Hardening of MJS77 spacecraft against the Jupiter radiation belts
Results of the device characterization program to identify components of the Mariner Jupiter/Saturn spacecraft in need of radiation hardening to meet a total dose requirement of 5 trillion e/sq cm are presented. The parts to be tested, including bipolar transistors, JFETs, SCRs, CMOS devices, linear integrated circuits, Zener diodes and other radiation-sensitive parts, were identified by a worst case circuit analysis of the 20 major subsystems. The test samples were exposed to several levels of irradiation from a Dynamitron electron accelerator capable of producing a steady stream of electrons at energies up to 2.5 eV. The electrical parameters of the devices were measured immediately following irradiation to prevent annealing. CMOS devices and linear devices showed the most severe degradation in a moderate radiation environment, and significant degradation was produced at low current in bipolar transistors. Three methods used for screening a number of devices determined by circuit and shielding analyses to be unacceptable radiation-sensitive are described: diffusion and metallization lot screening; wafer lot screening; and irradiation-anneal screening.