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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6

Precision Measurement of the Microwave Dielectric Loss of Sapphire in the Quantum Regime with Parts-per-Billion Sensitivity

Dielectric loss is known to limit state-of-the-art superconducting qubit lifetimes. Recent experiments imply upper bounds on bulk dielectric loss tangents on the order of 100 parts per billion but because these inferences are drawn from fully fabricated devices with many loss channels, these experiments do not definitely implicate or exonerate the dielectric. To resolve this ambiguity, we devise a measurement method capable of separating and resolving bulk dielectric loss with a sensitivity at the level of 5 ×10 –9 . The method, which we call the dielectric dipper, involves the in situ insertion of a dielectric sample into a high-quality microwave cavity mode. Smoothly varying the participation of the sample in the cavity mode enables a differential measurement of the dielectric loss tangent of the sample. The dielectric dipper can probe the low-power behavior of dielectrics at cryogenic temperatures and does so without the need for any lithographic process, enabling controlled comparisons of substrate materials and processing techniques. We demonstrate the method with measurements of sapphire grown by edge-defined film-fed growth (EFG) in comparison to high-grade sapphire grown by the heat-exchanger method (HEMEX). For EFG sapphire, we infer a bulk loss tangent of 63⁢(8) ×10 –9 and a substrate-air interface loss tangent of 15⁢(3) ×10 –4 (assuming a sample surface thickness of 3 nm). For a typical transmon, this bulk loss tangent would limit device quality factors to Q ≲20 ×10 6 , suggesting that bulk loss is likely the dominant loss mechanism in the longest-lived transmons on sapphire. We also demonstrate this method on HEMEX sapphire and bound its bulk loss tangent to be less than 19⁢(6) ×10 –9 . As this bound is about 3 times smaller than the bulk loss tangent of EFG sapphire, the use of HEMEX sapphire as a substrate would lift the bulk dielectric coherence limit of a typical transmon qubit to several milliseconds.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Towards performing high-resolution inelastic X-ray scattering measurements at hard X-ray free-electron lasers coupled with energetic laser drivers

High-resolution inelastic X-ray scattering is an established technique in the synchrotron community, used to investigate collective low-frequency responses of materials. When fielded at hard X-ray free-electron lasers (XFELs) and combined with high-intensity laser drivers, it becomes a promising technique for investigating matter at high temperatures and high pressures. This technique gives access to important thermodynamic properties of matter at extreme conditions, such as temperature, material sound speed, and viscosity. The successful realization of this method requires the acquisition of many identical laser-pump/X-ray-probe shots, allowing the collection of a sufficient number of photons necessary to perform quantitative analyses. Here, a 2.5-fold improvement in the energy resolution of the instrument relative to previous works at the Matter in Extreme Conditions (MEC) endstation, Linac Coherent Light Source (LCLS), and the High Energy Density (HED) instrument, European XFEL, is presented. Some aspects of the experimental design that are essential for improving the number of photons detected in each X-ray shot, making such measurements feasible, are discussed. A careful choice of the energy resolution, the X-ray beam mode provided by the XFEL, and the position of the analysers used in such experiments can provide a more than ten-fold improvement in the photometrics. The discussion is supported by experimental data on 10 µm-thick iron and 50 nm-thick gold samples collected at the MEC endstation at the LCLS, and by complementary ray-tracing simulations coupled with thermal diffuse scattering calculations.

36 MATERIALS SCIENCE↗

Molybdenum and silver photoemission survey spectra from hard x-rays

Electron emission from thick polished samples of polycrystalline molybdenum (Mo) and single crystalline $\langle$111$\rangle$ silver (Ag) was measured with hard x-ray photoemission spectroscopy. Six different excitation x-ray energies were used, nominally 8.0, 11.0, 13.0, 15.0, 18.0, and 21.5 keV. Survey spectra were recorded with each excitation to a kinetic energy of at most 15 keV, often capturing the entire emission range. The Mo 1s core peak was measured. Detailed LMM Auger spectra of Mo show marked increases in intensity and altered shape when x-ray energy exceeds the Mo 1s binding energy. The Mo and Ag L-shell photoelectron peaks are measured at four x-ray energies up to 18 keV showing the transition from 2p3/2 to 2s photoionization dominance.

