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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,099 records · Page 61
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon

Achieving high quantum efficiency in long-wavelength LEDs has posed a significant challenge to the solid-state lighting and display industries. In this article, we use V-defect engineering as a technique to achieve higher efficiencies in red InGaN LEDs on (111) Si through lateral injection. We investigate the effects of superlattice structure on the V-defect distribution, the electroluminescence properties, and the external quantum efficiency. Increasing the relative thickness of In in the InGaN/GaN superlattice and the total superlattice thickness correlate with a reduction of active region defects and increased external quantum efficiencies. The highest measured on-chip EQE was 0.15% and based on Monte-Carlo ray tracing simulations for light extraction we project this would correspond to a flip-chip EQE of ~2.5%.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Analysis of Crystalline Defects Caused by Growth on Partially Planarized Spalled (100) GaAs Substrates

We analyze the effect of growth on non-(100) surfaces resulting from incomplete planarization of spalled GaAs wafers on the defect structure of GaAs solar cell layers grown by hydride vapor phase epitaxy (HVPE). Controlled spalling of (100)-oriented GaAs has the potential to reduce substrate costs for III-V epitaxy; however, it creates regularly faceted surfaces that may complicate the growth of high-quality III-V optoelectronic devices. We leverage the anisotropic growth rate of HVPE to planarize these faceted GaAs substrates, reducing the surface roughness and degree of faceting. We observe degraded solar cell performance and material quality in sample areas where facets are not completely removed. We used dark lock-in thermography and photoluminescence to identify recombination in areas that were not fully planarized. We used cathodoluminescence to identify the presence of extended defects in these regions, which are correlated with bandgap fluctuations in the material. We hypothesize that these defects were created by strain from compositional fluctuations in ternary alloys grown on the faceted surfaces. This work elucidates the potential issues of solar cells grown on faceted surfaces and builds understanding toward realizing high performance III-V photovoltaics with the cost-reduction potential of controlled spalling.

14 SOLAR ENERGY↗
NASA NTRS2003

Patterns of software defect data on spacecraft

The identification of patterns of software defect data yields insights into improving the quality of both operational and future spacecraft. This paper describes the results of applying this technique to both post-launch and pre-launch spacecraft. It then describes four key challenges that remain to achieving fuller utilization of defect analysis in future systems.

software defect defect analysis defect data↗
DOE OSTI2018

Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

Abstract Cation‐based resistive switching (RS) devices, dominated by conductive filaments (CF) formation/dissolution, are widely considered for the ultrahigh density nonvolatile memory application. However, the current‐retention dilemma that the CF stability deteriorates greatly with decreasing compliance current makes it hard to decrease operating current for memory application and increase driving current for selector application. By centralizing/decentralizing the CF distribution, this current‐retention dilemma of cation‐based RS devices is broken for the first time. Utilizing the graphene impermeability, the cation injecting path to the RS layer can be well modulated by structure‐defective graphene, leading to control of the CF quantity and size. By graphene defect engineering, a low operating current (≈1 µA) memory and a high driving current (≈1 mA) selector are successfully realized in the same material system. Based on systematically materials analysis, the diameter of CF, modulated by graphene defect size, is the major factor for CF stability. Breakthrough in addressing the current‐retention dilemma will instruct the future implementation of high‐density 3D integration of RS memory immune to crosstalk issues.

Zhao, Xiaolong↗
DOE OSTI2018

Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface

Vertically aligned nanocomposite thin films with ordered two phases, grown epitaxially on substrates, have attracted tremendous interest in the past decade. These unique nanostructured composite thin films with large vertical interfacial area, controllable vertical lattice strain, and defects provide an intriguing playground, allowing for the manipulation of a variety of functional properties of the materials via the interplay among strain, defect, and interface. This field has evolved from basic growth and characterization to functionality tuning as well as potential applications in energy conversion and information technology. Lastly, the remarkable progress achieved in vertically aligned nanocomposite thin films from a perspective of tuning functionalities through control of strain, defect, and interface is summarized.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Local p‐ and n‐Type Doping of an Oxide Semiconductor via Electric‐Field‐Driven Defect Migration

