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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Identity of the reversible hole traps in InP/ZnSe core/shell quantum dots

Density functional theory calculations are combined with time-resolved photoluminescence experiments to identify the species responsible for reversible trapping of holes following photoexcitation of InP/ZnSe/ZnS core/shell/shell quantum dots (QDs) having excess indium in the shell. Several possible assignments are considered, and a substitutional indium adjacent to a zinc vacancy, In 3+ /V Zn 2- , is found to be the most likely. This assignment is consistent with the observation that trapping occurs only when the QD has excess indium and is supported by experiments showing that the addition of zinc oleate or acetate decreases the extent of trapping, presumably by filling some of the vacancy traps. We also show that addition of alkyl carboxylic acids causes increased trapping, presumably by creation of additional zinc vacancies. The calculations show that either a single In 2+ ion or an In 2+ -In 3+ dimer is much too easily oxidized to form the reversible traps observed experimentally, while In 3+ is far too difficult to oxidize. Additional experimental data on InP/ZnSe/ZnS QDs synthesized in the absence of chloride demonstrates that the reversible traps are not associated with Cl - . Furthermore, a zinc vacancy adjacent to a substitutional indium is calculated to have its highest occupied orbitals about 1 eV above the top of the valence band of bulk ZnSe, in the appropriate energy range to act as reversible traps for quantum confined holes in the InP valence band. The associated orbitals are predominantly composed of p orbitals on the Se atoms adjacent to the Zn vacancy.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Laboratory Calibrations of Fe xii–xiv Line-Intensity Ratios for Electron Density Diagnostics

In this work, we have used an electron beam ion trap to measure electron-density-diagnostic line-intensity ratios for extreme ultraviolet lines from Fe xii, xiii, and xiv at wavelengths of ≈185–205 and 255–276 Å. These ratios can be used as density diagnostics for astrophysical spectra and are especially relevant to solar physics. We found that density diagnostics using the Fe xiii 196.53/202.04 and the Fe xiv 264.79/274.21 and 270.52A/274.21 line ratios are reliable using the atomic data calculated with the Flexible Atomic Code (FAC). On the other hand, we found a large discrepancy between the FAC theory and experiment for the commonly used Fe xii (186.85 + 186.88)/195.12 line ratio. These FAC theory calculations give results similar to the data tabulated in CHIANTI, which are commonly used to analyze solar observations. Our results suggest that the discrepancies seen between solar coronal density measurements using the Fe xii (186.85 + 186.88)/195.12 and Fe xiii 196.54/202.04 line ratios are likely due to issues with the atomic calculations for Fe xii.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2021

Trapping interlayer excitons in van der Waals heterostructures by potential arrays

Transition metal dichalcogenide heterostructures can host interlayer excitons (IXs), which consist of electrons and holes spatially separated in different layers. IXs possess permanent dipoles and have proven to offer a wealth of novel physics. Here we develop a discrete, random-walk model which includes annihilation and repulsion interactions among IXs. Using this model, we simulate the trapping of IXs in traps of different depths, densities, and shapes. Our results show that dipole-dipole interactions play an important role in regulating IX trapping. The effects of dipole interactions can be mitigated with small, deep traps which are realizable with atomic defects and moire potentials.

2-dimensional systems↗
DOE OSTI2022

Hydrogen trapping energetics at BCC iron-helium interfaces

Density functional theory (DFT) calculations have been performed to assess the trapping and segregation strength of hydrogen (H) to helium (He) interfaces in BCC (Fe) as a function of He density and surface orientation. The He density ranges from 0 to 2 He/V which corresponds to equilibrium bubbles that are expected to form in the structural components in a fusion reactor environment. The DFT calculations consist of a slab of BCC metal and an initial lattice of FCC He. Here, the report on the binding energy of H to these interfaces as well as the migration barriers into and away from the surface, which together provide information on the de-trapping energy for H at He bubbles. It was found that the binding energy of H to He-Fe interfaces decreases with increasing He density. Migration barriers are also modified due to the He density, which are sensitive to the surface orientation as well as the diffusion pathway. These results provide valuable first-principles energetics that are necessary for higher-order, mesoscale models, and provide insight into the extent to which He bubbles may trap tritium in fusion structural materials.

