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At least 109 records · Page 6

Tree tensor network hierarchical equations of motion based on time-dependent variational principle for efficient open quantum dynamics in structured thermal environments

In this work, we introduce an efficient method, TTN-HEOM, for exactly calculating the open quantum dynamics for driven quantum systems interacting with highly structured bosonic baths by combining the tree tensor network (TTN) decomposition scheme with the bexcitonic generalization of the numerically exact hierarchical equations of motion (HEOM). The method yields a series of quantum master equations for all core tensors in the TTN that efficiently and accurately capture the open quantum dynamics for non-Markovian environments to all orders in the system–bath interaction. These master equations are constructed based on the time-dependent Dirac–Frenkel variational principle, which isolates the optimal dynamics for the core tensors given the TTN ansatz. The dynamics converges to the HEOM when increasing the rank of the core tensors, a limit in which the TTN ansatz becomes exact. We introduce TENSO, tensor equations for non-Markovian structured open systems, as a general-purpose Python code to propagate the TTN-HEOM dynamics. We implement three general propagators for the coupled master equations: two fixed-rank methods that require a constant memory footprint during the dynamics and one adaptive-rank method with a variable memory footprint controlled by the target level of computational error. We exemplify the utility of these methods by simulating a two-level system coupled to a structured bath containing one Drude–Lorentz component and eight Brownian oscillators, which is beyond what can presently be computed using the standard HEOM. Our results show that the TTN-HEOM is capable of simulating both dephasing and relaxation dynamics of driven quantum systems interacting with structured baths, even those of chemical complexity, with an affordable computational cost.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH

Gratings and Random Reflectors for Near-Infrared PIN Diodes

Crossed diffraction gratings and random reflectors have been proposed as means to increase the quantum efficiencies of InGaAs/InP positive/intrinsic/ negative (PIN) diodes designed to operate as near-infrared photodetectors. The proposal is meant especially to apply to focal-plane imaging arrays of such photodetectors to be used for near-infrared imaging. A further increase in quantum efficiency near the short-wavelength limit of the near-infrared spectrum of such a photodetector array could be effected by removing the InP substrate of the array. The use of crossed diffraction gratings and random reflectors as optical devices for increasing the quantum efficiencies of quantum-well infrared photodetectors (QWIPs) was discussed in several prior NASA Tech Briefs articles. While the optical effects of crossed gratings and random reflectors as applied to PIN photodiodes would be similar to those of crossed gratings and random reflectors as applied to QWIPs, the physical mechanisms by which these optical effects would enhance efficiency differ between the PIN-photodiode and QWIP cases: In a QWIP, the multiple-quantum-well layers are typically oriented parallel to the focal plane and therefore perpendicular or nearly perpendicular to the direction of incidence of infrared light. By virtue of the applicable quantum selection rules, light polarized parallel to the focal plane (as normally incident light is) cannot excite charge carriers and, hence, cannot be detected. A pair of crossed gratings or a random reflector scatters normally or nearly normally incident light so that a significant portion of it attains a component of polarization normal to the focal plane and, hence, can excite charge carriers. A pair of crossed gratings or a random reflector on a PIN photodiode would also scatter light into directions away from the perpendicular to the focal plane. However, in this case, the reason for redirecting light away from the perpendicular is to increase the length of the optical path through the detector to increase the probability of absorption of photons and thereby increase the resulting excitation of charge carriers. A pair of crossed gratings or a random reflector according to the proposal would be fabricated as an integral part of photodetector structure on the face opposite the focal plane (see figure). In the presence of crossed gratings, light would make four passes through the device before departing. In the presence of a random reflector, a significant portion of the light would make more than four passes: After each bounce, light would be scattered at a different random angle, and would have a chance to escape only when it was reflected, relative to the normal, at an angle less than the critical angle for total internal reflection. Given the indices of refraction of the photodiode materials, this angle would be about 17 . This amounts to a very narrow cone for escape of trapped light.

