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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS2014

A Five-year Performance Study of Low VOC Coatings over Zinc Thermal Spray for the Protection of Carbon Steel at the Kennedy Space Center

The launch facilities at the Kennedy Space Center (KSC) are located approximately 1000 feet from the Atlantic Ocean where they are exposed to salt deposits, high humidity, high UV degradation, and acidic exhaust from solid rocket boosters. These assets are constructed from carbon steel, which requires a suitable coating to provide long-term protection to reduce corrosion and its associated costs. While currently used coating systems provide excellent corrosion control performance, they are subject to occupational, safety, and environmental regulations at the Federal and State levels that limit their use. Many contain high volatile organic compounds (VOCs), hazardous air pollutants, and other hazardous materials. Hazardous waste from coating operations include vacuum filters, zinc dust, hazardous paint related material, and solid paint. There are also worker safety issues such as exposure to solvents and isocyanates. To address these issues, top-coated thermal spray zinc coating systems were investigated as a promising environmentally friendly corrosion protection for carbon steel in an acidic launch environment. Additional benefits of the combined coating system include a long service life, cathodic protection to the substrate, no volatile contaminants, and high service temperatures. This paper reports the results of a performance based study to evaluate low VOC topcoats (for thermal spray zinc coatings) on carbon steel for use in a space launch environment.

Zinc Thermal Spray↗
DOE OSTI2022

Effect of proton irradiation temperature on persistent photoconductivity in zinc oxide metal-semiconductor-metal ultraviolet photodetectors

The electrical and structural characteristics of 50-nm-thick zinc oxide (ZnO) metal-semiconductor-metal ultraviolet (UV) photodetectors subjected to proton irradiation at different temperatures are reported and compared. The devices were irradiated with 200 keV protons to a fluence of 1016 cm−2. Examination of the x-ray diffraction (XRD) rocking curves indicates a preferred (100) orientation prior to irradiation, with decrease in crystal quality afterward. Additionally, peak shifts in XRD and Raman spectra of the control sample relative to well-known theoretical positions are indicative of tensile strain in the as-deposited ZnO films. Shifts toward theoretical unstrained positions are observed in the irradiated films, which indicates partial relaxation. Raman spectra also indicate increase in oxygen vacancies (VO) and zinc interstitial defects (Zni) compared to the control sample. Additionally, transient photocurrent measurements performed on each sample at different temperatures showed up to 2× increase in photocurrent decay time constants for irradiated samples vs the control. This persistent photoconductive behavior is linked to the activation of electron and hole traps near the surface, and to the desorption and reabsorption of O2 molecules on the ZnO surface under the influence of UV light. Using an Arrhenius model, trap activation energies were extracted and, by comparing with known energies from the literature, the dominant defects contributing to persistent photoconductivity for each irradiation condition were identified. The persistence of differences in photocurrent transients between different samples months after irradiation indicates that the defects introduced by the suppression of thermally activated dynamic annealing processes have a long-term deleterious effect on device performance.

Heuser, Thomas A. (ORCID:0000000225642400)↗
DOE OSTI2021

Hydrophobic Molecule Monolayer Brush-Tethered Zinc Anodes for Aqueous Zinc Batteries

Aqueous zinc batteries are of great interest as a rechargeable energy storage system, particularly owing to the low cost and high safety of aqueous electrolytes, as well as the high capacity of zinc anodes. Unfortunately, the wide commercialization of aqueous zinc batteries is impeded by the irreversible water reduction and irregular zinc evolution issues on the anode side. Hereby, a hydrophobic and ultrathin polystyrene molecule brush layer is tethered onto the surface of zinc metal anodes to tackle the above limitations. Here, experimental investigations reveal that the waterproof artificial layer can sustain fast interfacial ionic transportation, minimize hydrogen evolution, and smoothen Zn deposition, thus conferring enhanced electrochemical performance to the as-protected Zn anode in both symmetric Zn//Zn cells and Zn//LiV 3 O 8 full cells.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS2012

Blocking contacts for N-type cadmium zinc telluride

A process for applying blocking contacts on an n-type CdZnTe specimen includes cleaning the CdZnTe specimen; etching the CdZnTe specimen; chemically surface treating the CdZnTe specimen; and depositing blocking metal on at least one of a cathode surface and an anode surface of the CdZnTe specimen.

Stahle, Carl M.↗
DOE OSTI2024

Physics-Based Continuum Modeling for an Aqueous Rechargeable Zn/MnO 2 Battery

This study introduces a framework for modeling the aqueous Zn/MnO 2 rechargeable battery. A reaction system and a physics-based continuum model are proposed based on two reaction types, one involving insertion and the second related to dissolution and deposition of a solid reaction product. The model, fitted to empirical data, predicts voltage behavior and capacity limitations during cycling, identifying electrolytic zinc depletion as a limiting mechanism, depending on the original cell construction. The research suggests the need for further material characterization and reaction analysis, which will advance our understanding and facilitate the development of grid-scale energy storage solutions.

