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At least 109 records · Page 6

Terahertz Array Receivers with Integrated Antennas

Highly sensitive terahertz heterodyne receivers have been mostly single-pixel. However, now there is a real need of multi-pixel array receivers at these frequencies driven by the science and instrument requirements. In this paper we explore various receiver font-end and antenna architectures for use in multi-pixel integrated arrays at terahertz frequencies. Development of wafer-level integrated terahertz receiver front-end by using advanced semiconductor fabrication technologies has progressed very well over the past few years. Novel stacking of micro-machined silicon wafers which allows for the 3-dimensional integration of various terahertz receiver components in extremely small packages has made it possible to design multi-pixel heterodyne arrays. One of the critical technologies to achieve fully integrated system is the antenna arrays compatible with the receiver array architecture. In this paper we explore different receiver and antenna architectures for multi-pixel heterodyne and direct detector arrays for various applications such as multi-pixel high resolution spectrometer and imaging radar at terahertz frequencies.

direct detector arrays↗

Charge Resolution of the Silicon Matrix of the ATIC Experiment

ATIC (Advanced Thin Ionization Calorimeter) is a balloon borne experiment designed to measure the cosmic ray composition for elements from hydrogen to iron and their energy spectra from approx.50 GeV to near 100 TeV. It consists of a Si-matrix detector to determine the charge of a CRT particle, a scintillator hodoscope for tracking, carbon interaction targets and a fully active BGO calorimeter. ATIC had its first flight from McMurdo, Antarctica from 28/12/2000 to 13/01/2001. The ATIC flight collected approximately 25 million events. The silicon matrix of the ATIC spectrometer is designed to resolve individual elements from proton to iron. To provide this resolution careful calibration of each pixel of the silicon matrix is required. Firstly, for each electronic channel of the matrix the pedestal value was subtracted taking into account its drift during the flight. The muon calibration made before the flight was used then to convert electric signals (in ADC channel number) to energy deposits in each pixel. However, the preflight muon calibration was not accurate enough for the purpose, because of lack of statistics in each pixel. To improve charge resolution the correction was done for the position of Helium peak in each pixel during the flight . The other way to set electric signals in electronics channels of the Si-matrix to one scale was correction for electric channel gains accurately measured in laboratory. In these measurements it was found that small different nonlinearities for different channels are present in the region of charge Z > 20. The correction for these non-linearities was not done yet. In linear approximation the method provides practically the same resolution as muon calibration plus He-peak correction. For searching a pixel with the signal of primary particle an indication from the cascade in the calorimeter was used. For this purpose a trajectory was reconstructed using weight centers of energy deposits in BGO layers. The point of intersection of this trajectory with Si-matrix and its RMS was determined. The pixel with maximal signal in 3sigma region was taken as sought. The signal in this pixel was corrected by trajectory zenith angle. The preliminary results on charge resolution of the Si-matrix in the range from protons to iron are presented.

Zatsepin, V. I.↗

Low-background direct readout array performance

The development and evaluation of an integrated array of antimony-doped silicon detectors is described. The spectral range of extrinsic silicon-integrated arrays useful for low-background IR astronomical applications is extended to about 31 microns with this development. The 58 x 62-element array is accessed by a direct readout multiplexer. The device is evaluated with a flexible microcomputer-based drive and readout electronics system in a low-background test dewar. Acceptance testing indicates single-pixel NEPs in the mid-10 to the -18th W/sq rt Hz range, and good global uniformity statistics.

Goebel, J. H.↗

Digital array scanned interferometers for astronomy

Investigations are reported of digital array scanned interferometers (DASI) with silicon CCD array detectors to define the operational capabilities of a mapping (polarimetric) spectrometer for astronomical applications based on these instruments. For spectral mapping, spatially resolved spectra using a cylindrical lens to image in the interferometers's redundant coordinate are given. The signal-to-noise characteristics of the Fourier transformed data are demonstrated with regard to the effects of a rectangular sampling function, spectral multiplexing and the pixel-to-pixel variation of the CCD array. These data indicate that DASIs can offer simple, versatile (polarization) mapping spectrometers suitable for spectral mapping observations from the ultraviolet to the infrared of extended sources at variable spatial resolution, particularly where long term stable operation is essential, as for spacecraft instruments.

