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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Spreading resistance effects in tunneling spectroscopy of α–RuCl 3 and Ir 0.5 Ru 0.5 Cl 3

The Mott insulating state is the progenitor of many interesting quantum phases of matter including the famous high-temperature superconductors and quantum spin liquids. A recent candidate for novel spin liquid phenomena is α–RuCl 3 , a layered honeycomb Mott insulator whose electronic structure has been a source of mystery. In particular, scanning tunneling spectroscopy has indicated a Mott gap in α–RuCl 3 that is much lower than the 2-eV value observed in photoemission measurements. Here, we show that the origin of this discrepancy is a spreading resistance artifact associated with tunneling into highly resistive materials by comparing with prior experiments and numerical modeling. Furthermore, a similar phenomenon is also observed in a substitutional alloy, Ir 0.5 Ru 0.5 Cl 3 , that has a higher resistivity than the parent compound. While the tunneling measurements cannot be used to accurately measure the sample density of states for these materials, we can take advantage of the spreading resistance sensitivity to quantify the anisotropic resistivity of these layered materials and connect to previous macroscopic transport observations.

2-dimensional systems↗
DOE OSTI2021

Metamorphic Tunnel Junctions Grown Via MOCVD Designed for GaAs 0.75 P 0.25 /Si Tandem Solar Cells

A high-performance metamorphic Al 0.2 Ga 0.8 As 0.75 P 0.25 /GaAs 0.75 P 0.25 heterojunction tunnel junction structure was developed for application to monolithic epitaxial GaAs 0.75 P 0.25 /Si 1.7 eV/1.1 eV bandgap tandem solar cells produced via metal-organic chemical vapor deposition. Doping optimization focused on both bulk doping concentrations and mitigating the transient incorporation effects that otherwise causes non-abrupt doping profiles in the Te doped layer. Furthermore, these efforts resulted in a fully-relaxed metamorphic tunnel diode at the target lattice constant having a peak tunneling current density (JP) of 279.1 A·cm –2 and a zero-bias resistance area product (RA) of 3.0×10 –4 Ω·cm 2 . After post-growth annealing to emulate the thermal load of the GaAs 0.75 P 0.25 top cell growth and elimination of the performance enhancing carbon activation anneal, the device achieved JP = 13.1 A·cm –2 and RA = 1.5×10 –3 Ω·cm 2 . These worst-case values are very promising as they enable the operation of GaAs 0.75 P 0.25 /Si tandems under one-sun AM1.5G illumination with negligible series resistance and at AM1.5D concentrations up to 240 suns with only 0.1% absolute efficiency loss.

14 SOLAR ENERGY↗
DOE OSTI2021

Tunnel magnetoresistance detection of skyrmions (Final Scientific/Technical Report for Magnon Current Transmission Through Insulators)

Micromagnetic simulations are used to investigate different strategies for tunnel magnetoresistance detection of the Néel skyrmion core direction and Bloch skyrmion chirality. When a Néel skyrmion passes beneath a perpendicularly magnetized dot separated by a tunnel barrier, a peak or dip in the tunnel magnetoresistance as a function of time shows a peak followed by a dip, or vice versa, depending on the chirality. The results are compared with existing detection methods based on the Hall resistance.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

On the Possibility of Installing the Rapid Cycling Synchrotron of the Electron Ion Collider in the AGS Tunnel

This report describes electron injector concepts for the Electron Ion Collider (EIC) using the tunnel of the Alternating Gradient Synchrotron (AGS) of Brookhaven National Laboratory which is to be compared to the RCS in the RHIC tunnel or a new ring in a new tunnel. Possible designs of the electron booster synchrotron, the Rapid Cycling Synchrotron (RCS) with good spin transparency with electron energies of up to 10 GeV and 18 GeV and placing the injector linac in the adjacent Building 912 for are worked out. The main reason for studying such options is the expectation that it will reduce the Electron Ion Collider injector cost because no civil construction is required, the machine is very compact, and existing infrastructure can be used. The design of an RCS with a top energy of 10 GeV with good spin transparency is quite conventional. However, for collider operation with 18 GeV electrons, this option would require accelerating the 10 GeV beam in the Electron Storage Ring (ESR) to 18 GeV and relying on the Sokolov Ternov self-polarization at 18 GeV in the ESR. Solutions for an RCS with Electron energies of up to 18 GeV with or without spin transparency are found to be possible but push the envelope of conventional magnet technology.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

