Woven electron emitters for high reliability.
Woven and knitted electron emitters noting reliability, mechanical stability, transparency and efficiency
SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Woven and knitted electron emitters noting reliability, mechanical stability, transparency and efficiency
The kinetics for interfacial electron transfer (ET) from a transparent conductive oxide (tin-doped indium oxide, ITO, Sn:In 2 O 3 ) to molecular acceptors 4-[N,N-di(p-tolyl)amino]benzylphosphonic acid, TPA, and [Ru II (bpy) 2 (4,4' -(PO 3 H 2 ) 2 -bpy)] 2+ , RuP, positioned at variable distances within and beyond the electric double layer (EDL), were quantified in benzonitrile and methanol by nanosecond absorption spectroscopy as a function of the thermodynamic driving force, -ΔG ° . Relevant ET parameters such as the rate constant, k et , reorganization energy, λ, and electronic coupling, Hab, were extracted from the kinetic data. Overall, k et increased as the distance between the molecular acceptor and the conductor decreased. For redox active molecules within the Helmholtz planes of the EDL, k et was nearly independent of -ΔG° , consistent with a negligibly small λ value. Rips–Jortner analysis revealed a non-adiabatic electron transfer mechanism consistent with H ab < 1 cm -1 . The data indicate that the barrier for electron transfer is greatly diminished at the conductor–electrolyte interface.
We present a new method for control of the ion polarization, which is at the basis of the figure-8 ring design of the Jefferson Lab Electron Ion Collider project. The spin transparency is achieved by designing such a synchrotron structure that the net spin rotation angle in one particle turn is zero. The polarization direction of any ions including deuterons can be efficiently controlled using weak quasi-static fields. These fields allow for dynamic adjustment of the polarization direction during an experiment. The main features of the Transparent Spin method are illustrated in a figure-8 collider.
The transparent conducting oxide SnO 2 is a wide bandgap semiconductor that is easily n-type doped and widely used in various electronic and optoelectronic applications. Experimental reports of the electron mobility of this material vary widely depending on the growth conditions and doping concentrations. In this work, we calculate the electron mobility of SnO 2 from first principles to examine the temperature and doping concentration dependence and to elucidate the scattering mechanisms that limit transport. We include both electron–phonon scattering and electron-ionized impurity scattering to accurately model scattering in a doped semiconductor. Furthermore, we find a strongly anisotropic mobility that favors transport in the direction parallel to the c-axis. At room temperature and intrinsic carrier concentrations, the low-energy polar-optical phonon modes dominate scattering, while ionized-impurity scattering dominates above 10 18 cm −3 .
Dc photoconductivity characteristics of HgI2 single crystals have been measured in the range of 1.75-2.75 eV, using CuI as a transparent electrical contact. Hole and electron photocurrents could be separately measured by applying different voltage polarities to the illuminated electrode. It is shown that charge carrier generation near the surface is highly extrinsic, as displayed by differences in the hole and electron photogeneration spectra. Analysis of the photoconductivity versus voltage characteristics indicates that the hole and electron bulk trapping times satisfy greater than 70 and 3 microsec, respectively. The hole and electron surface recombination velocities were 1.0 x 10 to the 4th cm/s and 8 x 10 to the 5th cm/s, respectively.
Experimental polyimides relatively rigid synthesized in effort to exploit some of advantages of rodlike polymers, while alleviating disadvantages. Polymers used to make colorless fibers and transparent films for optical and electronic application.
Carbon-based ion optics have the potential to significantly increase the operable life and power ranges of ion thrusters because of reduced erosion rates compared to molybdenum optics. The development of 15-cm and larger diameter grids has encountered many problems, however, not the least of which is the ability to pass vibration testing. JPL has recently developed a new generation of 30-cm carbon-carbon ion optics in order to address these problems and demonstrate the viability of the technology. Perveance, electron backstreaming, and screen grid transparency data are presented for two sets of optics. Vibration testing was successfully performed on two different sets of ion optics with no damage and the results of those tests are compared to models of grid vibrational behavior. It will be shown that the vibration model is a conservative predictor of grid response and can accurately describe test results. There was no change in grid alignment as a result of vibration testing and a slight improvement, if any change at all, in optics performance.
An ultra-intense laser pulse interacting with a solid target can heat electrons to relativistic energies, driving the plasma to transparency before it expands into the classically underdense regime. This effect, called relativistic transparency (RT), has wide ranging significance across many lines of inquiry in relativistic laser–plasma interactions. Here, we show the temporal evolution of the relativistically induced transparency of a laser heated target as measured by a lower intensity probe beam, providing the first time-resolved measurement of the return to opacity in a target undergoing RT. We also measure a shift in the ellipticity angle of the probe polarization by up to 7.8°. Supporting 3D particle-in-cell simulations corroborate these measurements.