Smith, Wm. Hayden↗

Parallel asynchronous hardware implementation of image processing algorithms

Research is being carried out on hardware for a new approach to focal plane processing. The hardware involves silicon injection mode devices. These devices provide a natural basis for parallel asynchronous focal plane image preprocessing. The simplicity and novel properties of the devices would permit an independent analog processing channel to be dedicated to every pixel. A laminar architecture built from arrays of the devices would form a two-dimensional (2-D) array processor with a 2-D array of inputs located directly behind a focal plane detector array. A 2-D image data stream would propagate in neuron-like asynchronous pulse-coded form through the laminar processor. No multiplexing, digitization, or serial processing would occur in the preprocessing state. High performance is expected, based on pulse coding of input currents down to one picoampere with noise referred to input of about 10 femtoamperes. Linear pulse coding has been observed for input currents ranging up to seven orders of magnitude. Low power requirements suggest utility in space and in conjunction with very large arrays. Very low dark current and multispectral capability are possible because of hardware compatibility with the cryogenic environment of high performance detector arrays. The aforementioned hardware development effort is aimed at systems which would integrate image acquisition and image processing.

Coon, Darryl D.↗

The South Pole Imaging Fabry Perot Interferometer (SPIFI)

The design and construction of the South Pole imaging Fabry-Perot interferometer (SPIFI) is reported. The SPIFI is a direct detection imaging spectrometer for use in the far infrared and submillimeter bands accessible to the 1.7 m telescope at the South Pole, and in the submillimeter bands accessible to the 15 m James Clerk Maxwell Telescope (JCMT), HI. It employs a 5 x 5 silicon bolometer array and three cryogenic Fabry Perot interferometers in series in order to achieve velocity resolutions of between 300 km/s and 30 km/s over the entire field of view with a resolution of up to 1 km/s at the center pixel. The scientific justification for the instrument is discussed, considering the spectral lines available to SPIFI. The optical path, the cryogenic Fabry-Perot, the adiabatic demagnetization refrigerator and the detector array are described. The instrument's sensitivity is presented and compared with coherent systems.

Stacey, G. J.↗

The development of infrared detectors and mechanisms for use in future infrared space missions

The environment above earth's atmosphere offers significant advantages in sensitivity and wavelength coverage in infrared astronomy over ground-based observatories. In support of future infrared space missions, technology development efforts were undertaken to develop detectors sensitive to radiation between 2.5 micron and 200 micron. Additionally, work was undertaken to develop mechanisms supporting the imaging and spectroscopy requirements of infrared space missions. Arsenic-doped-Silicon and Antimony-doped-Silicon Blocked Impurity Band detectors, responsive to radiation between 4 micron and 45 micron, were produced in 128x128 picture element arrays with the low noise, high sensitivity performance needed for space environments. Technology development continued on Gallium-doped-Germanium detectors (for use between 80 micron and 200 micron), but were hampered by contamination during manufacture. Antimony-doped-Indium detectors (for use between 2.5 micron and 5 micron) were developed in a 256x256 pixel format with high responsive quantum efficiency and low dark current. Work began on adapting an existing cryogenic mechanism design for space-based missions; then was redirected towards an all-fixed optical design to improve reliability and lower projected mission costs.