Gunapala, Sarath

The DUV Stability of Superlattice-Doped CMOS Detector Arrays

JPL and Alacron have recently developed a high performance, DUV camera with a superlattice doped CMOS imaging detector. Supperlattice doped detectors achieve nearly 100% internal quantum efficiency in the deep and far ultraviolet, and a single layer, Al2O3 antireflection coating enables 64% external quantum efficiency at 263nm. In lifetime tests performed at Applied Materials using 263 nm pulsed, solid state and 193 nm pulsed excimer laser, the quantum efficiency and dark current of the JPL/Alacron camera remained stable to better than 1% precision during long-term exposure to several billion laser pulses, with no measurable degradation, no blooming and no image memory at 1000 fps.

silicon detectors

High density Schottky barrier IRCCD sensors for SWIR applications at intermediate temperature

Monolithic 32 x 64 and 64 x 1:128 palladium silicide (Pd2Si) interline transfer infrared charge coupled devices (IRCCDs) sensitive in the 1 to 3.5 micron spectral band were developed. This silicon imager exhibits a low response nonuniformity of typically 0.2 to 1.6% rms, and was operated in the temperature range between 40 to 140 K. Spectral response measurements of test Pd2Si p-type Si devices yield quantum efficiencies of 7.9% at 1.25 microns, 5.6% at 1.65 microns 2.2% at 2.22 microns. Improvement in quantum efficiency is expected by optimizing the different structural parameters of the Pd2Si detectors. The spectral response of the Pd2Si detectors fit a modified Fowler emission model. The measured photo-electric barrier height for the Pd2Si detectors is 0.34 eV and the measured quantum efficiency coefficient, C1, is 19%/eV. The dark current level of Pd2Si Schottky barrier focal plane arrays (FPAs) is sufficiently low to enable operation at intermediate temperatures at TV frame rates. Typical dark current level measured at 120 K on the FPA is 2 nA/sq cm. The operating temperature of the Pd2Si FPA is compatible with passive cooler performance. In addition, high density Pd2Si Schottky barrier FPAs are manufactured with high yield and therefore represent an economical approach to short wavelength IR imaging. A Pd2Si Schottky barrier image sensor for push-broom multispectral imaging in the 1.25, 1.65, and 2.22 micron bands is being studied. The sensor will have two line arrays (dual band capability) of 512 detectors each, with 30 micron center-to-center detector spacing. The device will be suitable for chip-to-chip abutment, thus providing the capability to produce large, multiple chip focal planes with contiguous, in-line sensors.

Elabd, H.

Lidar System for Airborne Measurement of Clouds and Aerosols

A lidar system for measuring optical properties of clouds and aerosols at three wavelengths is depicted. The laser transmitter is based on a Nd:YVO4 laser crystal pumped by light coupled to the crystal via optical fibers from laser diodes that are located away from the crystal to aid in dissipating the heat generated in the diodes and their drive circuits. The output of the Nd:YVO4 crystal has a wavelength of 1064 nm, and is made to pass through frequency-doubling and frequency-tripling crystals. As a result, the net laser output is a collinear superposition of beams at wavelengths of 1064, 532, and 355 nm. The laser operates at a pulse-repetition rate of 5 kHz, emitting per-pulse energies of 50 microJ at 1064 nm, 25 microJ at 532 nm and 50 microJ at 355 nm. An important feature of this system is an integrating sphere located between the laser output and the laser beam expander lenses. The integrating sphere collects light scattered from the lenses. Three energy-monitor detectors are located at ports inside the integrating sphere. Each of these detectors is equipped with filters such that the laser output energy is measured independently for each wavelength. The laser output energy is measured on each pulse to enable the most accurate calibration possible. The 1064-nm and 532-nm photodetectors are, more specifically, single photon-counting modules (SPCMs). When used at 1064 nm, these detectors have approximately 3% quantum efficiency and low thermal noise (fewer than 200 counts per second). When used at 532 nm, the SPCMs have quantum efficiency of about 60%. The photodetector for the 355-nm channel is a photon-counting photomultiplier tube having a quantum efficiency of about 20%. The use of photon-counting detectors is made feasible by the low laser pulse energy. The main advantage of photon-counting is ease of inversion of data without need for complicated calibration schemes like those necessary for analog detectors. The disadvantage of photon-counting detectors is that they inherently have narrow dynamic ranges. However, by using photon-counting detectors along with a high-repetition rate laser, it is possible to obtain wide dynamic range through accumulation of counts over many pulses.