Layered oxides exhibit high ionic mobility and chemical flexibility, attracting interest as cathode materials for lithium-ion batteries and the pairing of hydrogen production and carbon capture. Recently, layered oxides emerged as highly tunable semiconductors. For example, by introducing anti-Frenkel defects, the electronic hopping conductance in hexagonal manganites is increased locally by orders of magnitude. Here, local acceptor and donor doping in Er(Mn,Ti)O3 is demonstrated, facilitated by the controlled splitting of anti-Frenkel defects under applied d.c. voltage. By combining density functional theory calculations, scanning probe microscopy, atom probe tomography, and scanning transmission electron microscopy, it is shown that the oxygen defects can readily be moved through the layered crystal structure, leading to nano-sized interstitial-rich (p-type) and vacancy-rich (n-type) regions. The resulting pattern is comparable to dipolar npn-junctions and stable on the timescale of days. These findings reveal the possibility of temporarily functionalizing oxide semiconductors at the nanoscale, giving additional opportunities for the field of oxide electronics and the development of transient electronics in general.

He, Jiali↗
DOE OSTI2018

Pristine or Highly Defective? Understanding the Role of Graphene Structure for Stable Lithium Metal Plating

The role of graphene host structure/chemistry in plating–stripping in lithium metal anodes employed for lithium metal batteries is first examined in this study. Structural and chemical defects are bad, since highly defective graphene promotes unstable solid electrolyte interphase (SEI) growth. This consumes the fluoroethylene carbonate (FEC) additive in the carbonate electrolyte and is correlated with rapid decay in Coulombic efficiency (CE) and formation of filament-like Li dendrites. A unique flow-aided sonication exfoliation method is employed to synthesize “defect-free” graphene (df-G), allowing for a direct performance comparison with conventional reduced graphene oxide (r-GO). At cycle 1, the r-GO is better electrochemically wetted by Li than df-G, indicating that initially it is more lithiophilic. With cycling, the nucleation overpotential with r-GO becomes higher than with df-G, indicating less facile plating reactions. The df-G yields state-of-the-art electrochemical performance, with the post cycled metal surface being relatively smooth and dendrite-free. Conversely, r-GO templates have CE rapidly degrade from the onset, with extensive dendrites after cycling. Severe SEI growth and associated FEC depletion with r-GO are further confirmed by electrochemical impedance analysis and surface science methods. Finally, a new design rule is provided for Li metal templates: An ideal host must be noncatalytic toward SEI formation.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Blue Light Emitting Defective Nanocrystals Composed of Earth‐Abundant Elements

Abstract Copper‐based ternary (I–III–VI) chalcogenide nanocrystals (NCs) are compositionally‐flexible semiconductors that do not contain lead (Pb) or cadmium (Cd). Cu‐In‐S NCs are the dominantly studied member of this important materials class and have been reported to contain optically‐active defect states. However, there are minimal reports of In‐free compositions that exhibit efficient photoluminescence (PL). Here, we report a novel solution‐phase synthesis of ≈4 nm defective nanocrystals (DNCs) composed of copper, aluminum, zinc, and sulfur with ≈20 % quantum yield and an attractive PL maximum of 450 nm. Extensive spectroscopic characterization suggests the presence of highly localized electronic states resulting in reasonably fast PL decays (≈1 ns), large vibrational energy spacing, small Stokes shift, and temperature‐independent PL linewidth and PL lifetime (between room temperature and ≈5 K). Furthermore, density functional theory (DFT) calculations suggest PL transitions arise from defects within a CuAl 5 S 8 crystal lattice, which supports the experimental observation of highly‐localized states. The results reported here provide a new material with unique optoelectronic characteristics that is an important analog to well‐explored Cu‐In‐S NCs.

Hansen, Eric C.↗
DOE OSTI2020

Refractive Imaging of Air Shock Above Microscale Defects in Pentaerythritol Tetranitrate (PETN) Films

Physical vapor deposition (PVD) of high explosives can produce energetic samples with unique microstructure and morphology compared to traditional powder processing techniques, but challenges may exist in fabricating explosive films without defects. Deposition conditions and substrate material may promote microcracking and other defects in the explosive films. Here, we investigate effects of engineered microscale defects (gaps) on detonation propagation and failure for pentaerythritol tetranitrate (PETN) films using ultra-high-speed refractive imaging and hydrocode modelling. Observations of the air shock above the gap reveal significant instabilities during gap crossing and re-ignition.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Exact correlators on the Wilson loop in $$ \mathcal{N}=4 $$ SYM: localization, defect CFT, and integrability

