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DOE OSTI2025

Quantifying Twist Angles in Cuprate Heterostructures with Anisotropic Raman Signatures

Artificially engineered twisted van der Waals (vdW) heterostructures have unlocked new pathways for exploring emergent quantum phenomena and strongly correlated electronic states. Many of these phenomena are highly sensitive to the twist angle, which can be deliberately tuned to tailor the interlayer interactions. This makes the twist angle a critical tunable parameter, emphasizing the need for precise control and accurate characterization during device fabrication. In particular, twisted cuprate heterostructures based on Bi 2 Sr 2 CaCu 2 O 8 + x (BSCCO) have demonstrated angle-dependent superconducting properties, positioning the twist angle as a key tunable parameter. However, the twisted interface is highly unstable under ambient conditions and vulnerable to damage from conventional characterization tools such as electron microscopy or scanning probe techniques. In this work, a fully non-invasive, polarization-resolved Raman spectroscopy approach is introduced for determining twist angles in artificially stacked BSCCO heterostructures. By analyzing twist-dependent anisotropic vibrational Raman modes, particularly utilizing the out-of-plane A 1g vibrational mode of Bi/Sr at ≈116 cm −1 , clear optical fingerprints of the rotational misalignment between cuprate layers are identified. The high-resolution confocal Raman setup, equipped with polarization control and RayShield filtering down to 10 cm −1 , allows for reliable and reproducible measurements without compromising the material's structural integrity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2024

Quantum sensing using a qubit for the detection of ionizing radiation

Quantum sensing utilizes the inherent sensitivity of a quantum system to external stimuli. Our goal is to leverage this sensitivity to develop a quantum sensor designed for the detection of ionizing radiation. Here we report on the design, fabrication, and measurement of a new quantum device for hard x-ray and gamma-ray detection. Our quantum device is based on a superconducting quantum bit (qubit) with superconducting tunnel junctions as the core device elements. We describe our experimental investigation directed toward the detection metrics of energy resolution, dynamic range, and active area. In contrast to existing superconducting detectors, the active area per qubit may be much larger than the physical area of the tunnel junctions or the physical area of the qubit device, due to the sensitivity of quantum coherence to ionizing radiation deposition within a radius on the millimeter or centimeter scale. Furthermore, our experimental design enables an ionizing radiation source at room temperature to be detected by our quantum sensor at low temperature.

qubit↗

NASA NTRS2012

Development of Fast, Background-Limited Transition-Edge Sensors for the Background-Limited Infrared/Sub-Millimetre Spectrograph (BLISS) for SPICA

We report experimental progress toward demonstrating background-limited arrays of membrane-isolated transition-edge sensors (TESs) for the Background Limited Infrared/Sub-mm Spectrograph (BLISS). BLISS is a space-borne instrument with grating spectrometers for wavelengths lambda = 35-435 microns and with R = lambda/(delta)lambda approx. 500. The goals for BLISS TESs are: noise equivalent power (NEP) = 5x10(exp -20) W/Hz(1/2) and response time t<30ms. We expect background-limited performance from bilayers TESs with T(sub c)=65mK and G=15fW/K. However, such TESs cannot be operated at 50mK unless stray power on the devices, or dark power PD, is less than 200aW. We describe criteria for measuring P? that requires accurate knowledge of TC. Ultimately, we fabricated superconducting thermistors from Ir (T(sub c) > or = 135mK) and Mo/Cu proximitized bilayers, where T(sub c) is the thermistor transition temperature. We measured the Ir TES arrays in our 50mK adiabatic demagnetization refrigerator test system, which can measure up to eight 1x32 arrays simultaneously using a time-division multiplexer, as well as our single-pixel test system which can measure down to 15mK. In our previous Ir array measurements our best reported performance was NEP=2.5x10(exp -19) W/Hz(1/2) and tapprox.5ms for straight-beam TESs. In fact, we expected NEPapprox.1.5x10(exp -19)W/Hz(1/2) for meander beam TESs, but did not achieve this previously due to 1/f noise. Here, we detail improvements toward measuring the expected NEP and demonstrate NEP=(1.3+0.2)x10(exp -19)W/Hz(1/2) in our single-pixel test system and NEP=(1.6+0.3)x10(exp -19)W/Hz(1/2) in our array test system.