42 ENGINEERING↗
DOE OSTI2024

Trap Passivation for Reducing On-Resistance and Saturation Voltage in Wafer-Bonded InGaAs-Channel/GaN-Drain Vertical FETs

High frequency and high power are the driving forces behind semiconductor transistor technology. However, conventional devices have the tradeoff of either being high speed or high breakdown—but not both. Wafer-bonded current aperture vertical electron transistors (BAVETs) help eliminate the tradeoff by combining a high-speed III-As channel to a high-breakdown III-N drift region. The device presented herein comprises of an InAlAs gate-barrier/InGaAs channel, wafer-bonded to an InGaN/GaN drift region, with the InGaAs/InGaN interface referred to as the wafer-bonded interface (WBI). The electronic behavior of WBIs is yet less known but necessary in realizing the potential of a BAVET. Herein, strong trap activity at the WBI is shown to be the cause of abnormally high saturation voltage ( V DS_SAT ) in BAVETs. The traps cause unintentional space charge (SC) region in the drain region of the device. This causes a drain resistance, a higher ON-resistance ( R ON ), and a higher V DS_SAT . Here, the challenge is overcome by hydrogen passivation of traps at WBI by using a p-doping for the InAlAs layer, which reduces the trap-charge concentration at the WBI. Consequently, the width of the SC region is reduced and a reduction in V DS_SAT is demonstrated, wherein it reduces from >12 to 5 V.

36 MATERIALS SCIENCE↗
DOE OSTI2025

The phase diagram of quantum chromodynamics in one dimension on a quantum computer

The quantum chromodynamics (QCD) phase diagram, which reveals the state of strongly interacting matter at different temperatures and densities, is key to answering open questions in physics, ranging from the behaviour of particles in neutron stars to the conditions of the early universe. However, classical simulations of QCD face significant computational barriers, such as the sign problem at finite matter densities. Quantum computing offers a promising solution to overcome these challenges. Here, we take an important step toward exploring the QCD phase diagram with quantum devices by preparing thermal states in one-dimensional non-Abelian gauge theories. We experimentally simulate the thermal states of SU(2) and SU(3) gauge theories at finite densities on a trapped-ion quantum computer using a variational method. This is achieved by introducing two features: Firstly, we add motional ancillae to the existing qubit register to efficiently prepare thermal probability distributions. Secondly, we introduce charge-singlet measurements to enforce colour-neutrality constraints. This work pioneers the quantum simulation of QCD at finite density and temperature for two and three colours, laying the foundation to explore QCD phenomena on quantum platforms.

Quantum information↗
DOE OSTI2025

Achieving Multimodal and Multicolor Luminescence in LaAlO 3 :Pr 3+ , Gd 3+ via Trap Engineering and Energy Transfer

Achieving multimodal luminescence within a single phosphor is vital for multifunctional applications but remains challenging due to complex color tuning and trap engineering. In this study, we report Pr 3+ and Gd 3+ co‐doped LaAlO 3 (LAO:PG) phosphors, designed through careful modulation of multilevel traps and Pr 3+ → Gd 3+ energy transfer dynamics. These materials exhibit diverse luminescence modes, including down‐conversion luminescence (DCL), up‐conversion luminescence (UCL), persistent luminescence (PersL), optically stimulated luminescence (OSL), and thermally stimulated luminescence (TSL) across a wide spectral range. Unlike previously studied Pr 3+ ‐doped LAO, the co‐doped LAO:PG shows DCL in both UV‐visible and NIR regions and displays ultraviolet‐C UCL under visible excitation. Notably, we observe, for the first time, PersL lasting several minutes in these phosphors—an improvement over the non‐PersL behavior of Pr 3+ ‐only doped LAO. Additionally, the LAO:PG phosphors exhibit strong OSL response. TSL analysis reveals five distinct trap levels linked to these properties. Density functional theory calculations further correlate intrinsic defects to these traps, supporting a proposed mechanism for the observed multimodal luminescence. These findings highlight LAO:PG as a promising platform for developing advanced phosphors with integrated luminescence modes, paving the way for future applications in data storage, phototherapy, and anti‐counterfeiting technologies.

