Search NASA⌕ Search

SEARCH · Search NASA

Results for “electrical doping”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,081 records · Page 60
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Semiconductor Lasers Containing Quantum Wells in Junctions

In a recent improvement upon In(x)Ga(1-x)As/InP semiconductor lasers of the bipolar cascade type, quantum wells are added to Esaki tunnel junctions, which are standard parts of such lasers. The energy depths and the geometric locations and thicknesses of the wells are tailored to exploit quantum tunneling such that, as described below, electrical resistances of junctions and concentrations of dopants can be reduced while laser performances can be improved. In(x)Ga(1-x)As/InP bipolar cascade lasers have been investigated as sources of near-infrared radiation (specifically, at wavelengths of about 980 and 1,550 nm) for photonic communication systems. The Esaki tunnel junctions in these lasers have been used to connect adjacent cascade stages and to enable transport of charge carriers between them. Typically, large concentrations of both n (electron-donor) and p (electron-acceptor) dopants have been necessary to impart low electrical resistances to Esaki tunnel junctions. Unfortunately, high doping contributes free-carrier absorption, thereby contributing to optical loss and thereby, further, degrading laser performance. In accordance with the present innovation, quantum wells are incorporated into the Esaki tunnel junctions so that the effective heights of barriers to quantum tunneling are reduced (see figure).

Yang, Rui Q.↗
NASA NTRS2008

Doping of BiScO3-PbTiO3 Ceramics for Enhanced Properties

High-temperature piezoelectrics are a key technology for aeronautics and aerospace applications such as fuel modulation to increase the engine efficiency and decrease emissions. The principal challenge for the insertion of piezoelectric materials is the limitation on upper use temperature which is due to low Curie-Temperature (T(sub c) and increasing electrical conductivity. BiScO3 -PbTiO3 (BS-PT) system is a promising candidate for improving the operating temperature for piezoelectric actuators due to its high TC (>400 C). Effects of Zr and Mn doping of the BS-PT ceramics have been studied and all electrical and electromechanical properties for Sc-deficient and Ti-deficient BS- PT ceramics are reported as a function of electrical field and temperature. Donor doping with Zr and Mn (in Sc deficient compositions) increased the DC-resistivity and decreased tan at all temperatures. Resulting ceramics exhibited saturated hysteresis loops with low losses and showed no dependence on the applied field (above twice the coercive field) and measurement frequency.

Sehirlioglu, Alp↗
NASA NTRS1993

Long-wavelength PtSi infrared detectors fabricated by incorporating a p(+) doping spike grown by molecular beam epitaxy

By incorporating a 1-nm-thick p(+) doping spike at the PtSi/Si interface, we have successfully demonstrated extended cutoff wavelengths of PtSi Schottky infrared detectors in the long wavelength infrared (LWIR) regime for the first time. The extended cutoff wavelengths resulted from the combined effects of an increased electric field near the silicide/Si interface due to the p(+) doping spike and the Schottky image force. The p(+) doping spikes were grown by molecular beam epitaxy at 450 C, using elemental boron as the dopant source, with doping concentrations ranging from 5 x 10 exp 19 to 2 x 10 exp 20/cu cm. Transmission electron microscopy indicated good crystalline quality of the doping spikes. The cutoff wavelengths were shown to increase with increasing doping concentrations of the p(+) spikes. Thermionic emission dark current characteristics were observed and photoresponses in the LWIR regime were demonstrated.

Lin, T. L.↗
DOE OSTI2018

Characterization of niobium-doped titania epitaxial films deposited by metalorganic chemical vapor deposition

Highlights: • The undoped and Nb-doped TiO{sub 2} films were deposited on SrTiO{sub 3} (100) substrates. • The epitaxial growth relationship between TiO{sub 2} film and the substrate was confirmed. • The microstructures of the films were explored. • The electrical and optical properties of the films were revealed. - Abstract: Titania (TiO{sub 2}) films with different niobium (Nb) doping concentrations were deposited on SrTiO{sub 3} (STO) (100) substrates by metalorganic chemical vapor deposition (MOCVD). The crystal structures, surface morphologies, electrical and optical properties of the Nb-doped TiO{sub 2} (TiO{sub 2}:Nb) films varying with Nb content were investigated. The single crystal TiO{sub 2} films with anatase structure were obtained at low Nb doping levels. The highest Hall mobility of the prepared films reached as high as 16.50 cm{sup 2} V{sup −1} s{sup −1}. The lowest resistivity of 5.75 × 10{sup −2} Ω cm with a Hall mobility of 7.40 cm{sup 2} V{sup −1} s{sup −1} and a carrier concentration of 1.47 × 10{sup 19} cm{sup −3} were obtained from the 1.20% Nb-doped TiO{sub 2} film. This resistivity was about 6 orders of magnitude lower than the undoped TiO{sub 2} film. Moreover, all the deposited films exhibited high average transmittances of over 88% in the visible wavelength range.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Magnetism and T-x phase diagrams of Na- and Ag-substituted EuCd 2 As 2