Houck, James R.↗

Kilopixel X-Ray Microcalorimeter Arrays for Astrophysics: Device Performance and Uniformity

We are developing kilopixel arrays of TES microcalorimeters to enable high-resolution x-ray imaging spectrometers for future x-ray observatories and laboratory astrophysics experiments. Our current array design was targeted as a prototype for the X-ray Microcalorimeter Spectrometer proposed for the International X-ray Observatory, which calls for a 40×40-pixel core array of 300 micron devices with 2.5 eV energy resolution (at 6 keV). Here we present device characterization of our 32×32 arrays, including x-ray spectral performance of individual pixels within the array. We present our results in light of the understanding that our Mo/Au TESs act as weak superconducting links, causing the TES critical current (I(sub c)) and transition shape to oscillate with applied magnetic field (B). We show I(sub c)(B) measurements and discuss the uniformity of these measurements across the array, as well as implications regarding the uniformity of device noise and response. In addition, we are working to reduce pixel-to-pixel electrical and thermal crosstalk; we present recent test results from an array that has microstrip wiring and an angle-evaporated copper backside heatsinking layer, which provides copper coverage on the four sidewalls of the silicon wells beneath each pixel.

Transition-edge sensors A[center dot] Superconduct↗

Astronomical applications of the new Goddard Si:Bi 16 x 16 array camera system

An improved 4-18 micron array camera system has been developed at NASA Goddard Space Flight Center for astronomical protometry, using 16 x 16 Si:Bi (bismuth dope silicon) accumulation mode charge injection device (AMCID) with 256 active pixels. An astronomical observing program using this device has been carried out. The 16 x 16 device had sufficiently good sensitivity, uniformity and noise characteristics to be used for successful observations at the Steward Observatory Mt. Lemmon 60 and 61-inch telescopes in May 1983, and at the NASA Infrared Telescope Facility (IRTF) at Mauna Kea in August 1983. Initial results indicate that this detector has sensitivity and noise characteristics comparable to other devices from the same generation of Aerojet arrays.

Lamb, G.↗

An Integrated Imaging Detector of Polarization and Spectral Content

A new type of image detector has been designed to simultaneously analyze the polarization of light at all picture elements in a scene. The Integrated Dual Imaging Detector (IDID) consists of a polarizing beamsplitter bonded to a charge-coupled device (CCD), with signal-analysis circuitry and analog-to-digital converters, all integrated on a silicon chip. It should be capable of 1:10(exp 4) polarization discrimination. The IDID should simplify the design and operation of imaging polarimeters and spectroscopic imagers used, for example, in atmospheric and solar research. Innovations in the IDID include (1) two interleaved 512 x 1024-pixel imaging arrays (one for each polarization plane); (2) large dynamic range (well depth of 10(exp 6) electrons per pixel); (3) simultaneous readout of both images at 10 million pixels per second each; (4) on-chip analog signal processing to produce polarization maps in real time; (5) on-chip 10-bit A/D conversion. When used with a lithium-niobate Fabry-Perot etalon or other color filter that can encode spectral information as polarization, the IDID can collect and analyze simultaneous images at two wavelengths. Precise photometric analysis of molecular or atomic concentrations in the atmosphere is one suggested application. When used in a solar telescope, the IDID will charge the polarization, which can then be converted to maps of the vector magnetic fields on the solar surface.

Rust, D. M.↗

Active Pixel Sensors: Are CCD's Dinosaurs?

Charge-coupled devices (CCD's) are presently the technology of choice for most imaging applications. In the 23 years since their invention in 1970, they have evolved to a sophisticated level of performance. However, as with all technologies, we can be certain that they will be supplanted someday. In this paper, the Active Pixel Sensor (APS) technology is explored as a possible successor to the CCD. An active pixel is defined as a detector array technology that has at least one active transistor within the pixel unit cell. The APS eliminates the need for nearly perfect charge transfer -- the Achilles' heel of CCDs. This perfect charge transfer makes CCD's radiation 'soft,' difficult to use under low light conditions, difficult to manufacture in large array sizes, difficult to integrate with on-chip electronics, difficult to use at low temperatures, difficult to use at high frame rates, and difficult to manufacture in non-silicon materials that extend wavelength response.

