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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Seebeck Coefficient Measured With Differential Heat Pulses

Common experimental errors reduced because pulse technique suppresses drifts in thermoelectric measurements. Differential-heat-pulse apparatus measures Seebeck coefficient in semiconductors at temperatures up to 1,900 K. Sample heated to measuring temperature in furnace. Ends of sample then differentially heated a few degrees more by lamps. Differential temperature rise and consequent Seebeck voltage measured via thermocouple leads. Because pulse technique used, errors that often arise from long-term drifts in thermoelectric measurements suppressed. Apparatus works with temperature differences of only few degrees, further increasing accuracy of coefficients obtained.

Zoltan, L.↗
DOE OSTI2020

Electrical meter probe contact verification system

A system and method verifies continuity with and measures voltage across a circuit under test (in some instances simultaneously) using two or more test probes. Two or more probe continuity circuits measure continuity through the test probes by injecting a test current through and measuring a processed test current received at each of the plurality of test probes. The probe continuity circuits measure the respective processed test current rendered by the test current flowing through the test circuit at each test probe. A voltmeter measures the potential difference across the test probes.

42 ENGINEERING↗
DOE OSTI2023

The Effect of Dopant Concentration and Annealing Treatments on N-Type Iodine Doped CdTe

We report properties of highly conducting n-type cadmium telluride single crystals doped with iodine (CdTe:I). These crystals were grown with dopant concentrations in the range of 10^17 cm-3 to 10^19 cm-3 by Modified Vertical Bridgman (MVB) melt growth. Post-growth dopant activation, including Cd annealing, Te annealing, and rapid thermal annealing (RTA), was applied to improve free carrier density. The structural, optical, and electrical properties were analyzed by Glow Discharge Mass Spectroscopy (GDMS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Photoluminescence Spectroscopy (PL), optical absorption, Hall measurements, Capacitance-Voltage (CV) measurements, and time-resolved photoluminescence (TRPL). The results indicate that Cd annealing is the most effective activation method to get 100% donor activation (n is approximately 2 x 10^18 cm-3), which is close to the room temperature solubility limit of iodine. This leads to the lowest resistivity and the highest mobility. Moreover, this data suggests a potential role of Cd vacancy-related defects on electrical self-compensation.

annealing↗
NASA NTRS1997

Chromium Diffusion Doping on ZnSe Crystals

Chromium doped zinc selenide crystal have recently been demonstrated to be a promising material for near-IR room temperature tunable lasers which have an emission range of 2-3 micrometers. In this study a new diffusion doping process has been developed for incorporation of Cr(+2) ion into ZnSe wafers. This process has been successfully performed under isothermal conditions, at temperatures above 800 C. Concentrations in excess of 10(exp 19) Cr(+2) ions/cu cm, an order of magnitude larger than previously reported in melt grown ZnSe material, have been obtained by diffusion doping, as estimated from optical absorption measurements. The diffusivity was estimated to be about 10(exp -8) sq cm/sec using a thin film diffusion model. Resistivity was derived from current-voltage measurements and in the range of 10(exp 13) and 10(exp 16) omega-cm. The emission spectra and temperature dependent lifetime data will also be presented and discussed.

Journigan, Troy D.↗
NASA NTRS1980

High temperature properties of GaAlAs/GaAs heteroface solar cells

The properties of p-GaAlAs/p-GaAs/n-GaAs heteroface solar cells were determined in the temperature range from 25 C to 350 C. Illumination air mass zero (AM0) current-voltage measurements show that the short circuit current increases as a function of temperature up to 210 C and then decreases up to 350 C. The open circuit voltage and fill factor decrease linearly with increasing temperature. The spectral response shifts toward higher wavelengths with increasing temperature.

