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Results for “ION IMPLANTATION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,081 records · Page 60
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Mechanical properties of ion-beam-textured surgical implant alloys

An electron-bombardment Hg ion thruster was used as an ion source to texture surfaces of materials used to make orthopedic and/or dental prostheses or implants. The materials textured include 316 stainless steel, titanium-6% aluminum, 4% vanadium, and cobalt-20% chromium, 15% tungsten. To determine the effect of ion texturing on the ultimate strength and yield strength, stainless steel and Co-Cr-W alloy samples were tensile tested to failure. Three types of samples of both materials were tested. One type was ion-textured (the process also heats each sample to 300 C), another type was simply heated to 300 C in an oven, and the third type was untreated. Stress-strain diagrams, 0.2% offset yield strength data, total elongation data, and area reduction data are presented. Fatigue specimens of ion textured and untextured 316 stainless steel and Ti-6% Al-4% V were tested. Included as an ion textured sample is a Ti-6% Al-4% V sample which was ion machined by means of Ni screen mask so as to produce an array of 140 mu m x 140 mu m x 60 mu m deep pits. Scanning electron microscopy was used to characterize the ion textured surfaces.

Weigand, A. J.↗
DOE OSTI2023

Analysis of position-dependent cavity parameters in irradiated metals to obtain insight on fundamental defect migration phenomena

Motion of point defects is a fundamental process that governs microstructure and properties of materials. Here, we examine the near-surface and grain boundary cavity swelling depth profiles in neutron- and ion-irradiated simple metals (Cu, Ni, and Fe-Cr) and investigate diffusional broadening of implanted Ni ions in Fe-Cr alloys. Vacancy migration energies and radiation-enhanced diffusion were experimentally estimated. Cavity denuded zone widths near planar sinks are shown to be dependent on temperature, damage rate, balance of point defects and sinks, and vacancy migration energies. An enhanced cavity swelling zone adjacent to the void-denuded zone was observed in specimens with low to moderate sink strength and interpreted as evidence of 1D gliding interstitial clusters. Radiation-enhanced diffusional broadening of implanted Ni ions (at 400–550 °C) in Fe and Fe-Cr was up to 250 nm toward the surface, which leads to a much broader near-peak-damage region where cavity swelling is suppressed. Diffusional broadening of implanted ions is calculated to be similarly pronounced for self-ion irradiations, particularly near the peak and higher swelling temperature regimes. Adequately high ion energies (~8–15 MeV) are recommended for ion-irradiation studies to provide a sufficiently broad midrange safe analysis region with minimized surface and injected ion effects.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Temperature dependences of the photoluminescence intensities of centers in silicon implanted with erbium and oxygen ions

Low-temperature photoluminescence in n-Cz-Si after the implantation of erbium ions at an elevated temperature and subsequent implantation of oxygen ions at room temperature is studied. So-called X and W centers formed from self-interstitial silicon atoms, H and P centers containing oxygen atoms, and Er centers containing Er{sup 3+} ions are observed in the photoluminescence spectra. The energies of enhancing and quenching of photoluminescence for these centers are determined. These energies are determined for the first time for X and H centers. In the case of P and Er centers, the values of the energies practically coincide with previously published data. For W centers, the energies of the enhancing and quenching of photoluminescence depend on the conditions of the formation of these centers.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Studying localized corrosion using liquid cell transmission electron microscopy

Using liquid cell transmission electron microscopy (LCTEM), localized corrosion of Cu and Al thin films immersed in aqueous NaCl solutions was studied. We demonstrate that potentiostatic control can be used to initiate pitting and that local compositional changes, due to focused ion beam implantation of Au + ions, can modify the corrosion susceptibility of Al films. Likewise, a discussion on strategies to control the onset of pitting is also presented.

