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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Identification of the defect dominating high temperature reverse leakage current in vertical GaN power diodes through deep level transient spectroscopy

Deep level defects in wide bandgap semiconductors, whose response times are in the range of power converter switching times, can have a significant effect on converter efficiency. We use Deep Level Transient Spectroscopy (DLTS) to evaluate such defect levels in the n- drift layer of vertical GaN (v-GaN) power diodes with VBD ~ 1500 V. DLTS reveals three energy levels that are at ~0.6 eV (highest density), ~0.27 eV (lowest density) and ~ 45 meV (a dopant level) from the conduction band. Dopant extraction from Capacitance-Voltage measurement test (C-V) at multiple temperatures enables trap density evaluation, and the ~0.6 eV trap has a density of 1.2 × 10 15 cm -3 . Here, the 0.6 eV energy level and its density are similar to a defect that is known to cause current collapse in GaN based surface conducting devices (like HEMTs). Analysis of reverse bias currents over temperature in the v-GaN diodes indicates a predominant role of the same defect in determining reverse leakage current at high temperatures, reducing switching efficiency.

42 ENGINEERING↗
DOE OSTI2022

Investigation of long-term light stability of negative charge injected into oxide-nitride-oxide passivation stack of crystalline silicon solar cells

A negatively charged oxide-nitride-oxide stack for field-effect passivation of crystalline silicon solar cells is discussed. The negative charge was injected into the stack by a plasma charge injection technology. Charge stability was studied by exposing samples to AM1.5 simulation visible light and full-spectrum light at temperatures ranging from 55 to 78 °C for up to 300 h. Charge injection and loss were quantified based on shifts in the flatband voltage of capacitance–voltage curves measured with a mercury probe. The most probable mechanism of charge loss was found to be diffusion of negative charged hydrogen atoms through nitride and bottom oxide. The optimum recipe for each layer of the stack was investigated to minimize the loss of injected charge. The flatband voltage decay of the optimized stack was found to fit a power-law trend, suggesting the dispersive transport of hydrogen atoms with a dispersion parameter of ~0.06–0.07. The optimized stack is projected to maintain a negative charge density of about 3.6 × 10 12 cm –2 or more after 25 years of field operation in an environment such as Arizona, which would be sufficient for field-effect passivation under one-sun illumination. Furthermore, the high stability of the negative injected charge makes the plasma charging technology a safer and lower cost alternative to Al 2 O 3 -passivation technology commonly used to passivate p-type surfaces.

14 SOLAR ENERGY↗
DOE OSTI2023

Measurement of minority carrier diffusion length in p -GaN using electron emission spectroscopy (EES)

Electron emission spectroscopy was performed on metalorganic chemical vapor deposition grown p-n – -n + junctions with p-thicknesses ranging from 50 to 300 nm, doped with [Mg] = 3.5 × 10 19 cm –3 . By measuring the decreasing emitted electron intensity from a cesiated p-GaN surface with increasing p-thickness, we were able to extract the minority carrier diffusion length of electron in p-type GaN, L e = 26 ± 3 nm. The measured value is in good agreement with literature reported values. In conclusion, the extrapolated electron current at the n – region–p-GaN interface is in reasonable agreement with the simulated electron current at the interface.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Sources of error and methods to improve accuracy in interface state density analysis using quasi-static capacitance–voltage measurements in wide bandgap semiconductors

Characterizing interface trap states in commercial wide bandgap devices using frequency-based measurements requires unconventionally high probing frequencies to account for both fast and slow traps associated with wide bandgap materials. The C - ψs technique has been suggested as a viable quasi-static method for determining the interface trap state densities in wide bandgap systems, but the results are shown to be susceptible to errors in the analysis procedure. Here this work explores the primary sources of errors present in the C - ψs technique using an analytical model that describes the apparent response for wide bandgap MOS capacitor devices. Measurement noise is shown to greatly impact the linear fitting routine of the 1/C$^{*2}_s$ vs Ψ s plot to calibrate the additive constant in the surface potential/gate voltage relationship, and an inexact knowledge of the oxide capacitance is also shown to impede interface trap state analysis near the band edge. In addition, a slight nonlinearity that is typically present throughout the 1/C$^{*2}_s$ vs Ψ s plot hinders the accurate estimation of interface trap densities, which is demonstrated for a fabricated n-SiC MOS capacitor device. Methods are suggested to improve quasi-static analysis, including a novel method to determine an approximate integration constant without relying on a linear fitting routine.