Competing Easy-Axis Anisotropies Impacting Magnetic Tunnel Junction-Based Molecular Spintronics Devices (MTJMSDs)

Molecular spintronics devices (MSDs) attempt to harness molecules’ quantum state, size, and configurable attributes for application in computer devices—a quest that began more than 70 years ago. In the vast number of theoretical studies and limited experimental attempts, MSDs have been found to be suitable for application in memory devices and futuristic quantum computers. MSDs have recently also exhibited intriguing spin photovoltaic-like phenomena, signaling their potential application in cost-effective and novel solar cell technologies. The molecular spintronics field’s major challenge is the lack of mass-fabrication methods producing robust magnetic molecule connections with magnetic electrodes of different anisotropies. Another main challenge is the limitations of conventional theoretical methods for understanding experimental results and designing new devices. Magnetic tunnel junction-based molecular spintronics devices (MTJMSDs) are designed by covalently connecting paramagnetic molecules across an insulating tunneling barrier. The insulating tunneling barrier serves as a mechanical spacer between two ferromagnetic (FM) electrodes of tailorable magnetic anisotropies to allow molecules to undergo many intriguing phenomena. Our experimental studies showed that the paramagnetic molecules could produce strong antiferromagnetic coupling between two FM electrodes, leading to a dramatic large-scale impact on the magnetic electrode itself. Recently, we showed that the Monte Carlo Simulation (MCS) was effective in providing plausible insights into the observation of unusual magnetic domains based on the role of single easy-axis magnetic anisotropy. Here, we experimentally show that the response of a paramagnetic molecule is dramatically different when connected to FM electrodes of different easy-axis anisotropies. Motivated by our experimental studies, here, we report on an MCS study investigating the impact of the simultaneous presence of two easy-axis anisotropies on MTJMSD equilibrium properties. In-plane easy-axis anisotropy produced multiple magnetic phases of opposite spins. The multiple magnetic phases vanished at higher thermal energy, but the MTJMSD still maintained a higher magnetic moment because of anisotropy. The out-of-plane easy-axis anisotropy caused a dominant magnetic phase in the FM electrode rather than multiple magnetic phases. The simultaneous application of equal-magnitude in-plane and out-of-plane easy-axis anisotropies on the same electrode negated the anisotropy effect. Our experimental and MCS study provides insights for designing and understanding new spintronics-based devices.

42 ENGINEERING↗
DOE OSTI2023

Electromagnetic Radiation Effects on MgO-Based Magnetic Tunnel Junctions: A Review

Magnetic tunnel junctions (MTJs) have been widely utilized in sensitive sensors, magnetic memory, and logic gates due to their tunneling magnetoresistance. Moreover, these MTJ devices have promising potential for renewable energy generation and storage. Compared with Si-based devices, MTJs are more tolerant to electromagnetic radiation. In this review, we summarize the functionalities of MgO-based MTJ devices under different electromagnetic irradiation environments, with a focus on gamma-ray radiation. We explore the effects of these radiation exposures on the MgO tunnel barriers, magnetic layers, and interfaces to understand the origin of their tolerance. This review enhances our knowledge of the radiation tolerance of MgO-based MTJs, improves the design of these MgO-based MTJ devices with better tolerances, and provides information to minimize the risks of irradiation under various irradiation environments. This review starts with an introduction to MTJs and irradiation backgrounds, followed by the fundamental properties of MTJ materials, such as the MgO barrier and magnetic layers. Then, we review and discuss the MTJ materials and devices’ radiation tolerances under different irradiation environments, including high-energy cosmic radiation, gamma-ray radiation, and lower-energy electromagnetic radiation (X-ray, UV–vis, infrared, microwave, and radiofrequency electromagnetic radiation). In conclusion, we summarize the radiation effects based on the published literature, which might benefit material design and protection.