The results of performance tests with two titanium optics sets are presented and compared to those of molybdenum optics. All tests were conducted on a 30 cm ion thruster that was nearly identical to the NASA Solar Electric Propulsion Technology Application Readiness (NSTAR) thruster design. Optics performance tests were conducted over a thruster input power range of 0.5 to 4.6 kW. Optics performance including impingement-limited total voltages, electron backstreaming limits, screen grid ion transparencies, near-field beam current density profiles, beam divergence angles, and beam divergence thrust correction factors were determined throughout this power range. The impingement-limited total voltages for titanium optics were within 10 to 55 V of those for molybdenum optics. Electron backstreaming limit magnitude as a function of peak beam current density for both molybdenum and titanium optics were within a few volts of each other, indicating similar hot grid gaps for these two grid materials during steady-state operation. Beam divergence half-angles at 90 percent of the total beam current and thrust correction factors for both titanium optics sets were within one degree and one percent, respectively, of those for molybdenum optics. When thruster power was increased to 2.3 kW immediately following discharge ignition, the titanium screen grid came into contact with the accelerator grid within five minutes of ignition. Relative to molybdenum, titanium's larger thermal expansion and smaller thermal conductivity likely caused the screen grid to thermally expand more relative to the accelerator grid during startup.
Exploration and advancements in ultrawide bandgap (UWBG) semiconductors are pivotal for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics. Here, we used a thin heterostructure design to facilitate high conductivity due to the low electron mass and relatively weak electron-phonon coupling, while the atomically thin films ensured high transparency. We used a heterostructure comprising SrSnO 3 /La:SrSnO 3 /GdScO 3 (110), and applied electrostatic gating, which allow us to effectively separate charge carriers in SrSnO 3 from dopants and achieve phonon-limited transport behavior in strain-stabilized tetragonal SrSnO 3 . This led to a modulation of carrier density from 10 18 to 10 20 cm −3 , with room temperature mobilities ranging from 40 to 140 cm 2 V −1 s −1 . The phonon-limited mobility, calculated from first principles, closely matched experimental results, suggesting that room temperature mobility could be further increased with higher electron density. In addition, the sample exhibited 85% optical transparency at a 300-nm wavelength. These findings highlight the potential of heterostructure design for transparent UWBG semiconductor applications, especially in DUV regime.
GYGAG(Ce) transparent ceramic garnet scintillators were irradiated with electrons from 0.5 to 2 MeV with fluences from 10 16 e – /cm 2 to 10 19 e – /cm 2 , corresponding to doses from 0.3 to 310 Gigarad. Absorption spectra were measured before and after irradiations. Light yields from alpha, beta, and gamma excitations were measured before and after irradiation and compared to preirradiation values to gain a deeper understanding of how electron irradiations can affect light yield, as well as defects generated in both the surface and bulk. Within experimental error, no degradation in light yield was observed for the electron-irradiated samples, as measured via beta or gamma excitation, with minimal degradation observed via alpha excitation. A small increase in optical absorption near the wavelength of emission was observed following the largest dose irradiation. These results suggest that GYGAG(Ce) is radiation hard to electron irradiation up to 10 19 e – /cm 2 and doses up to 310 Gigarad. Furthermore, this robustness to irradiation indicates that transparent ceramic garnets may prove useful for applications such as scintillation-based nuclear batteries by allowing for higher energy beta emitters, increased power densities, and enabling long service lifetimes.
The results of performance tests with two 40 cm ion optics sets are presented and compared to those of 30 cm ion optics with similar aperture geometries. The 40 cm ion optics utilized both NSTAR and TAG (Thick-Accelerator-Grid) aperture geometries. All 40 cm ion optics tests were conducted on a NEXT (NASA's Evolutionary Xenon Thruster) laboratory model ion engine. Ion optics performance tests were conducted over a beam current range of 1.20 to 3.52 A and an engine input power range of 1.1 to 6.9 kW. Measured ion optics' performance parameters included near-field radial beam current density profiles, impingement-limited total voltages, electron backstreaming limits, screen grid ion transparencies, beam divergence angles, and start-up transients. Impingement-limited total voltages for 40 cm ion optics with the NSTAR aperture geometry were 60 to 90 V lower than those with the TAG aperture geometry. This difference was speculated to be due to an incomplete burn-in of the TAG ion optics. Electron backstreaming limits for the 40 cm ion optics with the TAG aperture geometry were 8 to 19 V higher than those with the NSTAR aperture geometry due to the thicker accelerator grid of the TAG geometry. Because the NEXT ion engine provided beam flatness parameters that were 40 to 63 percent higher than those of the NSTAR ion engine, the 40 cm ion optics outperformed the 30 cm ion optics.