transition-edge sensors↗

DOE OSTI2024

Charge- 4 e and Charge- 6 e Flux Quantization and Higher Charge Superconductivity in Kagome Superconductor Ring Devices

The flux quantization is a key indication of electron pairing in superconductors. For example, the well-known h / 2 e flux quantization is considered strong evidence for the existence of charge- 2 e , two-electron Cooper pairs. Here we report evidence for multicharge flux quantization in mesoscopic ring devices fabricated using the transition-metal kagome superconductor CsV 3 Sb 5 . We perform systematic magnetotransport measurements and observe unprecedented quantization of magnetic flux in units of h / 4 e and h / 6 e in magnetoresistance oscillations. Specifically, at low temperatures, magnetoresistance oscillations with period h / 2 e are detected, as expected from the flux quantization for charge- 2 e superconductivity. We find that the h / 2 e oscillations are suppressed and replaced by resistance oscillations with h / 4 e periodicity when the temperature is increased. Increasing the temperature further suppresses the h / 4 e oscillations, and robust resistance oscillations with h / 6 e periodicity emerge as evidence for charge- 6 e flux quantization. Our observations provide the first experimental evidence for the existence of multicharge flux quanta and emergent quantum matter exhibiting higher-charge superconductivity in the strongly fluctuating region above the charge- 2 e Cooper pair condensate, revealing new insights into the intertwined and vestigial electronic order in kagome superconductors. Published by the American Physical Society 2024

Physics↗

NASA NTRS2012

NASA Tech Briefs, January 2012

Contents of this issue are: (1) Energy-Based Tetrahedron Sensor for High-Temperature, High-Pressure Environments (2) Handheld Universal Diagnostic Sensor (3) Large-Area Vacuum Ultraviolet Sensors (4) Fiber Bragg Grating Sensor System for Monitoring Smart Composite Aerospace Structures (5) Health-Enabled Smart Sensor Fusion Technology (6) Extended-Range Passive RFID and Sensor Tags (7) Hybrid Collaborative Learning for Classification and Clustering in Sensor Networks (8) Self-Healing, Inflatable, Rigidizable Shelter (9) Improvements in Cold-Plate Fabrication (10) Technique for Radiometer and Antenna Array Calibration - TRAAC (11) Real-Time Cognitive Computing Architecture for Data Fusion in a Dynamic Environment (12) Programmable Digital Controller (13) Use of CCSDS Packets Over SpaceWire to Control Hardware (14) Key Decision Record Creation and Approval Module (15) Enhanced Graphics for Extended Scale Range (16) Debris Examination Using Ballistic and Radar Integrated Software (17) Data Distribution System (DDS) and Solar Dynamic Observatory Ground Station (SDOGS) (18) Integration Manager (19) Eclipse-Free-Time Assessment Tool for IRIS (20) Automated and Manual Rocket Crater Measurement Software (21) MATLAB Stability and Control Toolbox Trim and Static Stability Module (22) Patched Conic Trajectory Code (23) Ring Image Analyzer (24) SureTrak Probability of Impact Display (25) Implementation of a Non-Metallic Barrier in an Electric Motor (26) Multi-Mission Radioisotope Thermoelectric Generator Heat Exchangers for the Mars Science Laboratory Rover (27) Uniform Dust Distributor for Testing Radiative Emittance of Dust-Coated Surfaces (28) MicroProbe Small Unmanned Aerial System (29) Highly Stable and Active Catalyst for Sabatier Reactions (30) Better Proton-Conducting Polymers for Fuel-Cell Membranes (31) CCD Camera Lens Interface for Real-Time Theodolite Alignment (32) Peregrine 100-km Sounding Rocket Project (33) SOFIA Closed- and Open-Door Aerodynamic Analyses (34) Sonic Thermometer for High-Altitude Balloons (35) Near-Infrared Photon-Counting Camera for High-Sensitivity Observations (36) Integrated Optics Achromatic Nuller for Stellar Interferometry (37) High-Speed Digital Interferometry (38) Ultra-Miniature Lidar Scanner for Launch Range Data Collection (39) Shape and Color Features for Object Recognition Search (40) Explanation Capabilities for Behavior-Based Robot Control (41) A DNA-Inspired Encryption Methodology for Secure, Mobile Ad Hoc Networks (42) Quality Control Method for a Micro-Nano-Channel Microfabricated Device (43) Corner-Cube Retroreflector Instrument for Advanced Lunar Laser Ranging (44) Electrospray Collection of Lunar Dust (45) Fabrication of a Kilopixel Array of Superconducting Microcalorimeters with Microstripline Wiring Spacecraft Attitude Tracking and Maneuver Using Combined Magnetic Actuators (46) Coherent Detector for Near-Angle Scattering and Polarization Characterization of Telescope Mirror Coatings