42 ENGINEERING↗
DOE OSTI2022

Origin of structural degradation in Li-rich layered oxide cathode

Li- and Mn-rich (LMR) cathode materials that utilize both cation and anion redox can yield substantial increases in battery energy density 1,2,3 . However, although voltage decay issues cause continuous energy loss and impede commercialization, the prerequisite driving force for this phenomenon remains a mystery 3,4,5,6 In this work, with in situ nanoscale sensitive coherent X-ray diffraction imaging techniques, we reveal that nanostrain and lattice displacement accumulate continuously during operation of the cell. Evidence shows that this effect is the driving force for both structure degradation and oxygen loss, which trigger the well-known rapid voltage decay in LMR cathodes. By carrying out micro- to macro-length characterizations that span atomic structure, the primary particle, multiparticle and electrode levels, we demonstrate that the heterogeneous nature of LMR cathodes inevitably causes pernicious phase displacement/strain, which cannot be eliminated by conventional doping or coating methods. We therefore propose mesostructural design as a strategy to mitigate lattice displacement and inhomogeneous electrochemical/structural evolutions, thereby achieving stable voltage and capacity profiles. These findings highlight the significance of lattice strain/displacement in causing voltage decay and will inspire a wave of efforts to unlock the potential of the broad-scale commercialization of LMR cathode materials.

25 ENERGY STORAGE↗
DOE OSTI2022

An Engineered Multifunctional Composite for Passive Sensing, Power Harvesting, and In Situ Damage Identification with Enhanced Mechanical Performance

A multifunctional fiber-reinforced composite with passive self-sensing, energy-harvesting, and damage detection capabilities is presented. In this work, barium titanate piezoelectric microparticles are deposited on basalt fibers by a scalable, low-cost, environmentally friendly continuous feed-through process. The resulting composite derives a superior interlaminar shear strength from the microparticle-modified fiber–matrix interfaces. The composite also demonstrates passive self-sensing capabilities that produce electrical signals proportional to various dynamic loading events. Vibration and strain-controlled experiments are performed on composite beams to quantify the sensitivity and power output as a function of input acceleration and strain. Furthermore, these composite-generated electrical signals are used to identify in situ damage initiation for structural health monitoring to inform composite damage prior to structural failure. In brief, this truly multifunctional composite simultaneously displays a sensitivity of 0.5–2.6 mV g -1 at a resolution of 0.045–0.20g (g = gravitational acceleration), energy harvesting in the range of nW cc -1 , and prediction of early damage by exhibiting 0.017–1.17 mV peaks in voltage–time history profiles while assuring ≈20% improved interlaminar shear strength.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Evaluating switch lifetime in soft-switched single-stage differential-mode SST

The reliability of semiconductor switches in single-stage differential-mode solid-state transformers (DM-SSTs) has not been systematically evaluated under soft-switching operation and realistic grid conditions. This paper presents a switch-level reliability analysis for soft-switched and hard-switched DM-SST configurations by integrating converter-specific power loss modeling with empirical lifetime prediction. Analytical derivation of device current profiles specific to the DM-SST is used to characterize electrothermal stress, which is then mapped to lifetime using degradation models obtained from power cycling tests (PCTs). Applied to realistic SST load profiles and grid voltage variations, this approach provides a probabilistic prediction of switch lifetime for the DM-SST. Lifetime estimates for both SiC MOSFETs and Si IGBTs are presented, offering insight into device degradation under converter operating conditions. The results quantify the reliability benefits of soft switching in single-stage SSTs, highlighting how switching dynamics influence long-term switch degradation.

14 SOLAR ENERGY↗
DOE OSTI2025

WEST L-mode record long pulses guided by predictions using Integrated Modeling

A new record was set on the WEST Tokamak, designed to operate long duration plasmas in a tungsten (W) environment, with an injected energy of 1.15 GJ and a plasma duration 364s. Scenario development was supported by integrated modeling using the High Fidelity Plasma Simulator (HFPS), the European IMAS-coupled version of JETTO/JINTRAC, which integrates physics-driven modules into a unified framework. In particular, a reduced model for Lower-Hybrid heating and Current-Drive (LHCD) and the quasi-linear turbulent transport model TGLF are crucial for long pulses predictions up to the Last Closed Flux Surface (LCFS). Using this workflow, a 100 s reference discharge was modeled and plasma kinetic profiles and loop voltage were quantitatively well matched. In preparation for the recent long duration experiments, non-inductive current-drive actuators (I P , n e , P LHCD ) were varied to determine the operational domain going towards fully non-inductive discharges. In particular, decreasing the plasma current is shown to ease the access to such conditions, with a careful monitoring of (n e , P LHCD ) to avoid machine limitations. In addition, post-prediction experiments conducted within the investigated parameter range validated the predicted dependencies and were shown to be in quantitative agreement. Exploratory work on the use of ECCD for MHD stability purpose is also introduced.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Interconnection of Three Single-Phase Feeders in North America Distribution Systems

This paper proposes a solution for maintaining power balance within all three phases at residential level during islanded mode of operation. Grid abnormalities can lead to isolating the residential microgrid from the main grid, and as a result, distributed generation (DG) units take the full responsibility of supplying local loads. However, in such condition, some phases might face the challenge of meeting local load demand due to the lack of enough power generation, resulting in voltage drop and frequency variation across household loads. In order to resolve this issue, the proposed method in this paper seamlessly interconnects all three single-phase feeders during islanded mode and forms a unified single-phase residential microgrid. Consequently, the load demands in all three phases are met, leading to enhanced voltage and frequency profiles. For this purpose, a seamless transition algorithm is defined which monitors the system condition in real time, and coordinates the operation of all inverter-based DG units in residential microgrid accordingly during transitions. Case study results are provided to verify the validity of proposed method.