Walker, G. H.↗
NASA NTRS2015

Dynamic Temperature and Pressure Measurements in the Core of a Propulsion Engine

Dynamic temperature and pressure measurements were made in the core of a TECH977 propulsion engine as part of a NASA funded investigation into indirect combustion noise. Dynamic temperature measurements were made in the combustor, the inter-turbine duct, and the mixer using ten two-wire thermocouple probes. Internal dynamic pressure measurements were made at the same locations using piezoresistive transducers installed in semi-infinite coils. Measurements were acquired at four steady state operating conditions covering the range of aircraft approach power settings. Fluctuating gas temperature spectra were computed from the thermocouple probe voltage measurements using a compensation procedure that was developed under previous NASA test programs. A database of simultaneously acquired dynamic temperature and dynamic pressure measurements was produced. Spectral and cross-spectral analyses were conducted to explore the characteristics of the temperature and pressure fluctuations inside the engine, with a particular focus on attempting to identify the presence of indirect combustion noise.

Turbomachinery Noise↗
NASA NTRS1975

Effects of high doping levels silicon solar cell performance

The significance of the heavy doping effects (HDE) on the open-circuit voltage of silicon solar cells is assessed. Voltage calculations based on diffusion theory are modified to include the first order features of the HDE. Comparisions of the open-circuit voltage measured for cells of various base resistivities are made with those calculated using the diffusion model with and without the HDE. Results indicate that the observed variation of voltage with base resistivity is predicted by these effects. A maximum efficiency of 19% (AM0) and a voltage of 0.7 volts are calculated for 0.1 omega-cm cells assuming an optimum diffused layer impurity profile.

Godlewski, M. P.↗
NASA NTRS2023

Facility Effects on the Ion Characteristics of A 12.5-Kw Hall Thruster

During a laser-induced fluorescence test of a 12.5-kW magnetically-shielded Hall thruster, ion characteristics in the discharge channel and near the poles were measured as the background pressure and electrical configuration were varied. The acceleration zone of the thruster moved upstream by 2% and 10% of the channel length when the background pressure was raised to 1.8 times and 7 times the lowest achievable pressure, respectively. Examination of the characteristics of the ions near the pole covers suggested that as the background pressure decreased the pole covers may be experiencing more erosion. When operating at a discharge voltage of 300 V, the acceleration zone was observed to be at the same location for all electrical configurations. When operating at a discharge voltage of 600V, the acceleration zone was observed to move 3% of the channel length upstream when the thruster body was floated instead of tied to the cathode or grounded to the facility. Characteristics of the ions bombarding the pole covers did not vary across the tested electrical configurations. This observation combined with thruster body voltage measurements suggested that varying the electrical configuration only affected the thruster body sheath voltage and did not affect the plasma potential beyond the sheath.

Electric propulsion↗
DOE OSTI2023

Contactless measurement of the photovoltage in BiVO 4 photoelectrodes

The power output of photoelectrochemical devices for solar energy-to-fuel conversion is determined by the photovoltage of the junction under illumination. In the presence of fast redox couples, the photovoltage can be obtained directly from current–voltage measurements of the device. However, for slow redox couples (H + /H 2 , O 2 /H 2 O) used in solar fuel photoelectrodes, photovoltage measurements are not straightforward, due to the kinetic overpotentials during charge transfer. Here we show that the photovoltage of BiVO 4 electrodes in contact with fast electron donors KI, Na 2 SO 3 or H 2 O 2 or K 4 Fe(CN) 6 can be measured in a contactless way with vibrating Kelvin probe surface photovoltage (SPV) spectroscopy. The photovoltage varies with illumination wavelength and intensity and matches the open circuit potential of the electrodes, obtained separately from electrochemical measurements. Plots of the photovoltage versus irradiance can be used to predict the oxidizing power of each electrode under zero applied bias. Except for K 4 Fe(CN) 6 , which causes shunting in the BiVO 4 electrode, photovoltage values correlate well with the built-in potential of each junction. Furthermore, the ability to obtain photovoltage information through contactless SPV measurements will be useful in the search for solid–liquid junctions with superior energy conversion properties.

