DOE OSTI2018
To advance knowledge of the beneficial effects of K in Cu(In,Ga)(Se,S) 2 (CIGS) photovoltaic (PV) absorbers, recent Cu-K-In-Se phase growth studies have been extended to PV performance. First, the effect of distributing K throughout bulk Cu 1-x K x InSe 2 absorbers at low K/(K+Cu) compositions (0 = x = 0.30) was studied. Efficiency, open-circuit voltage (VOC), and fill factor (FF) were greatly enhanced for x ~ 0.07, resulting in an officially-measured 15.0%-efficient solar cell, matching the world record CuInSe 2 efficiency. The improvements were a result of reduced interface and bulk recombination, relative to CuInSe 2 (x ~ 0). However, higher x compositions had reduced efficiency, short-circuit current density (J SC ), and FF due to greatly increased interface recombination, relative to the x ~ 0 baseline. Next, the effect of confining K at the absorber/buffer interface at high K/(K+Cu) compositions (0.30 = x = 0.92) was researched. Previous work showed that these surface layer growth conditions produced CuInSe 2 with a large phase fraction of KInSe 2 . After optimization (75 nm surface layer with x ~ 0.41), these KInSe 2 surface samples exhibited increased efficiency (officially 14.9%), VOC, and FF as a result of decreased interface recombination. The KInSe 2 surfaces had features similar to previous reports for KF post-deposition treatments (PDTs) used in world record CIGS solar cells - taken as indirect evidence that KInSe 2 can form during these PDTs. Both the bulk and surface growth processes greatly reduced interface recombination. However, the KInSe 2 surface had higher K levels near the surface, greater lifetimes, and increased inversion near the buffer interface, relative to the champion bulk Cu 1-x K x InSe 2 absorber. These characteristics demonstrate that K may benefit PV performance by different mechanisms at the surface and in the absorber bulk.