An optical detector system includes an electrically resistive screen that is substantially transparent to radiation energy having a wavelength of interest. An electron transfer element (e.g., a low work function photoactive material or a carbon nanotube (CNT)-based element) has a first end and a second end with its first end spaced apart from the screen by an evacuated gap. When radiation energy passes through the screen with a bias voltage being applied thereto, transfer of electrons through the electron transfer element is induced from its first to its second end such that a quantity indicative of the electrons transferred can be detected.
Abstract Focused ion beam (FIB) is frequently used to prepare electron- and X-ray-beam-transparent thin sections of samples, called lamellae. Typically, lamellae are prepared from only a subregion of a sample. In this paper, we present a novel approach for FIB lamella preparation of microscopic samples, wherein the entire cross-section of the whole sample can be investigated. The approach was demonstrated using spherical, porous, and often hollow microprecipitates of biologically precipitated calcium carbonate. The microprecipitate morphology made these biogenic samples more fragile and challenging than materials commonly investigated using FIB lamellae. Our method enables the appropriate orientation of the lamellae required for further electron/X-ray analyses after attachment to the transmission electron microscopy (TEM) grid post and facilitates more secure adhesion onto the grid post. We present evidence of autofluorescence in bacterially precipitated vaterite using this lamella preparation method coupled with TEM selected area diffraction. This innovative approach allows studying biomineralization at the micro to nano scales, which can provide novel insights into bacterial responses to microenvironmental conditions.
Remote epitaxy is the synthesis of a single crystalline film on a graphene-covered substrate, where the film adopts epitaxial registry to the substrate as if the graphene is transparent. Despite many exciting applications for flexible electronics, strain engineering, and heterogeneous integration, an understanding of the fundamental synthesis mechanisms remains elusive. Here we offer a perspective on the synthesis mechanisms, focusing on the foundational assumption of graphene transparency. We identify challenges for quantifying the strength of the remote substrate potential that permeates through graphene, and propose Fourier and beating analysis as a bias-free method for decomposing the lattice potential contributions from the substrate, from graphene, and from surface reconstructions, each at different frequencies. We highlight the importance of graphene-induced reconstructions on epitaxial templating, drawing comparison to moiré epitaxy. We highlight the role of the remote potential in tuning surface diffusion and adatom kinetics on graphene, which are crucial for navigating the competition between remote epitaxy and defect-seeded mechanisms like pinhole epitaxy. In light of this weak remote potential, we re-evaluate the current state-of-the-art experimental evidence, highlighting why it remains challenging to experimentally validate a ‘remote’ epitaxy mechanism that cannot be explained by alternatives, such as pinhole-seeded epitaxy or serial van der Waals epitaxy. We end with one experimental example that, to out knowledge, cannot be explained by competing mechanisms: a different long-range epitaxial relationship for GdPtSb films grown on graphene/sapphire, compared to direct epitaxy on sapphire. We suggest for future experiments that directly measure the remote potential and impact of tuneable growth kinetics.
A waveguide laser oscillator was designed and experimental measurements made of relationships among output power, pressure, pump power, pump frequency, cavity tuning, output beam pattern, and cavity mirror properties for various active gases. A waveguide regenerative amplifier was designed and gain measurements were made for various active gases. An external Fabry-Perot interferometer was fabricated and used for accurate wavelength determination and for measurements of the refractive indices of solids transparent in the far infrared. An electronic system was designed and constructed to provide an appropriate error signal for use in feedback control of pump frequency. Pump feedback from the FIR laser was decoupled using a vibrating mirror to phase modulate the pump signal.
A heterojunction or Schottky barrier photovoltaic device comprising a conductive base metal layer compatible with and coating predominately the exposed surface of the p-type substrate of the device such that a back surface field region is formed at the interface between the device and the base metal layer, a transparent, conductive mixed metal oxide layer in integral contact with the n-type layer of the heterojunction or Schottky barrier device having a metal alloy grid network of the same metal elements of the oxide constituents of the mixed metal oxide layer embedded in the mixed metal oxide layer, an insulating layer which prevents electrical contact between the conductive metal base layer and the transparent, conductive metal oxide layer, and a metal contact means covering the insulating layer and in intimate contact with the metal grid network embedded in the transparent, conductive oxide layer for conducting electrons generated by the photovoltaic process from the device.
A decomposition of the molecular energy is presented that is motivated by the atom superposition and electron delocalization physical model of chemical binding. The energy appears in physically transparent form consisting of a classical electrostatic interaction, a zero order two electron exchange interaction, a relaxation energy, and the atomic energies. Detailed formulae are derived in zero and first order of approximation. The formulation extends beyond first order to any chosen level of approximation leading, in principle, to the exact energy. The structure of this energy decomposition lends itself to the fullest utilization of the solutions to the atomic sub problems to simplify the calculation of the molecular energy. If nonlinear relaxation effects remain minor, the molecular energy calculation requires at most the calculation of two center, two electron integrals. This scheme thus affords the prospects of substantially reducing the computational effort required for the calculation of molecular energies.