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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,099 records · Page 61
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

High-Mass Loading of Flower-like Ni-MoS 2 microspheres Toward Efficient Intercalation pseudocapacitive Electrode

This work reports the exploration of intercalation pseudocapacitance in a thicker electrode of flowerlike Ni-doped MoS 2 microspheres that features a mass loading of ~10 mg/cm 2 without sacrificing the gravimetric capacitance (~425 F/g at 5 mV/s). Integration of Ni atoms into MoS 2 microspheres not only stabilized the structural integrity but also ameliorated the rapid intercalation and deintercalation of electrolyte ions even at a commercial-level mass loading. The energy instability by Ni doping significantly changed the local bonding behavior and the overall electronic structure of MoS 2 , facilitating the breaking of the MoS 2 layer and generation of more active edge sites, which are responsible for faster reaction kinetics. The experiments attribute the overall capacitance enhancement in (Mo-Ni)S 2 to the increased rate of electrolyte ion insertion and extraction, which is confirmed by b-values close to 0.5, at different potentials, indicating that the current response predominantly depends on the diffusive mechanism for both MoS 2 and Ni-MoS 2 thicker electrodes. The symmetric device constructed with Ni-MoS 2 microspheres exhibited a capacitance value of 101 F/g in 1 mV/s, for which the energy density is 9 Wh/kg, as well as attained an outstanding cycling stability of 10000 cycles with 60% retention at 2 A/g. In addition to providing insights into the development of 2D TMDs, this work explores the design of robust and highly efficient intercalation electrode material for electrochemical energy storage devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2012

Calibrated nanoscale dopant profiling using a scanning microwave microscope

The scanning microwave microscope is used for calibrated capacitance spectroscopy and spatially resolved dopant profiling measurements. It consists of an atomic force microscope combined with a vector network analyzer operating between 1-20 GHz. On silicon semiconductor calibration samples with doping concentrations ranging from 10{sup 15} to 10{sup 20} atoms/cm{sup 3}, calibrated capacitance-voltage curves as well as derivative dC/dV curves were acquired. The change of the capacitance and the dC/dV signal is directly related to the dopant concentration allowing for quantitative dopant profiling. The method was tested on various samples with known dopant concentration and the resolution of dopant profiling determined to 20% while the absolute accuracy is within an order of magnitude. Using a modeling approach the dopant profiling calibration curves were analyzed with respect to varying tip diameter and oxide thickness allowing for improvements of the calibration accuracy. Bipolar samples were investigated and nano-scale defect structures and p-n junction interfaces imaged showing potential applications for the study of semiconductor device performance and failure analysis.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Anomalous change in dielectric constant of CaCu{sub 3}Ti{sub 4}O{sub 12} under violet-to-ultraviolet irradiation

The influence of light illumination on the dielectric constant of CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) polycrystals is studied in this work. When exposed to 405-nm laser light, a reversible enhancement in the room temperature capacitance as high as 22% was observed, suggesting application of light-sensitive capacitance devices. To uncover the microscopic mechanisms mediating this change, we performed electronic structure measurements, using photoemission spectroscopy, and measured the electrical conductivity of the CCTO samples under different conditions of light exposure and oxygen partial pressure. Together, these results suggest that the large capacitance enhancement is driven by oxygen vacancies induced by the irradiation.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Electron transfer at the contact between Al electrode and gold nanoparticles of polymer: Nanoparticle resistive switching devices studied by alternating current impedance spectroscopy

Electron transfer at the contact between an Al electrode and Au nanoparticles of polymer:nanoparticle devices is studied by ac impedance spectroscopy. The devices have a polystyrene layer embedded with Au nanoparticles capped with conjugated 2-naphthalenethiol sandwiched between Al and MoO{sub 3}/Al electrodes, and they exhibit electrode-sensitive resistive switches. The devices in the pristine or high resistance state have high capacitance. The capacitance decreases after the devices switch to a low resistance state by a voltage scan. The change in the capacitance is attributed to the voltage-induced change on the electronic structure of the contact between the Al electrode and Au nanoparticles.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Admittance of multiterminal quantum Hall conductors at kilohertz frequencies

We present an experimental study of the low frequency admittance of quantum Hall conductors in the [100 Hz, 1 MHz] frequency range. We show that the frequency dependence of the admittance of the sample strongly depends on the topology of the contacts connections. Our experimental results are well explained within the Christen and Büttiker approach for finite frequency transport in quantum Hall edge channels taking into account the influence of the coaxial cables capacitance. In the Hall bar geometry, we demonstrate that there exists a configuration in which the cable capacitance does not influence the admittance measurement of the sample. In this case, we measure the electrochemical capacitance of the sample and observe its dependence on the filling factor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Temporal change in the electromechanical properties of dielectric elastomer minimum energy structures