14 SOLAR ENERGY↗
DOE OSTI2024

Reducing the Barrier Height in Organic Transistors

Abstract Reducing the Schottky barrier height and Fermi level de‐pinning in metal‐organic semiconductor contacts are crucial for enhancing the performance of organic transistors. The reduction of the Schottky barrier height in bottom‐contact top‐gate organic transistors is demonstrated by adding 1 nm thick atomic layer deposited Al 2 O 3 on the source and drain contacts. By using two different donor‐acceptor copolymers, both p‐ and n‐ type transistors are investigated. Temperature‐dependent current–voltage measurements from non‐treated, self‐assembled monolayer treated, and Al 2 O 3 treated Au source‐drain contact field‐effect transistors with varying channel lengths are carried out. The drain current versus drain voltage near zero gate voltage, which may be described by the thermionic emission model at temperatures above 150 K, allows the estimation of the Schottky barrier height ( φ B ). The Al 2 O 3 contact‐treated transistors show more than 40% lower φ B compared with the non‐treated contacts in the p ‐type transistor. Similarly, an isoindigo‐based transistor, with n ‐type transport, shows a reduction in φ B with Al 2 O 3 treated contacts suggesting that such ultrathin oxide layers provide a universal method for reducing the barrier height.

Ghobadi, Arash↗
DOE OSTI2023

Automatic voltage regulation application for PV inverters in low-voltage distribution grids – A digital twin approach

This paper proposes a hierarchical coordinated control strategy for PV inverters to keep voltages in low-voltage (LV) distribution grids within specified limits. The top layer of the proposed architecture consists of the designed automatic voltage regulation (AVR) application, which has access to voltage measurements and grid parameters from the LV distribution grid, both current and historical. The AVR application solves a constrained optimization problem, which provides a set of local control set-points that bring the voltage across the grid within bounds. The middle layer consists of a local Volt/VAR controller, which is adjusted by the AVR app, while the bottom layer is the inner-loop controller of the PV inverter. The proposed method not only improves the voltage quality in the grid but also manages the reactive power outputs of PV inverters efficiently. Further, a digital twin of the cyber-physical system has also been employed that interacts with the control system to ensure its appropriate operation. The effectiveness of the proposed methodology is demonstrated on a representative low-voltage feeder located in Denmark.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS2008

Preliminary Development and Testing of a Self-Injecting Gallium MPD Thruster

Discharge current and terminal voltage measurements were performed on a gallium electromagnetic thruster at discharge currents in the range of 20-54 kA. It was found that the arc impedance has a value of 6-7 m(Omega) at peak current. The absence of high-frequency oscillations in the terminal voltage trace indicates lack of the "onset" condition often seen in MPD arcs, suggesting that a sufficient number of charge carriers are present for current conduction. The mass ablated per pulse was not measured experimentally; however the mass flow rate was calculated using an ion current assumption and an anode power balance. Measurement of arc impedance predicts a temperature of 3.5 eV which from Saha equilibrium corresponds to Z = 2.0 - 3.5, and assuming Z = 2 yields an Isp of 3000 s and thrust efficiency of 50%.

Thomas, Robert E.↗
DOE OSTI2020

Electrical injection and transport in Teflon-diluted hole transport materials

Diluting small molecule organic semiconductor hole transport materials with Teflon AF (TAF) dramatically increases their thermal/morphological stability while counterintuitively also increasing the current density in hole-only diodes. Here, we explore the origin of this current enhancement in co-evaporated blends of TAF and N,N'-Di(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (NPD) and find that it results from improved hole injection and not from a mobility enhancement due to semiconductor dilution effects. Whereas electroabsorption measurements indicate that an interface dipole shift of up to 0.5 eV (depending on TAF concentration) aides hole injection at the indium-tin-oxide anode, time-of-flight and temperature-dependent current-voltage measurements show that the mobility of 25 vol% TAF:NPD blends decreases by roughly an order of magnitude relative to neat NPD despite having slightly lower energetic disorder. For comparison, diluting with 25 vol% high density polyethylene achieves a similar reduction in energetic disorder but only decreases the mobility by a factor of two. Furthermore, these results highlight the tradeoff between reducing energetic disorder and frustrating percolation in diluted organic semiconductors, and represent a step toward thermally-evaporated polymer-small molecule composites that maintain high mobility while offering improved morphological stability and lower refractive index for organic light emitting diodes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Initial Benchmarks of UV LEDs and Comparisons with White LEDs