42 ENGINEERING↗
DOE OSTI2024

Characterization of Tunnel Oxides in TOPCon Solar Cells

The 1.12 nm thickness for the tunnel oxide layer is near the optimal range described by Choi et al. This thickness should be effective at enabling quantum tunneling; however, it is slightly lower than the reported optimal range which could negatively impact the passivation of the poly-Si interface. An appropriate balance between the two functions must be met to optimize efficiency. Follow up work could focus on testing the optimal range for tunnel oxide thickness in TOPCon solar cells, as well as improving the manufacturing process to produce better control of film thickness. This work could be extended into more advanced TOPCon solar cells including double or triple stack structures, as well as experimental pinhole designs.

SOLAR ENERGY↗
DOE OSTI2023

In situ plasmonic tip preparation and validation techniques for scanning tunneling microscopy

Among the many parts constituting a scanning tunneling microscope, the metallic tip is the component that directly interacts with the specimen and plays a critical role in visualizing the physical quantity of interest. While tip materials such as W and Pt–Ir are commonly used for topographic imaging and their preparation is well-documented, the preparation of plasmonic materials such as Ag for tip-enhanced Raman spectroscopy is relatively less standardized. Furthermore, we present several in situ Ag tip preparation and validation techniques for the microscopist to use depending on their intended application, including atomic resolution imaging, scanning tunneling spectroscopy (STM), and tip-enhanced Raman spectro-microscopy in ultrahigh vacuum. Besides optical applications, these methods are not limited to Ag but also applicable to other STM tip materials.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Large Magnetoresistance in Scandium Nitride Magnetic Tunnel Junctions Using First Principles

Abstract The state‐of‐the‐art magnetic tunnel junction, a cornerstone of spintronic devices and circuits, uses a magnesium oxide tunnel barrier that provides a uniquely large tunnel magnetoresistance at room temperature. However, the wide bandgap and band alignment of magnesium oxide‐iron systems increases the resistance‐area product and creates variability and breakdown challenges. Here, the authors study using first principles narrower‐bandgap scandium nitride (ScN) transport properties in magnetoresistive junctions in comparison to magnesium oxide. The results show a high magnetoresistance in Fe/ScN/Fe via Δ 1 and symmetry filtering with low wave function decay rates, suggesting scandium nitride could be a new barrier material for spintronic devices.

Karki, Suyogya↗
DOE OSTI2021

Evaluation of several relevant fractionation processes as possible explanation for radioxenon isotopic activity ratios in samples taken near underground nuclear explosions in shafts and tunnels

Gas samples taken from two historic underground nuclear tests done in 1989 at the Nevada National Security Site (NNSS), formerly the Nevada Test Site (NTS), were examined to determine how xenon isotopes fractionate because of early-time cavity processes, transport through the rock, or dispersal through tunnels. Xenon isotopes are currently being used to distinguish civilian sources of xenon in the atmosphere from sources associated with underground nuclear explosions (UNEs). The two nuclear tests included (1) BARNWELL, a test conducted in a vertical shaft approximately 600 m below ground surface at Pahute Mesa, and (2) DISKO ELM, a horizontal line-of-sight test done in P-tunnel approximately 261 m below the surface of Aqueduct Mesa. Numerical flow and transport models developed for the two sites had mixed success when attempting to match the observed xenon isotope ratios. At the BARNWELL site, the simulated xenon isotope ratios were consistent with measurements from the chimney and ground surface and appeared to have been affected primarily by fractionation during subsurface transport. At the DISKO ELM site, samples taken from two elevations in the chimney failed to show the degree of fractionation predicted by the models during transport and did not show evidence for significant fractionation due to early-time condensation of refractory xenon-precursor radionuclides into the melt glass. Gas samples taken from the adjacent tunnels in the days following the test showed mixed evidence for early-time separation of xenon isotopes from their iodine precursors.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

The effects of vanadium substitution on one-dimensional tunnel structures of cryptomelane: Combined TEM and DFT study

Rational design of energy storage materials requires mechanistic understanding which relies on atomic scale characterization of structure and defects. In this paper we utilize vanadium (V)-substituted one-dimensional cryptomelane as a model material to study structural features critical to electrochemical reversibility of the cathode in lithium-ion batteries. We found the substitution of manganese (Mn) atoms in the tunnel wall with V enhances structural uniformity in the parent KMn 8 O 16 material by inhibiting formation of irregular (2 × 3 and 2 × 1) manganese oxide tunnel structures. Upon lithiation, both transmission electron microscopy (TEM) and density functional theory (DFT) reveal significant structural evolution, eventually resulting in phase separation and formation of highly reduced manganese oxide. During this process, Mn 4+ accepts electrons donated by intercalated Li, while the V 4+ substituent is not electrochemically reduced but acts to stabilize the tunnel framework structure. As a result, the V substituted material shows higher operating voltage and improved electrochemical reversibility. Our results highlight the benefits of V-substitution in cryptomelane, and the significance of integrating characterization with simulation for understanding and developing design principles for lithium ion battery materials.

