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At least 109 records · Page 6

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NASA NTRS1988

Demonstration of frequency control and CW diode laser injection control of a titanium-doped sapphire ring laser with no internal optical elements

Theoretical and experimental frequency narrowing studies of a Ti:sapphire ring laser with no intracavity optical elements are reported. Frequency narrowing has been achieved using a birefringent filter between a partially reflecting reverse wave suppressor mirror and the ring cavity output mirror. Results of CW diode laser injection seeding are reported.

Bair, Clayton H.↗

NASA NTRS1988

Containerless laser-induced flourescence study of vaporization and optical properties for sapphire and alumina

Evaporation of aluminum oxide was studied from 1800 to 2327 K by laser-induced flourescence (LIF) detection of Al atom vapor over sapphire and alumina spheres that were levitated in an argon gas jet and heated with a continuous wave CO2 laser. Optical properties were determined from apparent specimen temperatures measured with an optical pyrometer and true temperatures deduced from the LIF intensity versus temperature measurements using the known temperature dependence of the Al atom vapor concentration in equilibrium with Al2O3. The effects of impurities and dissolved oxygen on the high-temperature optical properties of aluminum oxide were discussed.

Nordine, Paul C.↗

NASA NTRS1988

Effects of tensile stress on the R lines of Cr(3+) in a sapphire fiber

The spectroscopic properties of a crystalline sapphire fiber unintentionally dOed with Cr(3+) are investigated. It is found that tensile stress produces blue shifts of the R lines and changes in their radiative lifetimes and integrated intensities that can be correlated to stress-induced changes of the crystal-field parameters.

Liu, Huimin↗

NASA NTRS1988

Time dependent temperature distribution in pulsed Ti:sapphire lasers

An expression is derived for the time dependent temperature distribution in a finite solid state laser rod for an end-pumped beam of arbitrary shape. The specific case of end pumping by circular (constant) or Gaussian beam is described. The temperature profile for a single pump pulse and for repetitive pulse operation is discussed. The particular case of the temperature distribution in a pulsed titanium:sapphire rod is considered.

Buoncristiani, A. Martin↗

NASA NTRS1991

Sapphire Ring Resonator For Microwave Oscillator

Sapphire dielectric ring resonator operating in "whispering-gallery" mode helps to stabilize frequency and phase of microwave oscillator. Reduces phase noise appreciably at room temperature and promises unprecedented stability of phase at cryogenic temperatures.

Dick, G. John↗

NASA NTRS1991

Epitaxial yttria-stabilized zirconia on (1 -1 0 2) sapphire for YBa2Cu3O(7-delta) thin films

Epitaxial yttria-stabilized zirconia (YSZ) films were deposited on (1 -1 0 2) sapphire by pulsed laser deposition. The films are formed in a cubic phase with the a axis normal to the substrate surface. Ion beam channeling measurements show that the YSZ films are highly crystalline with a channeling minimum yield of 8 percent. The epitaxial relationship between the film and substrate is further confirmed by a cross-section TEM study. Epitaxial YBa2Cu3O(7-delta) thin films deposited on YSZ/sapphire have Tc and Jc of up to 89 K and 10 to the 6th A/sq cm at 77 K, respectively.

Wu, X. D.↗

NASA NTRS1990

Recent developments in Ti:sapphire for remote sensing application

The development by NASA of Ti:Al2O3 (Ti:sapphire) lasers in the DIAL mode for spaceborne remote sensing applications is discussed. Experimental results are reviewed which show how the capability of such lasers to meet many of the space transmitter requirements, and diagrams and experimental measurement results are shown. Related Ti:Al2O3 development efforts are briefly addressed.