McGill, Matthew

Determining the Quantum Detection Efficiency of A Soft X-Ray Micro-Channel Plate Detector for the Lunar Mission, LEXI

Micro-channel plate (MCP) detectors have long been a workhorse for space-based x-ray research and are advantageous over other imaging detectors because of their low size, weight and power. The Lunar Environment heliospheric x-ray Imager (LEXI), will utilize a MCP to image Earth’s magnetosphere in soft x-rays from the lunar surface. A critical element for interpreting on-orbit data is to understand the quantum detection efficiency (QDE) of the MCP. LEXI’s MCP is coated with potassium bromide (KBr) to increase the soft x-ray QDE. Historically, few measurements of QDE exist in the soft x-ray band for KBr detectors. This paper reviews the performance of LEXI’s detector, and the QDE experiment procedure conducted at and results from the Advanced Light Source synchrotron soft x-ray beam line (6.3.2) over the energy range 70eV-1300eV. A unique beam line setup was required to limit the photon flux as to not saturate the pores of the MCP or detector signal chain. The experimental results are similar to previous literature, with some caveats unique to this MCP and experimental setup.

X-ray imaging

High-efficiency broad-area single-quantum-well lasers with narrow single-lobed far-field patterns prepared by molecular beam epitaxy

Broad-area single-quantum-well graded-index waveguide separate-confinement heterostructure lasers were fabricated by molecular beam epitaxy. A high external quantum efficiency of 79 percent and stable, single-lobed far-field patterns with a beam divergence as narrow as 0.8 deg (1.9 times diffraction limit) for a 100 micron-wide laser were obtained under pulsed conditions.

Larsson, A.

Photovoltaic characteristics of n(+)pp(+) InP solar cells grown by OMVPE

The photovoltaic characteristics of n(+)/p/p(+) homojunction InP solar cells fabricated by organometallic vapor-phase epitaxy (OMVPE) are described. The cells are characterized by I-V, C-V and quantum efficiency measurements, and simulations are used to obtain various device and material parameters. The I-V characteristics show a high recombination rate in the depletion region; this is shown to be independent of the impurity used. It is shown that cadmium is easier to use as an acceptor for the p base and p(+) buffer and is therefore beneficial. The high quantum efficiency of 98 percent at long wavelengths measured in these cells indicates a very good collection efficiency in the base. The short-wavelength quantum efficiency is poor, indicating a high surface recombination.

Tyagi, S.

Efficient single-photon emission via quantum-confined charge funneling to quantum dots

Quantum light sources, particularly single-photon emitters (SPEs), are critical for quantum communications and computing. Among them, III-V semiconductor quantum dots (QDs) have demonstrated superior SPE metrics, including near-unity brightness, high photon purity, and indistinguishability, making them especially suitable for quantum applications. However, their overall quantum efficiency—determined by a product of the internal, excitation, and outcoupling efficiencies—remains limited, primarily due to low (typically below 0.1%) excitation efficiency. To mitigate the low efficiency under non-resonant pumping, here we realize liquid droplet etched GaAs QDs in a microscale 3D AlGaAs charge-carrier funnel. The funnel channels charge carriers to the QD and enhances the overall emission efficiency by over one order of magnitude while preserving the SPE behavior. We reveal that a modified energy landscape around the QD leads to the excitation efficiency improvement. These energy landscape-modified QDs can be operated with optical excitation up to 10 μm away, raising the promise of efficient electrically driven QD SPEs for quantum information systems.

Park, Sanghyeok [Sandia National Laboratories (SNL

Unipolar Barrier Dual-Band Infrared Detectors

Dual-band barrier infrared detectors having structures configured to reduce spectral crosstalk between spectral bands and/or enhance quantum efficiency, and methods of their manufacture are provided. In particular, dual-band device structures are provided for constructing high-performance barrier infrared detectors having reduced crosstalk and/or enhance quantum efficiency using novel multi-segmented absorber regions. The novel absorber regions may comprise both p-type and n-type absorber sections. Utilizing such multi-segmented absorbers it is possible to construct any suitable barrier infrared detector having reduced crosstalk, including npBPN, nBPN, pBPN, npBN, npBP, pBN and nBP structures. The pBPN and pBN detector structures have high quantum efficiency and suppresses dark current, but has a smaller etch depth than conventional detectors and does not require a thick bottom contact layer.

Ting, David Z.