25 ENERGY STORAGE↗
DOE OSTI2022

Application of recoil-imaging time projection chambers to directional neutron background measurements in the SuperKEKB accelerator tunnel

Gaseous time projection chambers (TPCs) with high readout segmentation are capable of reconstructing detailed 3D ionization distributions of nuclear recoils resulting from elastic neutron scattering. Here, using a system of six compact TPCs with pixel ASIC readout, filled with a 70:30 mixture of He:CO 2 gas, we analyze the first directional measurements of beam-induced neutron backgrounds in the tunnel regions surrounding the Belle II detector at the SuperKEKB e + e – collider. With the use of 3D recoil tracking, we show that these TPCs are capable of maintaining nearly 100% nuclear recoil purity to reconstructed ionization energies (E reco ) as low as 5 keV ee . Using a large sample of Monte-Carlo (MC)-simulated 4 He, 12 C, and 16 O recoil tracks, we find consistency between predicted and measured recoil energy spectra in five of the six TPCs, providing useful validation of the neutron production mechanisms modeled in simulation. Restricting this sample to 4 He recoil tracks with E reco > 40 keV ee , we further demonstrate axial angular resolutions within 8° and we introduce a procedure that under suitable conditions, correctly assigns the vector direction to 91% of these simulated 4 He recoils. Applying this procedure to assign vector directions to measured 4 He recoil tracks, we observe consistency between the angular distributions of observed and simulated recoils, providing first experimental evidence of localized neutron “hotspots” in the accelerator tunnel. Observed rates of nuclear recoils in these TPCs suggest that simulation overestimates the neutron flux from these hotspots. Despite this, we estimate these hotspots to produce the majority of neutron backgrounds in the accelerator tunnel at SuperKEKB’s target luminosity of 6.3 x 10 35 cm –2 s –1 , making them important regions to continue to monitor.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Cryo-EM Structure of the Mnx Protein Complex Reveals a Tunnel Framework for the Mechanism of Manganese Biomineralization

The global manganese cycle relies on microbes to oxidize soluble Mn(II) to insoluble Mn(IV) oxides. Some microbes require peroxide or superoxide as oxidants, but others can use O 2 directly, via multicopper oxidase (MCO) enzymes. One of these, MnxG from Bacillus sp. strain PL-12, was isolated in tight association with small accessory proteins, MnxE and MnxF. The protein complex, called Mnx, has eluded crystallization efforts, but we now report the 3D structure of a point mutant using cryo-EM single particle analysis, cross-linking mass spectrometry, and AlphaFold Multimer prediction. The ß-sheet–rich complex features MnxG enzyme, capped by a heterohexameric ring of alternating MnxE and MnxF subunits, and a tunnel that runs through MnxG and its MnxE 3 F 3 cap. The tunnel dimensions and charges can accommodate the mechanistically inferred binuclear manganese intermediates. Furthermore, comparison with the Fe(II)-oxidizing MCO, ceruloplasmin, identifies likely coordinating groups for the Mn(II) substrate, at the entrance to the tunnel. Thus, the 3D structure provides a rationale for the established manganese oxidase mechanism, and a platform for further experiments to elucidate mechanistic details of manganese biomineralization.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

High frequency atomic tunneling yields ultralow and glass-like thermal conductivity in chalcogenide single crystals