Fossum, Eric R.↗

Integration of Multilevel Superconducting Buried Wiring Layers with Transition-Edge Sensor Detectors for Large Scale Arrays

Lynx, one of the four mission concepts under consideration for the next Astrophysics DecadalReview, will include a microcalorimeter array consisting of more than 100,000 pixels in a compact arrangement with absorber pitch as small as 25 microns. In order to realize the desired array scale, fine-pitch multi-level superconducting wiring with high yield, compatible with rapid expansion of our hydra absorber designs, is essential. We have demonstrated a method of integrating transition edge sensor (TES) microcalorimeters with suitable multilevel buried wiring, fabricated at MIT Lincoln Laboratory using advanced tools dedicated to superconducting circuit fabrication. The TES Mo/Au bilayer is deposited on a high-quality oxide surface created by chemical-mechanical polishing, allowing tight specifications on the TES superconducting transition and link conductivity to be achieved even though the process order has been inverted. The TESs contact the top-level niobium wiring through vias etched through silicon dioxide down to the topmost wiring layer. The article discusses the overall fabrication process, as wellas the behavior of sensors with different via designs, proximity structures, and lateral sizes. An initial iteration of the integrated fabrication process indicates that microcalorimeters fabricated in this way should meet mission specifications using a Mo/Au bilayer with a reasonable critical temperature below 100 mK.

Detector↗

Advances in Small Pixel TES-Based X-Ray Microcalorimeter Arrays for Solar Physics and Astrophysics

We are developing small-pixel transition-edge-sensor (TES) for solar physics and astrophysics applications. These large format close-packed arrays are fabricated on solid silicon substrates and are designed to accommodate count-rates of up to a few hundred counts/pixel/second at a FWHM energy resolution approximately 2 eV at 6 keV. We have fabricated versions that utilize narrow-line planar and stripline wiring. We present measurements of the performance and uniformity of kilo-pixel arrays, incorporating TESs with single 65-micron absorbers on a 7s-micron pitch, as well as versions with more than one absorber attached to the TES, 4-absorber and 9-absorber "Hydras". We have also fabricated a version of this detector optimized for lower energies and lower count-rate applications. These devices have a lower superconducting transition temperature and are operated just above the 40mK heat sink temperature. This results in a lower heat capacity and low thermal conductance to the heat sink. With individual single pixels of this type we have achieved a FWHM energy resolution of 0.9 eV with 1.5 keV Al K x-rays, to our knowledge the first x-ray microcalorimeter with sub-eV energy resolution. The 4-absorber and 9-absorber versions of this type achieved FWHM energy resolutions of 1.4 eV and 2.1 eV at 1.5 keV respectively. We will discuss the application of these devices for new astrophysics mission concepts.

Bandler, S. R.↗

The QWIP Focal Plane Assembly for NASA's Landsat Data Continuity Mission

The Thermal Infrared Sensor (TIRS) is a QWIP based instrument intended to supplement the Operational Land Imager (OLI) for the Landsat Data Continuity Mission (LDCM). The TIRS instrument is a dual channel far infrared imager with the two bands centered at 10.8 m and 12.0 m. The focal plane assembly (FPA) consists of three 640x512 GaAs Quantum Well Infrared Photodetector (QWIP) arrays precisely mounted to a silicon carrier substrate that is mounted on an invar baseplate. The two spectral bands are defined by bandpass filters mounted in close proximity to the detector surfaces. The focal plane operating temperature is 43K. The QWIP arrays are hybridized to Indigo ISC9803 readout integrated circuits (ROICs). Two varieties of QWIP detector arrays are being developed for this project, a corrugated surface structure QWIP and a grating surface structure QWIP. This paper will describe the TIRS system noise equivalent temperature difference sensitivity as it affects the QWIP focal plane performance requirements: spectral response, dark current, conversion efficiency, read noise, temperature stability, pixel uniformity, optical crosstalk and pixel yield. Additional mechanical constraints as well as qualification through Technology Readiness Level 6 (TRL 6) will also be discussed.

