Innovative methods for the measurement of I* quantum yields and kinetics by diode laser gain-versus-absorption
The quantum yields of a variety of candidate molecules for solar lasant materials to produce I* were tested. The absorption spectrum was measured for each compound and the I* yield determined by the diode laser or by infrared emission, using C3F7I as a standard. The results of these measurements are summarized. A GaAsInP diode laser system was developed to probe I and I* atoms to obtain yields and kinetics. A technique of gain-versus-absorption spectroscopy was investigated to measure quantum yields with high accuracy. The errors in the yield data were reduced to +/- 2% or less. In addition, experiments were set up to measure the rates of F-sublevel changing collisions in both the I ground state and the I* excited state. Finally, experiments and modelling were carried out to explore the possibility of measuring the recombination rates of I* with C3F7 radicals.