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At least 109 records · Page 6

Thermal decomposition pathways of bulk electrolytes on vanadium oxide nanocrystals

The thermal stability of electrolytes at an elevated temperature induced by battery charge-discharge cycling is critical for the long cycling performance of a rechargeable battery. For many multivalent systems, such as rechargeable magnesium batteries, which offer great potential for high energy density and utilize earth-abundant resources, electrolyte instability and electrode surface passivation, arising from electrolyte decomposition, remain as major roadblocks. Understanding the electrolyte decomposition pathways at the electrode-electrolyte interface is essential to provide guidance in overcoming this challenge. In this work, in situ 13 C magic angle spinning nuclear magnetic resonance (MAS NMR) and first-principles calculations were used to investigate the thermal decomposition of the electrolyte in a system consisting of MgV 2 O 4 , a novel cathode for magnesium batteries, mixed with a bulk electrolyte consisting of magnesium bis(trifluoromethanesulfonyl)imide (Mg(TFSI) 2 ) in diglyme (G2). We show that significant electrolyte decomposition is observed in bulk 1.0 M Mg(TFSI) 2 in G2 mixed with nanometer sized MgV 2 O 4 powder at elevated temperatures. This observation is to mimic the possible thermal decomposition that might happen during battery cycling. We demonstrate that the MgV 2 O 4 surface is covered by a layer of decomposed G2 products. We conclude that the dominant reaction pathway for electrolyte decomposition is the thermal decomposition of the pure electrolytes at elevated temperatures, followed by adsorption of G2 decomposition products to the MgV 2 O 4 surface. The activation energy for the major decomposition pathway is obtained. In conclusion, this work highlights the importance of studying thermal decomposition of electrolytes for overall system stability and explores electrolyte stability at significantly elevated temperatures.

25 ENERGY STORAGE

Effect of vanadium on phase composition and hard magnetic properties of as-solidified and heat-treated Sm–Fe–(Ti,V) alloys

Although the intrinsic magnetic properties of Ti-stabilized Sm(Fe,Co,Ti) 12 compounds exhibit potential of excellent rare-earth-lean permanent magnets, it has been much easier to realize large coercivities with the isostructural compounds stabilized by either V or by certain combinations of Ti and V. To elucidate the influence of V on the microstructure and magnetic properties, a series of Sm 8.1 Fe 78.4 (Ti 1-x V x ) 13.5 alloys was studied after arc-melting and annealing at 850–1000 °C. The alloys were found to fall into three groups. For x ≤ 0.2, solidification generates mostly the Sm(Fe,Ti,V) 12 phase, but annealing converts at least part of it into the non-magnetic Sm(Fe,Ti,V) 11 and the magnetically soft Sm 2 (Fe,Ti,V) 17 phases. For 0.2 < x < 0.6, the alloys solidify into a near-equilibrium mixture of the Sm(Fe,Ti,V) 12 , TiFe 2 and Sm-rich phases. For x ≥ 0.6, solidification generates large fractions of α-Fe solid solution and Sm-rich phases; an annealing step is necessary to complete the formation of Sm(Fe,Ti,V) 12 phase. Also, for x ≥ 0.6 the temperature below which the Sm(Fe,Ti,V) 12 phase is stable decreases with x, as does the fraction of this phase formed during solidification. Here, the differences between these three groups of alloys suggest different strategies for developing hard magnetic properties, with the likelihood of a success increasing with increasing x. For x ≥ 0.6, heat treatment alone is demonstrated to generate a microstructure of micron and submicron Sm(Fe,Ti 1-x V x ) 12 crystallites separated by a Sm-rich phase and exhibiting a coercivity with values up to 3.5 and 5.7 kOe for x = 0.8 and 1.0, respectively.

36 MATERIALS SCIENCE

First-principles investigation of cerium and neodymium diffusion in BCC chromium and vanadium via vacancy-mediated transport

Lanthanide transport plays a crucial role in the performance and longevity of metallic nuclear fuels. This study examines the diffusion behavior of Ce and Nd—two major fission products—in body-centered cubic (BCC) Cr and V, which are potential liner or coating materials for mitigating fuel-cladding chemical interactions (FCCI). Using density functional theory (DFT) calculations and self-consistent mean-field (SCMF) analysis, the vacancy-mediated diffusion coefficients are evaluated. Our findings reveal that Ce and Nd act as oversized solutes and are strongly bound to vacancies in BCC Cr and V, with diffusivities in Cr significantly lower than in V and in hexagonal closed-packed (HCP) Zr, as investigated in our previous work. The activation energies for Ce and Nd diffusion are 3.39 and 3.32 eV, respectively, in BCC Cr, and 2.56 and 2.33 eV, respectively, in BCC V. Analysis of vacancy drag and partial diffusion coefficient ratios indicates a strong tendency for lanthanide enrichment at vacancy sinks in BCC Cr, and to a lesser extent in BCC V, with this effect persisting up to the melting point in Cr and remaining substantial for Nd in V at high temperatures. Under irradiation, the increase in vacancy concentration is expected to enhance lanthanide transport, potentially accelerating interactions at liner-cladding interfaces. Although BCC Cr exhibits relatively low lanthanide diffusivities under equilibrium conditions, the expected segregation tendencies under irradiation suggest that Zr liners may be a more favorable option. Further investigations using rate theory, cluster dynamics, and phase-field modeling are required to quantitatively assess the performance of these materials in reactor environments.

