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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,099 records · Page 61
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Robust perpendicular magnetic anisotropy in off-axis sputtered europium iron garnet (EuIG) thin films

In this study, the rare earth iron garnet (REIG), Eu 3 Fe 5 O 12 (EuIG) has emerged as a promising material for ferrimagnetic insulator based spintronics. Earlier studies have shown that perpendicular magnetic anisotropy (PMA) in EuIG and other REIGs can be achieved by magnetostriction and misfit strain at the film-substrate interface. Typically, the strain relaxes significantly with thickness, limiting the thickness of films that can be grown using this strategy. Here we show PMA that does not reduce substantially with thickness in epitaxial EuIG films grown by off-axis sputtering; The PMA remains robust in films > 100 nm thick. Epitaxially induced strain with minimal relaxation is confirmed using high resolution symmetric and asymmetric x-ray diffraction reciprocal space maps.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Microsecond Electron Beam Source with Electron Energy Up to 400 Kev and Plasma Anode

A new high-power source of electrons with plasma anode for producing high-current microsecond electron beams with electron energy up to 400 keV has been developed, manufactured, and put in operation. To increase the cross section and pulse current duration of the beam, a multipoint explosive emission cathode is used in the electron beam source, and the beam is formed in an applied external guiding magnetic field. The Marx generator with vacuum insulation is used as a high-voltage source. Electron beams with electron energy up to 300–400 keV, current of 5–15 kA, duration of 1.5–3 μs, energy up to 4 kJ, and cross section up to 150 cm{sup 2} have been produced. The operating modes of the electron beam source are realized in which the applied voltage is influenced weakly on the current. The possibility of source application for melting of metal surfaces is demonstrated.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Probing the interplay between lattice dynamics and short-range magnetic correlations in CuGeO 3 with femtosecond RIXS

Investigations of magnetically ordered phases on the femtosecond timescale have provided significant insights into the influence of charge and lattice degrees of freedom on the magnetic sub-system. However, short-range magnetic correlations occurring in the absence of long-range order, for example in spin-frustrated systems, are inaccessible to many ultrafast techniques. Here, we show how time-resolved resonant inelastic X-ray scattering (trRIXS) is capable of probing such short-ranged magnetic dynamics in a charge-transfer insulator through the detection of a Zhang–Rice singlet exciton. Utilizing trRIXS measurements at the O K-edge, and in combination with model calculations, we probe the short-range spin correlations in the frustrated spin chain material CuGeO 3 following photo-excitation, revealing a strong coupling between the local lattice and spin sub-systems.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Space Charge Effects in Low Energy Magnetized Electron Beams

Magnetized electron cooling of the ion beam is one of the major approaches towards obtaining the required high luminosity in the proposed Electron-Ion Collider (EIC). To increase the cooling efficiency, a bunched electron beam with a high bunch charge and high repetition rate is required. However, these features can combine to enhance the collective interactions, such as the space charge effect. A magnetized electron beam was successfully generated at the Thomas Jefferson National Accelerator Facility (JLab) using a compact, 300 kV DC high voltage photo-gun with an inverted insulator geometry and bi-alkali antimonide photocathode. The beam magnetization was characterized using a modest diagnostic beamline to measure beam sizes, rotation angles, and normalized transverse emittance as a function of magnetic field at the photocathode, laser spot size, and gun high-voltage. Simultaneously, simulations were performed using the A Space Charge Tracking Algorithm (ASTRA) and General Particle Tracer (GPT) programs. Further, sustained high average current magnetized beam up to 28 mA was demonstrated, and the photocathode lifetime for different magnetized electron beam currents was investigated. In the second part of the project, the space charge effect in low-energy magnetized electron beams was studied and compared with GPT simulations. The high bunch charge studies showed evidence of space charge current limitations starting at 0.3 nC and limited the maximum delivered bunch charge to 0.7 nC. To reach the high bunch charge goal of a few nC, the existing DC photo-gun design was modified using CST Studio Suite’s electromagnetic field solver, and a way to cancel the beam deflection exerted by the non-symmetric nature of the inverted insulator photo-gun geometry was discovered. This thesis presents a detailed description of the generation, characterization, and simulation of high current, high bunch charge magnetized electron beams at JLab, as well as the modified photo-gun design. Together with measurements and simulations, the purpose of this thesis is to provide a solid background on the theoretical aspects and the experimental challenges associated with magnetized electron beams for accelerator applications.

