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At least 1,117 records · Page 62

Local geometric and electronic structures and origin of magnetism in Co-doped BaTiO{sub 3} multiferroics

We have prepared polycrystalline samples BaTi{sub 1−x}Co{sub x}O{sub 3} (x = 0–0.1) by solid-state reaction. X-ray diffraction and Raman-scattering studies reveal the phase separation in crystal structure as changing Co-doping content (x). The samples with x = 0–0.01 are single phase in a tetragonal structure. At higher doping contents (x > 0.01), there is the formation and development of a secondary hexagonal phase. Magnetization measurements at room temperature indicate a coexistence of paramagnetic and weak-ferromagnetic behaviors in BaTi{sub 1−x}Co{sub x}O{sub 3} samples with x > 0, while pure BaTiO{sub 3} is diamagnetic. Both these properties increase with increasing x. Analyses of X-ray absorption spectra recorded from BaTi{sub 1−x}Co{sub x}O{sub 3} for the Co and Ti K-edges indicate the presence of Co{sup 2+} and Co{sup 3+} ions. They locate in the Ti{sup 4+} site of the tetragonal and hexagonal BaTiO{sub 3} structures. Particularly, there is a shift of oxidation state from Co{sup 2+} to Co{sup 3+} when Co-doping content increases. We believe that the paramagnetic nature in BaTi{sub 1−x}Co{sub x}O{sub 3} samples is due to isolated Co{sup 2+} and Co{sup 3+} centers. The addition of Co{sup 3+} ions enhances the paramagnetic behavior. Meanwhile, the origin of ferromagnetism is due to lattice defects, which is less influenced by the changes caused by the variation in concentration of Co{sup 2+} and Co{sup 3+} ions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

X-Ray And Polarized Neutron Reflectometry: Characterization Of Si/Co/Si And Si/Ni/Si Systems

Technologically important metal silicides formed through interdiffusion in metal/Si systems has been probed using two complementary techniques viz. x-ray reflectivity (XRR) and polarized neutron reflectivity (PNR). Both structural and magnetic characterization with good depth resolution has been achieved in these systems. We have studied two systems Si/Co/Si and Si/Ni/Si which relate to important applications in ferromagnetic/ non-magnetic semiconductor layered structures for memory devices.

36 MATERIALS SCIENCE↗

Studies on magnetic properties of chemically synthesized crystalline calcium ferrite nanoparticles

Spinel-type ferrites have taken a very important role for modern electronic industry. Most of these ferrites exhibit low-loss dielectric properties, high resistivity, low eddy current and also high temperature ferromagnetism. Calcium ferrite is one such important metal oxide which is environmentally safe, chemically stable, low cost and greatly abundant. This outstanding material of calcium ferrite is synthesized by a simple chemical precipitation method using NaOH as the precipitating agent. Ferric chloride anhydrous (FeCl{sub 3}) and Calcium chloride dihydrate (CaCl{sub 2}.2H{sub 2}O) were used as iron and calcium sources respectively. The samples were heated at 200°C for 8h to obtain homogeneous powder of Calcium ferrite. The powders were characterized by using X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), Transmission electrical microscopy (TEM), and Fourier transform infrared spectroscopic (FTIR) measurements. The polycrystalline nature of the sample was confirmed by X-ray diffraction study. The magnetic properties of the sample were investigated by vibrating sample magnetometer (VSM) measurements. Magnetization curve of the prepared sample depicts that as synthesized calcium ferrite nanoparticles have saturation magnetic moment of 1.74 emu/g and the coercivity of 35.08 Oe with superparamagnetic behavior. The synthesized calcium ferrite nanoparticles with such magnetic properties will be a candidate material for different applications in electronics and exploring its functionality in the field of recently developing semiconductor device physics and spintronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Effects of oxygen vacancy on the magnetic properties of Cr-doped SnO{sub 2}: Density functional investigation