Jhabvala, M.↗

The QWIP Focal Plane Assembly for NASA's Landsat Data Continuity Mission

The Thermal Infrared Sensor (TIRS) is a QWIP based instrument intended to supplement the Operational Land Imager (OLI) for the Landsat Data Continuity Mission (LDCM). The TIRS instrument is a dual channel far infrared imager with the two bands centered at 10.8[mu]m and 12.0[mu]m. The focal plane assembly (FPA) consists of three 640x512 GaAs Quantum Well Infrared Photodetector (QWIP) arrays precisely mounted to a silicon carrier substrate that is mounted on an invar baseplate. The two spectral bands are defined by bandpass filters mounted in close proximity to the detector surfaces. The focal plane operating temperature is 43K. The QWIP arrays are hybridized to Indigo ISC9803 readout integrated circuits (ROICs). Two varieties of QWIP detector arrays are being developed for this project, a corrugated surface structure QWIP and a grating surface structure QWIP. This paper will describe the TIRS system noise equivalent temperature difference sensitivity as it affects the QWIP focal plane performance requirements: spectral response, dark current, conversion efficiency, read noise, temperature stability, pixel uniformity, optical crosstalk and pixel yield. Additional mechanical constraints as well as qualification through Technology Readiness Level 6 (TRL 6) will also be discussed.

Jhabvala, M↗

A New Large-Well 1024x1024 Si:As Detector for the Mid-Infrared

We present a description of a new 1024x1024 Si:As array designed for ground-based use from 5 - 28 microns. With a maximum well depth of 5e6 electrons, this device brings large-format array technology to bear on ground-based mid-infrared programs, allowing entry to the mega-pixel realm previously only accessible to the near-IR. The multiplexer design features switchable gain, a 256x256 windowing mode for extremely bright sources, and it is two-edge buttable. The device is currently in its final design phase at DRS in Cypress, CA. We anticipate completion of the foundry run in October 2005. This new array will enable wide field, high angular resolution ground-based follow up of targets found by space-based missions such as the Spitzer Space Telescope and the Wide-field Infrared Survey Explorer (WISE).

astronomy↗

Performance of the JWST/MIRI Si:As Detectors

The Mid-Infrared Instrument (MIRI) is a 5 to 28 micron imager and spectrometer that is slated to fly aboard the JWST in 2013. Each of the flight arrays is a 1024x1024 pixel Si:As impurity band conductor detector array, developed by Raytheon Vision Systems. JPL, in conjunction with the MIRI science team, has selected the three flight arrays along with their spares. We briefly summarize the development of these devices, then describe the measured performance of the flight arrays along with supplemental data from sister flight-like parts.

arsenic-doped silicon↗

GaAs QWIP Array Containing More Than a Million Pixels

A 1,024 x 1,024-pixel array of quantum-well infrared photodetectors (QWIPs) has been built on a 1.8 x 1.8- cm GaAs chip. In tests, the array was found to perform well in detecting images at wavelengths from 8 to 9 m in operation at temperatures between 60 and 70 K. The largest-format QWIP prior array that performed successfully in tests contained 512 x 640 pixels. There is continuing development effort directed toward satisfying actual and anticipated demands to increase numbers of pixels and pixel sizes in order to increase the imaging resolution of infrared photodetector arrays. A 1,024 x 1,024-pixel and even larger formats have been achieved in the InSb and HgCdTe material systems, but photodetector arrays in these material systems are very expensive and manufactured by fewer than half a dozen large companies. In contrast, GaAs-photodetector-array technology is very mature, and photodetectors in the GaAs material system can be readily manufactured by a wide range of industrial technologists, by universities, and government laboratories. There is much similarity between processing in the GaAs industry and processing in the pervasive silicon industry. With respect to yield and cost, the performance of GaAs technology substantially exceeds that of InSb and HgCdTe technologies. In addition, GaAs detectors can be designed to respond to any portion of the wavelength range from 3 to about 16 micrometers - a feature that is very desirable for infrared imaging. GaAs QWIP arrays, like the present one, have potential for use as imaging sensors in infrared measuring instruments, infrared medical imaging systems, and infrared cameras.

Jhabvala, Murzy↗