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Electronic circuit used relay coil to sense and control dc voltage. The control relay is driven by a switching transistor that is biased to cutoff for all input up to slightly less than the threshold level.
Fluorescent proteins (FPs) have recently emerged as a serious contender for realizing ultralow threshold room temperature exciton–polariton condensation and lasing. Here, this contribution investigates the thermalization of FP microcavity exciton–polaritons upon optical pumping under ambient conditions. Polariton cooling is realized using a new FP molecule, called mScarlet, coupled strongly to the optical modes in a Fabry–Pérot cavity. Interestingly, at the threshold excitation energy (fluence) of ≈9 nJ per pulse (15.6 mJ cm –2 ), an effective temperature is observed, T eff ≈ 350 ± 35 K close to the lattice temperature indicative of strongly thermalized exciton–polaritons at equilibrium. This efficient thermalization results from the interplay of radiative pumping facilitated by the energetics of the lower polariton branch and the cavity Q-factor. Direct evidence for dramatic switching from an equilibrium state into a metastable state is observed for the organic cavity polariton device at room temperature via deviation from the Maxwell–Boltzmann statistics at k || = 0 above the threshold. Thermalized polariton gases in organic systems at equilibrium hold substantial promise for designing room temperature polaritonic circuits, switches, and lattices for analog simulation.
The rise time, fall time and propagation delay of the logic gates were derived. The effects of total ionizing dose (TID) radiation on the fall and rise times of CMOS logic gates were obtained using C program calculations and PSPICE simulations. The variations of mobility and threshold voltage on MOSFET transistors when subjected to TID radiation were used to determine the dependence of switching times on TID. The results of this work indicate that by increasing the size of P-channel transistor with respect to the N-channel transistors of the CMOS gates, the propagation delay of CMOS logic gate can be made to decrease with, or be independent of an increase in TID radiation.
Phase separation naturally occurs in a variety of magnetic materials and it often has a major impact on both electric and magnetotransport properties. In resistive switching systems, phase separation can be created on demand by inducing local switching, which provides an opportunity to tune the electronic and magnetic state of the device by applying voltage. Here we explore the magnetotransport properties in the ferromagnetic oxide La 0.7 Sr 0.3 MnO 3 (LSMO) during the electrical triggering of an intrinsic metal-insulator transition (MIT), which produces volatile resistive switching. This switching occurs in a characteristic spatial pattern, i.e., the formation of a high-resistance barrier perpendicular to the current flow, enabling an electrically actuated ferromagnetic-paramagnetic-ferromagnetic phase separation. At the threshold voltage of the MIT triggering, both anisotropic and colossal magnetoresistances exhibit anomalies including a large increase in magnitude and a sign flip. Computational analysis revealed that these anomalies originate from the coupling between the switching-induced phase separation state and the intrinsic magnetoresistance of LSMO. Furthermore, this work demonstrates that driving the MIT material into an out-of-equilibrium resistive switching state provides the means for electrical control of the magnetotransport phenomena.
A critical PECL (positive emitter-coupled logic) interface to Xilinx interface needed to be changed on an existing flight board. The new Xilinx input interface used a CMOS (complementary metal-oxide semiconductor) type of input, and the driver could meet its thresholds typically, but not in worst-case, according to the data sheet. The previous interface had been based on comparison with an external reference, but the CMOS input is based on comparison with an internal divider from the power supply. A way to measure what the exact input threshold was for this device for 64 inputs on a flight board was needed. The measurement technique allowed an accurate measurement of the voltage required to switch a Xilinx input from high to low for each of the 64 lines, while only probing two of them. Directly driving an external voltage was considered too risky, and tests done on any other unit could not be used to qualify the flight board. The two lines directly probed gave an absolute voltage threshold calibration, while data collected on the remaining 62 lines without probing gave relative measurements that could be used to identify any outliers. The PECL interface was forced to a long-period square wave by driving a saturated square wave into the ADC (analog to digital converter). The active pull-down circuit was turned off, causing each line to rise rapidly and fall slowly according to the input s weak pull-down circuitry. The fall time shows up as a change in the pulse width of the signal ready by the Xilinx. This change in pulse width is a function of capacitance, pulldown current, and input threshold. Capacitance was known from the different trace lengths, plus a gate input capacitance, which is the same for all inputs. The pull-down current is the same for all inputs including the two that are probed directly. The data was combined, and the Excel solver tool was used to find input thresholds for the 62 lines. This was repeated over different supply voltages and temperatures to show that the interface had voltage margin under all worst case conditions. Gate input thresholds are normally measured at the manufacturer when the device is on a chip tester. A key function of this machine was duplicated on an existing flight board with no modifications to the nets to be tested, with the exception of changes in the FPGA program.