47 OTHER INSTRUMENTATION↗

An attribution of the low single-scattering albedo of biomass burning aerosol over the southeastern Atlantic

Abstract. Aerosol over the remote southeastern Atlantic is some of the most sunlight-absorbing aerosol on the planet: the in situ free-tropospheric single-scattering albedo at the 530 nm wavelength (SSA530 nm) ranges from 0.83 to 0.89 within ORACLES (ObseRvations of Aerosols above CLouds and their intEractionS) aircraft flights from late August–September. Here we seek to explain the low SSA. The SSA depends strongly on the black carbon (BC) number fraction, which ranges from 0.15 to 0.4. Low organic aerosol (OA)-to-BC mass ratios of 8–14 and modified combustion efficiency values >0.975 point indirectly to the dry, flame-efficient combustion of primarily grass fuels, with back trajectories ending in the miombo woodlands of Angola. The youngest aerosol, aged 4–5 d since emission, occupied the top half of a 5 km thick plume sampled directly west of Angola with a vertically consistent BC:ΔCO (carbon monoxide) ratio, indicating a homogenization of the source emissions. The younger aerosol, transported more quickly off of the continent by stronger winds, overlaid older, slower-moving aerosol with a larger mean particle size and fraction of BC-containing particles. This is consistent with ongoing gas condensation and the coagulation of smaller non-BC particles upon the BC-containing particles. The particle volumes and OA:BC mass ratios of the older aerosol were smaller, attributed primarily to evaporation following fragmentation, instead of dilution or thermodynamics. The CLARIFY (CLoud–Aerosol–Radiation Interaction and Forcing: Year 2017) aircraft campaign sampled aerosols that had traveled further to reach the more remote Ascension Island. CLARIFY reported higher BC number fractions, lower OA:BC mass ratios, and lower SSA yet larger mass absorption coefficients compared to this study's. Values from one ORACLES 2017 flight, held midway to Ascension Island, are intermediate, confirming the long-range changes. Overall the data are most consistent with continuing oxidation through fragmentation releasing aerosols that subsequently enter the gas phase, reducing the OA mass, rather than evaporation through dilution or thermodynamics. The data support the following best fit: SSA530nm=0.801+0055⋅(OA:BC) (r=0.84). The fires of southern Africa emit approximately one-third of the world's carbon; the emitted aerosols are distinct from other regional smoke emissions, and their composition needs to be represented appropriately to realistically depict regional aerosol radiative effects.

54 ENVIRONMENTAL SCIENCES↗

Search for High-Pressure Silicon Phases: Reaching the Extreme Conditions with High-Intensity Laser Irradiation

Controlling electronic and optical properties of semiconducting materials could substantially expand their functionality and enable new pathways for the formation of ‘smart’ materials for emerging innovative applications. An emerging new path for the synthesis of exotic silicon (Si) polymorphs is irradiation of bulk diamond-cubic Si by ultrashort laser pulses at relativistic intensity above 1019 W/cm2. Exotic polymorphs are formed due to interaction with MeV-energy electrons generated in laser-produced high-temperature plasma state. The unusual Si structures are found in the form of 5–10 nm nanoparticles confined deep in the bulk of 500-μm-thick Si samples. Raman spectroscopy, electron microscopy and X-ray diffraction studies provide an unequivocal evidence of exotic Si phase formation. A key advantage of such relativistic irradiation lies thereby in the fact that large quantities of such exotic Si is synthesised embedded within the bulk diamond-cubic Si and that further the formed Si polymorphs are stable at ambient temperature and pressure. They are thus available for further studies for electronic applications in selective band gap engineering.

