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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,081 records · Page 60
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

A boy asked his Mom about energy

Representing the Energy Materials Center (EMC), this document is one of the entries in the Ten Hundred and One Word Challenge. As part of the challenge, the 46 Energy Frontier Research Centers were invited to represent their science in images, cartoons, photos, words and original paintings, but any descriptions or words could only use the 1000 most commonly used words in the English language, with the addition of one word important to each of the EFRCs and the mission of DOE energy. The mission of EMC is advancing the science of energy conversion and storage by understanding and exploiting fundamental properties of active materials and their interfaces.

25 ENERGY STORAGE↗
DOE OSTI2025

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Abstract Resistive switching (RS) devices with ultra‐low‐voltage threshold and reliable switching repeatability exhibits great potential applications in energy‐efficient data storage and neuromorphic computing. Understanding switching mechanisms at nanoscale is critical to design RS devices with improved performance. In this work, a lamella memristive device using focused ion beam (FIB) method based on the metal/TiO x /TiN/Si structure device is fabricated. In situ transmission electron microscopy (TEM) and current–voltage ( I–V ) characteristic demonstrate that the lamella device shows a volatile RS behavior with a threshold switching at ≈ ± 0.4 V. In situ scanning transmission electron microscopy (STEM) experiments with electron energy loss spectroscopy (EELS) reveal that the charge carriers such as oxygen vacancies migrate under positive/negative DC bias and modulate Schottky barriers at the top and bottom metal/semiconductor interfaces. The RS mechanism of the lamella device is based on the Schottky barriers modulation and Joule heating assisted electric field triggered thermal runaway (FTTR) occurred at the metal/semiconductor interfaces. The fundamental insights gained from this study presents a perspective on interface‐type RS devices processing and opens up new technological opportunities of fabricating ultra‐low‐energy memristive devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

A high-resolution molecular spin-photon interface at telecommunication wavelengths

Optically addressable electronic spins in polyatomic molecules are a promising platform for quantum information science, with the potential to enable scalable qubit design and integration through atomistic tunability and nanoscale localization. However, optical state- and site-selection are an open challenge. Here, in this work, we introduce an organo-erbium spin qubit in which narrow (megahertz-scale) optical and spin transitions couple to provide high-resolution access to spin degrees of freedom with telecommunication-frequency light. This spin-photon interface enables demonstration of optical spin polarization and readout that distinguishes between spin states and magnetically inequivalent sites in a molecular crystal. Operation at frequencies compatible with mature photonic and microwave devices provides an opportunity for engineering scalable, integrated molecular spin-optical quantum technologies.

Weiss, Leah R. [University of Chicago, IL (United ↗
DOE OSTI2011

Probing Liquid Surfaces under Vacuum Using SEM and TOF-SIMS

Applying vacuum-based molecular probes of liquid surfaces would aid many environmental, biological, and industrial studies. However the high vapor pressure of water and most organic solvents largely prohibit this use. We report a newly developed versatile and self-contained vacuum interface for high-vapor pressure liquid surfaces, and its application in a time of flight secondary ion mass spectrometer (TOFSIMS) and scanning electron microscope (SEM). The self-contained module requires no wires or tubing connections to the outside of the instrument. It uses a microfluidic channel with a 3 micrometer diameter window into the flowing fluid beneath it. This window supports the liquid against the vacuum by the liquid’s surface tension, while limiting the high-density vapor region traversed by the probe beams to only a few microns. This aperture size also limits temperature and concentration changes due to evaporation of the solvent. The beam damage caused by the probe beams is largely negligible, as the flowing liquid surface self-renews. We demonstrate the performance of this microfluidic interface for in situ liquid surface TOFSIMS (ISLS-TOFSIMS) and SEM (ISLS-SEM) for chemical analysis of liquid surfaces. This device enables in situ liquid (ISL) studies in a wide range of vacuum analytical methods beyond SEM and TOFSIMS.