Stochastic fluctuations in power injections from distributed energy resources (DERs) combined with load variability can cause constraint violations (e.g., exceeded voltage limits) in electric distribution systems. To monitor grid operations, sensors are placed to measure important quantities such as the voltage magnitudes. Here, in this paper, we consider a sensor placement problem which seeks to identify locations for installing sensors that can capture all possible violations of voltage magnitude limits. We formulate a bilevel optimization problem that minimizes the number of sensors and avoids false sensor alarms in the upper level while ensuring detection of any voltage violations in the lower level. This problem is challenging due to the nonlinearity of the power flow equations and the presence of binary variables. Accordingly, we employ recently developed conservative linear approximations of the power flow equations that overestimate or underestimate the voltage magnitudes. By replacing the nonlinear power flow equations with conservative linear approximations, we can ensure that the resulting sensor locations and thresholds are sufficient to identify any constraint violations. Additionally, we apply various problem reformulations to significantly improve computational tractability while simultaneously ensuring an appropriate placement of sensors. Lastly, we improve the quality of the results via an approximate gradient descent method that adjusts the sensor thresholds. We demonstrate the effectiveness of our proposed method for several test cases, including a system with multiple switching configurations.
Materials and processing techniques for yielding magnetic memory cores with specified partial set state threshold characteristics were developed as well as integrated magnetic circuit elements
Spin transition (ST) materials are attractive for developing photoswitchable devices, but their slow material transformations limit device applications. Size reduction could enable faster switching, but the photoinduced dynamics at the nanoscale remains poorly understood. Here, we report a femtosecond optical pump multimodal X-ray probe study of polymeric nanorods. Simultaneously tracking the ST order parameter with X-ray emission spectroscopy and structure with X-ray diffraction, we observe photodoping of the low-spin–lattice within ~150 fs. Above a ~16% photodoping threshold, the transition to the high-spin phase occurs following an incubation period assigned to vibrational energy redistribution within the nanorods activating the molecular spin switching. Above ~60% photodoping, the incubation period disappears, and the transition completes within ~50 ps, preceded by the elastic nanorod expansion in response to the photodoping. These results support the feasibility of ST material-based GHz optical switching applications.
Developmental results for solid-state lasers for the mid-IR region are reviewed. Good slope efficiency and reasonable thresholds have been demonstrated for multiply doped mid-IR lasers. Laser efficiency increases as the operating temperature is decreased, due to both reduced threshold and a higher slope efficiency. Good slope efficiencies have been achieved even at room temperature. While Q-switching has been demonstrated at room temperature, it is not nearly as efficient as it is at reduced temperatures.
In this paper, the concept and prototype of an aging detector for silicon carbide (SiC) power metal oxide semiconductor field effect transistor (MOSFET) are proposed and described. It leverages the resonant peak values of gate-source voltage at different instants during the switching transients to decode the change of multiple aging indicators, such as the increases of on-state resistance and threshold voltage. Modeling-based analysis is conducted to support the idea. The detector can be fully integrated into gate drivers without any additional connection to the power stage and is functional during normal power stage operation. A prototype unit was built, and preliminary tests were conducted to validate the idea and the practicality of the detector.
