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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,081 records · Page 60
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Multi-scale modelling to relate beryllium surface temperature, deuterium concentration and erosion in fusion reactor environment

Beryllium (Be) has been chosen as the plasma-facing material for the main wall of ITER, the next generation fusion reactor. Identifying the key parameters that determine Be erosion under reactor relevant conditions is vital to predict the ITER plasma-facing component lifetime and viability. To date, a certain prediction of Be erosion, focusing on the effect of two such parameters, surface temperature and D surface content, has not been achieved. In this paper, we develop the first multi-scale KMC-MD modeling approach for Be to provide a more accurate database for its erosion, as well as investigating parameters that affect erosion. First, we calculate the complex relationship between surface temperature and D concentration precisely by simulating the time evolution of the system using an object kinetic Monte Carlo (OKMC) technique. These simulations provide a D surface concentration profile for any surface temperature and incoming D energy. We then describe how this profile can be implemented as a starting configuration in molecular dynamics (MD) simulations. We finally use MD simulations to investigate the effect of temperature (300–800 K) and impact energy (10–200 eV) on the erosion of Be due to D plasma irradiations. The results reveal a strong dependency of the D surface content on temperature. Increasing the surface temperature leads to a lower D concentration at the surface, because of the tendency of D atoms to avoid being accommodated in a vacancy, and de-trapping from impurity sites diffuse fast toward bulk. At the next step, total and molecular Be erosion yields due to D irradiations are analyzed using MD simulations. The results show a strong dependency of erosion yields on surface temperature and incoming ion energy. The total Be erosion yield increases with temperature for impact energies up to 100 eV. However, increasing temperature and impact energy results in a lower fraction of Be atoms being sputtered as BeD molecules due to the lower D surface concentrations at higher temperatures. Finally, these findings correlate well with different experiments performed at JET and PISCES-B devices.

36 MATERIALS SCIENCE↗
NASA NTRS1991

Environmental test program for superconducting materials and devices

This report is divided into two parts. The first dealing with work involved with Clemson University and the second with the results from Westinghouse/Savannah River. Both areas of work involved low noise, low thermal conductivity superconducting grounding links used in the NASA-sponsored Spectroscopy of the Atmosphere using Far Infrared Emission (SAFIRE) Project. Clemson prepared the links from YBa2Cu3O(7-x) superconductor tape that was mounted on a printed circuit board and encapsulated with epoxy resin. The Clemson program includes temperature vs. resistance, liquid nitrogen immersion, water immersion, thermal cycling, humidity, and radiation testing. The evaluation of the links under a long term environmental test program is described. The Savannah River program includes gamma irradiation, vibration, and long-term evaluation. The progress made in these evaluations is discussed.

Haertling, Gene↗
DOE OSTI2013

Five-Year Outcomes, Cosmesis, and Toxicity With 3-Dimensional Conformal External Beam Radiation Therapy to Deliver Accelerated Partial Breast Irradiation

Purpose: To report the interim results from a study comparing the efficacy, toxicity, and cosmesis of breast-conserving treatment with accelerated partial breast irradiation (APBI) or whole breast irradiation (WBI) using 3-dimensional conformal external beam radiation therapy (3D-CRT). Methods and Materials: 102 patients with early-stage breast cancer who underwent breast-conserving surgery were randomized to receive either WBI (n=51) or APBI (n=51). In the WBI arm, 48 Gy was delivered to the whole breast in daily fractions of 2 Gy, with or without additional 10 Gy to the tumor bed. In the APBI arm, patients received 37.5 Gy in 3.75 Gy per fraction delivered twice daily. Toxicity results were scored according to the Radiation Therapy Oncology Group Common Toxicity Criteria. Skin elasticity was measured using a dedicated device (Multi-Skin-Test-Center MC-750-B2, CKelectronic-GmbH). Cosmetic results were assessed by the physician and the patients as good/excellent, regular, or poor. Results: The median follow-up time was 5 years. No local recurrences were observed. No significant differences in survival rates were found. APBI reduced acute side effects and radiation doses to healthy tissues compared with WBI (P<.01). Late skin toxicity was no worse than grade 2 in either group, without significant differences between the 2 groups. In the ipsilateral breast, the areas that received the highest doses (ie, the boost or quadrant) showed the greatest loss of elasticity. WBI resulted in a greater loss of elasticity in the high-dose area compared with APBI (P<.05). Physician assessment showed that >75% of patients in the APBI arm had excellent or good cosmesis, and these outcomes appear to be stable over time. The percentage of patients with excellent/good cosmetic results was similar in both groups. Conclusions: APBI delivered by 3D-CRT to the tumor bed for a selected group of early-stage breast cancer patients produces 5-year results similar to those achieved with conventional WBI.

