WGM electro-optical modulators would be integrated into monolithic units that, when suitably excited with pump light and microwaves, would function as mode-locked lasers. The proposed devices are intended to satisfy an anticipated demand for compact, low-power devices that could operate in the optical-communication wavelength band centered at a wavelength of 1.55 m and could generate pulses as short as picoseconds at repetition rates of multiple gigahertz.
Matsko, Andrey↗
Hand Held Device for Wireless Powering and Interrogation of Biomems Sensors and Actuators
A compact, hand-held device for wireless powering, interrogation and data retrieval from at least one implanted sensor. The hand-held device includes an antenna for powering an implanted sensor and for receiving data from the implanted sensor to the hand-held device for at least one of storage, display or analysis. The hand-held device establishes electromagnetic coupling with a low radiating radio frequency power inductor in the implanted sensor at a predefined separation and the antenna geometry allows for the antenna to power, interrogate and retrieve data from the implanted sensor without strapping the hand-held device to a human body housing the implanted sensor The hand-held device optionally allows for activation of the implanted sensor only during interrogation and data retrieval.
Miranda, Felix Antonio↗
High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration
A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources: a nominal 300 Volt high voltage input bus and a nominal 28 Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power auxiliary supplies, and two parallel 7.5 kilowatt (kW) discharge power supplies that are capable of providing up to 15 kilowatts of total power at 300 to 500 Volts (V) to the thruster. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall effect thruster. The performance of the unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate exceptional performance with full power efficiencies exceeding 97%. The unit was also tested with a 12.5kW Hall effect thruster to verify compatibility and output filter specifications. With space-qualified silicon carbide or similar high voltage, high efficiency power devices, this would provide a design solution to address the need for high power electric propulsion systems.
Power↗
Design of an Ultra-High Efficiency GaN High-Power Amplifier for SAR Remote Sensing
This work describes the development of a high-power amplifier for use with a remote sensing SAR system. The amplifier is intended to meet the requirements for the Sweep-SAR technique for use in the proposed DESDynI SAR instrument. In order to optimize the amplifier design, active load-pull technique is employed to provide harmonic tuning to provide efficiency improvements. In addition, some of the techniques to overcome the challenges of load-pulling high power devices are presented. The design amplifier was measured to have 49 dBm of output power with 75% PAE, which is suitable to meet the proposed system requirements.
active load-pull↗
Performance Evaluation of High-Speed, Low-Side Gate Driver, FAN3122, over Extended Temperature Range
Emerging power metal-oxide semiconductor field-effect transistor (MOSFETs) based on silicon carbide and gallium nitride technology are finding widespread use in many electronic applications such as motor control and DC/DC converters due to their higher voltage, higher temperature tolerance, and higher frequency switching capabilities. To utilize these power devices and to meet circuit/system compactness, modularity, and operational functionality, gate drivers that provide unique attributes, such as fast switching and high-current handling capability, are needed. In addition, power systems geared for use in space mission applications require on-board devices to withstand exposure to extreme temperatures and wide thermal swings. Very little data, however, exist on the performance of such devices and circuits under extreme temperatures. In this work, the performance of a high-speed gate driver with potential use in controlling power-level transistors was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.
Wide Bandgap Semiconductors↗
Computational Modeling Program
An Integrated Product Team (IPT) has been formed at NASA Ames Research Center which has set objectives to investigate devices and processes suitable for meeting NASA requirements on ultrahigh performance computers, fast and low power devices, and high temperature wide bandgap materials. These devices may ultimately be sub-100nm feature-size. Processes and equipment must meet the stringent demands posed by the fabrication of such small devices. Until now, the reactors for Chemical Vapor Deposition (CVD) and plasma processes have been designed by trial and error procedures. Further, once the reactor is in place, optimum processing parameters are found through expensive and time-consuming experimentation. If reliable models are available that describe processes and the operation of the reactors, that chore would be reduced to a routine task while being a cost-effective option. The goal is to develop such a design tool, validate that tool using available data from current generation processes and reactors, and then use that tool to explore avenues for meeting NASA needs for ultrasmall device fabrication. Under the present grant, ARL/Penn State along with other IPT members has been developing models and computer code to meet IPT goals. Some of the accomplishments achieved during the first year of the grant are described in this report
Govindan, T. R.↗
High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration
A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources - a nominal 300-Volt high voltage input bus and a nominal 28-Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power supplies that provide power to the thruster auxiliary supplies, and two parallel 7.5 kilowatt power supplies that are capable of providing up to 15 kilowatts of total power at 300-Volts to 500-Volts to the thruster discharge supply. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall Effect Thruster. The performance of unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate the exceptional performance with full power efficiencies exceeding 97. With a space-qualified silicon carbide or similar high voltage, high efficiency power device, this design could evolve into a flight design for future missions that require high power electric propulsion systems.
Technology↗
Dc-To-Dc Converter Uses Reverse Conduction Of MOSFET's
In modified high-power, phase-controlled, full-bridge, pulse-width-modulated dc-to-dc converters, switching devices power metal oxide/semiconductor field-effect transistors (MOSFET's). Decreases dissipation of power during switching by eliminating approximately 0.7-V forward voltage drop in anti-parallel diodes. Energy-conversion efficiency increased.