36 MATERIALS SCIENCE↗
NASA NTRS1986

Xe isotopic fractionation in a cathodeless glow discharge

Results are reported on the isotopic composition of Xe processed in cathodeless glow discharges in rarefied air at pressures of 20-40 microns Hg, in the presence of activated charcoal and in empty pyrex containers. Residual gas phase Xe and trapped Xe were found to be fractionated, with the trapped Xe fractionated up to 1 percent per amu. A model is presented for the fractionating process in which Xe ions are simultaneously implanted and sputtered from substrate material, with a mass dependence favoring retention of the heavy isotopes in the substrate. Results of the investigation show that plasma synthesis of carbonaceous material is unnecessary for producing Xe fractionations, and that the fractionations observed in previous synthesis experiments are probably due to implantation of ions into the synthesized material.

Bernatowicz, T. J.↗
DOE OSTI2021

In situ transmission electron microscopy with dual ion beam irradiation and implantation

To study the helium effects and their interactions with displacement damage in irradiated materials, an in situ dual-ion beam irradiation capability with transmission electron microscopy was recently established at the IVEM-Tandem Facility at Argonne National Laboratory. Pure nickel was irradiated in situ individually with 1 MeV Kr ions for displacement damage study, 16 keV He ions for helium implantation, and simultaneously with 1 MeV Kr ions and 16 keV He ions at the rate of 1 at.% He/dpa to study the interaction of helium and displacement damage at 500 degrees C. Helium bubbles were formed and segregated within dislocation loops during the He implantation experiment and no bubbles were observed outside the loops. The loop size increased with increasing helium concentration. In contrast, helium bubbles were formed uniformly in the matrix when nickel was irradiated simultaneously with 1 MeV Kr ions and 16 keV He ions. Overall, it is suggested that the uniformly-distributed defect clusters formed under 1 MeV Kr ion irradiation serve as trapping sites of helium atoms resulting in homogeneous nucleation of helium bubbles under the dualion beam irradiation in nickel.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Helium bubble nucleation and growth in alloy HT9 through the use of in situ TEM: Sequential he-implantation and heavy-ion irradiation versus dual-beam irradiation

The formation of He bubbles in Ferritic/Martensitic steel HT9 is investigated through the use of in situ Transmission Electron Microscopy coupled with He implantation and heavy ion irradiation. Of particular interest is the effect of increasing He appm/dpa ratio on the formation and growth of the bubbles, as well as the effect of the sequential order of ion irradiation i.e. He-pre-implantation followed by heavy-ion irradiation versus true dual-beam irradiation. Finally, the role of He is discussed.

Duemmler, Kai↗
DOE OSTI2014

Strong vortex core pinning and Barkhausen-free magnetization response in thin Permalloy disks induced by implantation of 1 × 10{sup 4} Ga{sup +} ions

Artificial vortex core pinning sites are induced in thin Permalloy disks by point exposure to as few as 10 000 ions from a focused Ga{sup +} beam. These pinning sites yield a first-order change in the magnetization response of the disk. A single site can keep the vortex core pinned over an applied field range comparable to the vortex annihilation field of the unaltered disk. Several widely separated sites can work together to keep the core pinned in one place, while the Barkhausen effect is eliminated from the magnetization curve over a range approaching the saturation moment of the disk.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Laser produced streams of Ge ions accelerated and optimized in the electric fields for implantation into SiO{sub 2} substrates

Ge crystals were prepared by means of laser-induced ion implantation technique. A Nd:YAG pulsed laser (repetition rate: 10 Hz; pulse duration: 3.5 ns; pulse energy: {approx}0.5 J) was used both as an ion source and to carry out the ablation processes. The optimization of the laser-generated ion beam parameters in a broad energy and current density range has been obtained controlling the electrostatic field parameters. Numerical simulations of the focusing system, performed adopting an OPERA 3D code, and an investigation of the ion characteristics, using the ion time-of-flight method, have allowed to optimize the preparation parameters. The structural properties of the samples were investigated by means of x-ray photoelectron, micro-Raman spectroscopies, and scanning electron microscopy techniques. Experimental results show that, by appropriately varying the ion implantation parameters and by a post-preparation annealing treatment, it is possible to achieve the development of a micrometer-sized crystalline Ge phase and/or an amorphous one.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