Wijethunga, W M Sajini↗
DOE OSTI2024

Filling-enforced obstructed atomic insulators

Topological band theory has achieved great success in the high-throughput search for topological band structures both in paramagnetic and magnetic crystal materials. However, a significant proportion of materials are topologically trivial insulators at the Fermi level. In this paper, we show that, remarkably, for a subset of the topologically trivial insulators, knowing only their electron number and the Wyckoff positions of the atoms we can separate them into two groups: the obstructed atomic insulator (OAI) and the atomic insulator (AI). The interesting group, the OAI, have a center of charge not localized on the atoms. Using the theory of topological quantum chemistry, in this work we first derive the necessary and sufficient conditions for a topologically trivial insulator to be a filling enforced obstructed atomic insulator (feOAI) in the 1651 Shubnikov space groups. Remarkably, the filling enforced criteria enable the identification of obstructed atomic bands without knowing the representations of the band structures. Hence, no calculations are needed for the filling enforced criteria, although they are needed to obtain the band gaps. With the help of the Topological Quantum Chemistry website, we have performed a high-throughput search for feOAIs and have found that 957 ICSD entries (638 unique materials) are paramagnetic feOAIs, among which 738 (475) materials have an indirect gap. The metallic obstructed surface states of feOAIs are also showcased by several material examples. Published by the American Physical Society 2024

Materials Science↗
DOE OSTI2018

Finite momentum Cooper pairing in three-dimensional topological insulator Josephson junctions

Abstract Unconventional superconductivity arising from the interplay between strong spin–orbit coupling and magnetism is an intensive area of research. One form of unconventional superconductivity arises when Cooper pairs subjected to a magnetic exchange coupling acquire a finite momentum. Here, we report on a signature of finite momentum Cooper pairing in the three-dimensional topological insulator Bi 2 Se 3 . We apply in-plane and out-of-plane magnetic fields to proximity-coupled Bi 2 Se 3 and find that the in-plane field creates a spatially oscillating superconducting order parameter in the junction as evidenced by the emergence of an anomalous Fraunhofer pattern. We describe how the anomalous Fraunhofer patterns evolve for different device parameters, and we use this to understand the microscopic origin of the oscillating order parameter. The agreement between the experimental data and simulations shows that the finite momentum pairing originates from the coexistence of the Zeeman effect and Aharonov–Bohm flux.

36 MATERIALS SCIENCE↗
DOE OSTI2022

A -type antiferromagnetic order in the Zintl-phase insulator EuZn 2 P 2

Zintl phases, containing strongly covalently bonded frameworks with separate ionically bonded ions, have emerged as a critical materials family in which to couple magnetism and strong spin-orbit coupling to drive diverse topological phases of matter. Here we report the single-crystal synthesis, magnetic, thermodynamic, transport, and theoretical properties of the Zintl compound EuZn 2 P 2 that crystallizes in the anti-La 2 O 3 (CaAl 2 Si 2 ) P-3m1 structure, containing triangular layers of Eu 2+ ions. In-plane resistivity measurements reveal insulating behavior with an estimated activation energy of E g = 0.11eV. Specific heat and magnetization measurements indicate antiferromagnetic ordering at T N = 23K. Curie-Weiss analysis of in-plane and out of plane magnetic susceptibility from T = 150 to 300 K yields p eff = 8.61 for μ 0 H⊥c and p eff = 7.74 for μ 0 H//c, close to the expected values for the 4f 7 J = S = 7/2 Eu 2+ ion and indicative of weak anisotropy. Below T N , a significant anisotropy of χ ⊥ /χ // ≈ 2.3 develops, consistent with A-type magnetic order as observed in isostructural analogs and as predicted by the density functional theory calculations reported herein. The positive Weiss temperatures of θ W =19.2K for μ 0 H⊥c and θ W =41.9K for μ 0 H//c show a similar anisotropy and suggest competing ferromagnetic and antiferromagnetic interactions. Comparing Eu magnetic ordering temperatures across trigonal EuM 2 X 2 (M= divalent metal, X= pnictide) shows that EuZn 2 P 2 exhibits the highest ordering temperature, with variations in T N correlating with changes in expected dipolar interaction strengths within and between layers and independent of the magnitude of electrical conductivity. These results provide experimental validation of the crystochemical intuition that the cation Eu 2+ layers and the anionic (M 2 X 2 ) 2– framework can be treated as electronically distinct subunits, enabling further predictive materials design.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Block orbital-selective Mott insulators: A spin excitation analysis