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2013

Formation of nickel germanide on SiO{sub 2}-capped n-Ge to lower its Schottky barrier height

In this Letter, NiGe/SiO{sub 2}/n-Ge ohmic contacts were demonstrated with Ge, rather than Ni, diffusion through the ion-implanted SiO{sub 2} films to form NiGe. The equivalent Schottky barrier height reduced from 0.58 eV for NiGe/n-Ge to ohmic contact. The anomalous diffusion behavior and accumulation of Ge in the SiO{sub 2} near the NiGe/SiO{sub 2} interface can be explained by vacancy-enhanced Ge diffusion. It is proposed that the presence of vacancies and Ge atoms embedded in the SiO{sub 2} layer play a significant role in the current enhancement by generation of multiple levels in the SiO{sub 2} band gap.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Fundamental Understanding of Dynamic Interfacial Phenomena in Solid State Batteries

Solid-state batteries (SSBs) are considered as one of the most promising battery technologies for resolving the intrinsic limitations of current lithium-ion batteries, such as safety and insufficient energy density. However, the degradation associated with interfaces in SSBs is still a critical issue leading to short cycle life. To get fundamental understanding of the failure mechanism of the interfaces, we first developed a comprehensive set of in situ diagnostic techniques combined with atomic/continuum modeling schemes to investigate and understand the coupled mechanical/chemical degradation associated with dynamic interfacial phenomena in SSBs. Specifically, we focused on in situ observations and characterizations of lithium plating-stripping processes, lithium dendrite formation, interphase formation, and the induced interfacial stresses, as well as the mechanical and electrochemical properties of interfaces and interphases. The final project report first gives an overview of the project background, objectives, technical approaches, and final deliverables for all the budget periods; then follows with a summary on main accomplishments based on main tasks. We particularly would like to highlight some capabilities developed from this project which can also be implemented to our advanced battery development.

25 ENERGY STORAGE↗
DOE OSTI2016

Twin-assisted growth of nominally stable substrates underneath dewetted Au nanoparticles

By applying a simple and inexpensive thermal treatment, we synthesized supported gold-oxide nanostructures, which have potential applications to plasmonic devices and biosensors. The regrowth of nominally stable substrates under gold nanoparticles is associated with the appearance of preferential orientations of dewetted nanoparticles and the formation of atomically sharp interfacial monolayers. Steps present at the interfacial monolayer usually occur at defects including the intersection points of twin planes at the interface. They were related to the nucleation and immigration of the interfacial monolayers, prompting the substrate regrowth. Accordingly, we proposed the twin-assisted growth mechanism, which provides insight on the synthesis of gold-oxide nanostructures. - Highlights: • The twin-assisted growth mechanism is proposed for the abnormal regrowth of substrate underneath Au nanoparticles. • The substrate regrowth is related to the steps and ledges that are present at the Au–MgAl{sub 2}O{sub 4} interfacial monolayers. • Interfacial steps are detected at defects such as the intersecting points of twin planes at the interface.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Polymer Matrix Composites: A Perspective for a Special Issue of Polymer Reviews

Polymer matrix composites, with their high specific strength and stiffness, are used in a wide range of applications from large wind turbine blades to microelectronics. This perspective article provides a brief primer on polymer matrix composites, discusses some of their advantages and limitations, and describes a number of emerging trends in the field. In addition, it introduces four review articles on the topics of recent developments in carbon fibers, natural fiber reinforced composites, evaluation of the interface between the fiber reinforcement and polymer matrix, and carbon nanotube reinforced polymers.

36 MATERIALS SCIENCE↗
DOE OSTI2018

An Implementation of ICME in Materials Information Exchanging Interfaces

The Integrated Computational Materials Engineering (ICME) approach provides a new paradigm for improving the performance of existing materials or discovering and developing new materials. It focuses on developing effective connections between isolated engineering fields, to bring quantitative processing-structure-property relationships and abundant validated data that populate the knowledge base for accelerating the research of new materials while reducing the cost of development. The data exchanging interfaces play a key role in building such ICME connections among different materials models, simulation tools and individual organizations. With implementations of information exchanging interface between different materials database, and interface between database and applications, this paper concludes that in building effective ICME applications, 1) standards-compliant interface can improve the exchange efficiency; 2) popular web service enables automated online materials data transfer; 3) customized data interoperation scripts can provide flexibility and productivity.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Micro-structural characterization of low resistive metallic Ni germanide growth on annealing of Ni-Ge multilayer