Chemistry↗
DOE OSTI2022

High-performance organic photodetectors enabled by a refined fibrillar multiphase morphology

Film morphology of donor:acceptor blend layers plays a critical role in photon-to-current efficiency and dark/noise current of organic photodetectors (OPDs). One effective approach to manipulate crystallization and mesoscale phase separation of such blend layers is sequential casting (SC). However, the guiding strategies to control the morphology and the impacts on OPD performance of the SC films remain elusive, as the film structural evolution during SC is different from conventional blend casting (BC). In this report a refined fibrillar multiphase morphology is demonstrated by SC in an NT812:IEICO-4F blend film, where the high-quality IEICO-4F crystallites infiltrate the robust NT812 fibril network from the surface to the bulk. Such a morphology leads to improved charge generation and collection, reduced trap states, and enhanced charge block capability of resultant device, enabling simultaneous achievement of high external quantum efficiency and low dark/noise current. A maximum special detectivity of 5 × 10 13 Jones is achieved at 860 nm under –0.1 V, which is among the highest detectivities for vis-to-NIR OPDs. The linear dynamic range and response speed are also improved. Such enhancements are parallelly observed from OPD devices based on other blend systems with similar fibrillar refinement, which provides guidelines for film structure manipulation towards high OPD performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Quantification of Shallow Defect Suppression in Aminosilane-Passivated Lead Halide Perovskites via Optical and Electrochemical Methods

We combine fluence-dependent photoluminescence (PL) and electrochemical characterization to estimate defect-dependent trapping rates, energetic distributions, and densities of defects, in lead halide perovskite films Cs 0.1 FA 0.9 PbI 3 and Cs 0.17 FA 0.83 Pb­(I 0.75 Br 0.25 ) 3 , before and after trap passivation with vapor-deposited (3-aminopropyl)­trimethoxysilane (APTMS). For both compositions, the PL studies show that energetically shallow subgap near-valence defect densities lead to bimolecular nonradiative recombination which is reduced by 92% after APTMS treatment. Electrochemical characterization of these same active layers shows for the first time that APTMS passivation impacts mainly on near-valence (mobile anionic) defects that decrease in density by 4 orders of magnitude, from 10 18 cm –3 to 10 14 cm –3 , as a result of silane modification. Here, the combination of PL and electrochemical characterization promises a unique approach to speciation and quantification of a broader distribution of trap states in perovskites and provides straightforward assessments of the efficacy of defect mitigation strategies.

Defects↗
DOE OSTI2023

Microstructure and defect engineering of graphite anodes by pulsed laser annealing for enhanced performance of lithium-ion batteries

We report nanosecond pulsed laser annealing significantly improves cyclability and current carrying capacity of lithium-ion batteries (LIBs). This improvement is achieved by engineering of microstructure and defect contents present in graphite in a controlled way by using pulsed laser annealing (PLA) to increase the number density of Li + ion trapping sites. The PLA treatment causes the following changes: (1) creates surface steps and grooves between the grains to improve Li + ion charging and intercalation rates; (2) removes inactive polyvinylidene difluoride (PVDF) binder from the top of graphite grains and between the grains which otherwise tends to block the Li + migration; and (3) produces carbon vacancies in (0001) planes which can provide Li + charging sites. From X-ray diffraction data, we find upshift in diffraction peak or reduction in planar spacing, from which vacancy concentration was estimated to be about 1.0%, which is higher than the thermodynamic equilibrium concentration of vacancies. The laser treatment creates single and multiple C vacancies which provide sites for Li + ions, and it also produces steps and grooves for Li + ions to enter the intercalating sites. It is envisaged that the formation of these sites enhances Li+ ion absorption during charge and discharge cycles. The current capacity increases from an average 360 mAh/g to 430 mAh/g, and C–V shows significant reduction in SEI layer formation after the laser treatment. If the vacancy concentration is too high and charge-discharge cycles are long, then trapping of electrons by Li + may occur, which can lead to Li 0 formation and Li plating causing reduction in current capacity.