Source record↗

DOE OSTI2025

Non-Markovian dynamics of a superconducting qubit in a phononic bandgap

Reducing decoherence in quantum computers rapidly decreases the overhead needed to construct a logical qubit from physical qubits. In solid-state systems, a class of defects known as two-level systems is a major source of decoherence. Currently, superconducting qubit experiments reduce dissipation due to the two-level systems by using large device dimensions. However, this approach only provides partial protection and results in a trade-off between qubit size and dissipation. In this work, we instead engineer the interactions between a qubit and the surrounding two-level systems using phononics. We fabricate a superconducting qubit on a phononic-bandgap metamaterial that suppresses phonon emission mediated by the two-level systems. The phonon-engineered bath of two-level systems shows increased lifetime and affects the thermalization dynamics of the qubit. Within the phononic bandgap, we observe the emergence of a non-Markovian qubit behaviour. Further, combined with qubit miniaturization, our approach could substantially extend the qubit relaxation times.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2024

Synthesis and electrical transport properties of superconducting platinum silicide thin films and devices

Here, we evaluate the material characteristics of superconducting platinum silicide (PtSi) thin films as candidate materials for superconducting quantum information devices compatible with silicon technology. These films were synthesized using magnetron sputtering under ultrahigh vacuum conditions, followed by rapid thermal annealing. Polycrystalline PtSi films synthesized by this method have the favorable properties of superconducting critical temperature of 0.95 K and relatively long zero-temperature Ginzburg-Landau coherence length of 76 nm. We further studied coplanar microbridge devices fabricated by electron beam lithography and chlorine-free reactive ion etching, finding that the temperature-dependent critical current density follows the Ginzburg Landau depairing mechanism.

36 MATERIALS SCIENCE↗

NASA NTRS2004

THz Hot-Electron Photon Counter

We present a concept for the hot-electron transition-edge sensor capable of counting THz photons. The main need for such a sensor is a spectroscopy on future space telescopes where a background limited NEP approx. 10(exp -20) W/H(exp 1/2) is expected at around 1 THz. Under these conditions, the rate of photon arrival is very low and any currently imaginable detector with sufficient sensitivity will operate in the photon counting mode. The Hot-Electron Photon Counter based on a submicron-size Ti bridge has a very low heat capacity which provides a high enough energy resolution (approx.140 GHz) at 0.3 K. With the sensor time constant of a few microseconds, the dynamic range would be approx. 30 dB. The sensor couples to radiation via a planar antenna and is read by a SQUID amplifier or by a 1-bit RSFQ ADC. A compact array of the antenna-coupled counters can be fabricated on a silicon wafer without membranes.

radiation detectors↗

DOE OSTI2023

Low-loss Si-based Dielectrics for High Frequency Components of Superconducting Detectors