Rapp, Ludovic↗

Axion insulator state in hundred-nanometer-thick magnetic topological insulator sandwich heterostructures

Abstract An axion insulator is a three-dimensional (3D) topological insulator (TI), in which the bulk maintains the time-reversal symmetry or inversion symmetry but the surface states are gapped by surface magnetization. The axion insulator state has been observed in molecular beam epitaxy (MBE)-grown magnetically doped TI sandwiches and exfoliated intrinsic magnetic TI MnBi 2 Te 4 flakes with an even number layer. All these samples have a thickness of ~ 10 nm, near the 2D-to-3D boundary. The coupling between the top and bottom surface states in thin samples may hinder the observation of quantized topological magnetoelectric response. Here, we employ MBE to synthesize magnetic TI sandwich heterostructures and find that the axion insulator state persists in a 3D sample with a thickness of ~ 106 nm. Our transport results show that the axion insulator state starts to emerge when the thickness of the middle undoped TI layer is greater than ~ 3 nm. The 3D hundred-nanometer-thick axion insulator provides a promising platform for the exploration of the topological magnetoelectric effect and other emergent magnetic topological states, such as the high-order TI phase.

36 MATERIALS SCIENCE↗

Porous reaction-bonded silicon nitride: Size effects for pressureless nitriding of binder jet additively manufactured silicon

The direct nitridation of binder jet additively manufactured silicon to produce porous reaction-bonded silicon nitride was explored to determine the maximum thickness of the sample that could be converted to >99% silicon nitride. The maximum thickness that could be nitrided was investigated by nitriding cubes of increasing physical size on the millimeter scale. Highly porous samples with high conversion ( > 99%) to silicon nitride were achieved in cubes with 35 mm edge length. It was shown that the silicon nitride phase content changes with increasing sample size.

Aguirre, Trevor [ORNL] (ORCID:0000000281469630)↗

Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001)

Germanium–tin (GeSn) alloys are emerging as promising materials for mid-infrared optoelectronics and silicon-compatible photonic devices, owing to their tunable direct bandgap. However, the growth of high-quality GeSn films with high Sn content remains challenging due to strain-induced defect formation. In this study, we investigate the role of film thickness on strain-induced relaxation, defect density, and Sn segregation. A series of five samples with varying thicknesses and ∼15% Sn-containing GeSn layers were grown, ranging from the critical thickness for strain relaxation to the onset of Sn segregation. All GeSn samples were analyzed using X-ray diffraction reciprocal space mapping (XRD-RSM) to explore the evolution of strain-induced relaxation as a function of thickness. Photoluminescence measurements reveal that increasing the GeSn thickness enhances strain relaxation while reducing defect-related emission, indicating a decrease in effective defect density prior to reaching the threshold thickness of GeSn layer. At a thickness of ∼150 nm, the GeSn layer shows the onset of Sn segregation, evident in the XRD-RSM spectrum, marking the threshold thickness for Sn segregation. This work defines an effective growth window in terms of thickness (35 to 150 nm) for fabricating relaxed, defect-suppressed GeSn layers with 15% Sn content. These findings emphasize the crucial role of thickness control in balancing strain relaxation and defect suppression, advancing the fabrication of high-quality, high Sn-content relaxed GeSn using molecular beam epitaxy.

Defects↗

Cross-section SEM-EDS Analysis of Corroded 316 Steel Samples Using JEOL 6610 SEM

Comparison of SEM images obtained for samples 316H-1, 5, 7, and 10 revealed that samples 1 and 5 were subjected to more corrosion than the other two samples. Pores of an average of 1µm size were also observed scattered near the edge of each sample. Corrosion layer thickness was measured from edge of the corroded surface to the pore region. It was found that 316H-1 and 316H-5 had more corrosion damage with 82.40µm and 100µm respectively. Sample 316H-5 posed a challenge in measuring the corrosion layer thickness due to it breaking off from the parent sample during polishing. Samples 316H-7 and 316H-10 are less corroded with 26.57µm and 39.94µm thickness respectively.