We present a comprehensive study of the spin excitations—as measured by the dynamical spin structure factor S(q,ω)—of the so-called block-magnetic state of low-dimensional orbital-selective Mott insulators. We realize this state via both a multi-orbital Hubbard model and a generalized Kondo-Heisenberg Hamiltonian. Due to various competing energy scales present in the models, the system develops periodic ferromagnetic islands of various shapes and sizes, which are antiferromagnetically coupled. The 2×2 particular case was already found experimentally in the ladder material BaFe2Se3 that becomes superconducting under pressure. Here we discuss the electronic density as well as Hubbard and Hund coupling dependence of S(q,ω) using density matrix renormalization group method. Several interesting features were identified: (1) An acoustic (dispersive spin-wave) mode develops. (2) The spin-wave bandwidth establishes a new energy scale that is strongly dependent on the size of the magnetic island and becomes abnormally small for large clusters. (3) Optical (dispersionless spin excitation) modes are present for all block states studied here. In addition, a variety of phenomenological spin Hamiltonians have been investigated but none matches entirely our results that were obtained primarily at intermediate Hubbard U strengths. Our comprehensive analysis provides theoretical guidance and motivation to crystal growers to search for appropriate candidate materials to realize the block states, and to neutron scattering experimentalists to confirm the exotic dynamical magnetic properties unveiled here, with a rich mixture of acoustic and optical features.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Generation of Tunable Stochastic Sequences Using the Insulator–Metal Transition

Probabilistic computing is a paradigm in which data are not represented by stable bits, but rather by the probability of a metastable bit to be in a particular state. The development of this technology has been hindered by the availability of hardware capable of generating stochastic and tunable sequences of “1s” and “0s”. The options are currently limited to complex CMOS circuitry and, recently, magnetic tunnel junctions. Here, we demonstrate that metal–insulator transitions can also be used for this purpose. We use an electrical pump/probe protocol and take advantage of the stochastic relaxation dynamics in VO 2 to induce random metallization events. A simple latch circuit converts the metallization sequence into a random stream of 1s and 0s. The resetting pulse in between probes decorrelates successive events, providing a true stochastic digital sequence.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2016

Organic-inorganic proximity effect in the magneto-conductance of vertical organic field effect transistors

Vertical organic field effect transistors having a patterned source electrode and an a-SiO{sub 2} insulation layer show high performance as a switching element with high transfer characteristics. By measuring the low field magneto-conductance under ambient conditions at room temperature, we show here that the proximity of the inorganic a-SiO{sub 2} insulation to the organic conducting channel affects considerably the magnetic response. We propose that in n-type devices, electrons in the organic conducting channel and spin bearing charged defects in the inorganic a-SiO{sub 2} insulation layer (e.g., O{sub 2} = Si{sup +·}) form oppositely charged spin pairs whose singlet-triplet spin configurations are mixed through the relatively strong hyperfine field of {sup 29}Si. By increasing the contact area between the insulation layer and the conducting channel, the ∼2% magneto-conductance response may be considerably enhanced.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Antiferromagnetic V 2 ⁢O 3 based exchange coupling