62 RADIOLOGY AND NUCLEAR MEDICINE↗
DOE OSTI2016

Chapter 10: CPV Multijunction Solar Cell Characterization

Characterization of solar cells can be divided into two types: the first is measurement of electrooptical semiconductor device parameters, and the second is determination of electrical conversion efficiency. This chapter reviews the multijunction concepts that are necessary for understanding Concentrator photovoltaic (CPV) cell characterization techniques, and describes how CPV efficiency is defined and used. For any I-V measurement of a multijunction cell, the sun simulator spectrum has to be adjusted in a way that all junctions generate the same photocurrent ratios with respect to each other as under reference conditions. The chapter discusses several procedures for spectral irradiance adjustments of solar simulators, essential for multijunction measurements. It overviews the light sources and optics commonly used in simulators for CPV cells under concentration. Finally, the chapter talks about the cell area, quantum efficiency (QE), and current-voltage (I-V) curve measurements that are needed to characterize cells as a function of irradiance.

14 SOLAR ENERGY↗
NASA NTRS1995

Off-line-locked laser diode species monitor system

An off-line-locked laser diode species monitor system includes: reference means for including at least one known species having a first absorption wavelength; a laser source for irradiating the reference means and at least one sample species having a second absorption wavelength differing from the first absorption wavelength by a predetermined amount; means for locking the wavelength of the laser source to the first wavelength of the at least one known species in the reference means; a controller for defeating the means for locking and for displacing the laser source wavelength from said first absorption wavelength by said predetermined amount to the second absorption wavelength; and a sample detector device for determining laser radiation absorption at the second wavelength transmitted through the sample to detect the presence of the at least one sample species.

Lee, Jamine↗
DOE OSTI2023

Low-Frequency Noise and Deep Level Transient Spectroscopy in n-p-n Si Bipolar Junction Transistors Irradiated with Si Ions

The properties of defects in n-p-n Si bipolar junction transistors (BJTs) caused by 17 MeV Si ions are investigated via current-voltage, low-frequency noise, and deep-level transient spectroscopy (DLTS) measurements. Four prominent radiation-induced defects in the base-collector junction of these transistors are identified via DLTS. At least two defect levels are observed in temperature-dependent low-frequency 1/ f noise measurements, one that is similar to a prominent defect in DLTS and another that is not. Defect microstructures are discussed. Here our results show that DLTS and 1/ f noise measurements can provide complementary information about defects in linear bipolar devices.

42 ENGINEERING↗
DOE OSTI2017

Using defects to store energy in materials – a computational study

Energy storage occurs in a variety of physical and chemical processes. In particular, defects in materials can be regarded as energy storage units since they are long-lived and require energy to be formed. Here, we investigate energy storage in non-equilibrium populations of materials defects, such as those generated by bombardment or irradiation. We first estimate upper limits and trends for energy storage using defects. First-principles calculations are then employed to compute the stored energy in the most promising elemental materials, including tungsten, silicon, graphite, diamond and graphene, for point defects such as vacancies, interstitials and Frenkel pairs. We find that defect concentrations achievable experimentally (~0.1–1 at.%) can store large energies per volume and weight, up to ~5 MJ/L and 1.5 MJ/kg for covalent materials. Engineering challenges and proof-of-concept devices for storing and releasing energy with defects are discussed. Our work demonstrates the potential of storing energy using defects in materials.

25 ENERGY STORAGE↗
DOE OSTI2016

Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance

Here, total ionizing dose results are provided, showing the effects of different threshold adjust implant processes and irradiation bias conditions of 14-nm FinFETs. Minimal radiation-induced threshold voltage shift across a variety of transistor types is observed. Off-state leakage current of nMOSFET transistors exhibits a strong gate bias dependence, indicating electrostatic gate control of the sub-fin region and the corresponding parasitic conduction path are the largest concern for radiation hardness in FinFET technology. The high-Vth transistors exhibit the best irradiation performance across all bias conditions, showing a reasonably small change in off-state leakage current and Vth, while the low-Vth transistors exhibit a larger change in off-state leakage current. The “worst-case” bias condition during irradiation for both pull-down and pass-gate nMOSFETs in static random access memory is determined to be the on-state (Vgs = Vdd). We find the nMOSFET pull-down and pass-gate transistors of the SRAM bit-cell show less radiation-induced degradation due to transistor geometry and channel doping differences than the low-Vth transistor. Near-threshold operation is presented as a methodology for reducing radiation-induced increases in off-state device leakage current. In a 14-nm FinFET technology, the modeling indicates devices with high channel stop doping show the most robust response to TID allowing stable operation of ring oscillators and the SRAM bit-cell with minimal shift in critical operating characteristics.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2022

