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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS2012

The Effects of Thermal Cycling on Gallium Nitride and Silicon Carbide Semiconductor Devices for Aerospace Use

Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These Include radiation, extreme temperatures, thermal cycling, to name a few. Preliminary data obtained on new Gallium Nitride and Silicon Carbide power devices under exposure to radiation followed by long term thermal cycling are presented. This work was done in collaboration with GSFC and JPL in support of the NASA Electronic Parts and Packaging (NEPP) Program

Patterson, Richard L.↗
NASA NTRS1980

Empirical study of the interaction of silicon substrate thinness, device design, and solar cell processing

Processing experiments using wire-saw techniques to slice thin silicon wafers are described. Substrates were sliced directly to 17 mil, 8 mil, and 5 mil thicknesses. Some of the 8 mil substrates and all of the 5 mil substrates were chemically etched to 7 and 4 mils, respectively, to guarantee removal of any saw damage. The wafers wire sawed to 17 mil thicknesses were processed as reference cells. A baseline process which results in an n(+)-p cell structure, and two advanced processes which provide n(+)-p-p(+) structures were utilized. By using a p(+) enhancement layer on the solar cell back surface, the performance of the 7 mil wafers was increased to exceed that of the 17 mil solar cells with simple n(+)-p structures. Cells fabricated by an ion implantation sequence utilizing elemental boron and phosphorus implants were shown to be capable of equalling or exceeding the performance of cells fabricated by an equivalent all-diffusion process.

Pryor, R. A.↗
NASA NTRS1981

Semiconductor technology program: Progress briefs

Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon.

Galloway, K. F.↗
NASA NTRS1986

Area Reports. Advanced materials and devices research area. Silicon materials research task, and advanced silicon sheet task

The objectives of the Silicon Materials Task and the Advanced Silicon Sheet Task are to identify the critical technical barriers to low-cost silicon purification and sheet growth that must be overcome to produce a PV cell substrate material at a price consistent with Flat-plate Solar Array (FSA) Project objectives and to overcome these barriers by performing and supporting appropriate R&D. Progress reports are given on silicon refinement using silane, a chemical vapor transport process for purifying metallurgical grade silicon, silicon particle growth research, and modeling of silane pyrolysis in fluidized-bed reactors.

Source record↗
NASA NTRS1988

Microwave and millimeter-wave power generation in silicon carbide avalanche devices

Numerical simulations were performed to investigate the typical power-generating capabilities of SiC IMPATT diodes. Using available material parameters, SiC double-drift IMPATT diodes were simulated at 10, 35, 60, and 94 GHz, and the operating characteristics of these devices were compared to those of Si and GaAs devices. Compared to the Si and GaAs IMPATT performances in the pulsed mode, the SiC IMPATT performance was found to be far superior. The performance of SiC devices in the CW mode was also superior to that of GaAs devices, especially at lower frequencies. At a high frequency (94 GHz), the performance of the SiC device was found to be comparable to that of Si devices.

Mehdi, I.↗
NASA NTRS1990

Silicon carbide semiconductor device fabrication and characterization

A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated.

Davis, R. F.↗
NASA NTRS1995

InGaAlAsPN: A Materials System for Silicon Based Optoelectronics and Heterostructure Device Technologies

A new material system is proposed for silicon based opto-electronic and heterostructure devices; the silicon lattice matched compositions of the (In,Ga,Al)-(As,P)N 3-5 compounds. In this nitride alloy material system, the bandgap is expected to be direct at the silicon lattice matched compositions with a bandgap range most likely to be in the infrared to visible. At lattice constants ranging between those of silicon carbide and silicon, a wider bandgap range is expected to be available and the high quality material obtained through lattice matching could enable applications such as monolithic color displays, high efficiency multi-junction solar cells, opto-electronic integrated circuits for fiber communications, and the transfer of existing 3-5 technology to silicon.

Broekaert, T. P. E.↗
NASA NTRS2001

Thermally Stable Ohmic Contacts on Silicon Carbide Developed for High- Temperature Sensors and Electronics

The NASA aerospace program, in particular, requires breakthrough instrumentation inside the combustion chambers of engines for the purpose of, among other things, improving computational fluid dynamics code validation and active engine behavioral control (combustion, flow, stall, and noise). This environment can be as high as 600 degrees Celsius, which is beyond the capability of silicon and gallium arsenide devices. Silicon-carbide- (SiC-) based devices appear to be the most technologically mature among wide-bandgap semiconductors with the proven capability to function at temperatures above 500 degrees Celsius. However, the contact metalization of SiC degrades severely beyond this temperature because of factors such as the interdiffusion between layers, oxidation of the contact, and compositional and microstructural changes at the metal/semiconductor interface. These mechanisms have been proven to be device killers. Very costly and weight-adding packaging schemes that include vacuum sealing are sometimes adopted as a solution.

Okojie, Robert S.↗
NASA NTRS1981

Scriber for silicon wafers

A device for dividing silicon wafers into rectangular chips is characterized by a base including a horizontally oriented bed with a planar support surface, a vacuum chuck adapted to capture a silicon wafer seated on the support for translation in mutually perpendicular directions. A stylus support mounted on the bed includes a shaft disposed above and extended across the bed and a truck mounted on the shaft and supported thereby for linear translation along a path extended across the bed a vertically oriented scribe has a diamond tip supported by the truck also adapted as to engage a silicon wafer captured by the chuck and positioned beneath it in order to form score lines in the surface of the wafer as linear translation is imparted to the truck. A chuck positioning means is mounted on the base and is connected to the chuck for positioning the chuck relative to the stylus.

Yamakawa, K. A.↗
NASA NTRS2012

Quality Control Method for a Micro-Nano-Channel Microfabricated Device

A variety of silicon-fabricated devices is used in medical applications such as drug and cell delivery, and DNA and protein separation and analysis. When a fluidic device inlet is connected to a compressed gas reservoir, and the outlet is at a lower pressure, a gas flow occurs through the membrane toward the outside. The method relies on the measurement of the gas pressure over the elapsed time inside the upstream and downstream environments. By knowing the volume of the upstream reservoir, the gas flow rate through the membrane over the pressure drop can be calculated. This quality control method consists of measuring the gas flow through a device and comparing the results with a standard curve, which can be obtained by testing standard devices. Standard devices can be selected through a variety of techniques, both destructive and nondestructive, such as SEM, AFM, and standard particle filtration.

Grattoni, Alessandro↗
NASA NTRS2009

Performance of an SOI Boot-Strapped Full-Bridge MOSFET Driver, Type CHT-FBDR, under Extreme Temperatures

Electronic systems designed for use in deep space and planetary exploration missions are expected to encounter extreme temperatures and wide thermal swings. Silicon-based devices are limited in their wide-temperature capability and usually require extra measures, such as cooling or heating mechanisms, to provide adequate ambient temperature for proper operation. Silicon-On-Insulator (SOI) technology, on the other hand, lately has been gaining wide spread use in applications where high temperatures are encountered. Due to their inherent design, SOI-based integrated circuit chips are able to operate at temperatures higher than those of the silicon devices by virtue of reducing leakage currents, eliminating parasitic junctions, and limiting internal heating. In addition, SOI devices provide faster switching, consume less power, and offer improved radiation-tolerance. Very little data, however, exist on the performance of such devices and circuits under cryogenic temperatures. In this work, the performance of an SOI bootstrapped, full-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Patterson, Richard↗
NASA NTRS1994

Porous silicon carbide (SiC) semiconductor device

A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.

Shor, Joseph S.↗