Vanadium sesquioxide (V 2 ⁢O 3 ) is a strongly correlated electronic material that famously undergoes a triple coupled first-order transition where it transitions from a paramagnetic metal with a rhombohedral structure at high temperature to an antiferromagnetic insulator with a monoclinic structure. While several studies have used one of both electronic and structural transitions to control the properties of a heterostructure, evidence of magnetic coupling has notoriously yet to be found. In this paper, we report on a robust magnetic coupling between the antiferromagnetic (AFM) V 2 ⁢O 3 and ferromagnetic (FM) Permalloy (Py) layers that results in a significant exchange bias and strain-induced coercivity enhancement. We provide a temperature and angle-dependent study of magnetic properties, which clearly indicates exchange bias at the AFM/FM interface that appears at the onset of the metal-insulator transition. The magnitude of the exchange bias is strongest when the field is applied along the [001] V 2 ⁢O 3 crystallographic orientation which corresponds to an AFM spin configuration on the [110] surface. Here, this opens the door to designing and implementing novel functionalities in transition metal oxide-based computing using the connection between magnetism and the metal-insulator transition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Electromagnetic particle in cell modeling of the plasma focus: Current sheath formation and lift off

The shaping and formation of the current sheath takes place in the breakdown phase of a plasma focus device and critically controls the device performance. Electrostatic particle in cell codes, with magnetic effects ignored, have been used to model the breakdown phase. This Letter reports the successful development and implementation of an electromagnetic particle in cell (EMPIC) code, including magnetic effects self-consistently, to simulate the breakdown phase; from the ionization, localization and gliding discharge along the insulator to the time instant of current sheath lift off. The magnetic field was found to be appreciable from the time the current sheath came into contact with the anode with increased local current, initiating the voltage breakdown of the device as a result.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Magnetization around mix jets entering inertial confinement fusion fuel

Engineering features are known to cause jets of ablator materials to enter the fuel hot-spot in inertial confinement fusion implosions. The Biermann battery mechanism wraps them in a self-generated magnetic field. Here we show that higher-Z jets have an additional thermoelectric magnetic source term that is not present for hydrogen jets, verified here through a kinetic simulation. It has similar magnitude to the Biermann term. We then include this in an extended magneto-hydrodynamic approach to post process an xRAGE radiation-hydrodynamic implosion simulation. The simulation includes an accurate model for the capsule fill tube, producing a dense carbon jet that becomes wrapped in a 4000 T magnetic field. A simple spherical carbon mix model shows that this insulates the electron heat conduction enough to cause contraction of the jet to an optically thick equilibrium. The denser magnetized jet hydrodynamics could change its core penetration and therefore the final mix mass, which is known to be well correlated with fusion yield degradation. Fully exploring this will require self-consistent magneto-hydrodynamic simulations. Experimental signatures of this self-magnetization may emerge in the high energy neutron spectrum.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Pressure-induced concomitant topological and metal-insulator quantum phase transitions in Ce3Pd3Bi4

Abstract The electronic property and magnetic susceptibility of Ce 3 Pd 3 Bi 4 were systemically investigated from 18 to 290 K for varying values of cell volume using dynamic mean-field theory coupled with density functional theory. By extrapolating to zero temperature, the ground state of Ce 3 Pd 3 Bi 4 at ambient pressure is found to be a correlated semimetal due to insufficient hybridization. Upon applying pressure, the hybridization strength increases and a crossover to the Kondo insulator is observed at finite temperatures. The characteristic temperature signaling the formation of Kondo singlet, as well as the characteristic temperature associated with f -electron delocalization–localization change, simultaneously vanishes around a critical volume of 0.992 V 0 , suggesting that such metal–insulator transition is possibly associated with a quantum critical point. Finally, Wilson’s loop calculations indicate that the Kondo insulating side is topologically trivial, thus a topological transition also occurs across the quantum critical point.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Anion–Anion Bonding and Topology in Ternary Iridium Seleno–Stannides