Crystalline solids exhibiting glass-like thermal conductivity have attracted substantial attention both for fundamental interest and applications such as thermoelectrics. In most crystals, the competition of phonon scattering by anharmonic interactions and crystalline imperfections leads to a non-monotonic trend of thermal conductivity with temperature. Defect-free crystals that exhibit the glassy trend of low thermal conductivity with a monotonic increase with temperature are desirable because they are intrinsically thermally insulating while retaining useful properties of perfect crystals. However, this behavior is rare, and its microscopic origin remains unclear. Here, we report the observation of ultralow and glass-like thermal conductivity in a hexagonal perovskite chalcogenide single crystal, BaTiS 3 , despite its highly symmetric and simple primitive cell. Elastic and inelastic scattering measurements reveal the quantum mechanical origin of this unusual trend. A two-level atomic tunneling system exists in a shallow double-well potential of the Ti atom and is of sufficiently high frequency to scatter heat-carrying phonons up to room temperature. While atomic tunneling has been invoked to explain the low-temperature thermal conductivity of solids for decades, our study establishes the presence of sub-THz frequency tunneling systems even in high-quality, electrically insulating single crystals, leading to anomalous transport properties well above cryogenic temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Topography inversion in scanning tunneling microscopy of single-atom-thick materials from penetrating substrate states

Scanning tunneling microscopy (STM) is one of the indispensable tools to characterize surface structures, but the distinction between atomic geometry and electronic effects based on the measured tunneling current is not always straightforward. In particular, for single-atomic-thick materials (graphene or boron nitride) on metallic substrates, counterintuitive phenomena such as a larger tunneling current for insulators than for metal and a topography opposite to the atomic geometry are reported. Using first-principles density functional theory calculations combined with analytical modeling, we reveal the critical role of penetrating states of metallic substrates that surpass 2D material states, hindering the measurement of intrinsic 2D materials states and leading to topography inversion. Our finding should be instrumental in the interpretation of STM topographies of atomic-thick materials and in the development of 2D material for (opto)electronic and various quantum applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Probing topological quantum matter with scanning tunnelling microscopy

The search for topological phases of matter is evolving towards strongly interacting systems, including magnets and superconductors, where exotic effects emerge from the quantum-level interplay between geometry, correlation and topology. Over the past decade or so, scanning tunnelling microscopy has become a powerful tool to probe and discover emergent topological matter, because of its unprecedented spatial resolution, high-precision electronic detection and magnetic tunability. Scanning tunnelling microscopy can be used to probe various topological phenomena, as well as complement results from other techniques. We discuss some of these proof-of-principle methodologies applied to probe topology, with particular attention to studies performed under a tunable vector magnetic field, which is a relatively new direction of recent focus. Finally, we then project the future possibilities for atomic-resolution tunnelling methods in providing new insights into topological matter.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Alternating-bias assisted annealing of amorphous oxide tunnel junctions

Superconducting quantum bits (qubits) rely on ultra-thin, amorphous oxide tunneling barriers that can have significant inhomogeneities and defects as grown. This can result in relatively large uncertainties and deleterious effects in the circuits, limiting the scalability. Finding a robust solution to the junction reproducibility problem has been a long-standing goal in the field. Here, we demonstrate a transformational technique for controllably tuning the electrical properties of aluminum-oxide tunnel junctions. This is accomplished using a low-voltage, alternating-bias applied individually to the tunnel junctions, with which resistance tuning by more than 70% can be achieved. The data indicates an improvement of coherence and reduction of two-level system defects. Transmission electron microscopy shows that the treated junctions are predominantly amorphous, albeit with a more uniform distribution of alumina coordination across the barrier. This technique is expected to be useful for other devices based on ionic amorphous materials.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Tunable tunnel barriers in a semiconductor via ionization of individual atoms

individual adatoms deposited on an InSb(110) surface. The adatoms can be reproducibly dropped off from the STM tip by voltage pulses, and impact tunneling into the surface by up to ~100×. The spatial extent and magnitude of the tunneling effect are widely tunable by imaging conditions such as bias voltage, set current and photoillumination. We attribute the effect to occupation of a (+/0) charge transition level, and switching of the associated adatom-induced band bending. The effect in STM topographic images is well reproduced by transport modeling of filling and emptying rates as a function of the tip position. STM atomic contrast and tunneling spectra are in good agreement with density functional theory calculations for In adatoms. The adatom ionization effect can extend to distances greater than 50 nm away, which we attribute to the low concentration and low binding energy of the residual donors in the undoped InSb crystal. These studies demonstrate how individual atoms can be used to sensitively control current flow in nanoscale devices.

Physics↗