The effect of helium on cavity swelling in dual-ion irradiated Fe and Fe-10Cr ferritic alloys

We report Ferritic-martensitic (FM) steels for in-vessel components in proposed fusion reactors are expected to suffer from high levels of displacement damage and helium (He) generation by neutron transmutation. However, a thorough understanding of the He synergistic effects on the cavity swelling in FM steels is still not well established. To gain fundamental insights into the He effect on cavity swelling, high purity Fe and Fe-10 wt.% Cr ferritic model alloys were irradiated with 8 MeV Ni ions and co-implanted He ions at 400 to 550 °C up to 30 displacements per atom (dpa) with He implantation rates of 0.1, 10 and 50 appm He/dpa. The current study focuses on the 50 appm He/dpa, 500 °C behavior vs. 0.1 and 10 appm He/dpa. Irradiation-induced defects, including cavities, dislocation loops, and dislocation networks were characterized using transmission electron microscopy (TEM). In the grain interior, a bimodal cavity size distribution was observed in the 10 and 50 appm He/dpa samples, but not for 0.1 appm He/dpa. Cavity swelling was maximized at intermediate He implantation rates of ~10 appm He/dpa for both ion-irradiated Fe and Fe-10Cr alloys. The cavity swelling behavior as a function of He implantation rate appears to be controlled by the He/dpa-dependent variation of cavity sink strengths. Treating small bubbles as biased sinks for interstitial absorption can significantly increase the ratio of biased to unbiased sink strengths (Q) and results in maximized cavity swelling for a Q ratio close to one.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Composition and Structure of Ga{sub 1–} {sub x}Na{sub x}As Nanolayers Produced near the GaAs Surface by Na{sup +} Implantation

The composition and structure of nanodimensional Ga{sub 1–} {sub x}Na{sub x}As phases produced by implantation of Na{sup +} ions into the near-surface area of GaAs have been studied by Auger electron spectroscopy and fast electron diffraction. It has been found that the thickness of the ternary epitaxial layer is 10–12 nm for ion energy E{sub 0} = 20 keV. The composition of the three-layer nanosystems is GaAs–Ga{sub 0.5}Na{sub 0.5}As–GaAs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Effect of implanted species on thermal evolution of ion-induced defects in ZnO

Implanted atoms can affect the evolution of ion-induced defects in radiation hard materials exhibiting a high dynamic annealing and these processes are poorly understood. Here, we study the thermal evolution of structural defects in wurtzite ZnO samples implanted at room temperature with a wide range of ion species (from {sup 11}B to {sup 209}Bi) to ion doses up to 2 × 10{sup 16} cm{sup −2}. The structural disorder was characterized by a combination of Rutherford backscattering spectrometry, nuclear reaction analysis, and transmission electron microscopy, while secondary ion mass spectrometry was used to monitor the behavior of both the implanted elements and residual impurities, such as Li. The results show that the damage formation and its thermal evolution strongly depend on the ion species. In particular, for F implanted samples, a strong out-diffusion of the implanted ions results in an efficient crystal recovery already at 600 °C, while co-implantation with B (via BF{sub 2}) ions suppresses both the F out-diffusion and the lattice recovery at such low temperatures. The damage produced by heavy ions (such as Cd, Au, and Bi) exhibits a two-stage annealing behavior where efficient removal of point defects and small defect clusters occurs at temperatures ∼500 °C, while the second stage is characterized by a gradual and partial annealing of extended defects. These defects can persist even after treatment at 900 °C. In contrast, the defects produced by light and medium mass ions (O, B, and Zn) exhibit a more gradual annealing with increasing temperature without distinct stages. In addition, effects of the implanted species may lead to a nontrivial defect evolution during the annealing, with N, Ag, and Er as prime examples. In general, the obtained results are interpreted in terms of formation of different dopant-defect complexes and their thermal stability.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