Radiation-Hardened GaN-Based Wireless Communications Architectures for Terrestrial Nuclear Reactor Sensing and Instrumentation

Wireless technologies have become increasingly common in applications, ranging from close proximity inductive communication links in medical devices to short-range Bluetooth and WiFi communications and longer-range cellular communications. Nonetheless, these technologies are unsuitable for use in or around nuclear reactors due to the extreme radiation and temperatures inherent in these environments and their associated significant degradative effects on electronics hardware. However, recent work in wide bandgap– based electronics has shown promise for gallium nitride (GaN) as an emerging technology for the realization of practical wireless communications systems for use in harsh environments. This report presents initial progress on the development of wireless communications architectures designed specifically for nuclear reactor application, based on inherently radiation-hardened (rad-hard) GaN technology. Prior work on rad-hard analog communications topologies is reviewed, and several digital modulation and encoding schemes that utilize GaN-based electronics devices are newly proposed for application in reactor environments. Continuous-time and discrete-time system simulations were performed, and results are presented for the preliminary transmitter and receiver designs, respectively. In addition, an overview of a software-defined radio testbed, designed for communications protocol development, is provided. Future work will focus on implementing candidate radiation-resistant wireless architectures using a research AlGaN/GaN high electron mobility transistor (HEMT) integrated circuit process, which is available at the Ohio State University, and irradiation studies will be carried out to assess the true potential of this technology for reactor application.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
NASA NTRS1987

A geostationary imaging spectrometer TOMS instrument

One design for a geostationary Total Ozone Mapping Spectrometer (TOMS) with many desirable features is an imaging spectrometer. A preliminary study makes use of a 0.25 m Czerny-Turner spectrometer with which the Earth is imaged on a charge-coupled device (CCD) in dispersed light. The wavelength is determined by a movable grating which can be set arbitrarily by ground control. The signal integration time depends on wavelength but this system allows arbitrary timing by command. Special circumstances such as a requirement to track a low-lying sulfur dioxide cloud or a need to discriminate high level ozone from total ozone at midlatitudes could be obtained by adding a particular wavelength to the normally pre-programmed time sequence. The incident solar irradiance is measured by deploying a diffuser plate in the field of view. Individual detector elements correspond to scene elements in which the several wavelengths are serially sampled and the Earth radiance is compared to the incident sunlight. Thus the problem of uncorrelated drift of multiple detectors is removed.

Krueger, Arlin J.↗
NASA NTRS1980

Radiant energy to electric energy converter

Radiant energy is converted into electric energy by irradiating a capacitor including an ionic dielectric. The dielectric is a sintered crystal superionic conductor, e.g., lanthanum trifluoride, lanthanum trichloride, or silver bromide, so that a multiplicity of crystallites exist between electrodes of the capacitor. The radiant energy cyclically irradiates the dielectric so that the dielectric exhibits a cyclic photocapacitive like effect. Adjacent crystallites have abutting surfaces that enable the crystallites to effectively form a multiplicity of series capacitor elements between the electrodes. Each of the capacitor elements has a dipole layer only on or near its surface. The capacitor is initially charged to a voltage just below the dielectric breakdown voltage by connecting it across a DC source causing a current to flow through a charging resistor to the dielectric. The device can be utilized as a radiant energy detector or as a solar energy cell.

Sher, Arden↗
NASA NTRS2016

Performance and Radiation Tolerance of InAs/GaSb LWIR Detectors Based on CBIRD Design

We report our recent developments of antimonide based infrared photodetectors utilizing a complementary barrier infrared detector (CBIRD) design. The new generation of devices can operate close to zero bias with the same quantum efficiency as the initial design. 320x256 pixel long-wavelength infrared focal plane arrays utilizing optimized design have been demonstrated with 8.8 µm cutoff wavelength and noise equivalent differential temperature of 26 mK at operating temperature of 80 K for 300 K background and f/2 optics. As CBIRD detectors became valuable candidates for space-based instruments, question of their radiation tolerance became important. Here, we report our investigations of the proton irradiation effects on the photodetector performance.

heterostructure↗
DOE OSTI2021

Manipulating ferroelectric behaviors via electron-beam induced crystalline defects

Ferroelectric nanoplates are attractive for applications in nanoelectronic devices. Defect engineering has been an effective way to control and manipulate ferroelectric properties in nanoscale devices. Defects can act as pinning centers for ferroelectric domain wall motion, altering the switching properties and domain dynamics of ferroelectrics. However, there is a lack of detailed investigation on the interactions between defects and domain walls in ferroelectric nanoplates due to the limitation of previous characterization techniques, which impedes the development of defect engineering in ferroelectric nanodevices. In this study, we applied in situ biasing transmission electron microscopy to explore how dislocation loops, which were judiciously introduced into barium titanate nanoplates via electron beam irradiation, affect the motion of ferroelectric domain walls. The results show that the motion was dramatically suppressed by these localized defects, because of the local strain fields induced by the defects. Additionally, the pinning effect can be further enhanced by multiple domain walls embedded with defect arrays. These results indicate the possibility of manipulating domain switching in ferroelectric nanoplates via the electron beam.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS2016

Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets in a NAND Flash Memory

We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found that the single-event upset (SEU) cross section varied inversely with cumulative fluence. We attribute the effect to the variable upset sensitivities of the memory cells. Furthermore, the effect impacts only single cell upsets in general. The rate of multiple-bit upsets remained relatively constant with fluence. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, traditional SEE testing techniques may underestimate the on-orbit event rate for a device with variable upset sensitivity.

NAND flash memory↗
DOE OSTI2015

Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk. With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Stabilization of graphene nanopore

Graphene is an ultrathin, impervious membrane. The controlled introduction of nanoscale pores in graphene would lead to applications that involve water purification, chemical separation, and DNA sequencing. However, graphene nanopores are unstable against filling by carbon adatoms. Using aberration-corrected scanning transmission electron microscopy and density-functional calculations, we report that Si atoms stabilize graphene nanopores by bridging the dangling bonds around the perimeter of the hole. Si-passivated pores remain intact even under intense electron beam irradiation, and they were observed several months after the sample fabrication, demonstrating that these structures are intrinsically robust and stable against carbon filling. Theoretical calculations reveal the underlying mechanism for this stabilization effect: Si atoms bond strongly to the graphene edge, and their preference for tetrahedral coordination forces C adatoms to form dendrites sticking out of the graphene plane, instead of filling the nanopore. Our results provide a novel way to develop stable nanopores, which is a major step toward reliable graphene-based molecular translocation devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Morphology and Curie temperature engineering in crystalline La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films on Si by pulsed laser deposition

Of all the colossal magnetoresistant manganites, La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) exhibits magnetic and electronic state transitions above room temperature, and therefore holds immense technological potential in spintronic devices and hybrid heterojunctions. As the first step towards this goal, it needs to be integrated with silicon via a well-defined process that provides morphology and phase control, along with reproducibility. This work demonstrates the development of pulsed laser deposition (PLD) process parameter regimes for dense and columnar morphology LSMO films directly on Si. These regimes are postulated on the foundations of a pressure-distance scaling law and their limits are defined post experimental validation. The laser spot size is seen to play an important role in tandem with the pressure-distance scaling law to provide morphology control during LSMO deposition on lattice-mismatched Si substrate. Additionally, phase stability of the deposited films in these regimes is evaluated through magnetometry measurements and the Curie temperatures obtained are 349 K (for dense morphology) and 355 K (for columnar morphology)—the highest reported for LSMO films on Si so far. X-ray diffraction studies on phase evolution with variation in laser energy density and substrate temperature reveals the emergence of texture. Quantitative limits for all the key PLD process parameters are demonstrated in order enable morphological and structural engineering of LSMO films deposited directly on Si. These results are expected to boost the realization of top-down and bottom-up LSMO device architectures on the Si platform for a variety of applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Interaction of ultrashort laser pulses and silicon solar cells under short circuit conditions

Ultrashort pulse lasers are promising tools for numerous measurement purposes. Among other benefits their high peak powers allow for efficient generation of wavelengths in broad spectral ranges and at spectral powers that are orders of magnitude higher than in conventional light sources. Very recently this has been exploited for the establishment of sophisticated measurement facilities for electrical characterization of photovoltaic (PV) devices. As the high peak powers of ultrashort pulses promote nonlinear optical effects they might also give rise to nonlinear interactions with the devices under test that possibly manipulate the measurement outcome. In this paper, we present a comprehensive theoretical and experimental study of the nonlinearities affecting short circuit current (I{sub SC}) measurements of silicon (Si) solar cells. We derive a set of coupled differential equations describing the radiation-device interaction and discuss the nonlinearities incorporated in those. By a semi-analytical approach introducing a quasi-steady-state approximation and integrating a Green's function we solve the system of equations and obtain simulated I{sub SC} values. We validate the theoretical model by I{sub SC} ratios obtained from a double ring resonator setup capable for reproducible generation of various ultrashort pulse trains. Finally, we apply the model to conduct the most prominent comparison of I{sub SC} generated by ultrashort pulses versus continuous illumination. We conclude by the important finding that the nonlinearities induced by ultrashort pulses are negligible for the most common I{sub SC} measurements. However, we also find that more specialized measurements (e.g., of concentrating PV or Si-multijunction devices as well as highly localized electrical characterizations) will be biased by two-photon-absorption distorting the I{sub SC} measurement.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