Pilehvar, Mohsen S.↗
DOE OSTI2025

Dopant Optimization of Donors in Semiconductor Opening Switches to Eliminate Prepulse

Semiconductor opening switches are solid-state devices capable of delivering nanosecond, hundreds of kilovolts pulses by interrupting kiloamps of current. The interruption of the current occurs in a moderately doped p-region when a high electric field region (HFR) is formed. The HFR occurs because the reverse pumping current cannot be supported by the saturation velocity and majority carrier concentration of the doping level. However, the donor profile also significantly affects the pulse performance. A secondary prepulse occurs if a secondary HFR is formed at the interface of the background n-doping and N+ doping (X n ) . By moving the location of X n deeper into the diode, the effect of the prepulse is reduced. This article investigates the effect of the donor doping profile on the performance metrics of semiconductor opening switches through technology computer-aided design (TCAD) simulations and experimental results. Through a SILVACO TCAD optimization, we designed a P + /p/n - base/n/N + where the intersection of the moderate p-region and intrinsic n-base region (X p ) is at 160 μm and X n is at 220 μm. This profile is fabricated via silicon epitaxy. Experimentally, it is shown that a deep X n (220 μm) compared with a shallow X n (300 μm) reduces the rise time by >5× . In addition, the magnitude of current density during interruption affects the prepulse foot and pulse shape. At lower current densities without the graded donor profile, high peak voltages are not achieved. Comparing the experimental results to the TCAD simulations shows that the model is predictive under high-current densities in the semiconductor opening switch (SOS) regime.

nanosecond pulse power↗
DOE OSTI2021

Structure–Capacitance Relationships of Graphene/Ionic Liquid Electrolyte Double Layers

The differential capacitance profile of electrochemical interfaces reflects the physical properties of the double layer. For carbon electrodes and ionic liquid based electrolytes, these capacitance profiles are not fully understood. In this work, we utilize constant voltage molecular dynamics simulations to compute differential capacitance profiles of ionic liquids [BMIm + ][BF 4 - ] and [BMIm + ][TFSI - ] mixed with acetonitrile and 1,2-dichloroethane, at model graphene electrodes. We find that both pure and 10% mole fraction ionic liquid electrolytes exhibit camel shaped capacitance profiles with two peaks on either side of a minimum centered at the potential of zero charge. This profile shape results from electric field induced rearrangement of ion structure within the inner layer closest to the electrode interface. At low potential, the ionic liquid inner layer is concentrated with non-polar tri-fluoromethyl and butyl functional groups of the anions and cations, corresponding to the minimum of the capacitance profiles. With increasing voltage, electrostatic interactions of polar/charged functional groups with the electrode surface compete with these non-polar interactions, leading to ion rearrangement that increases the inner layer charge density and results in higher capacitance. After the ion restructuring is complete, the response saturates and capacitance diminishes. The presence of organic solvent significantly changes the composition of the inner layer. For example, strong non-polar interactions between dichloroethane molecules and the graphene surface substantially block ion/electrode contact at moderate potentials. Overall, our simulations highlight the dynamic nature of the inner region of organic electrolyte double layers, and the sensitive dependence on electrolyte composition and applied voltage.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Investigating Electric Field and Light Induced Degradation in Perovskite Solar Cells through Nanometer-Scale Potential Imaging

Electric field and light induced degradations in perovskite solar cells were evaluated through nanometer-scale potential imaging across the device by using in-situ Kelvin probe force microscopy (KPFM). We derived the electric field profile from potential profiles at different bias voltages to evaluate the locations and quality of junctions across the device. We found relative changes in electric field peak intensity at the HTL/perovskite and perovskite/ETL interfaces upon stressing devices separately under voltage or light. KPFM results during 12-hour stress/rest cycling under electrical bias show both reversible and irreversible changes in the device's interfacial fields. We also observed change in the electric field profile between control and degraded devices after 100 hours of stress/rest cycling under light. Our results demonstrate how nanometer-scale potential imaging can be used to understand the impacts of external electric fields and light soaking on both irreversible degradation and reversible metastability in perovskite solar cells.