25 ENERGY STORAGE↗
DOE OSTI2020

Sub-micrometer random-pyramid texturing of silicon solar wafers with excellent surface passivation and low reflectance

Select emerging solar cell technologies, ranging from very narrow screen-printed fingers to perovskite/silicon tandems, would benefit from a reduction of the height of the standard pyramidal texture of monocrystalline silicon wafers to below 1 μm. However, fabricating such small surface features usually compromises the requisite low reflectance and high passivation quality. Through systematic design of experiments, we demonstrate that conventional alkaline-based wet-chemical etching processes can be tuned to produce dense, spatially homogeneous, and uniformly sized sub-micrometer pyramids. Precise texture size can be further controlled by adding potassium silicate to the texturing solution to effectively slow the pyramid growth rate and promote nucleation. With pyramid size distribution data—extracted from multiple atomic force microscopy images across each wafer—we demonstrate 16 nanotextures with average pyramid sizes ranging from 62 to 512 nm, with the largest having only 0.3% of its pyramids taller than 1 μm. Six of the nanotextures exhibit light trapping and surface defect densities comparable to state-of-the-art microtextured wafers. In conclusion, the best nanotexture achieved an AM1.5G-weighted reflectance of 11.8% and a minority-carrier lifetime of 3.4 ms after passivation with amorphous silicon, demonstrating that smaller textures need not deteriorate solar cell performance.

14 SOLAR ENERGY↗
DOE OSTI2023

Theory and Simulation of Metal–Insulator–Semiconductor (MIS) Photoelectrodes

A metal–insulator–semiconductor (MIS) structure is an attractive photoelectrode-catalyst architecture for promoting photoelectrochemical reactions, such as the formation of H 2 by proton reduction. The metal catalyzes the generation of H 2 using electrons generated by photon absorption and charge separation in the semiconductor. The insulator layer between the metal and the semiconductor protects the latter element from photo-corrosion and, also, significantly impacts the photovoltage at the metal surface. Understanding how the insulator layer determines the photovoltage and what properties lead to high photovoltages is critical to the development of MIS structures for solar-to-chemical energy conversion. Herein, we present a continuum model for charge-carrier transport from the semiconductor to the metal with an emphasis on mechanisms of charge transport across the insulator. The polarization curves and photovoltages predicted by this model for a Pt/HfO 2 /p-Si MIS structure at different HfO 2 thicknesses agree well with experimentally measured data. The simulations reveal how insulator properties (i.e., thickness and band structure) affect band bending near the semiconductor/insulator interface and how tuning them can lead to operation closer to the maximally attainable photovoltage, the flat-band potential. This phenomenon is understood by considering the change in tunneling resistance with insulator properties. The model shows that the best MIS performance is attained with highly symmetric semiconductor/insulator band offsets (e.g., BeO, MgO, SiO 2 , HfO 2 , or ZrO 2 deposited on Si) and a low to moderate insulator thickness (e.g., between 0.8 and 1.5 nm). Beyond 1.5 nm, the density of filled interfacial trap sites is high and significantly limits the photovoltage and the solar-to-chemical conversion rate. These conclusions are true for photocathodes and photoanodes. This understanding provides critical insight into the phenomena enhancing and limiting photoelectrode performance and how this phenomenon is influenced by insulator properties. The study gives guidance toward the development of next-generation insulators for MIS structures that achieve high performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Molecular bond stabilization in the strong-field dissociation of O 2 +

We theoretically examine the rotational and vibrational dynamics of O 2 + molecular ions exposed to intense, short laser pulses for conditions realized in contemporary pump-probe experiments. We solve the time-dependent Schrödinger equation within the Born-Oppenheimer approximation for an initial distribution of randomly aligned molecular ions. For fixed peak intensities, our numerical results show that total, angle-integrated O 2 + → O( 3 P) + O + ( 4 S 0 ) dissociation yields do not monotonically increase with increasing infrared-probe pulse duration. We find this pulse-duration-dependent stabilization to be consistent with the transient trapping of nuclear probability density in a light-induced (bond-hardening) potential-energy surface and robust against rotational excitation. We analyze this stabilization effect and its underlying bond-hardening mechanism (i) in the time domain, by following the evolution of partial nuclear probability densities associated with the dipole-coupled O 2 + (a 4 Π u ) and O 2 + (f 4 Π g ) cationic states, and (ii) in the frequency domain, by examining rovibrational quantum-beat spectra for the evolution of the partial nuclear probability densities associated with these states. In this work, our analysis reveals the characteristic timescale for the bond-hardening mechanism in O 2 + and explains the onset of bond stabilization for sufficiently long pulse durations.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2020