Islanding occurs when a load is energized solely by local generators and can result in frequency and voltage instability, changes in current, and poor power quality. Poor power quality can interrupt industrial operations, damage sensitive electrical equipment, and induce outages upon the resynchronization of the island with the grid. This study proposes an islanding detection method employing a Duffing oscillator to analyze voltage fluctuations at the point of common coupling (PCC) under a high-noise environment. Unlike existing methods, which overlook the noise effect, this paper mitigates noise impact on islanding detection. Power system noise in PCC measurements arises from switching transients, harmonics, grounding issues, voltage sags and swells, electromagnetic interference, and power quality issues that affect islanding detection. Transient events like lightning-induced traveling waves to the PCC can also introduce noise levels exceeding the voltage amplitude by more than seven times, thus disturbing conventional detection techniques. The noise interferes with measurements and increases the nondetection zone (NDZ), causing failed or delayed islanding detection. The Duffing oscillator nonlinear dynamics enable detection capabilities at a high noise level. The proposed method is designed to detect the PCC voltage fluctuations based on the IEEE standard 1547 through the Duffing oscillator. For the voltages beyond the threshold, the Duffing oscillator phase trajectory changes from periodic to chaotic mode and sends an islanded operation command to the inverter. The proposed islanding detection method distinguishes switching transients and faults from an islanded operation. Experimental validation of the method is conducted using a 3.6 kW PV setup.
Optically addressable light valves based on wide bandgap 4H- and 6H-SiC as photoconductors were designed to withstand higher operational laser fluences than the state of-the-art bismuth silicon oxide (BSO; Bi 12 SiO 20 ) based devices. Vanadium-doped SiC was selected as the photoconductors due to their reasonable photoresponsivity while many fold improvement in laser induced damage threshold as compared to BSO. The laser induced damage threshold values of the materials were measured after exposing ~ 200 sites on the samples to increasing levels of fluence of a gaussian pulsed Nd: YAG laser system (1064 nm) with a 5 Hz repetition rate. The measured damage threshold values for BSO, 4H- and 6H-SiC were 0.4 J/cm 2 , 1.75 J/cm 2 and 1.8 J/cm 2 , respectively. Photoconductive switches based on 4H and 6H-SiC samples were characterized at wavelengths of 380 nm, 405 nm, and 447 nm. The peak photoresponsivity values of the 4H- and 6H-SiC materials were measured to be under 380 nm and 405 nm, respectively. The photoconductor was bonded to a BK7 optical window with 5 μm diameter microspheres as spacers. A twisted nematic type E7 liquid crystal (LC) was filled in the 5 μm gap in a vacuum chamber. The desired alignment of the liquid crystal was achieved by mutually orthogonal orientation of LC alignment layers on the two mating faces (SiC and BK7). The fabricated devices were modulated using address beams of wavelengths 380 nm, 405 nm, and 447 nm. In conclusion, required transmission levels of > 90% was achieved for the fabricated OALVs for a sinusoidal voltage waveform that meets the lifetime requirement of the device.
A new class of silicon devices operating without p-n junctions has been studied for radiation hardness. The electric field in these devices is uniform over most of the device, thus causing high-voltage breakdown to increase with electrode spacing. Deep acceptor levels are created in the silicon by diffusing gold atoms into the lattice, or by electron radiation. These acceptor levels, near the center of the band gap, trap out electrons so that the low resistivity of the n-type doped wafer can be raised to intrinsic resistivity. Switching between a high-resistivity state at low currents and a low-resistivity state at high currents occurs at a definite threshold voltage, exhibiting characteristics similar to silicon-controlled rectifiers. Compensating 0.1 ohm-meter (10 ohm-cm) silicon wafers requires electron fluxes of 10 to the 23rd electrons per square meter (10 to the 19th electrons per square centimeter). Experiments demonstrating gamma tolerance to 1 Gigarad(Si) are described. Calculations for maximum tolerable neutron fluence are shown, and a phenomenological explanation for these results is presented.