Dielectric elastomer minimum energy structures (DEMES) are soft electronic transducers and energy harvesters with potential for consumer goods. The temporal change in their electromechanical properties is of major importance for engineering tasks. Therefore, we study acrylic DEMES by impedance spectroscopy and by optical methods for a total time period of approx. 4.5 months. We apply either compliant electrodes from carbon black particles only or fluid electrodes from a mixture of carbon black particles and silicone oil. From the measurement data, the equivalent series capacitances and resistances as well as the bending angles of the transducers are obtained. We find that the equivalent series capacitances change in average between −12 %/1000 h and −4.0 %/1000 h, while the bending angles decrease linearly with slopes ranging from −15 %/1000 h to −7 %/1000 h. Transducers with high initial bending angles and electrodes from carbon black particles show the smallest changes of the electromechanical characteristics. The capacitances decrease faster for DEMES with fluid electrodes. Some DEMES of this type reveal huge and unpredictable fluctuations of the resistances over time due to the ageing of the contacts. Design guidelines for DEMES follow directly from the observed transient changes of their electromechanical performance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Modifying the characteristics of carbon nanotubes grown on metallic substrates for ultracapacitor applications

This paper reports the design, fabrication, and testing of carbon nanotube (CNT)-based ultracapacitor electrodes and provides quantitative results, showing that total electrode surface area—and, correspondingly, the total cell capacitance—is highly sensitive to the amount of catalyst material deposited prior to CNT growth. We deposit between 0.6 and 1.0 nm of iron catalyst on metallic (tungsten) substrates and synthesized vertically aligned CNT forests directly by thermal chemical vapor deposition. A capacitance maximum is observed with electrodes prepared with 0.8 nm of catalyst. Geometrical arguments based on average CNT diameter and areal density are used to corroborate this result. The CNTs' differential capacitance is found to be independent of their areal density, mean diameter, length, and the amount of catalyst used to grow them.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

The high density of defect states at the dielectric/III-N interface in GaN based metal-insulator-semiconductor structures causes tremendous threshold voltage drifts, ΔV{sub th}, under forward gate bias conditions. A comprehensive study on different dielectric materials, as well as varying dielectric thickness t{sub D} and barrier thickness t{sub B}, is performed using capacitance-voltage analysis. It is revealed that the density of trapped electrons, ΔN{sub it}, scales with the dielectric capacitance under spill-over conditions, i.e., the accumulation of a second electron channel at the dielectric/AlGaN barrier interface. Hence, the density of trapped electrons is defined by the charging of the dielectric capacitance. The scaling behavior of ΔN{sub it} is explained universally by the density of accumulated electrons at the dielectric/III-N interface under spill-over conditions. We conclude that the overall density of interface defects is higher than what can be electrically measured, due to limits set by dielectric breakdown. These findings have a significant impact on the correct interpretation of threshold voltage drift data and are of relevance for the development of normally off and normally on III-N/GaN high electron mobility transistors with gate insulation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Determination of the dissipation in superconducting Josephson junctions

The results relative to macroscopic quantum tunneling rate, out of the metastable state of Josephson junctions, are examined in view of determining the effect of dissipation. We adopt a simple criterion in accordance to which the effect of dissipation can be evaluated by analyzing the shortening of the semiclassical traversal time of the barrier. In almost all the considered cases, especially those with relatively large capacitance values, the relative time shortening turns out to be about 20% and with a corresponding quality factor Q ≃ 5.5. However, beyond the specific cases here considered, still in the regime of moderate dissipation, the method is applicable also to different situations with different values of the quality factor. The method allows, within the error limits, for a reliable determination of the load resistance R{sub L}, the less accessible quantity in the framework of the resistively and capacitively shunted junction model, provided that the characteristics of the junction (intrinsic capacitance, critical current, and the ratio of the bias current to the critical one) are known with sufficient accuracy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