The synthesis and physical properties of two new and one known Ir–Sn–Se compound are reported. Their crystal structures are elucidated with transmission electron microscopy and powder X-ray diffraction. IrSn0.45Se1.55 is a pyrite phase which consists of tilted corner-sharing IrX6 octahedra with randomly distributed (Sn–Se)4– and (Se–Se)2– dimers. Ir2Sn3Se3 is a known trigonally distorted skutterudite that consists of cooperatively tilted corner-sharing IrSn3Se3 octahedra with ordered (Sn–Se)24– tetramers. Ir2SnSe5 is a layered, distorted β-MnO2 (pyrolusite) structure consisting of a double IrSe6 octrahedral row, corner sharing in the a direction and edge sharing in the b direction. This distorted pyrolusite contains (Se–Se)2– dimers and Se2– anions, and each double row is “capped” with a (Sn–Se)n polymeric chain. Resistivity, specific heat, and magnetization measurements show that all three have insulating and diamagnetic behavior, indicative of low-spin 5d6 Ir3+. Electronic structure calculations on Ir2Sn3Se3 show a single, spherical, nonspin–orbit split valence band and suggest that Ir2Sn3Se3 is topologically nontrivial under tensile strain due to inversion of Ir-d and Se-p states.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Supercapacitance and superinductance of TiN and NbTiN films in the vicinity of superconductor-to-insulator transition

We investigate the low-temperature complex impedance of disordered insulating thin TiN and NbTiN films in the frequency region 400 Hz–1 MHz in close proximity to the superconductor–insulator transition (SIT). The frequency, temperature, and magnetic field dependencies of the real and imaginary parts of the impedance indicate that in full accord with the theoretical predictions and earlier observations, the films acquire self-induced electronic granularity and become effectively random arrays of superconducting granules coupled via Josephson links. Accordingly, the inductive component of the response is due to superconducting droplets, while the capacitive component results from the effective Josephson junctions capacitances. The impedance crosses over from capacitive to inductive behavior as films go across the transition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

High-temperature superconducting undulator magnets

Here, this paper presents test results on a prototype superconducting undulator magnet fabricated using 15% Zr-doped rare-earth barium copper oxide high temperature superconducting (HTS) tapes. On an 11-pole magnet we demonstrate an engineering current density, J e , of more than 2.1 kA mm -2 at 4.2 K, a value that is 40% higher than reached in comparable devices wound with NbTi-wire, which is used in all currently operating superconducting undulators. A novel winding scheme enabling the continuous winding of tape-shaped conductors into the intricate undulator magnets as well as a partial interlayer insulation procedure were essential in reaching this advance in performance. Currently, there are rapid advances in the performance of HTS; therefore, achieving even higher current densities in an undulator structure or/and operating it at temperatures higher than 4.2 K will be possible, which would substantially simplify the cryogenic design and reduce overall costs.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Thin Film Approaches to the SRF Cavity Problem Fabrication and Characterization of Superconducting Thin Films

Superconducting Radio Frequency (SRF) cavities are responsible for the acceleration of charged particles to relativistic velocities in most modern linear accelerators, such as those employed at high-energy research facilities like Thomas Jefferson National Laboratory’s CEBAF and the LHC at CERN. Recognizing SRF as primarily a surface phenomenon enables the possibility of applying thin films to the interior surface of SRF cavities, opening a formidable tool chest of opportunities by combining and designing materials that offer greater performance benefit. Thus, while improvements in radio frequency cavity design and refinements in cavity processing techniques have improved accelerator performance and efficiency – 1.5 GHz bulk niobium SRF cavities have achieved accelerating gradients in excess of 35 MV/m – there exist fundamental material bounds in bulk superconductors limiting the maximally sustained accelerating field gradient (≈ 45 MV/m for Nb) where inevitable thermodynamic breakdown occurs. With state of the art Nb based cavity design fast approaching these theoretical limits, novel material innovations must be sought in order to realize next generation SRF cavities. One proposed method to improve SRF performance is to utilize thin film superconducting-insulating-superconducting (SIS) multilayer structures to effectively magnetically screen a bulk superconducting layer such that it can operate at higher field gradients before suffering critically detrimental SRF losses. This dissertation focuses on the production and characterization of thin film superconductors for such SIS layers for radio frequency applications. Correlated studies on structure, surface morphology and superconducting properties of epitaxial Nb and MgB2 thin films are presented.

Beringer, Douglas↗