We compute a set of correlation functions of operator insertions on the 1/8 BPS Wilson loop in N=4 SYM by employing supersymmetric localization, OPE and the Gram-Schmidt orthogonalization. These correlators exhibit a simple determinant structure, are position-independent and form a topological subsector, but depend nontrivially on the ’t Hooft coupling and the rank of the gauge group. When applied to the 1/2 BPS circular (or straight) Wilson loop, our results provide an infinite family of exact defect CFT data, including the structure constants of protected defect primaries of arbitrary length inserted on the loop. At strong coupling, we show precise agreement with a direct calculation using perturbation theory around the AdS 2 string worldsheet. We also explain the connection of our results to the “generalized Bremsstrahlung functions” previously computed from integrability techniques, reproducing the known results in the planar limit as well as obtaining their finite N generalization. Furthermore, we show that the correlators at large N can be recast as simple integrals of products of polynomials (known as Q-functions) that appear in the Quantum Spectral Curve approach. This suggests an interesting interplay between localization, defect CFT and integrability.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2019

An infrared bootstrap of the Schur index with surface defects

The infrared formula relates the Schur index of a 4d $\mathcal{N}$ = 2 theory to its wall-crossing invariant, a.k.a. BPS monodromy. A further extension of this formula, proposed by Córdova, Gaiotto and Shao, includes contributions by many types of line and surface defects. We study BPS monodromies in the presence of vortex surface defects of arbitrary vorticity for general class $\mathcal{S}$ theories of type A 1 engineered by UV curves with at least one regular puncture. The trace of these defect BPS monodromies is shown to coincide with the action of certain q-difference operators acting on the trace of the (pure) 4d BPS monodromy. We use these operators to develop a “bootstrap” (of traces) of BPS monodromies, relying only on their infrared properties, thereby reproducing the very general ultraviolet characterization of the Schur index.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2020

q-nonabelianization for line defects

We consider the q-nonabelianization map, which maps links L in a 3-manifold M to combinations of links $\tilde{L}$ in a branched N -fold cover $\tilde{M}$. In quantum field theory terms, q-nonabelianization is the UV-IR map relating two different sorts of defect: in the UV we have the six-dimensional (2, 0) superconformal field theory of type gl(N ) on M × R 2,1 , and we consider surface defects placed on L × {x 4 = x 5 = 0}; in the IR we have the (2, 0) theory of type gl (1) on $\tilde{M}$ × R 2,1 , and put the defects on $\tilde{L}$ × {x 4 = x 5 = 0}. In the case M = R 3 , q-nonabelianization computes the Jones polynomial of a link, or its analogue associated to the group U(N ). In the case M = C × R, when the projection of L to C is a simple non-contractible loop, q-nonabelianization computes the protected spin character for framed BPS states in 4d N = 2 theories of class S. In the case N = 2 and M = C × R, we give a concrete construction of the q-nonabelianization map. The construction uses the data of the WKB foliations associated to a holomorphic covering $\tilde{C}$ →C.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Probing supersymmetric black holes with surface defects

It has long been conjectured that the large N deconfinement phase transition of $\mathcal{N}$ = 4 SU(N) super-Yang-Mills corresponds via AdS/CFT to the Hawking-Page transition in which black holes dominate the thermal ensemble, and quantitative evidence of this has come through the recent matching of the superconformal index of $\frac{1}{16}$-BPS states to the supersymmetric black hole entropy. Here we introduce the half-BPS Gukov-Witten surface defect as a probe of the superconformal index, which also serves as an order parameter for the deconfinement transition. This can be studied directly in field theory as a modification of the usual unitary matrix model or in the dual description as a D3-brane probe in the background of a (complex) supersymmetric black hole. Using a saddle point approximation, we determine our defect index in the large N limit as a simple function of the chemical potentials and show independently that it is reproduced by the renormalized action of the brane in the black hole background. Along the way, we also comment on the Cardy limit and the thermodynamics of the D3-brane in the generalized ensemble. The defect index sharply distinguishes between the confining and the deconfining phases of the gauge theory and thus is a supersymmetric non-perturbative order parameter for these large N phase transitions which deserves further investigation. Finally, our work provides an example where the properties of a black hole coupled to an external system can be analyzed precisely.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Non-invertible defects from the Conway SCFT to K3 sigma models. Part I. General results

We initiate the study of supersymmetry-preserving topological defect lines (TDLs) in the Conway moonshine module V f♮ . We show that the tensor category of such defects, under suitable assumptions, admits a surjective but non-injective ring homomorphism into the ring of $\mathbb{Z}$-linear maps of the Leech lattice into itself. This puts strong constraints on possible defects and their quantum dimensions. We describe a simple construction of non-invertible TDLs from orbifolds of holomorphic (super)vertex operator algebras, which yields non-trivial examples of TDLs satisfying our main theorem. We conjecture a correspondence between four-plane-preserving TDLs in V f♮ and supersymmetry-preserving TDLs in K3 non-linear sigma models, which extends the correspondence between symmetry groups to the level of tensor category symmetry. We establish evidence for this conjecture by constructing non-invertible TDLs in special K3 non-linear sigma models.

