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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,081 records · Page 60
All sourcesNASA NTRSDOE OSTI
DOE OSTI2011

Potential profile near singularity point in kinetic Tonks-Langmuir discharges as a function of the ion sources temperature

A plasma-sheath transition analysis requires a reliable mathematical expression for the plasma potential profile {Phi}(x) near the sheath edge x{sub s} in the limit {epsilon}{identical_to}{lambda}{sub D}/l=0 (where {lambda}{sub D} is the Debye length and l is a proper characteristic length of the discharge). Such expressions have been explicitly calculated for the fluid model and the singular (cold ion source) kinetic model, where exact analytic solutions for plasma equation ({epsilon}=0) are known, but not for the regular (warm ion source) kinetic model, where no analytic solution of the plasma equation has ever been obtained. For the latter case, Riemann [J. Phys. D: Appl. Phys. 24, 493 (1991)] only predicted a general formula assuming relatively high ion-source temperatures, i.e., much higher than the plasma-sheath potential drop. Riemann's formula, however, according to him, never was confirmed in explicit solutions of particular models (e.g., that of Bissell and Johnson [Phys. Fluids 30, 779 (1987)] and Scheuer and Emmert [Phys. Fluids 31, 3645 (1988)]) since ''the accuracy of the classical solutions is not sufficient to analyze the sheath vicinity''[Riemann, in Proceedings of the 62nd Annual Gaseous Electronic Conference, APS Meeting Abstracts, Vol. 54 (APS, 2009)]. Therefore, for many years, there has been a need for explicit calculation that might confirm the Riemann's general formula regarding the potential profile at the sheath edge in the cases of regular very warm ion sources. Fortunately, now we are able to achieve a very high accuracy of results [see, e.g., Kos et al., Phys. Plasmas 16, 093503 (2009)]. We perform this task by using both the analytic and the numerical method with explicit Maxwellian and ''water-bag'' ion source velocity distributions. We find the potential profile near the plasma-sheath edge in the whole range of ion source temperatures of general interest to plasma physics, from zero to ''practical infinity.'' While within limits of ''very low'' and ''relatively high'' ion source temperatures, the potential is proportional to the space coordinate powered by rational numbers {alpha}=1/2 and {alpha}=2/3, with medium ion source temperatures. We found {alpha} between these values being a non-rational number strongly dependent on the ion source temperature. The range of the non-rational power-law turns out to be a very narrow one, at the expense of the extension of {alpha}=2/3 region towards unexpectedly low ion source temperatures.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2011

New signal processing technique for density profile reconstruction using reflectometry

Reflectometry profile measurement requires an accurate determination of the plasma reflected signal. Along with a good resolution and a high signal to noise ratio of the phase measurement, adequate data analysis is required. A new data processing based on time-frequency tomographic representation is used. It provides a clearer separation between multiple components and improves isolation of the relevant signals. In this paper, this data processing technique is applied to two sets of signals coming from two different reflectometer devices used on the Tore Supra tokamak. For the standard density profile reflectometry, it improves the initialization process and its reliability, providing a more accurate profile determination in the far scrape-off layer with density measurements as low as 10{sup 16} m{sup -1}. For a second reflectometer, which provides measurements in front of a lower hybrid launcher, this method improves the separation of the relevant plasma signal from multi-reflection processes due to the proximity of the plasma.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2011

Determining concentration depth profiles in fluorinated networks by means of electric force microscopy

By means of electric force microscopy, composition depth profiles were measured with nanometric resolution for a series of fluorinated networks. By mapping the dielectric permittivity along a line going from the surface to the bulk, we were able to experimentally access to the fluorine concentration profile. Obtained data show composition gradient lengths ranging from 30 nm to 80 nm in the near surface area for samples containing from 0.5 to 5 wt. % F, respectively. In contrast, no gradients of concentration were detected in bulk. This method has several advantages over other techniques because it allows profiling directly on a sectional cut of the sample. By combining the obtained results with x-ray photoelectron spectroscopy measurements, we were also able to quantify F/C ratio as a function of depth with nanoscale resolution.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Non-stationary self-focusing of intense laser beam in plasma using ramp density profile

The non-stationary self-focusing of high intense laser beam in under-dense plasma with upward increasing density ramp is investigated. The obtained results show that slowly increasing plasma density ramp is very important in enhancing laser self-focusing. Also, the spot size oscillations of laser beam in front and rear of the pulse for two different density profiles are shown. We have selected density profiles that already were used by Sadighi-Bonabi et al.[Phys. Plasmas 16, 083105 (2009)]. Ramp density profile causes the laser beam to become more focused and penetrations deeps into the plasma by reduction of diffraction effects. Our computations show more reliable results in comparison to the previous works.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2011