Nickel-Germanides are an important class of metal semiconductor alloys because of their suitability in microelectronics applications. Here we report successful formation and detailed characterization of NiGe metallic alloy phase at the interfaces of a Ni-Ge multilayer on controlled annealing at relatively low temperature ∼ 250 °C. Using x-ray and polarized neutron reflectometry, we could estimate the width of the interfacial alloys formed with nanometer resolution and found the alloy stoichiometry to be equiatomic NiGe, a desirable low-resistance interconnect. We found significant drop in resistance (∼ 50%) on annealing the Ni-Ge multilayer suggesting metallic nature of alloy phase at the interfaces. Further we estimated the resistivity of the alloy phase to be ∼ 59μΩ cm.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Scalable Al 2 O 3 –TiO 2 Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices

Abstract Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here, a simple and scalable material system of conductive oxide interfaces is employed, and their unique properties are leveraged for a new type of resistive switching device. An Al 2 O 3 –TiO 2 ‐based valence‐change resistive switching device, where the conductive oxide interface serves both as the bottom electrode and as a reservoir of defects for switching, is demonstrated. The amorphous–polycrystalline Al 2 O 3 –TiO 2 conductive interface is obtained following the technological path of simplifying the fabrication of the 2D electron gases (2DEGs), making them scalable for practical mass integration. Physical analysis of the device chemistry and microstructure with comprehensive electrical analysis of its switching behavior and performance is combined. The origin of the resistive switching is pinpointed to the conductive oxide interface, which serves both as the bottom electrode and as a reservoir of oxygen vacancies. The latter plays a key role in valence‐change resistive switching devices. The new device, based on scalable and complementary metal–oxide–semiconductor (CMOS)‐technology‐compatible fabrication processes, opens new design spaces toward increased tunability and simplification of the device selection challenge.

36 MATERIALS SCIENCE↗
DOE OSTI2014

The growth of heteroepitaxial CuInSe{sub 2} on free-standing N-polar GaN

We report that chalcopyrite CuInSe{sub 2} thin films were grown on free-standing N-polar GaN (0001{sup -}) by molecular beam epitaxy. X-ray diffraction showed that the CuInSe{sub 2} thin film was grown in (112) orientation, and its peak of rocking curve with full width at half maximum of about 897.8 arc-sec indicated the epitaxial growth of CuInSe{sub 2} (112) film on N-polar GaN. Microstructure analysis of the CuInSe{sub 2 } showed that the large lattice mismatch (28.5%) between CuInSe{sub 2 } and GaN is accommodated by domain matching, and no interface reaction occurs between CuInSe{sub 2} and GaN. Our experimental results show that GaN is stable for the epitaxial growth of CuInSe{sub 2} thin film, which exhibits a promising potential for optoelectronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Impact of Microporous Layer Roughness on Gas-Diffusion-Electrode-Based Polymer Electrolyte Membrane Fuel Cell Performance

This study explores the role of the gas diffusion media microporous layer (MPL) surface structure on the electrochemical properties of gas-diffusion-electrode (GDE)-based membrane electrode assemblies (MEAs). It has been shown that a thin ionomer layer on top of the GDE and hot pressing is needed to create good contact between the catalyst layer and the membrane. In this study, gas diffusion media with different MPL surface roughness were applied to fabricate GDE-based MEAs to understand how MPL roughness impacts the amount of ionomer overlayer required for maximum performance. Electron microscopy was employed to investigate MPL/catalyst layer and catalyst layer/membrane interfaces. In-situ performance testing was used to assess the impact of MPL roughness and ionomer overlayer on catalyst utilization and air polarization performance. We find that a smoother MPL surface required a thinner ionomer overlayer than gas diffusion media (GDM) with a rougher MPL surface to achieve a performance comparable to direct-coated catalyst-coated-membrane MEAs.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Visualizing expanding warm dense matter heated by laser-generated ion beams

This PowerPoint presentation concluded with the following. We calculated the expected heating per atom and temperatures of various target materials using a Monte Carlo simulation code and SESAME EOS tables. We used aluminum ion beams to heat gold and diamond uniformly and isochorically. A streak camera imaged the expansion of warm dense gold (5.5 eV) and diamond (1.7 eV). GXI-X recorded all 16 x-ray images of the unheated gold bar targets proving that it could image the motion of the gold/diamond interface of the proposed target.

36 MATERIALS SCIENCE↗