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99 records · Page 6

Robust, Radiation Tolerant Command and Data Handling and Power System Electronics for SmallSats

In today's budgetary environment, there is significant interest within the National Aeronautics and Space Administration (NASA) to enable small robotic science missions that can be executed faster and cheaper than previous larger missions. To help achieve this, focus has shifted from using exclusively radiation-tolerant or radiation-hardened parts to using more commercial-off-the-shelf (COTS) components for NASA small satellite missions that can last at least one year in orbit. However, there are some portions of a spacecraft's avionics, such as the Command and Data Handling (C&DH) subsystem and the Power System Electronics (PSE) that need to have a higher level of reliability that goes beyond what is attainable with currently available COTS parts. While there are a number of COTS components that can withstand a total ionizing dose (TID) of tens or hundreds of kilorads, there is still a great deal of concern about tolerance to and mitigation of single-event effects (SEE).

6U satellite↗

Single Particle Damage Events in Candidate Star Camera Sensors

Si charge coupled devices (CCDs) are currently the preeminent detector in star cameras as well as in the near ultraviolet (uv) to visible wavelength region for astronomical observations in space and in earth-observing space missions. Unfortunately, the performance of CCDs is permanently degraded by total ionizing dose (TID) and displacement damage effects. TID produces threshold voltage shifts on the CCD gates and displacement damage reduces the charge transfer efficiency (CTE), increases the dark current, produces dark current nonuniformities and creates random telegraph noise in individual pixels. In addition to these long term effects, cosmic ray and trapped proton transients also interfere with device operation on orbit. In the present paper, we investigate the dark current behavior of CCDs - in particular the formation and annealing of hot pixels. Such pixels degrade the ability of a CCD to perform science and also can present problems to the performance of star camera functions (especially if their numbers are not correctly anticipated). To date, most dark current radiation studies have been performed by irradiating the CCDs at room temperature but this can result in a significantly optimistic picture of the hot pixel count. We know from the Hubble Space Telescope (HST) that high dark current pixels (so-called hot pixels or hot spikes) accumulate as a function of time on orbit. For example, the HST Advanced Camera for Surveys/Wide Field Camera instrument performs monthly anneals despite the loss of observational time, in order to partially anneal the hot pixels. Note that the fact that significant reduction in hot pixel populations occurs for room temperature anneals is not presently understood since none of the commonly expected defects in Si (e.g. divacancy, E center, and A-center) anneal at such a low temperature. A HST Wide Field Camera 3 (WFC3) CCD manufactured by E2V was irradiated while operating at -83C and the dark current studied as a function of temperature while the CCD was warmed to a sequence of temperatures up to a maximum of +30C. The device was then cooled back down to -83 and re-measured. Hot pixel populations were tracked during the warm-up and cool-down. Hot pixel annealing began below 40C and the anneal process was largely completed before the detector reached +3OC. There was no apparent sharp temperature dependence in the annealing. Although a large fraction of the hot pixels fell below the threshold to be counted as a hot pixel, they nevertheless remained warmer than the remaining population. The details of the mechanism for the formation and annealing of hot pixels is not presently understood, but it appears likely that hot pixels are associated with displacement damage occurring in high electric field regions.

Marshall, Paul↗

Radiation Tests of Highly Scaled, High-Density, Commercial, Nonvolatile NAND Flash Memories - Update 2012

The space radiation environment poses a certain risk to all electronic components on Earth-orbiting and planetary mission spacecraft. In recent years, there has been increased interest in the use of high-density, commercial, nonvolatile flash memories in space because of ever-increasing data volumes and strict power requirements. They are used in a wide variety of spacecraft subsystems. At one end of the spectrum, flash memories are used to store small amounts of mission-critical data such as boot code or configuration files and, at the other end, they are used to construct multi-gigabyte data recorders that record mission science data. This report examines single-event effect (SEE) and total ionizing dose (TID) response in single-level cell (SLC) 32-Gb, multi-level cell (MLC) 64-Gb, and Triple-level (TLC) 64-Gb NAND flash memories manufactured by Micron Technology with feature size of 25 nm.