Barnes, James C.↗

NASA NTRS1992

Microwave properties of peeled HEMT devices sapphire substrates

The focus of this research is to demonstrate the first full radio frequency characterization of high electron mobility transistor (HEMT) device parameters. The results of this research are used in the design of circuits with peeled HEMT devices, e.g. 10 GHz amplifiers. Devices were fabricated using two HEMT structures grown by molecular beam epitaxy methods. A 500 A AlAs release layer for 'peel off' was included under the active layers of the structure. The structures are a homogeneously doped Al(0.3)GA(0.7)As/GaAs and a delta doped square well Al(.23)Ga(.77)As/GaAs HEMT structure. Devices were fabricated using a mesa isolation process. Contacts were done by sequentially evaporating Au/Ge/Au/Ni/Au followed by rapid thermal anneal at 400 C for 15 seconds. Gates were wet etch recessed and 1 to 1.4 micron Ti/Au gate metal was deposited. Devices were peeled off the GaAs substrate using Apiezon wax to support the active layer and a HF:DI (1:10) solution to remove the AlAs separation layer. Devices were then attached to sapphire substrates using van der Waals bonding.

Young, Paul G.↗

NASA NTRS1990

Interfacial shear behavior of sapphire-reinforced NiAl composites

The interfacial shear behavior in near-equiatomic NiAl reinforced by sapphire filaments has been examined at room temperature using a fiber pushout test technique. The load-displacement data indicate a large variability in the initial interface failure stress, although reverse push behavior indicates a comparatively constant interfacial sliding friction stress. The observed behavior suggests that the presence of asperities on the fiber surfaces and nonuniformities in fiber diameter require constrained plastic flow within the NiAl matrix in order for interfacial shear to occur. The location, shape, severity, and distribution of fiber asperities as well as the uniformity of fiber diameter are critical to the interfacial shear process.

Moose, C. A.↗

NASA NTRS1992

Electroform replication of smooth mirrors from sapphire masters

A sapphire master was used to produce mirrors that exhibit mid-to-high-frequency roughness as low as 3 A. The fabrication procedure and potential applications in X-ray astronomy are discussed. It is shown that foils replicated from flat smooth mandrels should offer at least equivalent HF roughness and significantly lower mid-frequency ripple than those coated with lacquer. A ceramic-surface mandrel could also be expected to last far longer without the need for repolishing than electroless nickel-coated mandrels.

Altkorn, R.↗

NASA NTRS1993

Demonstration of Y1Ba2Cu3O(7-delta) and complementary metal-oxide-semiconductor device fabrication on the same sapphire substrate

We report the first fabrication of active semiconductor and high-temperature superconducting devices on the same substrate. Test structures of complementary MOS transistors were fabricated on the same sapphire substrate as test structures of Y1Ba2Cu3O(7-delta) flux-flow transistors, and separately, Y1Ba2Cu3O(7-delta) superconducting quantum interference devices utilizing both biepitaxial and step-edge Josephson junctions. Both semiconductor and superconductor devices were operated at 77 K. The cofabrication of devices using these disparate yet complementary electronic technologies on the same substrate opens the door for the fabrication of true semiconductive/superconductive hybrid integrated circuits capable of exploiting the best features of each of these technologies.

Burns, M. J.↗

NASA NTRS1994

A Completely Solid-State Tunable Ti:Sapphire Laser System

Compact, completely solid-state tunable pulsed laser system passively cooled developed for potential employment in aircraft and sounding-rocket lidar experiments. Ti:sapphire based laser system pumped with frequency-doubled diode-pumped Nd:YAG. Rugged, self-contained system extremely flexible and provides pulsed output at specific frequencies with low input-power requirements. In-situ measurements enables scientists to study upper-atmosphere dynamics. Tuning range easily extended to bands between 650-950 nm in order to study other atmospheric constituents.

Guerra, David V.↗

NASA NTRS1992

Fully-depleted silicon-on-sapphire and its application to advanced VLSI design

In addition to the widely recognized advantages of full dielectric isolation, e.g., reduced parasitic capacitance, transient radiation hardness, and processing simplicity, fully-depleted silicon-on-sapphire offers reduced floating body effects and improved thermal characteristics when compared to other silicon-on-insulator technologies. The properties of this technology and its potential impact on advanced VLSI circuitry will be discussed.