36 - MATERIALS SCIENCE↗

Laminography as a tool for imaging large-size samples with high resolution

Despite the increased brilliance of the new generation synchrotron sources, there is still a challenge with high-resolution scanning of very thick and absorbing samples, such as a whole mouse brain stained with heavy elements, and, extending further, brains of primates. Samples are typically cut into smaller parts, to ensure a sufficient X-ray transmission, and scanned separately. Compared with the standard tomography setup where the sample would be cut into many pillars, the laminographic geometry operates with slab-shaped sections significantly reducing the number of sample parts to be prepared, the cutting damage and data stitching problems. In this work, a laminography pipeline for imaging large samples (>1 cm) at micrometre resolution is presented. The implementation includes a low-cost instrument setup installed at the 2-BM micro-CT beamline of the Advanced Photon Source. Additionally, sample mounting, scanning techniques, data stitching procedures, a fast reconstruction algorithm with low computational complexity, and accelerated reconstruction on multi-GPU systems for processing large-scale datasets are presented. The applicability of the whole laminography pipeline was demonstrated by imaging four sequential slabs throughout an entire mouse brain sample stained with osmium, in total generating approximately 12 TB of raw data for reconstruction.

47 OTHER INSTRUMENTATION↗

ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics

Abstract The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fundamental properties and fashioning proof-of-concept devices. Here, we use molecular beam epitaxy to synthesize a vdW heterostructure that interfaces two material systems of contemporary interest: a 2D ferromagnet (1T-CrTe 2 ) and a topological semimetal (ZrTe 2 ). We find that one unit-cell (u.c.) thick 1T-CrTe 2 grown epitaxially on ZrTe 2 is a 2D ferromagnet with a clear anomalous Hall effect. In thicker samples (12 u.c. thick CrTe 2 ), the anomalous Hall effect has characteristics that may arise from real-space Berry curvature. Finally, in ultrathin CrTe 2 (3 u.c. thickness), we demonstrate current-driven magnetization switching in a full vdW topological semimetal/2D ferromagnet heterostructure device.

36 MATERIALS SCIENCE↗

Growth of Native Oxides of Niobium Thin Films for Superconducting Qubits with Etching Chemistry

Niobium thin films have been broadly applied in building superconducting qubits for quantum computing hardware. While improvements have been made by device engineering efforts, scaling the energy-sensitive quantum system requires materials study for further improvements. In this study, we performed XPS and ToF-SIMS analysis for Nb thin films across samples with different manufacturing techniques. By varying the air exposure time of the samples, this research comparatively investigates the chemical and depth profile of native oxides before and after the etching process. We observe a rapid logarithmic growth of oxide thickness across all samples and the dominant presence and growth of Niobium pentoxide in atomic percentage concentration on the surface. This comparative study provides insight into oxides mitigation strategies and correlation with qubits performance.

Lei, Zhicheng↗

Effect of processing parameters and strut dimensions on the microstructures and hardness of stainless steel 316L lattice-emulating structures made by powder bed fusion

In this study, we present the effects of input processing parameters and strut thickness (in square struts) on microstructure and properties in laser powder bed fusion additively manufactured stainless steel 316L lattice-emulating structures. Lattice-emulating X-structures with square cross-sections of 1.5, 1.0, and 0.5 mm were fabricated using three different parameter sets with varying power, speed, and therefore, linear energy density. Grain size and morphology were shown to be dictated by epitaxial growth, which was dependent on weld pool morphology. Additionally, grain size and morphology were shown to change across the thickness direction of the struts (from the bottom inclined surface to the top inclined surface). The spatial variation in grain size was reflected by changes in hardness through the thickness of each strut. The 0.5 mm struts exhibited more significant grain elongation in the strut direction and larger sub-grain solidification cell diameters than their thicker counterparts. The larger sub-grain solidification cell diameters in the 0.5 mm samples resulted in correspondingly lower hardness values when compared to samples of higher thicknesses.