The primary goal of this report is to benchmark the initial level of performance of a selection of commercial UV LEDs across all three bands (i.e., UV-A, UV-B, UV-C). To provide the initial performance benchmarks, a test matrix containing 13 different UV LED products was created in association with the LED Systems Reliability Consortium (LSRC). The products in this test matrix were all commercially available as of June 2021, and at least 22 samples of each product were tested. In addition, two common, commercial white LEDs were tested to provide a benchmark against blue-pumped white LEDs. Testing of the samples included electrical performance testing (e.g., current-voltage measurements) and photometric testing in a calibrated integrating sphere capable of measuring devices in the UV-A, UV-B, and UV-C bands. The electrical testing provided insights into the performance of the semiconductor layers in the LEDs, allowing parameters such as the threshold voltage (V th ) and serial resistance (R serial ) of each sample to be determined. The photometric testing provided insights into emission wavelengths, peak shapes, and radiant efficiencies for each sample. Combined, the information from these tests permits the overall device efficiencies to be compared and provides insights into the electrical and optical performance of the technology.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
NASA NTRS1987

MPD thruster scaling

Full scale and half scale versions of the Princeton Benchmark and Flared Anode self-field MPD thrusters have been investigated to determine the influence of scale and design upon MPD behavior. Thruster performance determined by impulsive thrust and terminal voltage measurements is found to depend primarily on propellant flow rate and the ratio of electrode radii, but not on thruster size. Current distributions obtained from magnetic field probes are independent of scale for both thruster designs. Voltage depends upon current, electrode geometry, and propellant flow rate. This behavior agrees qualitatively with calculations based on a fundamental MHD formulation.

Kelly, A. J.↗
NASA NTRS1976

Rapid and precise measurement of flatband voltage

The paper outlines the design, principles of operation, and calibration of a five-IC network intended to give a rapid, precise, and automatic determination of the flatband voltage of MOS capacitors. The basic principle of measurement is to compare the analog output voltage of a capacitance meter - which is directly proportional to the capacitance being measured - with a preset or dialed-in voltage proportional to the calculated flatband capacitance by means of a comparator circuit. The bias to the MOS capacitor supplied through the capacitance meter is provided by a ramp voltage going from a negative toward a positive voltage level and vice versa. The network employs two monostable multivibrators for reading and recording the flatband voltage and for resetting the initial conditions and restarting the ramp. The flatband voltage can be held and read on a digital voltmeter.

Li, S. P.↗
DOE OSTI2020

Joint Estimation of Topology and Injection Statistics in Distribution Grids with Missing Nodes

Optimal operation of distribution grid resources relies on accurate estimation of its state and topology. Practical estimation of such quantities is complicated by the limited presence of real-time meters. This article discusses a theoretical framework to jointly estimate the operational topology and statistics of injections in radial distribution grids under limited availability of nodal voltage measurements. In particular, we show that our proposed algorithms are able to provably learn the exact grid topology and injection statistics at all unobserved nodes as long as they are not adjacent. The algorithm design is based on novel ordered trends in voltage magnitude fluctuations at node groups, that are independently of interest for radial physical flow networks. The complexity of the designed algorithms is theoretically analyzed and their performance is validated using both linearized and nonlinear ac power flow samples in test distribution grids.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2021

Fault Detection Utilizing Convolution Neural Network on Timeseries Synchrophasor Data From Phasor Measurement Units

An end-to-end supervised learning method is proposed for fault detection in the electric grid using Big Data from multiple Phasor Measurement Units (PMUs). The approach consists of preprocessing steps aimed at reducing data noise and dimensionality, followed by utilization of six classification models considered for detecting faults. Three of the models were variants of Convolutional Neural Network (CNN) architectures that consider a single type of measurement (voltage, current or frequency) at all PMUs or all types together also at all PMUs. CNN based models were compared to traditional methods of Logistic Regression (LR), Multi-layer Perceptron (MLP) and Support Vector Machine (SVM). Evaluation was conducted on two-year data measured by PMUs at 37 locations in a large electric grid. Here, the response variable for classification were extracted from the grid-wide outage event log. Experiments show that CNN-based models outperformed traditional methods on one year out-of-sample outage detection over the entire grid.

42 ENGINEERING↗