Diffusion lengths in irradiated N/P InP-on-Si solar cells

Indium phosphide (InP) solar cells were made on silicon (Si) wafers (InP/Si) by to take advantage of both the radiation-hardness properties of the InP solar cell and the light weight and low cost of Si wafers. The InP/Si cell application is for long duration and/or high radiation orbit space missions. Spire has made N/P InP/Si cells of sizes up to 2 cm by 4 cm with beginning-of-life (BOL) AM0 efficiencies over 13% (one-sun, 28C). These InP/Si cells have higher absolute efficiency and power density after a high radiation dose than gallium arsenide (GaAs) or silicon (Si) solar cells after a fluence of about 2e15 1 MeV electrons/sq. cm. In this work, we investigate the minority carrier (electron) base diffusion lengths in the N/P InP/Si cells. A quantum efficiency model was constructed for a 12% BOL AM0 N/P InP/Si cell which agreed well with the absolutely measured quantum efficiency and the sun-simulator measured AM0 photocurrent (30.1 mA/sq. cm). This model was then used to generate a table of AM0 photocurrents for a range of base diffusion lengths. AM0 photocurrents were then measured for irradiations up to 7.7e16 1 MeV electrons/sq. cm (the 12% BOL cell was 8% after the final irradiation). By comparing the measured photocurrents with the predicted photocurrents, base diffusion lengths were assigned at each fluence level. A damage coefficient K of 4e-8 and a starting (unirradiated) base electron diffusion length of 0.8 microns fits the data well. The quantum efficiency was measured again at the end of the experiment to verify that the photocurrent predicted by the model (25.5 mA/sq. cm) agreed with the simulator-measured photocurrent after irradiation (25.7 mA/sq. cm).

Wojtczuk, Steven

InSb DRO array characteristics

Researchers tested 58 x 62 low-doped InSb diode arrays bonded to MOSFET readouts for their performance potential in a low background space environment. Of primary concern were the quantum efficiency, dark current and read noise. The quantum efficiency (45 percent at 3.3 microns) and dark current (less than 2.4e(-)/s) were found to be adequate for the Space Infrared Telescope Facility (SIRTF) experiments, while the read noise (200 e(-) RMS) was found to be wanting. More subtle concerns, such as image quality, linearity/calibratibility and flat fielding were also investigated. In these respects the arrays appear to be well suited for the high sensitivity, photometric accuracy, and image clarity demanded by the SIRTF experiments.

Forrest, W. J.

Improved Si:As BIBIB (Back-Illuminated Blocked-Impurity-Band) hybrid arrays

Results of a program to increase the short wavelength (less than 10 microns) detective quantum efficiency, eta/beta, of Si:As Impurity Band Conduction arrays are presented. The arrays are epitaxially grown Back-Illuminated Blocked (BIB) Impurity-Band (BIBIB) 10x50 detectors bonded to switched-FET multiplexers. It is shown that the 4.7 microns detective quantum efficiency increases proportionately with the thickness of the infrared active layer. A BIB array with a thick active layer, designed for low dark current, exhibits eta/beta = 7 to 9 percent at 4.7 microns for applied bias voltages between 3 and 5 V. The product of quantum efficiency and photoelectric gain, etaG, increases from 0.3 to 2.5 as the voltage increases from 3 to 5 V. Over this voltage range, the dark current increases from 8 to 120 e(-)s(-1) at a device temperature of 4.2 K and is under 70 e(-)s(-1) for all voltages at 2 K. Because of device gain, the effective dark current (equivalent photon rate) is less than 3 e(-)s(-1) under all operating conditions. The effective read noise (equivalent photon noise) is found to be less than 12 electrons under all operating conditions and for integration times between 0.05 and 100 seconds.

Herter, T.

Low Frequency 1/f Noise on QWIPs, nBn, and Superlattice Focal Plane Array

Noise Equivalent Difference Temperature (NE△T) is a standard performance metric for most infrared focal plane array (FPA) systems. The frequency bandwidth and range associated with NE△T is at high frequency and it does not describe the long time noise behavior or the very low frequency noise of the FPA. Very low frequency noise measurement requires data capture that takes longer time duration and sampling interval. This study investigates low frequency noise in QWIP, nBn and LWIR n-type Complementary Barrier Infrared Detector (CBIRD) FPAs. The corner frequencies are extracted from the power spectral density (PSD) as function of frequency. The peak wavelength, quantum efficiency of QWIP detector are 6.2 µm and 2 %, respectively. QWIP FPA has a mean NE△T ~ 25 mK at an operating temperature of 65 K and an integration time of 16 msec. The mean QWIP PSD plot shows a corner frequency of < 0.5 mHz. The nBn FPA with 4 µm cut off and quantum efficiency of 67 % has NE△T ~ 15.6 mK at an integration time ~ 7.52 msec and an operating temperature of 120 K. The nBn has corner frequency of > 50 mHz. Lastly the n-type CBIRD FPA with a 50% cutoff at 8.8 µm and quantum efficiency of ~ 50 % has an NE△T ~ 18.6 mK at an integration time of 1.86 msec and operating temperature 120 K. The superlattice FPA has a corner frequency ~ 10 mHz. The investigation of the tail on the NE△T histogram reveals that its origin is not accounted for entirely by the high noise current, but also it needs the inclusion of lower responsivity for some pixels.