36 MATERIALS SCIENCE↗

Characterizing The Mechanical Properties of Polyurethane Foams

The Department of Energy has many radioactive facilities that are on the path of deactivation and decommissioning (D and D). These facilities can sit cold and dark for many years before final disposition, and must be maintained to ensure no radiological release occurs in the interim. Improvements and additions to D and D tool sets can greatly: Save time and money, Reduce worker risk. Conventional fixatives widely used often take the form of paints or films that are not readily applicable to 3-dimensional void spaces. Foams are one promising platform that may offer solutions to a number of contaminated problem sets such as: Gloveboxes, Pipes, Tanks. SRNL is working to characterize various commercial foams that would encapsulate the interior volume of a given space and are capable of immobilizing any remaining contamination. One key performance metric of these foams is how well they will perform in an accident scenario. To this end, SRNL is researching the mechanical properties of these foams to ensure that the material can withstand the environment of application while maintaining structural integrity. ASTM standard E3191-18 served as a guiding document for this project, outlining the requirements that foaming fixatives used for the mitigation of radioactive contamination need to meet before being implemented. Objective: Quantification of the mechanical properties of 6 commercial polyurethane foams was performed using multiple ASTM standards to record measurements for: Compression testing: Flexible Foams, Force required to produce 50% compression, Rigid Foams, Compressive and apparent modulus, Point of 10% core deformation, The 'Zero Deformation' point, Compressive strength, Yield point. Tensile testing: Tensile strength, Tensile stress, Percent elongation. Experiment 1: An electromechanical compressive tester (MTS Criterion Series 43) was used to evaluate 6 foams (4 flexible, 2 rigid). Per ASTM D1621, each rigid foam was compressed at 10% of the measured thickness per minute until the sample was 13% of it's original thickness. Per ASTM D35/4, each flexible foam was pre-flexed twice to 80% original thickness at a rate of 250 mm/min, then compressed to 80% original thickness at a rate of 50 mm/min. Experiment 2: An electromechanical tensile tester (MTS Criterion Series 43) was used to evaluate 6 foams (4 flexible, 2 rigid). Per ASTM D1623, rigid foams were pulled apart at a rate of 1.27 mm/min until the sample broke. Per ASTM D35/4, flexible foams were pulled apart at a rate of 500 mm/min until the sample broke. The strongest material in both compression and tensile testing scenarios was found to be the rigid intumescent polyurethane Hilti foam. The experiments revealed that the Hilti foam in a tensile scenario had a peak stress value that was larger than the closest competitor by a factor of 2.3 and a compressive yield point that was larger than the closest competitor by a factor of 1.4, indicating that the Hilti foam is the best choice for implementation in mechanically harsh environments. The performance metrics measured can serve as a basis for future mechanical tests that would help set relevant ASTM standards (E3191) for intumescent polyurethane foams in fixating applications. Tests like surface adhesion, impact, and flame tests would serve as a better indicator as to how this material would perform in environmentally harsh scenarios often found in decommissioned nuclear facilities. Further tests of the foams' intumescent properties would also be important should these foams be implemented in environmentally harsh scenarios.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

Empirical Characterization and Modeling of Cohesive – to – Adhesive Shear Fracture Mode Transition due to Increased Adhesive Layer Thicknesses of Fiber Reinforced Composite Single – Lap Joints

Here, to ensure a strong adhesive bond, most standards and adhesive manufacturers specify a maximum adhesive gap of 1 mm when bonding fiber reinforced composite structures. In manufacturing large components, such as joining two halves of wind turbine blades, meeting this gap tolerance specification is impractical; gaps larger than 10 mm are common in large adhesively bonded composite structures using state-of-the-art manufacturing techniques. Currently, there is a lack of fundamental understanding of the failure mechanics of adhesive gaps larger than 3 mm. To create such understanding, glass fiber - acrylic thermoplastic composite panels bonded using different epoxy adhesives within single-lap joint samples with adhesive thicknesses of 0.1 mm, 0.3 mm, 1 mm, 3 mm, 5 mm, and 10 mm were sheared to failure. A transition from cohesive to adhesive failure was observed to occur about 1 mm to 3 mm joint thicknesses. Plotting the shear stress normalized by the ratio of the joint width to thickness as a function of the joint thickness normalized by the joint length is shown to result in the ability to fit simple empirically derived models of the cohesive-to-adhesive failure transition, regardless of the adhesive. Furthermore, using these normalized variables, all the observed cohesively failed specimens collapse to a single master curve, as do the adhesively failed specimens.