Confocal volume in laser Raman microscopy depth profiling

To clarify the degradation of confocality in laser Raman microscopy depth profiling (optical sectioning) and the influence of pinhole filtering on it, we investigate the confocal volume in detail based on Gaussian beam optics and scalar wave optics. Theoretical depth profiles of a homogeneous transparent sample for four different pinhole sizes, which are computed using the measured incident beam waist radius w{sub 0} and only a few optical system specific parameters such as a numerical aperture (NA) and a focal length, show a good agreement with the corresponding measured depth profiles. The computed confocal volume demonstrates that the pinhole size affects the actual probe depth as well as the axial resolution and the total intensity loss.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2012

Effect of electron density profile on power absorption of high frequency electromagnetic waves in plasma

Considering different typical electron density profiles, a multi slab approximation model is built up to study the power absorption of broadband (0.75-30 GHz) electromagnetic waves in a partially ionized nonuniform magnetized plasma layer. Based on the model, the power absorption spectra for six cases are numerically calculated and analyzed. It is shown that the absorption strongly depends on the electron density fluctuant profile, the background electron number density, and the collision frequency. A potential optimum profile is also analyzed and studied with some particular parameters.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2012

HELIOS: A helium line-ratio spectral-monitoring diagnostic used to generate high resolution profiles near the ion cyclotron resonant heating antenna on TEXTOR

Radial profiles of electron temperature and density are measured at high spatial ({approx}1 mm) and temporal ( Greater-Than-Or-Slanted-Equal-To 10 {mu}s) resolution using a thermal supersonic helium jet. A highly accurate detection system is applied to well-developed collisional-radiative model codes to produce the profiles. Agreement between this measurement and an edge Thomson scattering measurement is found to be within the error bars ( Less-Than-Or-Equivalent-To 20%). The diagnostic is being used to give profiles near the ion cyclotron resonant heating antenna on TEXTOR to better understand RF coupling to the core.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2013

Detection and profiling of carbon via the {sup 13}C(P,{gamma}){sup 14}N resonant reaction

We have tested and standardized the profiling of {sup 13}C in various substrates, including silicon, by use of the {sup 13}C(p,{gamma}){sup 14}N resonance at 1.748 MeV. Depth resolution and interference factors will be shown. The large background due to silicon is not a significant difficulty for atomic concentrations of {sup 13}C which are greater than 1%. Background from elements heavier than Si are present but not significant. We show the mechanical details and results of the analysis program ALLPROF which also develops depth profiles for the light elements H, Li, {sup 11}B, {sup 13}C, {sup 14}N, {sup 15}N, F, Na, Al and P. By extension, the program and our system can profile natural B, C and N via the assumed natural ratio of isotopes.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2013

Using Bayesian analysis and Gaussian processes to infer electron temperature and density profiles on the Mega-Ampere Spherical Tokamak experiment

A unified, Bayesian inference of midplane electron temperature and density profiles using both Thomson scattering (TS) and interferometric data is presented. Beyond the Bayesian nature of the analysis, novel features of the inference are the use of a Gaussian process prior to infer a mollification length-scale of inferred profiles and the use of Gauss-Laguerre quadratures to directly calculate the depolarisation term associated with the TS forward model. Results are presented from an application of the method to data from the high resolution TS system on the Mega-Ampere Spherical Tokamak, along with a comparison to profiles coming from the standard analysis carried out on that system.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2013

Effect of ion orbit loss on the structure in the H-mode tokamak edge pedestal profiles of rotation velocity, radial electric field, density, and temperature

An investigation of the effect of ion orbit loss of thermal ions and the compensating return ion current directly on the radial ion flux flowing in the plasma, and thereby indirectly on the toroidal and poloidal rotation velocity profiles, the radial electric field, density, and temperature profiles, and the interpretation of diffusive and non-diffusive transport coefficients in the plasma edge, is described. Illustrative calculations for a high-confinement H-mode DIII-D [J. Luxon, Nucl. Fusion 42, 614 (2002)] plasma are presented and compared with experimental results. Taking into account, ion orbit loss of thermal ions and the compensating return ion current is found to have a significant effect on the structure of the radial profiles of these quantities in the edge plasma, indicating the necessity of taking ion orbit loss effects into account in interpreting or predicting these quantities.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2013

Thermal conductivity profile determination in proton-irradiated ZrC by spatial and frequency scanning thermal wave methods