EuCd 2 As 2 is an antiferromagnetic semimetal, that can host non-trivial topological properties, depending upon its magnetic state and excitations. Here, we report the synthesis and characterization of Eu(Cd 1-x Ag x ) 2 As 2 and Eu 1-y Na y Cd 2 As 2 , and study the evolution and nature of magnetic order with doping. Temperature-substitution phase diagrams are constructed from the electrical resistance and magnetic susceptibility data. We observe a splitting of the magnetic transition into two different transitions, and the gradual increase in one of the transition temperatures with Agand Na-substitution. The other transition remains more or less independent of doping. Further, we show that a magnetic state with a net ferromagnetic moment is stabilized by both Ag and Na doping and this can be explained by considering the changes in band filling due to substitution as suggested by density functional theory (DFT) calculations. We thus show that chemical substitution and the subsequent changes in band filling could be a pathway to tune the magnetic ground state and to stabilize a ferromagnetic phase in EuCd 2 As 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2016

Preparation, characterization and CO{sub 2} gas sensitivity of Polyaniline doped with Sodium Superoxide (NaO{sub 2})

Highlights: • NaO{sub 2} prepared in single step method from NaNO{sub 3} in oxygen rich environment. • The sensors show better performance towards the CO{sub 2}. • A significant sensitivity and fast response toward of CO{sub 2} is observed. • Sensing response assign to transition from n-type to p-type behavior of samples. - Abstract: The sodium superoxide was prepared in single step method by heating sodium nitrate (NaNO{sub 3}) in oxygen rich environment. The PANi/NaO{sub 2} composites were prepared using Ex-situ technique range from 5–20 wt.%. The crystallinity and structure morphology of the PANi/ NaO{sub 2} composite films were characterized by X-ray diffraction, Scanning electron microscopy and Fourier transform infrared spectroscopy respectively. The sensor response was estimated by the change in electrical resistance of sensor in presence of CO{sub 2} gas. The sensor response and selectivity for pure PANi and doped PANi/NaO{sub 2} sensors as a function of concentration of CO{sub 2} at room temperature has been systematically studied. The sensors show better performance towards the CO{sub 2}. A significant sensitivity and fast response toward CO{sub 2} observed for the 20 wt.% PANi/NaO{sub 2} composite film. The sensing response curve assign to transition from n-type to p-type behavior of samples.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Electrical Manipulation of Topological Phases in a Quantum Anomalous Hall Insulator

Quantum anomalous Hall phases arising from the inverted band topology in magnetically doped topological insulators have emerged as an important subject of research for quantization at zero magnetic fields. Though necessary for practical implementation, sophisticated electrical control of molecular beam epitaxy (MBE)-grown quantum anomalous Hall matter have been stymied by growth and fabrication challenges. Here, in this study, a novel procedure is demonstrated, employing a combination of thin-film deposition and 2D material stacking techniques, to create dual-gated devices of the MBE-grown quantum anomalous Hall insulator, Cr-doped (Bi,Sb) 2 Te 3 . In these devices, orthogonal control over the field-induced charge density and the electric displacement field is demonstrated. A thorough examination of material responses to tuning along each control axis is presented, realizing magnetic property control along the former and a novel capability to manipulate the surface exchange gap along the latter. Through electrically addressing the exchange gap, the capabilities to either strengthen the quantum anomalous Hall state or suppress it entirely and drive a topological phase transition to a trivial state are demonstrated. The experimental result is explained using first principle theoretical calculations, and establishes a practical route for in situ control of quantum anomalous Hall states and topology.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Sol-gel derived Al-Ga co-doped transparent conducting oxide ZnO thin films

Transparent conducting ZnO doped with Al, Ga and co-doped Al and Ga (1:1) (AGZO) thin films were grown on glass substrates by cost effective sol-gel spin coating method. The XRD results showed that all the films are polycrystalline in nature and highly textured along the (002) plane. Enhanced grain size was observed in the case of AGZO thin films. The transmittance of all the films was more than 83% in the visible region of light. The electrical properties such as carrier concentration and mobility values are increased in case of AGZO compared to that of Al and Ga doped ZnO thin films. The minimum resistivity of 2.54 × 10{sup −3} Ω cm was observed in AGZO thin film. The co-doped AGZO thin films exhibited minimum resistivity and high optical transmittance, indicate that co-doped ZnO thin films could be used in transparent electronics mainly in display applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Piezoresistive characterization of bottom-up, n-type silicon microwires undergoing bend deformation