36 - MATERIALS SCIENCE

When van der Waals Met Kagome: A 2D Antimonide with a Vanadium-Kagome Network

2D materials showcase unconventional properties emerging from quantum confinement effects. In this work, a “soft chemical” route allows for the deintercalation of K + from the layered antimonide KV 6 Sb 6 , resulting in the discovery of a new metastable 2D-Kagome antimonide K 0.1(1) V 6 Sb 6 with a van der Waals gap of 3.2 Å. The structure of K 0.1(1) V 6 Sb 6 was determined via the synergistic techniques, including X-ray pair distribution function analysis, advanced transmission electron microscopy, and density functional theory calculations. The K 0.1(1) V 6 Sb 6 compound crystallizes in the monoclinic space group C2/m (a = 9.57(2) Å, b = 5.502(8) Å, c = 10.23(2) Å, β = 97.6(2)°, Z = 2). The [V 6 Sb 6 ] layers in K 0.1(1) V 6 Sb 6 are retained upon deintercalation and closely resemble the layers in the parent compound, yet deintercalation results in a relative shift of the adjacent [V 6 Sb 6 ] layers. The magnetic properties of the K 0.1(1) V 6 Sb 6 phase in the 2–300 K range are comparable to those of KV 6 Sb 6 and another Kagome antimonide KV 3 Sb 5 , consistent with nearly temperature-independent paramagnetism. Electronic band structure calculation suggests a nontrivial band topology with flat bands and opening of band crossing afforded by deintercalation. Transport property measurements reveal a metallic nature for K 0.1(1) V 6 Sb 6 and a low thermal conductivity of 0.6 W K –1 m –1 at 300 K. Additionally, ion exchange in KV 6 Sb 6 via a solvothermal route leads to a successful partial exchange of K + with A + (A = Na, Rb, and Cs). Here, this study highlights the tunability of the layered structure of the KV 6 Sb 6 compound, providing a rich playground for the realization of new 2D materials.

2D

Impact of charge-density-wave pattern on the superconducting gap in Vanadium-based kagome superconductors

Kagome metals AV 3 Sb 5 (A = K, Rb, Cs) provide a compelling platform to explore the interplay between superconductivity (SC) and charge-density-wave (CDW) orders. While distinct CDW orders have been identified in K/RbV 3 Sb 5 versus CsV 3 Sb 5 , their influence on the SC order parameter remains unresolved. Here, we investigate low-energy quasiparticle excitations in AV 3 Sb 5 , uncovering a striking difference in SC gap anisotropy: K/RbV 3 Sb 5 exhibit fully gapped, nearly isotropic s-wave states, in contrast to the strongly anisotropic SC gap in CsV 3 Sb 5 . Impurity scattering introduced via electron irradiation in K/RbV 3 Sb 5 has a minimal impact on low-energy excitations, and it induces an increase in the SC transition temperature T c , consistent with more isotropic s-wave SC competing with CDW order. Our theoretical analysis attributes the observed SC gap anisotropy differences to distinct CDW modulation patterns: the star-of-David structure unique to CsV 3 Sb 5 preserves van Hove singularities near the Fermi level, promoting anisotropic s-wave SC with enhanced T c via bond-order fluctuations. These findings establish a systematic framework for understanding the interplay between SC and CDW orders in AV 3 Sb 5 , driven by electron correlations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND

Mechanisms enabling reconfigurability and long-term retention in vanadium oxide electrochemical memory

Phase coexistence in nanoscale electrochemical random-access memory (ECRAM) has recently been demonstrated to enable both information storage and extraordinary reconfigurability. These proof-of-principle demonstrations have left the mechanistic details of such a process unresolved. Particularly, the mechanisms that stabilize the multiple phases, and the underlying processes behind sustained memory retention, remain unclear, and are necessary to design such devices. Here we report microscale ECRAM devices composed of V⁢O𝑥, which enables us to directly probe the active region in an operando fashion using optical techniques. Using Raman mapping, we show the phase coexistence driven by the electrochemical injection of O vacancies to be spatially uniform (i.e., with no filaments). The stability was observed to be unusually long, with 1% loss over 14 years in ambient conditions. First-principles calculations of the oxygen vacancy formation energies in V⁢O 𝑥 further support the thermodynamic coexistence of multiple V⁢O 𝑥 phases and clarify the origin of the observed long-term retention in the ECRAM devices. Further, we demonstrate single devices that can be voltage programmed to exhibit synaptic, neuronal, and reconfigurable logic gate functionalities. Furthermore, we not only uncover the phase coexistence mechanism that may help device design, but also demonstrate the circuit-level applications of reconfigurability.

Electrical conductivity