Search NASA⌕ Search

SEARCH · Search NASA

Results for “memory”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,081 records · Page 60
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Dynamic kernel memory space allocation

A processing unit includes one or more processor cores and a set of registers to store configuration information for the processing unit. The processing unit also includes a coprocessor configured to receive a request to modify a memory allocation for a kernel concurrently with the kernel executing on the at least one processor core. The coprocessor is configured to modify the memory allocation by modifying the configuration information stored in the set of registers. In some cases, initial configuration information is provided to the set of registers by a different processing unit. The initial configuration information is stored in the set of registers prior to the coprocessor modifying the configuration information.

Gutierrez, Anthony↗
DOE OSTI2017

Development of an Integrated System for the Long-term Preservation of Records, Knowledge and Memory relating to Radioactive Waste Disposal Facilities - 17099

The Nuclear Energy Agency (NEA) has co-ordinated an international initiative to develop a common approach to the preservation of records, knowledge and long-term memory (RK and M), focused on radioactive waste disposals. The work programme has run in two phases, starting in 2011, with the current phase of the project due to be completed in 2018. Preparations for final reporting are now underway. The detailed implementation of an approach to RK and M preservation for any disposal facility will always remain a national decision. However, the NEA project has produced a 'menu' of tools and techniques that can be accessed and adapted to suit national needs. The common source of these menu components will help to ensure that the memory of the repository is kept alive, that messages to future populations can be clearly understood, and that evidence derived from the disposal environment can be properly interpreted. This paper describes the vision for implementation of the RK and M initiative within national programmes. Practical testing of some components of the menu of tools and techniques is currently underway in France, Sweden and USA, with encouraging results. Other disposal facilities, both under development or in planning, are invited to 'road test' the products and provide feedback. Refinement and maintenance of the tools remains important, and the NEA is committed to ensuring the continued accessibility and availability of the project outputs into the future. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2020

Panel Session 24B: Records, Knowledge, and Memory for Radioactive Waste Repositories: Generational Equity Focus

This panel focused on the latest thoughts, ideas, and methodologies being explored throughout the world on how to communicate with future generations regarding nuclear waste disposal. Scientists determined many years ago that geological disposal in a repository was the preferred solution for nuclear waste disposal given the longevity concerns of the waste(s). Future generations must be informed through records, memory keeping and permanent markers to ensure they are aware of, and knowledgeable of, the dangers associated with nuclear waste isolated from the biosphere. Panelists with presentations: You Want to Drill Where? Human Intrusion Messaging Considerations (Thomas Peake, Jonathan Major); Ethical Reflections on the Basic Reasons for RK and M Measures (Carl-Reinhold Brakenhielm); NEA Activities on Information, Data and Knowledge Management (Rebecca Tadesse); Records, Knowledge and Memory (RK and M) Across Generations: Recent Activities and Progress in Sweden (Claudio Pescatore)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2024

Post polymerization cure shape memory polymers

This invention relates to chemical polymer compositions, methods of synthesis, and fabrication methods for devices regarding polymers capable of displaying shape memory behavior (SMPs) and which can first be polymerized to a linear or branched polymeric structure, having thermoplastic properties, subsequently processed into a device through processes typical of polymer melts, solutions, and dispersions and then crossed linked to a shape memory thermoset polymer retaining the processed shape.

Wilson, Thomas S.↗
DOE OSTI2021

Character Memory- Umbra Package

Character Memory provides visual and acoustic sensing capabilities for characters within the Umbra simulation framework. Character Memory tracks where the character has seen and heard things, and then classifies them based on what they were and what their affiliation might be. The package provides outputs that can drive behaviors in response to those detections. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525. SAND2021-3053 O

Hart, BrianE↗
DOE OSTI2022

Total-Ionizing-Dose Effects on Read Noise of MLC 3-D NAND Memories T

This paper analyzes the total ionizing dose (TID) effects on noise characteristics of commercial multi-level-cell (MLC) 3-D NAND memory technology during the read operation. Additionally, the chips were exposed to a Co-60 gamma-ray source for up to 100 krad(Si) of TID. We find that the number of noisy cells in the irradiated chip increases with TID. Bit-flip noise was more dominant for cells in an erased state during irradiation compared to programmed cells.