The piezoresistance of silicon has been studied over the past few decades in order to characterize the material's unique electromechanical properties and investigate their wider applicability. While bulk and top-down (etched) micro- and nano-wires have been studied extensively, less work exists regarding bottom-up grown microwires. A facile method is presented for characterizing the piezoresistance of released, phosphorus-doped silicon microwires that have been grown, bottom-up, via a chemical vapour deposition, vapour-liquid-solid process. The method uses conductive tungsten probes to simultaneously make electrical measurements via direct ohmic contact and apply mechanical strain via bend deformation. These microwires display piezoresistive coefficients within an order of magnitude of those expected for bulk n-type silicon; however, they show an anomalous response at degenerate doping concentrations (∼10{sup 20 }cm{sup −3}) when compared to lower doping concentrations (∼10{sup 17 }cm{sup −3}), with a stronger piezoresistive coefficient exhibited for the more highly doped wires. This response is postulated to be due to the different growth mechanism of bottom-up microwires as compared to top-down.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Effect of scandia doping method on the emission uniformity of scandate cathode with Sc{sub 2}O{sub 3}–W matrix

Graphical abstract: Emission uniformity of the cathodes prepared by mechanical mixing (a) and spray drying method (b). - Highlights: • The emission uniformity of scandate cathodes has been quantitively obtained. • The nanoparticles on the cathode surface lead to the electric field enhancement. • The cathode prepared by spray drying method exhibits good emission uniformity. - Abstract: Scandia doped tungsten matrix dispenser cathodes were manufactured using scandia doped tungsten powder prepared by mechanical mixing, liquid–solid doping and a spray drying method. It is found the macrostructure of the cathode depended on the powder preparation method. The cathode prepared using the powder prepared by spray drying method had a homogenous and porous matrix characterized with grains with a diameter of less than 1 μm and with many nanoparticles distributing uniformly around these grains. The cathode with submicron structure and uniform distribution of scandia exhibited good emission uniformity. The emission uniformity ΔJ/J of the cathode prepared by spray drying method was 0.17, about 6 times lower than that of the cathode prepared by mechanical mixing method. The calculation results showed that the nanoparticles led to electric field enhancement. A Ba–Sc–O multilayer on the cathode surface and nanoparticles distributing mainly on W grains contributed to the emission property of the cathode.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Magnetic and high frequency properties of nanogranular CoFe-yttrium-doped zirconia films

Soft magnetic nanogranular FeCo-Yttrium-doped Zirconia thin films were fabricated using RF magnetron sputtering at different sputtering power. It was found that film electrical resistivity (ρ) decreased steeply with the increase of sputtering power, while both saturation magnetization (4πM{sub s}) and natural ferromagnetic resonant frequency (ƒ{sub r}) increased with the sputtering power ascending from 100 W to 200 W, but decreased when sputtering power exceeded 200 W. X-ray diffraction analysis and transmission electron microscopy confirmed that the films were nanocrystalline/amorphous composites. A saturation magnetization as high as 15.4 kGs and a ferromagnetic resonance frequency above 3 GHz were obtained.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Recent trends in all-organic polymer dielectrics for high-temperature electrostatic energy storage capacitors

Electrostatic energy storage (EES) capacitors are critical for renewable energy and high-power systems, driving the search for dielectric materials that combine superior electrical insulation, mechanical flexibility, low density, cost-effectiveness, and processability. Polymer-based dielectrics have emerged as leading candidates, particularly for high electric field applications. However, conventional polymers often fail to meet the demands of high-temperature environments due to increased electrical conductivity and reduced discharged energy density at elevated temperatures, resulting in energy loss and reduced performance. High glass transition temperature (T g) polymers show promise but require further optimization to enhance their energy storage capabilities under thermal and electrical stress. This review provides a comprehensive update on recent advancements in high-T g polymer-based dielectrics for EES capacitors, focusing on both intrinsic polymers and all-organic composites. It outlines key design principles, critical performance parameters, and innovative strategies—such as nanofiller doping, layered architectures, physical blending, and chemical crosslinking—to improve electrical, thermal, and mechanical properties. The review also highlights emerging trends, including the integration of machine learning algorithms to explore novel polymer structures and expand the chemical design space. By bridging the gap between academic research and industrial application, this review aims to accelerate the development of next-generation dielectric materials capable of balancing multiple performance metrics for high-temperature EES capacitors.