Irom, Farokh↗

Radiation tests of highly scaled, high-density, commercial, nonvolatile NAND flash memories— update 2012

The space radiation environment poses a certain risk to all electronic components on Earth-orbiting and planetary mission spacecraft. In recent years, there has been increased interest in the use of high-density, commercial, nonvolatile flash memories in space because of ever-increasing data volumes and strict power requirements. They are used in a wide variety of spacecraft subsystems. At one end of the spectrum, flash memories are used to store small amounts of mission-critical data such as boot code or configuration files and, at the other end, they are used to construct multi-gigabyte data recorders that record mission science data. This report examines single-event effect (SEE) and total ionizing dose (TID) response in single-level cell (SLC) 32-Gb, multi-level cell (MLC) 64-Gb, and Triple-level (TLC) 64-Gb NAND flash memories manufactured by Micron Technology with feature size of 25 nm.

Allen, Gregory R.↗

Comparison of TID Response and SEE Characterization of Single and Multi Level High Density NAND Flash Memories

Heavy ion single-event measurements and TID response for 8Gb commercial NAND flash memories are reported. Radiation results of multi-level flash technology are compared with results from single-level flash technology. In general, these commercial high density memories appear to be much less susceptible to SEE and have better TID response compared to older generations of flash memories. The charge pump survived up to 600 krads.

nonvolatile memory↗

NASA Goddard Space Flight Center’s Compendium of Radiation Effects Test Results

Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include FETs, flash memory, FPGAs, optoelectronics, digital, analog, and bipolar devices.

Single Event Effects (SEE)↗

NASA Goddard Space Flight Center’s Compendium of Radiation Effects Test Results

Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include FETs, flash memory, FPGAs, optoelectronics, digital, analog, and bipolar devices.

Single Event Effects (SEE)↗

Radiation Test Results for a MEMS Microshutter Operating at 60 K

The James Webb Space Telescope (JWST), the successor to the Hubble Space Telescope, is due to be launched in 2013 with the goal of searching the very distant Universe for stars that formed shortly after the Big Bang. Because this occurred so far back in time, the available light is strongly red-shifted, requiring the use of detectors sensitive to the infrared portion of the electromagnetic spectrum. HgCdTe infrared focal plane arrays, cooled to below 30 K to minimize noise, will be used to detect the faint signals. One of the instruments on JWST is the Near Infrared Spectrometer (NIRSPEC) designed to measure the infrared spectra of up to 100 separate galaxies simultaneously. A key component in NIRSPEC is a Micro-Electromechanical System (MEMS), a two-dimensional micro-shutter array (MSA) developed by NASA/GSFC. The MSA is inserted in front of the detector to allow only the light from the galaxies of interest to reach the detector and to block the light from all other sources. The MSA will have to operate at 30 K to minimize the amount of thermal radiation emitted by the optical components from reaching the detector array. It will also have to operate in the space radiation environment that is dominated by the MSA will be exposed to a large total ionizing dose of approximately 200 krad(Si). Following exposure to ionizing radiation, a variety of MEMS have exhibited performance degradation. MEMS contain moving parts that are either controlled or sensed by changes in electric fields. Radiation degradation can be expected for those devices where there is an electric field applied across an insulating layer that is part of the sensing or controlling structure. Ionizing radiation will liberate charge (electrons and holes) in the insulating layers, some of which may be trapped within the insulating layer. Trapped charge will partially cancel the externally applied electric field and lead to changes in the operation of the MEMS. This appears to be a general principle for MEMS. Knowledge of the above principle has raised the concern at NASA that the MSA might also exhibit degraded performance because, i) each shutter flap is a multilayer structure consisting of metallic and insulating layers and ii) the movement of the shutter flaps is partially controlled by the application of an electric field between the shutter flap and the substrate (vertical support grid). The whole mission would be compromised if radiation exposure were to prevent the shutters from opening and closing properly. energetic ionizing particles. Because it is located A unique feature of the MSA is that, as outside the spacecraft and has very little shielding, previously mentioned, it will have to operate at temperatures near 30 K. To date, there are no published reports on how very low temperatures (- 30K) affect the response of MEMS devices to total ionizing dose. Experiments on SiO2 structures at low temperatures (80 K) indicate that the electrons generated by the ionizing radiation are mobile and will move rapidly under the application of an external electric field. Holes, on the other hand, that would normally move in the opposite direction through the SiO2 via a "thermal hopping" process, are effectively immobile at low electric fields as they are trapped close to their generation sites. However, for sufficiently large electric fields (greater than 3 MV/cm) holes are able to move through the SiO2. The larger the field, the more rapidly the holes move. The separation of the electrons and holes leads to a reduced electric field within the insulating layer. To overcome this reduction in electric field, a greater external voltage will have to be applied that alters the normal operation of the device. This report presents the results of radiation testing of the MSA at 60 K. The temperature was higher than the targeted temperature because of a faulty electrical interconnect on the test board. Specifically, our goal was to determine whether the MSA would function propey after a TID of 200 krad(Si).