Electrochemistry↗
DOE OSTI2021

DEVELOPMENT OF STABLE ANODE AND CATHODE MATERIALS FOR RECHARGEABLE BATTERIES

Batteries have been employed in a variety of applications, such as portable electronics, electric vehicles (EVs), and stationary energy storage to preserve energy from other renewable sources (like wind or solar energy). The ultimate goal is to develop high energy density, long life span, better safety, and low cost of the batteries. However, current commercialized batteries (like lead-acid, zinc-alkaline, lithium-ion batteries (LIBs)) could not fulfill all the demands of diversified applications. LIBs predominate the market because of their high energy density. To achieve a higher capacity of the cell, high-nickel layered (Ni > 90%) cathode materials are promising candidates since they compose high specific capacity and discharge voltage. In chapter 1, an introduction to cell energy density and the development of high-nickel layered cathode materials along with associated obstacles of poor cycling stability and thermal stability have been discussed. Associated works like doping or surface coating have also been mentioned in this section. In chapter 2, Al doping in high-nickel layered cathode materials to enhance the structural and thermal stability was introduced. Uniform incorporation of Al doping is achieved by mechanical fusion and calcination processes. The Al doping not only decreased the Li/Ni mixing ratio but also enhance the thermal resistance to oxygen evolution because of strong Al-O bonding, which leads to elevated electrochemical and thermal stability. In chapter 3, TiN is implemented as a Ti dopant for high-nickel layered cathode materials to improve the electrochemical performance in the LIBs. The Ti not only diffused within the bulk structure but also formed segregation on the surface, which improved the structural stability and led to better cycling performance. Although LIBs deliver high energy density, safety concerns of flammable organic electrolytes have not been resolved yet. Therefore, the aqueous rechargeable zinc-ion batteries (ZIB) have been praised for their safe, low-cost, eco-friendly stationary energy storage, which is considered as a complementary system to LIBs. In chapter 4, the mechanism, advantages, and challenges of ZIBs would be given and the strategies for solving the zinc metal anode issues have been discussed in this section. In chapter 5, a polymer coating method was reported to facilitate Zn deposition/ stripping by coordination with Zn2+ and prevented direct contact with aqueous electrolyte to block corrosion side-reactions. With this coating, a boost in a lifetime (up to 400 hours) and lower polarization under extremely high current conditions (10 mA cm-2) have been achieved in repeated Zn deposition/ stripping cycling.

25 ENERGY STORAGE↗
NASA NTRS1972

Pulsed metallic-plasma generators.

A pulsed metallic-plasma generator is described which utilizes a vacuum arc as the plasma source. The arc is initiated on the surface of a consumable cathode which can be any electrically conductive material. Ignition is accomplished by using a current pulse to vaporize a portion of a conductive film on the surface of an insulator separating the cathode from the ignition electrode. The film is regenerated during the ensuing arc. Over 100 million ignition cycles have been accomplished by using four 0.125-in. diameter zinc cathodes operating in parallel and high-density aluminum-oxide insulators. Among the applications being investigated for the generator are metal deposition, vacuum pumping, electric propulsion, and high-power dc arc interruption.

Gilmour, A. S., Jr.↗
NASA NTRS2005

Chemically Deposited Thin-Film Solar Cell Materials

We have been working on the development of thin film photovoltaic solar cell materials that can be produced entirely by wet chemical methods on low-cost flexible substrates. P-type copper indium diselenide (CIS) absorber layers have been deposited via electrochemical deposition. Similar techniques have also allowed us to incorporate both Ga and S into the CIS structure, in order to increase its optical bandgap. The ability to deposit similar absorber layers with a variety of bandgaps is essential to our efforts to develop a multi-junction thin-film solar cell. Chemical bath deposition methods were used to deposit a cadmium sulfide (CdS) buffer layers on our CIS-based absorber layers. Window contacts were made to these CdS/CIS junctions by the electrodeposition of zinc oxide (ZnO). Structural and elemental determinations of the individual ZnO, CdS and CIS-based films via transmission spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy and energy dispersive spectroscopy will be presented. The electrical characterization of the resulting devices will be discussed.