Conformal Field Models in String Theory↗
DOE OSTI2018

IR Thermographic Analysis of 3D Printed CFRP Reference Samples with Back-Drilled and Embedded Defects

Carbon-fiber composite structures may demonstrate a defective behavior due to manufacturing induced anomalies (delamination, dis-bonds) or service related defectives (impact damage, water ingress). Thus, there is a need for a relatively fast and low cost non-intrusive testing schemes such as infrared thermography (IRT). Still, thermography testing requires calibrated samples and coupons to yield best results. The presented research demonstrates the novel use of 3D printing technology to generate IRT calibration samples. In this text, two carbon fiber reinforced polymer samples are 3D printed; the first mimics a 'back-drilled holes' type coupons, while the other is designed to embed air pockets similar to Teflon inserts. The generated samples are then tested using two IRT modalities; namely pulse thermography and lock-in thermography. Furthermore, the resulted thermograms are processed using a principle component analysis, to help highlight the variance of defectives in a consistent manner among the samples. This research findings offer insights on the variation of detectability between embedded and back-printed samples, which might be due to the inserts thickness.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Localized Modes Due to Defects in High Contrast Periodic Media Via Two-Scale Homogenization

The spectral problem for an infinite periodic medium perturbed by a compact defect is considered. For a high contrast small ε-size periodicity and a finite size defect we consider the critical ε{sup 2}-scaling for the contrast. We employ two-scale homogenization for deriving asymptotically explicit limit equations for the localized modes and associated eigenvalues. Those are expressed in terms of the eigenvalues and eigenfunctions of a perturbed version of a two-scale limit operator introduced by V. V. Zhikov with an emergent explicit nonlinear dependence on the spectral parameter for the spectral problem at the macroscale. Using the method of asymptotic expansions supplemented by a high contrast boundary layer analysis, we establish the existence of the actual eigenvalues near the eigenvalues of the limit operator, with “ε square root” error bounds. An example for circular or spherical defects in a periodic medium with isotropic homogenized properties is given.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2019

Imaginary modulation inducing giant spatial Goos–Hänchen shifts in one-dimensional defective photonic lattices

We investigate the spatial Goos–Hänchen (GH) shifts in one-dimensional defective photonic lattices by modulating the imaginary part of refractive index, namely, the imaginary modulation. The reflection spectra possess two singular points under imaginary modulation when the reflectance is infinite or vanishing. These two points correspond to the coherent-perfect-absorption-laser (CPA-LP) point and defect mode (MD) in the parameter space composed of the incident angle and refractive index. We show the spatial GH shifts are extremely giant in the vicinity of CPA-LP and MD as the phase of reflection coefficients dislocate. Moreover, the GH shifts are sensitive to the incident angle and the refractive index of defect. The sensitivity coefficients can reach as high as 10{sup 6}. The study may find potential applications in highly sensitive sensors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Unique Challenges for Modeling Defect Dynamics in Concentrated Solid-Solution Alloys

Recently developed concentrated solid solution alloys (CSAs) are shown to have improved irradiation performance that strongly depends on the number of alloying elements, alloying species and their concentrations. In contrast to conventional dilute alloys, CSAs are comprised of multiple principal elements randomly situated in a simple crystalline lattice. As a result, the intrinsic disorder has a profound influence on the energy dissipation pathways and defect evolution when these CSAs are subjected to ion irradiation. Extraordinary irradiation resistance, including suppression of void formation by two orders magnitude at an elevated temperature, has been achieved with increasing compositional complexity in CSAs. Yet, the intrinsic disorder poses great challenges to theoretical modelling at the electronic and atomic level. Based on recent computer simulation results from a novel set of Ni-based face-centered cubic CSAs, we demonstrate in this review that how the disorder can be tackled in theoretical modeling and what is the impact of disorder on the defect dynamics. Finally, the unique challenges of describing the energy dissipation and defect evolution in CSAs are discussed.

36 MATERIALS SCIENCE↗