36 MATERIALS SCIENCE↗

Observation of high-pressure polymorphs in bulk silicon formed at relativistic laser intensities

Silicon polymorphs with exotic electronic and optical properties have recently attracted significant attention due to their wide range of useful band gap characteristics. They are typically formed by static high-pressure techniques, which limits the crystal structures that can be made. This constitutes a major obstacle to study these polymorphs and their incorporation into existing technology. Approaches have attempted to address this shortcoming through using dynamic conditions and chemical precursor materials. Here, we report on an approach to create unusual crystal structures deep in the bulk of a silicon crystal by irradiating it with a laser pulse at ultrarelativistic intensity of up to 7.5 × 10 19 W/ c m 2 . Laser-generated electrons with MeV energy swiftly penetrate the target with speed close to the speed of light and deposit their energy into a large volume across the whole thickness of the sample. The relativistic electron current creates, via branching propagation and ionization, high-energy-density conditions for thermodynamically nonequilibrium phase transformation paths into new crystal polymorphs. X-ray microdiffraction and synchrotron x-ray diffraction analyses indicate, along with conventional dc-Si, the presence of exotic silicon structures in the bulk of the laser intact target volume. These structures are identified as body-centered bc8-Si, rhombohedral r8-Si, hexagonal-diamond hd-Si, and the tetragonal Si-VIII, all phases of Si that have previously been made through static techniques. Additionally, simple-tetragonal st12-Si and body-centered tetragonal bt8-Si were observed along with signatures of not yet identified diffraction spots. Both st12-Si and bt8-Si have only been observed in ultrafast laser microexplosion conditions at much lower laser intensity ∼ 10 14 W/ c m 2 and within a micron-thin surface layer. The findings here are supported by direct observation of nanoparticles with high-resolution transmission electron microscopy and corresponding fast Fourier transform analysis of their interatomic distances. The presented analyses of absorbed laser energy, generation of the MeV electron current, and deposition of energy across the whole target thickness provide a solid basis for drawing the conclusion that the observed silicon polymorphs were produced because of laser-generated high-energy electrons fast-penetrating deeply into the bulk of silicon. In contrast to solid-solid transformations, the plasma-solid transitions offer a paradigm for the creation of exotic, high-energy density materials inside the bulk of the sample by using laser pulses at relativistic intensities. Published by the American Physical Society 2024

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Splat Quenching as a High Throughput Rapid Solidification Testing Method for Developing Additive Manufacturing Alloys

Splat quenching as a high throughput rapid solidification screening tool is evaluated. Samples were made using known alloys (SS316, IN625, Ti-5553) to evaluate and establish the microstructures for a variety of alloy systems as well as the predicted cooling rates. The samples are inductively heated and levitated prior to being struck between two platens that produce a high contact pressure and a thin sample resulting in cooling rates on the order of 10 6 to 10 7 K/s. Process parameters were evaluated with analytical models in addition to numerical simulations to provide an effect of process variables such as substrate material, melt superheat, and platen velocity on the resulting solidification. The splat thickness was found to be controlled by platen velocity, melt superheat, as well as the feedstock volume. The sample thickness is the key controlling factor for varying the average cooling rate experienced by the splat quenched sample. The splat quenching techniques can reach regions of rapid solidification space that meet and exceed laser and electron beam techniques across the sample. In conclusion, the results of the study provide a useful foundation in understanding the splat quenching technique and its potential as a low effort tool to explore rapid solidification effects on alloys.

Alloy Design↗