Gruber, Robert P.↗
Inorganic Photovoltaics Materials and Devices: Past, Present, and Future
This report describes recent aspects of advanced inorganic materials for photovoltaics or solar cell applications. Specific materials examined will be high-efficiency silicon, gallium arsenide and related materials, and thin-film materials, particularly amorphous silicon and (polycrystalline) copper indium selenide. Some of the advanced concepts discussed include multi-junction III-V (and thin-film) devices, utilization of nanotechnology, specifically quantum dots, low-temperature chemical processing, polymer substrates for lightweight and low-cost solar arrays, concentrator cells, and integrated power devices. While many of these technologies will eventually be used for utility and consumer applications, their genesis can be traced back to challenging problems related to power generation for aerospace and defense. Because this overview of inorganic materials is included in a monogram focused on organic photovoltaics, fundamental issues and metrics common to all solar cell devices (and arrays) will be addressed.
Hepp, Aloysius F.↗
Personnel occupied woven envelope robot
The use of nonmetallic or fabric structures for space application is considered. The following structures are suggested: (1) unpressurized space hangars; (2) extendable tunnels for soft docking; and (3) manned habitat for space stations, storage facilities, and work structures. The uses of the tunnel as a passageway: for personnel and equipment, eliminating extravehicular activity, for access to a control cabin on a space crane and between free flyers and the space station are outlined. The personnal occupied woven envelope robot (POWER) device is shown. The woven envelope (tunnel) acts as part of the boom of a crane. Potential applications of POWER are outlined. Several possible deflection mechanisms and design criteria are determined.
Wessling, F. C.↗
Status of Electrical Actuator Applications
An ever increasing number of actuation functions historically performed by hydraulics or pneumatics are being accomplished by electric actuation. If 'end to end' systems are considered, electric actuators (EA's) are potentially lighter and more efficient. In general, system redundancies may be more easily implemented and operationally monitored. Typically, electrical components exhibit longer mean times to failure and projected lifetime costs of EA's are potentially much lower than those of other options. EA's have certain characteristics which must be considered in their application. The actual mechanical loadings must be established, for the more easily controlled EA may be operated much closer to its full capabilities. At higher rates of motion, EA's are operating as constant power devices. Therefore, it may be possible to start a movement that can not be stopped. The incorporation of high power electronics into remote locations introduces new concerns of EMI and thermal control. It is the management of these and other characteristics that forms the engineering design challenges. Work is currently in progress on EA's for aircraft and expendable launch vehicles. These applications span from ten to 40+ horsepower. The systematics and status of these actuators will be reported along with current technical trends in this area.
Roth, Mary Ellen↗
1000 Hours of Testing Completed on 10-kW Hall Thruster
Between the months of April and August 2000, a 10-kW Hall effect thruster, designated T- 220, was subjected to a 1000-hr life test evaluation. Hall effect thrusters are propulsion devices that electrostatically accelerate xenon ions to produce thrust. Hall effect propulsion has been in development for many years, and low-power devices (1.35 kW) have been used in space for satellite orbit maintenance. The T-220, shown in the photo, produces sufficient thrust to enable efficient orbital transfers, saving hundreds of kilograms in propellant over conventional chemical propulsion systems. This test is the longest operation ever achieved on a high-power Hall thruster (greater than 4.5 kW) and is a key milestone leading to the use of this technology for future NASA, commercial, and military missions.
Mason, Lee S.↗
Development of practical high temperature superconducting wire for electric power application
The technology of high temperature superconductivity has gone from beyond mere scientific curiousity into the manufacturing environment. Single lengths of multifilamentary wire are now produced that are over 200 meters long and that carry over 13 amperes at 77 K. Short-sample critical current densities approach 5 x 104 A/sq cm at 77 K. Conductor requirements such as high critical current density in a magnetic field, strain-tolerant sheathing materials, and other engineering properties are addressed. A new process for fabricating round BSCCO-2212 wire has produced wires with critical current densities as high as 165,000 A/sq cm at 4.2 K and 53,000 A/sq cm at 40 K. This process eliminates the costly, multiple pressing and rolling steps that are commonly used to develop texture in the wires. New multifilamentary wires with strengthened sheathing materials have shown improved yield strengths up to a factor of five better than those made with pure silver. Many electric power devices require the wire to be formed into coils for production of strong magnetic fields. Requirements for coils and magnets for electric power applications are described.
Hawsey, Robert A.↗
Pulsed Plasma Accelerator Modeling
This report presents the main results of the modeling task of the PPA project. The objective of this task is to make major progress towards developing a new computational tool with new capabilities for simulating cylindrically symmetric 2.5 dimensional (2.5 D) PPA's. This tool may be used for designing, optimizing, and understanding the operation of PPA s and other pulsed power devices. The foundation for this task is the 2-D, cylindrically symmetric, magnetohydrodynamic (MHD) code PCAPPS (Princeton Code for Advanced Plasma Propulsion Simulation). PCAPPS was originally developed by Sankaran (2001, 2005) to model Lithium Lorentz Force Accelerators (LLFA's), which are electrode based devices, and are typically operated in continuous magnetic field to the model, and implementing a first principles, self-consistent algorithm to couple the plasma and power circuit that drives the plasma dynamics.
Goodman, M.↗
Power
The space station requires an increase in power or energy of at least several orders of magnitude compared to previous space missions. With the requirement up in the range of 10 kilowatt hours, this obviiously requires the development of new technology. Although the power area is very well integrated in the spacecraft itself, it represents a diverse set of components necessary for energy conversion, electronics, and energy distribution. Considerable work is ongoing at NASA Lewis in the power devices development area, including transformers, large area solid-state chips, transistors, and fast recovery diodes. This work is oriented toward eventual application to both AC and DC power conversion approaches. In the energy storage area, there are many options available to fit into the space station representing various degrees of risk and leverage combination, such as the near-term integral-pressure-vessel nickel hydrogen battery, an advanced Ni-H2 battery concept, and the regenrative hydrogen-oxygen system utilizing essentially the Shuttle orbiter type of fuel cell.
Corbett, R.↗