Silicon-based dielectric is crucial for many superconducting devices, including high-frequency transmission lines, filters, and resonators. Defects and contaminants in the amorphous dielectric and at the interfaces between the dielectric and metal layers can cause microwave losses and degrade device performance. Optimization of the dielectric fabrication, device structure, and surface morphology can help mitigate this problem. We present the fabrication of silicon oxide and nitride thin film dielectrics. We then characterized them using Scanning Electron Microscopy, Atomic Force Microscopy, and spectrophotometry techniques. The samples were synthesized using various deposition methods, including Plasma-Enhanced Chemical Vapor Deposition and magnetron sputtering. The film's morphology and structure were modified by adjusting the deposition pressure and gas flow. The resulting films were used in superconducting resonant systems consisting of planar inductors and capacitors. Measurements of the resonator properties, including their quality factor, were performed.

low-loss dielectrics↗

NASA NTRS2002

Superconducting Mixers for Far-Infrared Spectroscopy

The goal of this project was to fabricate and test planar arrays of superconducting mixers for the 2-6 THz band. The technology is intended for multi-beam receivers aboard Explorer-class missions and the SOFIA Airborne Observatory. The mixer technology is the superconducting transition-edge microbolometer, which is more commonly known as the Hot-Electron micro-Bolometer (HEB). As originally proposed, two superconducting technologies were to be developed: (1) low-Tc niobium HEBs which could approach quantum-noise-limited sensitivities but require cooling to 2- 4 K, and (2) high-Tc YBCO HEBs with sensitivities 10 times worse but with a relaxed cooling requirement of 30-60 K. The low-Tc devices would be best for astronomy applications on SOFIA, whereas the high-Tc devices would be more suitable for planetary missions using systems without stored cryogens. The work plan called for planar micro-fabrication and initial testing of HEB devices at the NIST Boulder clean-room facility. Subsequent assembly and RF testing of selected devices would be done at the CASA laboratory at U. Colorado. Approximately 1-year after work began on this project, Dr. Eyal Gerecht joined the NIST group, and assumed day-to-day responsibility for Nb-HEB development at NIST outside of micro-fabrication. The YBCO-HEB work was to be guided by Dr. Ron Ono, who was the NIST expert in YBCO technology. Unfortunately, recurrent health problems limited the time Ron could devote to the project in its first year. These problems became aggravated in early 2001, and sadly led to Ron's death in October, 2001. His loss was not only a blow to his friends and associates at NIST, but was mounted by the US superconductivity community at large. With his passing, work on high-Tc HEBs ceased at NIST. There was no one to replace him or his expertise. Our work subsequently shifted solely to Nb-HEB devices. In the sections which follow, our progress in the development of diffusion-cooled Nb-HEB mixers is detailed. To simplify the terminology, these devices will subsequently be called DHEB mixers to distinguish them from phonon-cooled devices (PHEBs).

Betz, A. L.↗

NASA NTRS2012

Development of Fast, Background-Limited Transition-Edge Sensors for the Background-Limited Infrared/Sub-mm Spectrograph (BLISS) for SPICA

We report experimental progress toward demonstrating background-limited arrays of membrane-isolated transition-edge sensors (TESs) for the Background Limited Infrared/Sub-mm Spectrograph (BLISS). BLISS is a space-borne instrument with grating spectrometers for wavelengths lambda=35-435 micron and with R=lambda/delta lambda approximately equals 500. The goals for BLISS TESs are: noise equivalent power (NEP) = 5x10 (sup -20) W/Hz(exp 1/2) and response time tau <30ms. We expect background-limited performance from bilayers TESs with T(sub c) = 65mK and G=15fW/K. However, such TESs cannot be operated at 50mK unless stray power on the devices, or dark power P(sub D), is less than 200aW. We describe criteria for measuring P(sub D) that requires accurate knowledge of TC. Ultimately, we fabricated superconducting thermistors from Ir (T(sub c) >= 135mK) and Mo/Cu proximitized bilayers, where T(sub c) is the thermistor transition temperature. We measured the Ir TES arrays in our 50mK adiabatic demagnetization refrigerator test system, which can measure up to eight 1x32 arrays simultaneously using a time-division multiplexer, as well as our single-pixel test system which can measure down to 15mK. In our previous Ir array measurements our best reported performance was NEP=2.5x10(exp -19) W/Hz(sub 1/2) and Tau approximately equals 5ms for straight-beam TESs. In fact, we expected NEP approximately equals 1.5x10(exp -19)?W/Hz(sup 1/2) for meander beam TESs, but did not achieve this previously due to 1/f noise. Here, we detail improvements toward measuring the expected NEP and demonstrate NEP=(1.3+0.2)x10 (sup -19)W/Hz(exp 1/2) in our single-pixel test system and NEP=(1.6+/-0.3)x10(sup -19)W/Hz(sup 1/2) in our array test system.