The hole traps associated with high background doping in p-type GaAsN grown by chemical beam epitaxy are studied based on the changes of carrier concentration, junction capacitance, and hole traps properties due to the annealing. The carrier concentration was increased dramatically with annealing time, based on capacitance–voltage (C–V) measurement. In addition, the temperature dependence of the junction capacitance (C–T) was increased rapidly two times. Such behavior is explained by the thermal ionization of two acceptor states. These acceptors are the main cause of high background doping in the film, since the estimated carrier concentration from C–T results explains the measured carrier concentration at room temperature using C–V method. The acceptor states became shallower after annealing, and hence their structures are thermally unstable. Deep level transient spectroscopy (DLTS) showed that the HC2 hole trap was composed of two signals, labeled HC21 and HC22. These defects correspond to the acceptor levels, as their energy levels obtained from DLTS are similar to those deduced from C–T. The capture cross sections of HC21 and HC22 are larger than those of single acceptors. In addition, their energy levels and capture cross sections change in the same way due to the annealing. This tendency suggests that HC21 and HC22 signals originate from the same defect which acts as a double acceptor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Impedance spectroscopic analysis of composite electrode from activated carbon/conductive materials/ruthenium oxide for supercapacitor applications

Activated carbon powders (ACP) were produced from the KOH treated pre-carbonized rubber wood sawdust. Different conductive materials (graphite, carbon black and carbon nanotubes (CNTs)) were added with a binder (polivinylidene fluoride (PVDF)) into ACP to improve the supercapacitive performance of the activated carbon (AC) electrodes. Symmetric supercapacitor cells, fabricated using these AC electrodes and 1 molar H{sub 2}SO{sub 4} electrolyte, were analyzed using a standard electrochemical impedance spectroscopy technique. The addition of graphite, carbon black and CNTs was found effective in reducing the cell resistance from 165 to 68, 23 and 49 Ohm respectively, and increasing the specific capacitance of the AC electrodes from 3 to 7, 17, 32 F g{sup −1} respectively. Since the addition of CNTs can produce the highest specific capacitance, CNTs were chosen as a conductive material to produce AC composite electrodes that were added with 2.5 %, 5 % and 10 % (by weight) electro-active material namely ruthenium oxide; PVDF binder and CNTs contents were kept at 5 % by weight in each AC composite produced. The highest specific capacitance of the cells obtained in this study was 86 F g{sup −1}, i.e. for the cell with the resistance of 15 Ohm and composite electrode consists of 5 % ruthenium oxide.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Anomalous C-V response correlated to relaxation processes in TiO{sub 2} thin film based-metal-insulator-metal capacitor: Effect of titanium and oxygen defects

Capacitance-voltage (C–V) and capacitance-frequency (C–f) measurements are performed on atomic layer deposited TiO{sub 2} thin films with top and bottom Au and Pt electrodes, respectively, over a large temperature and frequency range. A sharp capacitance peak/discontinuity (C–V anomalous) is observed in the C–V characteristics at various temperatures and voltages. It is demonstrated that this phenomenon is directly associated with oxygen vacancies. The C–V peak irreversibility and dissymmetry at the reversal dc voltage are attributed to difference between the Schottky contacts at the metal/TiO{sub 2} interfaces. Dielectric analyses reveal two relaxation processes with degeneration of the activation energy. The low trap level of 0.60–0.65 eV is associated with the first ionized oxygen vacancy at low temperature, while the deep trap level of 1.05 eV is associated to the second ionized oxygen vacancy at high temperature. The DC conductivity of the films exhibits a transition temperature at 200 °C, suggesting a transition from a conduction regime governed by ionized oxygen vacancies to one governed by interstitial Ti{sup 3+} ions. Both the C–V anomalous and relaxation processes in TiO{sub 2} arise from oxygen vacancies, while the conduction mechanism at high temperature is governed by interstitial titanium ions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

High-κ TiO{sub 2} thin film prepared by sol-gel spin-coating method

High-k TiO{sub 2} thin film on p-type silicon substrate was fabricated by a combined sol-gel and spin coating method. Thus deposited titania film had anatase phase with a small grain size of 16 nm and surface roughness of ≅ 0.6 nm. The oxide capacitance (C{sub ox}), flat band capacitance (C{sub FB}), flat band voltage (V{sub FB}), oxide trapped charge (Q{sub ot}), calculated from the high frequency (1 MHz) C-V curve were 0.47 nF, 0.16 nF, − 0.91 V, 4.7x10{sup −12} C, respectively. As compared to the previous reports, a high dielectric constant of 94 at 1 MHz frequency was observed in the devices investigated here and an equivalent oxide thickness (EOT) was 4.1 nm. Dispersion in accumulation capacitance shows a linear relationship with AC frequencies. Leakage current density was found in acceptable limits (2.1e-5 A/cm{sup 2} for −1 V and 5.7e-7 A/cm{sup 2} for +1 V) for CMOS applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Reducing interface recombination for Cu(In,Ga)Se 2 by atomic layer deposited buffer layers

Partial CuInGaSe 2 (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnO x buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VI systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Lastly, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.