Using complementary thermal wave methods, the irradiation damaged region of zirconium carbide (ZrC) is characterized by quantifiably profiling the thermophysical property degradation. The ZrC sample was irradiated by a 2.6 MeV proton beam at 600 °C to a dose of 1.75 displacements per atom. Spatial scanning techniques including scanning thermal microscopy (SThM), lock-in infrared thermography (lock-in IRT), and photothermal radiometry (PTR) were used to directly map the in-depth profile of thermal conductivity on a cross section of the ZrC sample. The advantages and limitations of each system are discussed and compared, finding consistent results from all techniques. SThM provides the best resolution finding a very uniform thermal conductivity envelope in the damaged region measuring ∼52 ± 2 μm deep. Frequency-based scanning PTR provides quantification of the thermal parameters of the sample using the SThM measured profile to provide validation of a heating model. Measured irradiated and virgin thermal conductivities are found to be 11.9 ± 0.5 W m{sup −1} K{sup −1} and 26.7 ±1 W m{sup −1} K{sup −1}, respectively. A thermal resistance evidenced in the frequency spectra of the PTR results was calculated to be (1.58 ± 0.1) × 10{sup −6} m{sup 2} K W{sup −1}. The measured thermal conductivity values compare well with the thermal conductivity extracted from the SThM calibrated signal and the spatially scanned PTR. Combined spatial and frequency scanning techniques are shown to provide a valuable, complementary combination for thermal property characterization of proton-irradiated ZrC. Such methodology could be useful for other studies of ion-irradiated materials.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2013

Investigation of mechanisms for He-I emission radial profile broadening in a weakly ionized cylindrical helium plasma with recombining edge

Spatially resolved spectroscopic measurements of He-I line emission are used to study the causes of emission profile broadening radially across the cylinder of a weakly ionized helium plasma. The plasma consists of an ionizing core (r < 2 cm) surrounded by a recombining edge (r > 2 cm) plasma. The brightness profiles of low-n EUV He-I resonance lines are shown to be strongly radially broadened due to opacity. The brightness profiles of high-n visible lines are also found to be strongly radially broadened, but dominantly due to edge recombination. Visible low-n lines are less strongly radially broadened, apparently by a combination of both recombination and EUV opacity. The low-n visible He-I line ratio method with central opacity correction is found to calculate central electron density and temperature well, with poor agreement at the edge, as expected for recombining plasma. In the recombining edge, high-n Boltzmann analysis is found to accurately measure the cold (T{sub e} < 0.2 eV) edge temperature. Near the core, however, high-n Boltzmann analysis can be complicated by electron-impact excitation, giving incorrect (T{sub e}≈ 0.1 eV) apparent temperatures. Probe measurements were not able to capture the cold edge temperature accurately, probably due to large potential fluctuations, even when using fast triple probe measurements. Fast spectroscopic measurements show that this discrepancy is not explained by recombining plasma alternating with ionizing plasma in the edge region.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2013

High-energy x-ray diffractometer for nondestructive strain depth profile measurement

We describe a lab-based high-energy x-ray diffraction system and a new approach to nondestructively measuring strain profiles in polycrystalline samples. This technique utilizes the tungsten K{sub α1} characteristic radiation from a standard industrial x-ray tube. We introduce a simulation model that is used to determine strain values from data collected with this system. Examples of depth profiling are shown for shot peened aluminum and titanium samples. Profiles to 1 mm depth in aluminum and 300 μm depth in titanium with a depth resolution of 20 μm are presented.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2013

Performance optimization of apodized FBG-based temperature sensors in single and quasi-distributed DWDM systems with new and different apodization profiles

In this work, different FBG temperature sensors are designed and evaluated with various apodization profiles. Evaluation is done under a wide range of controlling design parameters like sensor length and refractive index modulation amplitude, targeting a remarkable temperature sensing performance. New judgment techniques are introduced such as apodization window roll-off rate, asymptotic sidelobe (SL) decay level, number of SLs, and average SL level (SLav). Evaluation techniques like reflectivity, Full width at Half Maximum (FWHM), and Sidelobe Suppression Ratio (SLSR) are also used. A “New” apodization function is proposed, which achieves better performance like asymptotic decay of 18.4 dB/nm, high SLSR of 60 dB, high channel isolation of 57.9 dB, and narrow FWHM less than 0.15 nm. For a single accurate temperature sensor measurement in extensive noisy environment, optimum results are obtained by the Nuttall apodization profile and the new apodization function, which have remarkable SLSR. For a quasi-distributed FBG temperature sensor the Barthann and the new apodization profiles obtain optimum results. Barthann achieves a high asymptotic decay of 40 dB/nm, a narrow FWHM (less than 25 GHZ), a very low SLav of −45.3 dB, high isolation of 44.6 dB, and a high SLSR of 35 dB. The new apodization function achieves narrow FWHM of 0.177 nm, very low SL of −60.1, very low SLav of −63.6 dB, and very high SLSR of −57.7 dB. A study is performed on including an unapodized sensor among apodized sensors in a quasi-distributed sensing system. Finally, an isolation examination is performed on all the discussed apodizations and a linear relation between temperature and the Bragg wavelength shift is observed experimentally and matched with the simulated results.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Effects of self-heating and phase change on the thermal profile of hydrogen isotopes in confined geometries