infrared spectrometer↗

DOE OSTI2023

Precision Measurement of the Microwave Dielectric Loss of Sapphire in the Quantum Regime with Parts-per-Billion Sensitivity

Dielectric loss is known to limit state-of-the-art superconducting qubit lifetimes. Recent experiments imply upper bounds on bulk dielectric loss tangents on the order of 100 parts per billion but because these inferences are drawn from fully fabricated devices with many loss channels, these experiments do not definitely implicate or exonerate the dielectric. To resolve this ambiguity, we devise a measurement method capable of separating and resolving bulk dielectric loss with a sensitivity at the level of 5 ×10 –9 . The method, which we call the dielectric dipper, involves the in situ insertion of a dielectric sample into a high-quality microwave cavity mode. Smoothly varying the participation of the sample in the cavity mode enables a differential measurement of the dielectric loss tangent of the sample. The dielectric dipper can probe the low-power behavior of dielectrics at cryogenic temperatures and does so without the need for any lithographic process, enabling controlled comparisons of substrate materials and processing techniques. We demonstrate the method with measurements of sapphire grown by edge-defined film-fed growth (EFG) in comparison to high-grade sapphire grown by the heat-exchanger method (HEMEX). For EFG sapphire, we infer a bulk loss tangent of 63⁢(8) ×10 –9 and a substrate-air interface loss tangent of 15⁢(3) ×10 –4 (assuming a sample surface thickness of 3 nm). For a typical transmon, this bulk loss tangent would limit device quality factors to Q ≲20 ×10 6 , suggesting that bulk loss is likely the dominant loss mechanism in the longest-lived transmons on sapphire. We also demonstrate this method on HEMEX sapphire and bound its bulk loss tangent to be less than 19⁢(6) ×10 –9 . As this bound is about 3 times smaller than the bulk loss tangent of EFG sapphire, the use of HEMEX sapphire as a substrate would lift the bulk dielectric coherence limit of a typical transmon qubit to several milliseconds.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

NASA NTRS1991

Comparative study of bolometric and non-bolometric switching elements for microwave phase shifters

The performance of semiconductor and high critical temperature superconductor switches is compared as they are used in delay-line-type microwave and millimeter-wave phase shifters. Such factors as their ratios of the off-to-on resistances, parasitic reactances, power consumption, speed, input-to-output isolation, ease of fabrication, and physical dimensions are compared. Owing to their almost infinite off-to-on resistance ratio and excellent input-to-output isolation, bolometric superconducting switches appear to be quite suitable for use in microwave phase shifters; their only drawbacks are their speed and size. The SUPERFET, a novel device whose operation is based on the electric field effect in high critical temperature ceramic superconductors is also discussed. Preliminary results indicate that the SUPERFET is fast and that it can be scaled; therefore, it can be fabricated with dimensions comparable to semiconductor field-effect transistors.