This is the first reported attempt at investigation of the sBs phenomena in mid IR fibers using externally fed or laser self generated low frequency and microwave frequency phonon waves as diagnostic probes of such processes. The observation of laser excited phonon emissions in the mid IR fiber and direct modulation of CO2 laser pulse transmission by externally imposed low frequency radiation is the first indication of the predicted low sBs threshold in these fibers in the phonon rich mid IR spectral region. The prospect of wide applications of the sBs process in optical switching, phase conjugation and ultimately optical computing and possible deleterious effects in mid IR laser heterodyne spectroscopy, sideband modulation and transmitted power limitation is discussed.
Magnetoresistive random-access memory (MRAM) is a non-volatile memory that exploits electronic spin, rather than charge, to store data. Instead of moving charge on and off a floating gate to alter the threshold voltage of a CMOS transistor (creating different bit states), MRAM uses magnetic fields to flip the polarization of a ferromagnetic material thus switching its resistance and bit state. These polarized states are immune to radiation-induced upset, thus making MRAM very attractive for space application. These magnetic memory elements also have infinite data retention and erase/program endurance. Presented here are results of reliability testing of two space-qualified MRAM products from Aeroflex and Honeywell.
Grid-forming control is widely envisioned as core technology ensuring stable operation of future power systems with increasing deployment of converter-interfaced renewable generation. However, research on grid forming control of wind turbines, especially under faults, is still in its early stages. In this context, this paper augments dual-port grid-forming control for type IV wind turbines with auxiliary controls to enable reliable fault ride through capabilities. In particular, the proposed control does not require a dc chopper or mode switching to grid-following control. Instead, energy-balancing dual-port GFM control is augmented with active rotor speed damping control and threshold virtual impedance for current limiting during faults. Different operating conditions of wind turbines are considered in a detailed electromagnetic transient simulation study to validate the effectiveness of the proposed control.
In itinerant systems, electron-electron interactions may lead to the formation of local magnetic moments and their effective exchange coupling, which in turn gives rise to long-range magnetic order. Therefore, when moment formation is weakened, such as in the single-band Hubbard model on a square lattice with the on-site repulsion being randomly switched off on a fraction $\textit{x}$ of sites, magnetic order is suppressed beyond some critical $x_c$, which was found to lie below the classical percolation threshold $x^{\text{(perc,sq)}}_c$. Here we study dilute magnetism in flat band systems, namely, in the Hubbard model on a “Lieb” lattice. Interestingly, we show that magnetic order persists to x almost twice as large as the classical percolation threshold for the lattice, thus emphasizing the central role of electron itinerancy to the magnetic response. Further, the analysis of the orbital-resolved order parameters reveals that the contribution of the fourfold coordinated $\textit{“d”}$ sites to magnetism is dramatically affected by dilution, while the localized $\textit{“p”}$ states of the flat band provide the dominant contribution to long-range correlations. We also examine the transport properties, which suggest the existence of an insulator-to-metal transition in the same range of the critical magnetic dilution.
Abstract Standard halo occupation distribution (HOD) models predict how galaxies occupy halos based on a single property, the virial mass, M vir . To incorporate galaxy assembly bias, we consider alternative halo mass proxies to use in the HOD. A promising replacement is maximum circular velocity, V max , which measures the halo’s potential well, and successfully predicts galaxy clustering in subhalo abundance matching models. We fit galaxy clustering measurements from SDSS DR7 with two modified HODs besides the standard M vir -based model: one where V max is used as the halo property that determines galaxy occupation, and the other adopting an adjustable combination of M vir and V max . Except for the reduced volume M r < − 20 threshold sample fit with V max alone, neither change improves the model performance in predicting the projected two-point correlation function, w p . We conclude that switching the primary variable to V max does not significantly improve the HOD model’s ability to fit galaxy clustering.