14 SOLAR ENERGY↗
DOE OSTI2015

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Understanding defect distributions in polythiophenes via comparison of regioregular and regiorandom species

Organic photovoltaics (OPVs) are regarded as promising for solar-electric conversion with steadily improving power conversion efficiencies. For further progress, it is crucial to understand and mitigate defect states (traps) residing in the band-gap of OPV materials. In this work, using capacitance measurements, we analyzed two major bands in the density of states (DOS) energy spectra of defects in poly(3-hexylthiophene) (P3HT); regio-regular and regio-random species of P3HT were compared to elucidate the role of morphological disorder. To accurately interpret the obtained DOS profile, trap emission prefactors and activation energy were extracted from temperature dependent capacitance-frequency measurements, while doping, Fermi energy, built-in voltage, and energy levels of the defects were extracted from capacitance-voltage measurements. We identified that the lower energy band—misinterpreted in literature as a defect distribution—stems from free carrier response. The higher energy defect distribution band for regio-random P3HT was an order of magnitude higher than region-regular P3HT, thus stemming from morphological disorder. Impedance spectroscopy was also employed for further comparison of the two P3HT species.

14 SOLAR ENERGY↗
DOE OSTI2016

Electrical and structural characterizations of crystallized Al{sub 2}O{sub 3}/GaN interfaces formed by in situ metalorganic chemical vapor deposition

Al{sub 2}O{sub 3} films were grown in situ by metalorganic chemical vapor deposition at 900 °C on GaN of both Ga- and N-face polarities. High-resolution transmission electron microscopy revealed that the Al{sub 2}O{sub 3} films were crystalline and primarily γ-phase. The Al{sub 2}O{sub 3}/Ga-GaN and Al{sub 2}O{sub 3}/N-GaN interfaces were both atomically sharp, and the latter further exhibited a biatomic step feature. The corresponding current-voltage (J-V) characteristics were measured on a metal-Al{sub 2}O{sub 3}-semiconductor capacitor (MOSCAP) structure. The leakage current was very high when the Al{sub 2}O{sub 3} thickness was comparable with the size of the crystalline defects, but was suppressed to the order of 1 × 10{sup −8} A/cm{sup 2} with larger Al{sub 2}O{sub 3} thicknesses. The interface states densities (D{sub it}) were measured on the same MOSCAPs by using combined ultraviolet (UV)-assisted capacitance-voltage (C-V), constant capacitance deep level transient spectroscopy (CC-DLTS), and constant capacitance deep level optical spectroscopy (CC-DLOS) techniques. The average D{sub it} measured by CC-DLTS and CC-DLOS were 6.6 × 10{sup 12} and 8.8 × 10{sup 12} cm{sup −2} eV{sup −1} for Al{sub 2}O{sub 3}/Ga-GaN and 8.6 × 10{sup 12} and 8.6 × 10{sup 12 }cm{sup −2} eV{sup −1} for Al{sub 2}O{sub 3}/N-GaN, respectively. The possible origins of the positive (negative) polarization compensation charges in Al{sub 2}O{sub 3}/Ga-GaN (Al{sub 2}O{sub 3}/N-GaN), including the filling of interface states and the existence of structure defects and impurities in the Al{sub 2}O{sub 3} layer, were discussed in accordance with the experimental results and relevant studies in the literature.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Graphene-based tunable non-foster circuit for VHF applications

This paper presents a negative impedance converter (NIC) based on graphene field effect transistors (GFETs) for VHF applications. The NIC is designed following Linvill’s open circuit stable (OCS) topology. The DC modelling parameters of GFET are extracted from a device measured by Meric et al. [IEEE Electron Devices Meeting, 23.2.1 (2010)] Estimated parasitics are also taken into account. Simulation results from Keysight Advanced Design System (ADS) show good NIC performance up to 200 MHz and the value of negative capacitance is directly proportional to the capacitive load. In addition, it has been shown that by varying the supply voltage the value of negative capacitance can also be tuned. The NIC stability has been tested up to 2 GHz (10 times the maximum operation frequency) using Nyquist stability criterion to ensure there are no oscillation issues.

77 NANOSCIENCE AND NANOTECHNOLOGY↗