Imaging of Calibrated Defects in Additively Manufactured Materials: Pulsed Thermal Tomography Nondestructive Examination of Additively Manufactured Reactor Materials and Components

Additive manufacturing (AM, or 3D printing) for commercial nuclear energy applications is an emerging method for cost-efficient manufacturing aimed at replacing aging nuclear reactor parts and reducing costs for new construction. Known material flaws in AM include low-density regions consisting of non-sintered powder, which have to be detected to ensure the safety of long-term performance nuclear reactor components. Currently, limited options are available for nondestructive evaluation (NDE), either during or post manufacturing. As a solution to NDE of AM, we are developing pulsed thermal imaging which is non-contact, one-sided, and scalable to arbitrary size and shape of the AM parts. Pulsed thermography (PT) system utilizes a high intensity flash lamp to rapidly heat surface of sample, and a high sensitivity fast-frame megapixel infrared (IR) camera to capture data of surface temperature variations. The acquired data cube consists of a stack of surface temperature images taken at different times. Information about material internal defects is extracted by analyzing the data cube. This report provides results of preliminary performance evaluation of pulsed thermal imaging capability in detection of imprinted flaws in AM metallic structures. The flaws were introduced into AM parts as imprinted hemispherical low density regions, consisting of trapped un-sintered metallic powder. Specimens for developed for this study consisted of AM stainless steel 316 and Inconel 718 plates. The diameters of imprinted defects varied from 1mm to 8mm, and their depths below the plate flat surface varied between 1mm and 6mm. Pulsed thermal tomography (PTT) processes the measured data cube to obtain 3D reconstructions of material effusivity using a unique inversion algorithm developed at Argonne. PTT has been previously used in imaging of similar size flat bottom hole (FBH) simulated defects in stainless steel 316 and Inconel 718 specimens. In the study involving AM specimens, PTT imaging results have shown that 1mm-diameter defects located 1mm and 2mm below the surface of specimens were detectable. Larger size defects were detectable at greater depth. We also explored an alternative approach to detection of material flaws in PT data cube, which is using neural learning-based approach to blind source separation. Detection of small material defects requires finding features in the data cube which have signal contrast levels approaching sensitivity limit of IR camera. In this study, an optimized Neural Learning based Blind Source Separation (NLBSS) algorithm, including Principal Component Analysis (PCA), and Independent Component Analysis (ICA) is demonstrated to automatically extract principal temporal and spatial features of thermography frames to enhance flaw detection. By using the NLBSS algorithm, material internal defects can be automatically detected. Furthermore, this processing approach compensates for experimental thermal imaging artifacts, such as noise and uneven heating. By merging artificial intelligence with phtotothermics, the NDE system detects internal calibrated defects of various sizes and depths in AM nuclear-grade metallic alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Variable Effects of Dispersed Nanoparticles on Triboelectric Nanogenerators

Technology has recently seen a drastic physical downsizing. Wearable and small devices with lower power demands have become the norm and continue to be more prominent in daily life. With modern devices growing smaller and requiring less electricity, a power source will always be needed. Contemporary batteries are the most common means to power small electronics. However, reliance on conventional batteries may prove insufficient due to the non renewable resources (Li, Ni, Co) required to power the growing number of individual devices each person may own. Additionally, the infrastructure required to harvest and recycle the sheer number of batteries produced presents a further logistic issue to be addressed. A promising alternative to batteries is the usage of triboelectric nanogenerators (TENGs). TENGs are a class of energy harvesting devices that utilize triboelectric generation to convert mechanical/kinetic energy into electrical energy and have exhibited efficiencies up to 85 % at low frequencies. TENGs exhibit a high voltage but low current. Even with the high voltage, the low current output proves to be a significant factor preventing undoped TENGs from being commercially viable. This review will investigate factors that increase the total current produced by TENGs when nanoparticles are utilized in TENGs. Factors such as increasing porosity, surface area, surface charge density, charge storage, deep trap formation, and dielectric constant can be altered to affect the total current by impregnating nanoparticles into the polymer material will be explored.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Variable Effects of Dispersed Nanoparticles on Triboelectric Nanogenerators