Kelvin probe force microscopy↗
DOE OSTI2023

Investigation of AlGaN-Delta–GaN-Based UV Photodiodes in a Metal–Semiconductor–Metal Configuration for Efficient and Fast Solar Blind UV Sensing

Metal–semiconductor–metal (MSM) configured UV photodiodes (PD’s) were designed and fabricated on an AlGaN/GaN–based substrate for efficient and ultrafast UV detection. The purpose was to investigate the feasibility of obtaining efficient and ultrafast temporal response from these devices in the UV given the challenges associated with the formation of Schottky contacts on laterally oriented AlGaN/GaN thin films. Two sets of devices were implemented using Pt and Au as metal contacts with 5-µm finger width, 5-µm finger spacing, and a 50-µm x 50-µm active area. Spectral and voltage bias studies were done to establish the spectral profile and the effect of bias voltage on the responsivity of the detectors at 265 nm. Here, the best vertical MSM PD’s produced 0.6-A/W responsivity under 10-V bias voltage at 265 nm. Peak spectral responsivities were recorded as 1.35 A/W and 1.25 A/W at 240 nm for Pt and Au PD’s, respectively.

42 ENGINEERING↗
DOE OSTI2021

Development of Mission Profiles for Humidity Models in the Reliability Testing of PV Inverters: Preprint

To understand the impacts of humidity on PV inverters, mission profiles were developed to accurately describe the different processes and rates based on the environmental factors of temperature, relative humidity, and irradiance. The operating environment of the device introduces stress factors dependent on component temperature, relative humidity, and component voltage. The development of profiles started from looking at historical climate conditions at Cocoa, Florida, a hot and humid location. The profile developed from field location was compared with existing humidity test profiles in industrial and military standards to determine acceleration factors. Prior to the evaluation of the mission profiles, critical components in the PV inverter were identified based on vendor discussions along with failure modes of interest. The profiles considered in this study was demonstrated using a 4-kVA string inverter. The measurements from the devices were substituted in device manufacturer specified equation to determine the severity of each test. The severity of each test was compared against the severity of the 24-hour result to determine the acceleration factor of each test. The acceleration factors were determined to be over a range of 1.2-6 for the existing humidity tests from standards, when compared against the mission profile developed from field data. This optimal humidity/thermal profile will be passed to the IEC standards development for inverter qualification testing.

humidity models↗
DOE OSTI2025

Coordination of Energy Storage and Distributed Generation for Voltage Control and Peak-valley Filling

The increasing penetration of distributed energy resources (DERs) in distribution network (DN) poses challenges on voltage control. In addition, the growing integration of DERs also reshapes the traditional load profile. To comprehensively address the voltage control and peak-valley filling in DN, this paper proposes a model predictive control (MPC) based optimization framework. The proposed method can achieve coordinated voltage control and peak-valley filling by adjusting the reactive power output from distributed generations (DGs) and the charging/discharging of energy storage systems (ESS). The performance of the proposed method is demonstrated by simulations on a modified IEEE-123 bus system.

Zhang, Zhengfa [University of Tennessee, Knoxville↗
DOE OSTI2024

Influence of the Dielectric Constant on the Ionic Current Rectification of Bipolar Nanopores

In this paper, we investigate how the dielectric constant, ϵ, of an electrolyte solvent influences the current rectification characteristics of bipolar nanopores. It is well recognized that bipolar nanopores with two oppositely charged regions rectify current when exposed to an alternating electric potential difference. Here, we consider dilute electrolytes with NaCl only and with a mixture of NaCl and charged nanoparticles. These systems are studied using two levels of description, all-atom explicit water molecular dynamics (MD) simulations and coarse-grained implicit solvent MD simulations. The charge density and electric potential profiles and current-voltage relationship predicted by the implicit solvent simulations with ϵ = 11.3 show good agreement with the predictions from the explicit water simulations. Under nonequilibrium conditions, the predictions of the implicit solvent simulations with a dielectric constant closer to the one of bulk water are significantly different from the predictions obtained with the explicit water model. Further, these findings are closely aligned with experimental data on the dielectric constant of water when confined to nanometric spaces, which suggests that ϵ decreases significantly compared to its value in the bulk. Moreover, the largest electric current rectification is observed in systems containing nanoparticles when ϵ = 78.8. Using enhanced sampling, we have shown that this larger rectification arises from the presence of a significantly deeper minimum in the free energy of the system with a larger ϵ, and when a negative voltage bias is applied. Since implicit solvent models and mean-field continuum theories are often used to design Janus membranes based on bipolar nanopores, this work highlights the importance of properly accounting for the effects of confinement on the dielectric constant of the electrolyte solvent. The results presented here indicate that the dielectric constant in implicit solvent simulations may be used as an adjustable parameter to approximately account for the effects of nanometric confinement on aqueous electrolyte solvents.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