Raffaelle, R.↗
DOE OSTI2020

Stable metal anodes enabled by a labile organic molecule bonded to a reduced graphene oxide aerogel

Significance Rechargeable batteries based on metal anodes are highly desirable due to their high energy density. However, the electrochemical interface is generally not favorable for metal deposition, resulting in dendritic metal growth and an unstable solid–electrolyte interphase (SEI). We altered the interface using a labile organic molecule, benzenesulfonyl fluoride. This molecule was bonded to the surface of a reduced graphene oxide aerogel, which not only guides uniform metal deposition but also enables formation of a stable SEI layer. The lithium metal batteries showed stable cycling and excellent tolerance to low-temperature operation. Stable sodium and zinc anodes were also realized, demonstrating the versatility of this concept.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2012

Low TCR nanocomposite strain gages

A high temperature thin film strain gage sensor capable of functioning at temperatures above 1400.degree. C. The sensor contains a substrate, a nanocomposite film comprised of an indium tin oxide alloy, zinc oxide doped with alumina or other oxide semiconductor and a refractory metal selected from the group consisting of Pt, Pd, Rh, Ni, W, Ir, NiCrAlY and NiCoCrAlY deposited onto the substrate to form an active strain element. The strain element being responsive to an applied force.

Gregory, Otto J.↗
DOE OSTI2026

Zinc treatment to enhance nickel electrode performance for liquid alkaline water electrolyzers

Raney Ni treatment is introduced to the surface of Ni mesh anode electrodes, enhancing liquid alkaline water electrolyzer performance. The surface of the Ni mesh is alloyed with Zn, deposited by either an aqueous infiltration of Zn salt or direct reaction with Zn foil. The extent of alloying is controlled by a heat treatment step. For both processes, fine porosity and enhanced surface area are obtained after leaching the Zn out of the surface alloy layer. The observed electrode surface structure and performance is quite sensitive to the thermal treatment temperature. The enhanced surface area improves full cell performance by 90 mV for infiltrated Zn treated at 600 °C and by 185 mV for Zn foil reacted at 425 °C (at 2 A cm −2 and 80 °C). In conclusion, the Zn treatment methods produce stable operating performance, exhibiting no decay after 150 h for the infiltrated Zn treated at 600 °C, and a decay rate of 4.6 μV h −1 over 100 h for the Zn foil reacted at 425 °C (at 1 A cm −2 and 80 °C).

LAWE↗
NASA NTRS1982

Electro Processing Research

Electroprocessing which is concerned with fluid dynamics of the electroreduction process to determine how it may be modified to improve the quality of the deposit was studied. Experimental techniques are used in this research. These techniques include laser Schlieren photography, laser Doppler velocimetry, and frequency spectrum analysis. Projects involve fluid flow studies of zinc plating in aqueous and molten salt electrolytes, study of cell design for magnesium chlorides electrolysis, digital signal analysis of manganese electrodeposition in molten chlorides, and electroplating of molybdenum from low melting salts. It is anticipated that the use of refractory metals as constructed materials in engineering will increase. Their electrodeposition from molten salt electrolytes is important in the extraction metallurgy of refractory metals.

Source record↗
NASA NTRS2001

Synthesis of ZnO:As Films Using Off-Axis Sputtering Deposition

As a novel oxide semiconductor material, ZnO is interesting for use in many applications. For fabricating electronic devices, it is important to have n- and p- type ZnO materials. Arsenic has been proven to be one of the p-type dopants for ZnO materials. However, information in studying the ZnAsO ternary compound films has been scarce. In order to investigate the morphology, structure and electrical properties of ZnAsO ternary compounds, ZnO:As films have been synthesized using off-axis sputtering deposition on various substrates including (100) Si and (0001) sapphire crystals. Films are grown under various growth conditions. ZnO:As targets with the atomic weight ratios of arsenic to zinc from 0.01 to 0.10 are used for film synthesis. The growth temperatures and pressures range from 350 to 550C and 5 to 150 mTorr, respectively. Argon to oxygen gas ratio for film growth is varied to examine the film quality as well. Film surface morphology, crystal structure, and compositions, are characterized using atomic force microscopy, x-ray diffraction, and energy dispersive spectroscopy, respectively. The compositions of target material and ZnO:As films grown under various conditions are then assessed. The electrical properties were also measured. The detail of these measurements will be discussed in the presentation.

Zhu, Shen↗
DOE OSTI2023

Tungsten Electrodeposition

Tungsten is a refractory metal with a very high melting point (3422 °C), hardness (7.5 on Mohs hardness scale), and chemical resistance, making it useful in applications with extreme conditions. Electrodeposition is an attractive technique for coating metals because of its scalability and applicability to objects of intricate shape, though tungsten electrodeposition remains difficult. Some multi-step methods first coat either a sacrificial metal such as zinc or a layer of tungsten oxide which is then converted to metallic tungsten with WCl6 immersion (i.e. a redox replacement reaction) or heating in a reducing atmosphere, respectively. Single step deposition would save time and money, making it more viable on an industrial scale. Most reports detailing direct tungsten electrodeposition use molten salts which are energy intensive, hazardous, and difficult to maintain. Few reports have demonstrated single-step, low temperature electrodeposition deposition of tungsten in atmosphere. An article from 1931 reports successful metal tungsten electrodeposition from a highly basic sodium tungstate solution, though the authors reported very low current efficiency (<1%) and required heating to 80+ °C to obtain metallic films. This report outlines our attempts to electroplate tungsten from various solutions on different electrode materials, none of which succeeded. Our intent is to guide future researchers at Los Alamos National Laboratory that would attempt tungsten electrodeposition.