Xie, Zongliang↗
DOE OSTI2015

Thermoelectric properties of Al doped Mg{sub 2}Si material

In the present paper we have calculated thermoelectric properties of Al doped Mg{sub 2}Si material (Mg{sub 2−x}Al{sub x}Si, x=0.06) using Pseudo potential plane wave method based on DFT and Semi classical Boltzmann theory. The calculations showed n-type conduction, indicating that the electrical conduction are due to electron. The electrical conductivity increasing with increasing temperature and the negative value of Seebeck Coefficient also show that the conduction is due to electron. The thermal conductivity was increased slightly by Al doping with increasing temperature due to the much larger contribution of lattice thermal conductivity over electronic thermal conductivity.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Thermoelectric properties of InSb〈Zn〉 in nanoporous glass

Nanowire structures of zinc-doped indium antimonide are fabricated. These structures are formed in porous glass with characteristic pore sizes of ~7 nm. The temperature dependences of the electrical conductivity, Seebeck coefficient, and current–voltage characteristics are studied. An increase in the InSb Seebeck coefficient in porous glass in comparison with that of the bulk material is detected for the first time.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Solution processed metal-doped NiS/PEDOT:PSS composite thin films as an efficient electrode for quantum-dot sensitized solar cells

Highlights: • Metal-doped NiS/PEDOT:PSS chrysanthemum flower like structure was fabricated. • Deposition of PEDOT: PSS into Cu-NiS enhances the V{sub oc} and PCE. • Introduction of PEDOT: PSS acts as a passivation layer for reducing charge recombination. • Cu-NiS/PEDOT:PSS shows higher onset potential with higher limiting current density. - Abstract: Cu-doped NiS with PEDOT:PSS chrysanthemum flower-like structures, which were composed of many nanopetal bunches in a radial fashion, were synthesized using a modest, eco-friendly and cost effective method. The 5 wt.% Cuph/PEDOT:PSS produced a minute amount of PEDOT:PSS, which exhibiting outstanding electrochemical performance in QDSSCs. The synergetic effects of the composite were investigated and a PCE of 4.87%, fill factor of 0.51, J{sub sc} of 13.75 mA cm{sup −2}, and V{sub oc} of 0.549 V in a polysulfide electrolyte were obtained. The electrode exhibited great electrocatalytic activities and lower charge transfer resistance than that of the bare NiS and Cu-doped NiS, making it a promising material for both fuel cells and QDSSCs. The improved performance of the 5 wt.% Cuph/PEDOT:PSS electrode was attributed mainly to the large surface area, greater electrical conductivity and high electrocatalytic activity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Forced diffusion via electrically induced crystallization for fabricating ZnO–Ti–Si structures

Highlights: • ZnO–Ti–Si system is very important for the structural design. • The electrically induced crystallization method is useful to diffusion process. • Intermetallic compound characteristics have been presented using electrically induced crystallization. • Interface mechanism about diffusion of TZO–TiSi{sub x}–Si structure is presented. - Abstract: Electrically induced crystallization (EIC) is a recently developed process for material modification. This study is applied to EIC to fabricate ZnO–Ti–Si multi-layer structures of various thicknesses to dope Ti into ZnO thin film and to form TiSi{sub x} intermetallic compound (IMC) in a single step. The IMC layer was confirmed using transmission electron microscopy images. The Ti layer thickness was more than 40 nm, which enhanced electron transmission and decreased the total electrical resistance in the structure. Finally, the diffusion mechanisms of EIC and the annealing process were investigated. This study shows that the EIC process has potential for industrial applications.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Local probe microscopic studies on Al-doped ZnO: Pseudoferroelectricity and band bending at grain boundaries

In this paper, based on piezoforce measurements, we show the presence of opposite polarization at grains and grain boundaries of Al-doped ZnO (AZO). The polarization can be flipped by 180° in phase by switching the polarity of the applied electric field, revealing the existence of nanoscale pseudoferroelectricity in AZO grown on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate. We also demonstrate an experimental evidence on local band bending at grain boundaries of AZO films using conductive atomic force microscopy and Kelvin probe force microscopy. The presence of an opposite polarization at grains and grain boundaries gives rise to a polarization-driven barrier formation at grain boundaries. With the help of conductive atomic force microscopy, we show that the polarization-driven barrier along with the defect-induced electrostatic potential barrier account for the measured local band bending at grain boundaries. The present study opens a new avenue to understand the charge transport in light of both polarization and electrostatic effects.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