Offord, Bruce W.↗

NASA NTRS1996

Temperature-Compensated Sapphire Microwave Resonator

Sapphire-dielectric-ring microwave resonator operating in "whispering-gallery" electromagnetic mode features differential-thermal-expansion design providing temperature compensation for ultrahigh frequency stability. Designed to minimize frequency fluctuations caused by temperature fluctuations at normal temperature equal to or even somewhat greater than temperature of liquid nitrogen. Ancillary equipment needed for operation smaller and less expensive, and liquid nitrogen used as coolant.

Dick, G. John↗

NASA NTRS1994

Sapphire reinforced alumina matrix composites

Unidirectionally reinforced A1203 matrix composites have been fabricated by hot pressing. Approximately 30 volume % of either coated or uncoated sapphire fiber was used as reinforcement. Unstabilized ZrO2 was applied as the fiber coating. Composite mechanical behavior was analyzed both after fabrication and after additional heat treatment. The results of composite tensile tests were correlated with fiber-matrix interfacial shear strengths determined from fiber push-out tests. Substantially higher strength and greater fiber pull-out were observed for the coated fiber composites for all processing conditions studied. The coated fiber composites retained up to 95% and 87% of their as-fabricated strength when heat treated at 14000C for 8 or 24 hours, respectively. Electron microscopy analysis of the fracture surfaces revealed extensive fiber pull-out both before and after heat treatment.

Jaskowiak, Martha H.↗

NASA NTRS1997

Cryo-Cooled Sapphire Oscillator for the Cassini Ka-Band Experiment

We present features for an ultra-stable sapphire cryogenic oscillator which has been designed to support the Cassini Ka-band Radio Science experiment. The design of this standard is new in several respects. It is cooled by a commercial cryocooler instead of liquid cryogens to increase operating time, and it uses a technology to adjust the temperature turn-over point to extend the upper operating temperature limit and to enable construction of multiple units with uniform operating characteristics. Objectives are 3 x 10(exp -15) stability for measuring times 1 second less than or equal to (tau) less than or equal to 100 seconds, phase noise of -85 dBc/Hz from offset frequencies of 1 Hz to 1000 Hz at 10 GHz carrier frequency, and a one year continuous operating period.

Wang, Rabi T.↗

NASA NTRS1997

Mechanical Behavior of Sapphire Reinforced Alumina Matrix Composites at Elevated Temperatures

Zirconia coated sapphire reinforced alumina matrix composites have been tested both after heat treatment to 1400 C and at temperatures ranging from 800 C to 1200 C in. air. Interfacial shear stress has also been measured with fiber pushout tests performed in air at room temperature, 800 C and 1OOO C. Matrix crack spacing was measured for the tensile tested composites and used to estimate interfacial shear stress up to 1200 C. Electron microscopy was used to determine the source of fiber fracture and to study interfacial failure within the composite.

Jaskowiak, Martha H.↗

NASA NTRS2003

High Mobility SiGe/Si Transistor Structures on Sapphire Substrates Using Ion Implantation

High mobility n-type SiGe/Si transistor structures have been fabricated on sapphire substrates by ion implanting phosphorus ions into strained 100 Angstrom thick silicon channels for the first time. The strained Si channels were sandwiched between Si(sub 0.7)Ge(sub 0.3) layers, which, in turn, were deposited on Si(sub 0.7)Ge(sub 0.3) virtual substrates and graded SiGe buffer layers. After the molecular beam epitaxy (MBE) film growth process was completed, ion thick silicon channels implantation and post-annealing were used to introduce donors. The phosphorous ions were preferentially located in the Si channel at a peak concentration of approximately 1x10(exp 18)/cu cm. Room temperature electron mobilities exceeding 750 sq cm/V-sec at carrier densities of 1x10(exp 12)/sq cm were measured. Electron concentration appears to be the key factor that determines mobility, with the highest mobility observed for electron densities in the 1 - 2x10(exp 12)/sq cm range.

Alterovitz, S. A.↗