36 MATERIALS SCIENCE↗
NASA NTRS1990

Investigation of the asymmetric misfit dislocation morphology in epitaxial layers with the zinc-blende structure

The source of the asymmetry in the dislocation morphology exhibited in the epitaxial growth of compound semiconductors on (100) was investigated. A thickness wedge of p- and n-type GaAs(0.95)P(0.05) was grown on GaAs by metalorganic chemical vapor deposition, and the effect of misorientation on the resolved shear stress for each slip system was calculated and eliminated as the source of the asymmetry. Another potential source of asymmetry, the thickness gradient, was also eliminated. Results show that the substrate misorientation and the thickness gradient do not significantly contribute to the asymmetry and that the dominant contributor to the asymmetry of misfit dislocations in the (001) epitaxial interface can be attributed to the differences in the Peierls barriers between the two types of dilocations in GaAsP/GaAs.

Fox, Bradley A.↗
DOE OSTI2021

Ultrafast hole transfer from monolayer ReS 2 to thin-film F 8 ZnPc

We report a combined experimental and computational study on the charge transfer properties of heterostructures formed by monolayer 1T’-ReS 2 and fluorinated zinc phthalocyanine, F 8 ZnPc. Two-dimensional (2D) ReS 2 monolayer flakes were exfoliated from bulk crystals, and a F 8 ZnPc film with a thickness of 4 nm was thermally deposited on ReS 2 . Density functional theory shows that the two materials form a type-II band alignment. In transient absorption measurements, photocarriers are selectively excited in ReS 2 and monitored in F 8 ZnPc. Here, we found that holes in ReS 2 can transfer to F 8 ZnPc on a time scale shorter than 0.35 ps. The transferred holes have a long lifetime in F 8 ZnPc on the order of 1 ns, confirming the lack of electron transfer. The efficient charge transfer from a 1T’ transition metal dichalcogenide monolayer to an organic semiconductor illustrates the feasibility of developing 2D/organic heterostructures with in-plane anisotropic electronic and optoelectronic properties.

2D materials↗
NASA NTRS1988

Technologies for protection of the Space Station power system surfaces in atomic oxygen environment

Technologies for protecting Space Station surfaces from degradation caused by atomic oxygen are discussed, stressing protection of the power system surfaces. The Space Station power system is described and research concerning the solar array surfaces and radiator surfaces is examined. The possibility of coating the solar array sufaces with a sputter deposited thin film of silicon oxide containing small concentrations of polytetrafluoroethylene is presented. Hexamethyldisiloxane coating for these surfaces is also considered. For the radiator surfaces, possible coatings include silver teflon thermal coating and zinc orthotitanate.

Nahra, Henry K.↗
DOE OSTI2026

Nitrogen p-type doping in polycrystalline zinc selenide telluride films

Nitrogen-doped zinc selenide telluride (N:ZnSe x Te 1−x ) is of interest because it is one of the widest-gap II–VI semiconductors that can still be doped p-type with reasonably high hole concentrations. We sputter deposit N:ZnSe x Te 1−x films, varying Se/(Se + Te), or x, from 0 to 0.7, N 2 flow rate from 0.25 to 0.75 sccm, and substrate temperature from 250 to 370 °C. Increasing x from 0 to 0.39 at the optimal temperature of 370 °C and N 2 flow rate of 0.5 sccm leads to 1.3 atomic % nitrogen incorporation and wurtzite phase stabilization. Such doping and alloying increases hole concentration from 3 × 10 18 cm −3 to 3 × 10 19 cm −3 , although mobility drops from 0.4 to 0.02 cm 2 V −1 s −1 . Our sputtered N:ZnSe 0.38 Te 0.62 has an absorption onset 0.1 eV greater than the ZnTe value of 1.87 eV. Increasing x from 0 to 0.51 enhances transmittance by moving absorption onset from 1.87 to 2.11 eV with diminished band gap bowing likely due to disorder, and increases the work function from 5.12 to 5.42 eV. This combination of tunable properties makes sputtered N:ZnSe x Te 1−x desirable for transparent p-type contacts in polycrystalline Cd(Se,Te) optoelectronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