Growth of high-quality single-crystal hydrogen in confined geometries relies on the in situ formation of seed crystals. Generation of deuterium-tritium seed crystals in a confined geometry is governed by three effects: self-heating due to tritium decay, external thermal environment, and latent heat of phase change at the boundary between hydrogen liquid and vapor. A detailed computation of the temperature profile for liquid hydrogen inside a hollow shell, as is found in inertial confinement fusion research, shows that seeds are likely to form at the equatorial plane of the shell. Radioactive decay of tritium to helium slowly alters the composition of the hydrogen vapor, resulting in a modified temperature profile that encourages seed formation at the top of the shell. We show that the computed temperature profile is consistent with a variety of experimental observations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Influence of different illumination profiles on the on-state resistances of silicon carbide photoconductive semiconductor switches

Characteristics of a silicon-carbide (SiC) photoconductive switch under different illumination profiles are presented. We triggered a V-doped semi-insulated 6H-SiC switch with lateral geometry using a laser beam of 532-nm wavelength. Photoconductivity tests for different spot profiles and locations show that such switches achieve a minimum on-state resistance when the switching gap is illuminated. The differences between on-state resistances are small for various partial illuminations of the switching gap. Semiconductor modeling is used to simulate the electric field and current profiles for different partial illuminations. The simulation results show poor on-state switch performance when partially illuminated. Based on these results, a more revealing circuit model for the switch matches well with experimental results for partial illuminations.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Relativistic self-focusing of ultra-high intensity X-ray laser beams in warm quantum plasma with upward density profile

The results of a numerical study of high-intensity X-ray laser beam interaction with warm quantum plasma (WQP) are presented. By means of an upward ramp density profile combined with quantum factors specially the Fermi velocity, we have demonstrated significant relativistic self-focusing (RSF) of a Gaussian electromagnetic beam in the WQP where the Fermi temperature term in the dielectric function is important. For this purpose, we have considered the quantum hydrodynamics model that modifies refractive index of inhomogeneous WQPs with the inclusion of quantum correction through the quantum statistical and diffraction effects in the relativistic regime. Also, to better illustration of the physical difference between warm and cold quantum plasmas and their effect on the RSF, we have derived the envelope equation governing the spot size of X-ray laser beam in Q-plasmas. In addition to the upward ramp density profile, we have found that the quantum effects would be caused much higher oscillation and better focusing of X-ray laser beam in the WQP compared to that of cold quantum case. Our computational results reveal the importance of the use of electrons density profile and Fermi speed in enhancing self-focusing of laser beam.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Depth profile reconstructions of electronic transport properties in H{sup +} MeV-energy ion-implanted n-Si wafers using photocarrier radiometry

A depth profiling technique using photocarrier radiometry (PCR) is demonstrated and used for the reconstruction of continuously varying electronic transport properties (carrier lifetime and electronic diffusivity) in the interim region between the ion residence layer and the bulk crystalline layer in H{sup +} implanted semiconductor wafers with high implantation energies (∼MeV). This defect-rich region, which is normally assumed to be part of the homogeneous “substrate” in all existing two- and three-layer models, was sliced into many virtual thin layers along the depth direction so that the continuously and monotonically variable electronic properties across its thickness can be considered uniform within each virtual layer. The depth profile reconstruction of both carrier life time and diffusivity in H{sup +} implanted wafers with several implantation doses (3 × 10{sup 14}, 3 × 10{sup 15}, and 3 × 10{sup 16} cm{sup −2}) and different implantation energies (from 0.75 to 2.0 MeV) is presented. This all-optical PCR method provides a fast non-destructive way of characterizing sub-surface process-induced electronic defect profiles in devices under fabrication at any intermediate stage before final metallization and possibly lead to process correction and optimization well before electrical testing and defect diagnosis becomes possible.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