Technology has recently seen a drastic physical downsizing. Wearable and small devices with lower power demands have become the norm and continue to be more prominent in daily life. With modern devices growing smaller and requiring less electricity, a power source will always be needed. Contemporary batteries are the most common means to power small electronics. However, reliance on conventional batteries may prove insufficient due to the non renewable resources (Li, Ni, Co) required to power the growing number of individual devices each person may own. Additionally, the infrastructure required to harvest and recycle the sheer number of batteries produced presents a further logistic issue to be addressed. A promising alternative to batteries is the usage of triboelectric nanogenerators (TENGs). TENGs are a class of energy harvesting devices that utilize triboelectric generation to convert mechanical/kinetic energy into electrical energy and have exhibited efficiencies up to 85 % at low frequencies. TENGs exhibit a high voltage but low current. Even with the high voltage, the low current output proves to be a significant factor preventing undoped TENGs from being commercially viable. This review will investigate factors that increase the total current produced by TENGs when nanoparticles are utilized in TENGs. Factors such as increasing porosity, surface area, surface charge density, charge storage, deep trap formation, and dielectric constant can be altered to affect the total current by impregnating nanoparticles into the polymer material will be explored.

42 ENGINEERING↗
DOE OSTI2023

Assessing whole-sounder removal versus traditional control for reducing invasive wild pig ( Sus scrofa ) populations

Trapping is commonly used as the primary management tool in attempts to reduce invasive wild pigs (Sus scrofa), but traditional trapping techniques are often ineffective. However, recently developed traps permit the capture of entire social groups (sounders) of wild pigs, and the strategy of whole-sounder removal may achieve more effective control. Our objective was to experimentally compare traditional control (TC; primarily traditional trapping, but including hunting with dogs, and opportunistic shooting) and whole-sounder removal (WSR) strategies by assessing density reduction and removal rate after 1 and 2 years of treatment. After 1 year of trapping, average wild pig density on WSR units declined 53% and remained stable after the second year, whereas on TC units, pig density did not differ after trapping, although it declined 33% and remained stable after the second year of trapping. The median removal rate (percentage of uniquely marked pigs present at the beginning of each year that were removed) was 42.5% for WSR units and 0.0% for TC units during 2018 and were 29.6% from WSR units and 5.3% from TC units during 2019. WSR removal was more effective at reducing wild pig density than TC, but factors such as previous exposure of this population to traditional traps and the lack of barriers to recolonization from surrounding areas may have reduced WSR efficacy. WSR can effectively reduce wild pig density to a greater extent than TC, but managers should recognize the additional time and expense necessary for implementation.

Sus scrofa↗
DOE OSTI2026

Single-Particle Insights Into the Electronic Structure and Enhanced Stability of CsPbBr 3 /FAPbBr 3 Core/Crown Nanoplatelets at the Nanometer Scale

Colloidal perovskite nanoplatelets (NPLs), despite their exceptional optoelectronic properties, face significant challenges due to their intrinsic instability and trap-assisted non-radiative recombination. Although many studies employing surface engineering, such as selecting ligands or coating to passivate defects, have demonstrated improved optoelectronic properties, these enhancements are typically inferred from bulk-ensemble measurements; the effects at the single-particle level remain elusive. Here, we conduct single-particle-level studies using scanning tunneling spectroscopy (STS) on a unique core–crown system, CsPbBr 3 @FAPbBr 3 NPLs, where the lateral surfaces of the CsPbBr 3 core are coated with an FAPbBr 3 crown. Experimental density-of-states (DOS) analysis reveals a 47% reduction in deep-trap states in core-crown NPLs compared to core-only NPLs, consistent with nearly two-fold enhancements in photoluminescence quantum yields. Progressive I–V sweep measurements demonstrate superior electrical stability in core-crown NPLs, preserving band structure with minimal degradation, while core-only NPLs exhibit rapid bandgap shrinkage and trap formation. Density functional theory (DFT) calculations indicate that FA incorporation distorts Pb octahedral lattice, widening the bandgap. This study elucidates how surface engineering modulates charge localization, passivates defects, and enhances stability at the single-particle level. Moreover, by uncovering bias-induced trap states in single unpassivated NPLs, this study establishes a precise, robust approach for characterizing emerging perovskite nanocrystals.

77 NANOSCIENCE AND NANOTECHNOLOGY↗