Rapchun, David A.↗

Proton Effects and Test Issues for Satellite Designers

Microelectronic and photonic systems in the natural space environment are bombarded by a variety of charged particles including electrons, trapped protons, cosmic rays, and solar particles (protons and other heavy ions). These incident particles cause both ionizing and non-ionizing effects when traversing a device, and the effects can be either transient or permanent. The vast majority of the kinetic energy of an incident proton is lost to ionization, creating the single event effects (SEES) and total ionizing dose (TID) effects. However, the small portion of energy lost in non-ionizing processes causes atoms to be removed from their lattice sites and form permanent electrically active defects in semiconductor materials. These defects, i.e., "displacement damage," can significantly degrade device performance. In general, most of the displacement damage effects in the natural space environment can be attributed to protons since they are plentiful and extremely energetic (and therefore not readily shielded against). For this reason, we consider only proton induced displacement damage in this course. (Nevertheless, we identify solar cells as an important example of a case where both electron and proton damage can be important since only very light shielding is feasible.) The interested reader is encouraged to explore the three previous NSREC and RADECS short courses which also treat displacement damage issues for satellite applications. Part A of this segment of the short course introduces the space environment, proton shielding issues, and requirements specifications for proton-rich environments. In order to exercise the displacement damage analysis tools for on-orbit performance predictions, the requirements document must provide the relevant proton spectra in addition to the usual total ionizing dose-depth curves. Ion-solid interactions and the nature of the displacement damage they generate have been studied extensively for over half a century, yet they still remain a subject of investigation. In this section, a description of the mechanisms by which displacement damage is produced will be followed by a summary of the major consequences for device performance in a space environment. Often the degradation of a device parameter can be characterized by a damage factor (measured in a laboratory using monoenergetic protons) that is simply the change in a particular electrical or optical parameter per unit proton fluence. In addition, we will describe the concept of a non-ionizing energy loss rate (NIEL) which quantifies that portion of the energy lost by an incident ion that goes into displacements. It has been calculated as a function of proton energy, and is analogous to (and has the same units as) the linear energy transfer (LET) for ionizing energy. We will discover that, to first order, the calculated NIEL describes the energy dependence of the measured device damage factors. This observation provides the basis for predicting proton induced device degradation in a space environment based on both the calculated NIEL and relatively few laboratory test measurements. The methodology of such on-orbit device performance predictions will be described, as well as the limitations. Several classes of devices for which displacement damage is a significant (if not the dominant) mode of radiation induced degradation will be presented.

Marshall, Cheryl J.↗