Pepper, B.

Dynamic in vivo monitoring of granum structural changes of Ctenanthe setosa (Roscoe) Eichler during drought stress and subsequent recovery

Investigating the effects of drought stress and subsequent recovery on the structure and function of chloroplasts is essential to understanding how plants adapt to environmental stressors. We investigated Ctenanthe setosa (Roscoe) Eichler, an ornamental plant that can tolerate prolonged drought periods (40 and 49 days of water withdrawal). Conventional biochemical, biophysical, physiological and (ultra)structural methods combined for the first time in a higher plant with in vivo small-angle neutron scattering (SANS) were used to characterize the alterations induced by drought stress and subsequent recovery. Upon drought stress, no significant changes occurred in the chloroplast ultrastructure, chlorophyll content, 77K fluorescence emission spectra and maximal quantum efficiency of PSII (Qy dark), but the actual quantum efficiency of PSII (Qy light) decreased, the amounts of PSI-LHCII complexes and PSII monomers declined, and that of PSII supercomplexes increased. Thickness of the leaf and of the adaxial hypodermis, chloroplast length and granum repeat distance (RD) values decreased upon drought stress, as shown by light microscopy and SANS, respectively. Because of the very slight (nm-range) changes in RD values, the large biological variability (significant differences in RD values among the leaves and studied leaf regions) and the invasive sampling required for this method, transmission electron microscopy (TEM) hardly showed significant differences. On the other side, in situ SANS analyses provided a unique insight in vivo into the fast structural recovery of the granum structure of drought-stressed leaves, which happened already 18 h after re-watering, while functional and biochemical recovery took place on a longer time scale.

59 BASIC BIOLOGICAL SCIENCES

Enhancement of X-ray performance with new GEC charged coupled devices (CCD)

Samples of two GEC charge coupled devices with enhanced X-ray performance have been tested. The P8607, fabricated with reduced linear dimensions, gives the lowest detector noise reported for Fe-55 with a CCD. The deep depletion device P8600-HR gives the best combination of energy resolution and quantum efficiency at 6 keV. The energy resolution vs quantum efficiency trade-off curve are discussed.

Schwartz, D. A.

Iridium Film For Charge-Coupled Device

Usability extended to different environments. Application of thin film of iridium to back surface of back-surface-illuminated charge-coupled device expected to increase and stabilize quantum efficiency at wavelengths less than 4,500 Angstrom. Enhances quantum efficiency according to principle discussed in "Metal Film Increases CCD Output" (NPO-16815). Does not react with hydrogen, so device need not be kept in oxygen: Advantage where high absorption of ultraviolet light by oxygen undesirable; for example, when device used to make astronomical observations from high altitudes.

Hecht, Michael H.

Efficient bidirectional quantum frequency conversion between telecom and visible bands using adaptively phase-matched III-V nanophotonic waveguides

Quantum frequency conversion (QFC) is essential for interfacing quantum systems operating at different wavelengths and for realizing scalable quantum networks. Despite extensive progress, achieving QFC with simultaneous high efficiency, low pump power, minimal noise, broad bandwidth, and pump-wavelength flexibility remains challenging. Here, we demonstrate efficient, low-noise, and bidirectional QFC between the telecom (1550-nm) and visible (780-nm) bands using unpoled indium gallium phosphide (InGaP) χ (2) nanophotonic waveguides, eliminating the need for a long-wavelength pump. Leveraging the large nonlinear susceptibility of InGaP together with adaptive phase-matching control, we obtain 27% (55%) internal efficiency in a 6-mm (2.5-mm)-long waveguide with a low pump power of 20 mW (50 mW) and a noise flux spectral density of 10 −4 counts per second per hertz at signal–pump detuning of 20 nm. These results mark a significant advance in integrated nonlinear photonics for high-performance QFC, facilitating the development of versatile and scalable quantum networks.

Hu, Jierui [Univ. of Illinois at Urbana-Champaign,