Tabib-Azar, Massood↗

NASA NTRS1991

Comparative study of bolometric and non-bolometric switching elements for microwave phase shifters

Tabib-Azar, Massood↗

DOE OSTI2025

Modulating Oxide‐Based Quantum Materials by Ion Implantation

Ion implantation has emerged as a powerful tool for manipulating and investigating oxide quantum materials, where strong electron correlations give rise to exotic phases and functionalities. This Review examines how controlled ion bombardment enables targeted modulation of structural, electronic, and magnetic properties in complex oxides. Recent advances in ion beam techniques is analyzed that provide unprecedented control over defect profiles, from point defects to extended damage cascades. In application, ion irradiation has demonstrated the ability to tune quantum phenomena including metal‐insulator transitions, magnetism, and superconductivity through selective doping, defect creation, and lattice strain. The ability to write quantum states with nanoscale precision using focused ion beams is opening new paths for quantum device fabrication. Challenges in understanding radiation damage mechanisms in strongly correlated systems is discussed, and identify opportunities for designing quantum functionality through defect‐engineering approaches. The technique's demonstrated capability to write quantum states with nanoscale precision, combined with its compatibility with existing semiconductor processing infrastructure, suggests a clear pathway for translating fundamental discoveries in quantum materials into practical technological applications.

defect engineering↗

NASA NTRS2004

Progress Towards High-Sensitivity Arrays of Detectors of Sub-mm Radiation Using Superconducting Tunnel Junctions with Integrated Radio Frequency Single-Electron Transistors

For high resolution imaging and spectroscopy in the FIR and submillimeter, space observatories will demand sensitive, fast, compact, low-power detector arrays with 104 pixels and sensitivity less than 10(exp -20) W/Hz(sup 0.5). Antenna-coupled superconducting tunnel junctions with integrated rf single-electron transistor readout amplifiers have the potential for achieving this high level of sensitivity, and can take advantage of an rf multiplexing technique. The device consists of an antenna to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure current through junctions contacting the absorber. We describe optimization of device parameters, and results on fabrication techniques for producing devices with high yield for detector arrays. We also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.

Stevenson, T. R.↗

NASA NTRS1992

Electrical-transport properties and microwave device performance of sputtered TlCaBaCuO superconducting thin films

The paper describes the processing and electrical transport measurements for achieving reproducible high-Tc and high-Jc sputtered TlCaBaCuO thin films on LaAlO3 substrates, for microelectronic applications. The microwave properties of TlCaBaCuO thin films were investigated by designing, fabricating, and characterizing microstrip ring resonators with a fundamental resonance frequency of 12 GHz on 10-mil-thick LaAlO3 substrates. Typical unloaded quality factors for a ring resonator with a superconducting ground plane of 0.3 micron-thickness and a gold ground plane of 1-micron-thickness were above 1500 at 65 K. Typical values of penetration depth at 0 K in the TlCaBaCuO thin films were between 7000 and 8000 A.

Subramanyam, G.↗

DOE OSTI2020

Characterization of Amplification Properties of the Superconducting-Ferromagnetic Transistor

Here we report on the measurement results of the superconducting-ferromagnetic transistors (SFTs). The devices were made at Northwestern University and Hypres (SeeQC), Inc. (Nevirkovets et al., 2014; 2015). SFT is a multiterminal device with the SIS'FIFS (or SFIFS'IS) structure (where S, I, and F denote a superconductor, an insulator, and a ferromagnetic material, respectively) exploiting intense quasiparticle injection in order to modify the nonlinear I-V curve of a superconducting tunnel junction. SFT is capable of providing voltage, current, and power amplification while having good input/output isolation. We characterized the devices using different measurement techniques. We measured S parameters of the single- and double-acceptor devices at frequencies up to 5 MHz. Importantly, we confirmed that the isolation between the input and output of the device is quite good. However, the techniques typically employed to characterize semiconductor devices do not allow for revealing the full potential of our low-resistive SFT devices, especially those having two acceptors. In the latter case, we also tested the devices using the battery-powered current sources with floating grounds. Analyzing double-acceptor I-V curves recorded at different levels of injection currents, for an optimal load, we deduced a small-signal voltage gain of 33 and a power gain of 2.4. We suggest that further improvement of the SFT device parameters is possible in optimized devices, so that the device potentially may serve as a preamplifier for readout of output signals of cryogenic detectors and be useful as an element of other superconductor-based circuits. In addition, we used scanning transmission electron microscopy to identify some problems in the fabrication of the devices without any planarization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