3-D NAND Flash↗
DOE OSTI2020

Particle Track Classification Using Quantum Associative Memory (Final Technical Report)

This project explored the use of quantum-assisted algorithms for pattern matching in sub-atomic physics experiments. Pattern matching algorithms are commonly employed to prune data of random noise and to help discriminate between signals generated by particle tracks of interest and signals generated by background events. The quantum-assisted algorithms explored in this project were based on an Ising formulation of quantum associative model (QAMM) recall and quantum content-addressable memory (QCAM) recall. The recall is performed by comparing a probe pattern with those stored in a library of patterns encoded in the QAMM/QCAM model. The classification accuracy of QAMM and QCAM recall was determined as a function of detector resolution, noise, and efficiency and pattern density, where pattern density is defined as the ratio of the number of reference signal patterns encoded in the library to each pattern’s length. We found that QAMM achieved high classification accuracy when applied to datasets with low pattern density. QCAM achieved high classification accuracy for datasets with high pattern density and was found to be more robust to detector noise. The project methodology and results are described in detail in our arXiv preprint (arXiv:2011.11848) . This project was conducted by scientists at the Johns Hopkins University Applied Physics Laboratory and Oak Ridge National Laboratory from August 2018 to August 2020 and was supported by DOE grant DE-SC0019497.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2017

Effect of Ni-Content on the Transformation Temperatures in NiTi-20 at. % Zr High Temperature Shape Memory Alloys

The effect of Ni-content on phase transformation behavior of NiTi-20 at. % Zr high temperature shape memory alloy (HTSMA) is investigated over a small composition range, i.e., 49.8, 50.0 and 50.2 at. % Ni, by differential scanning calorimetry (DSC), high-energy synchrotron radiation X-ray diffraction (SR-XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). All samples show a monoclinic B19' martensitic structure at room temperature. It is shown that even with these small variations in Ni-content, the alloy shows vastly different transformation temperatures and responds in a drastically different manner to aging treatments at 550 and 600 °C. Lastly, a discussion on H-phase composition with respect to bulk composition is presented.

36 MATERIALS SCIENCE↗
NASA NTRS2016

Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets in a NAND Flash Memory

We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found that the single-event upset (SEU) cross section varied inversely with cumulative fluence. We attribute the effect to the variable upset sensitivities of the memory cells. Furthermore, the effect impacts only single cell upsets in general. The rate of multiple-bit upsets remained relatively constant with fluence. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, traditional SEE testing techniques may underestimate the on-orbit event rate for a device with variable upset sensitivity.

NAND flash memory↗
DOE OSTI2020

Rapid Memory Footprint Access Diagnostics

Footprint and reuse distance measure temporal locality and therefore do not capture the significance of access patterns (spacial locality). A strided access pattern has the largest possible footprint but usually has the best performance. To highlight exposed memory latency, we separate footprint into strided (prefetchable) and irregular (non-prefetchable) access components and calculate the growth rate of each. To rapidly compute these footprint access diagnostics, we present two methods, whole-program and precise. Current footprint analyses can cause 200× or more slowdown with realistic inputs and are therefore impractical. Our whole-program method reduces the overhead to 10% by computing upper bounds, but still yields inter-procedural insight through a call path profile. Our precise method uses additional static analysis and profiling to refine the upper bounds for intra-procedural loop nests. We evaluate our approaches using benchmarks that vary access patterns (strided \vs unpredictable), sparsity (all words in a cache line \vs some), and reuse (varying and repeated accesses per element). Notably, for loop nests with unpredictable accesses, the precise method's accuracy is within 10% of ideal. The whole-program method has sufficient accuracy to diagnose bottlenecks.

data locality, memory footprint, footprint access ↗
DOE OSTI2021

Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb 2 Te 3

Abstract One central task of developing nonvolatile phase change memory (PCM) is to improve its scalability for high‐density data integration. In this work, by first‐principles molecular dynamics, to date the thinnest PCM material possible (0.8 nm), namely, a monolayer Sb 2 Te 3 , is proposed. Importantly, its SET (crystallization) process is a fast one‐step transition from amorphous to hexagonal phase without the usual intermediate cubic phase. An increased spatial localization of electrons due to geometrical confinement is found to be beneficial for keeping the data nonvolatile in the amorphous phase at the 2D limit. The substrate and superstrate can be utilized to control the phase change behavior: e.g., with passivated SiO 2 (001) surfaces or hexagonal Boron Nitride, the monolayer Sb 2 Te 3 can reach SET recrystallization in 0.54 ns or even as fast as 0.12 ns, but with unpassivated SiO 2 (001), this would not be possible. Besides, working with small volume PCM materials is also a natural way to lower power consumption. Therefore, the proposed PCM working process at the 2D limit will be an important potential strategy of scaling the current PCM materials for ultrahigh‐density data storage.

2D limit↗
DOE OSTI2018

On the Mechanisms of Formation of Memory Channels and Development of Negative Differential Resistance in Solid Solutions of the ТlInТe{sup 2}–ТlYbТe{sup 2} System

The behavior of an electronic subsystem is investigated in the course of formation and development of a memory channel in solid solutions of the TlInTe2–TlYbTe2 system. An analysis of the current-voltage characteristics allows getting an insight into the reason for a sharp change in electrical conductance of the specimens under study during their transition from the high-resistance to high-conductance state and the reasons for the well known instability of threshold converters, which makes it possible to design devices with high threshold voltage stability.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