Magnetic properties of Cr-doped SnO{sub 2} and the effects of oxygen vacancy (V{sub O}) on the magnetic properties are examined to understand the origin of ferromagnetism in Cr-doped SnO{sub 2} and explain the observed discrepant phenomena. Cr-doped SnO{sub 2} shows a p-d hopping ferromagnetic interaction that decreases gradually with the increase in Cr-Cr distance. In Cr-doped SnO{sub 2} with V{sub O}, ferromagnetic interaction is obviously weakened. Exchange constants indicate that the ferromagnetic exchange interaction in Cr-doped SnO{sub 2} is similar to that in Co-doped SnO{sub 2}, while it is similar to that in Fe-doped SnO{sub 2} and/or undoped SnO{sub 2} with tin vacancy (V{sub Sn}) in the presence of V{sub O}. -- Graphical Abstract: We studied the magnetic properties in Cr-doped SnO{sub 2} by means of the first-principles calculations. It indicated that introduction of oxygen vacancy obviously weakened the ferromagnetic coupling, which could give a rational explanation for the discrepancies in experimental observations. Display Omitted

36 MATERIALS SCIENCE↗

Switching of a Magnet by Spin-Orbit Torque from a Topological Dirac Semimetal

Recent experiments show that topological surface states (TSS) in topological insulators (TI) can be exploited to manipulate magnetic ordering in ferromagnets. In principle, TSS should also exist for other topological materials, but it remains unexplored as to whether such states can also be utilized to manipulate ferromagnets. In this paper, current-induced magnetization switching enabled by TSS in a non-TI topological material, namely, a topological Dirac semimetal α-Sn, is reported. The experiments use an α-Sn/Ag/CoFeB trilayer structure. The magnetization in the CoFeB layer can be switched by a charge current at room temperature, without an external magnetic field. The data show that the switching is driven by the TSS of the α-Sn layer, rather than spin-orbit coupling in the bulk of the α-Sn layer or current-produced heating. The switching efficiency is as high as in TI systems. This shows that the topological Dirac semimetal α-Sn is as promising as TI materials in terms of spintronic applications.

36 MATERIALS SCIENCE↗

Crack detection using pulsed eddy current stimulated thermography

This contribution presents results from studies investigating factors that influence the detection of surface breaking cracks using pulsed eddy current thermography. The influences of the current strength and crack orientation in both ferromagnetic and non-ferromagnetic metals have been investigated. It has been found that crack detection is far more sensitive to crack orientation in non-ferromagnetic metals than in ferromagnetic metals. The effects of crack size on detectability are presented for a large number of steel, nickel alloy and titanium samples. Results of studies comparing crack images obtained prior and after coating a nickel alloy sample with a thermal barrier coating are presented.

36 MATERIALS SCIENCE↗

Polycrystalline iron nitride films fabricated by reactive facing-target sputtering: Structure, magnetic and electrical transport properties

Structure, magnetic and electrical transport properties of the reactive sputtered iron nitride films fabricated at different substrate temperatures (T{sub s}) and nitrogen flow rates (F{sub N{sub 2}}) were investigated systematically. The single-phase polycrystalline {gamma}'-Fe{sub 4}N film was obtained at F{sub N{sub 2}} = 20 sccm and T{sub s} = 450 deg. C. The films are soft ferromagnetic at room temperature. The electrical resistivity ({rho}) of the films fabricated at different F{sub N{sub 2}} and T{sub s} decreases with the decreasing temperature, showing a metallic behavior. Meanwhile, a variety of magnetoresistance (MR) behaviors were observed depending on the applied magnetic field and measuring temperature. It can be deduced that the complex MR behaviors are dominated by Lorentz force, spin-orbit interaction, and weak localization effect.

36 MATERIALS SCIENCE↗

A Model Study of Substrate Effect on the Neutron-Scattering Spectra of Ferromagnetic Ordered Graphene

Graphene as a possible new magnetic material has stimulated research interest for application in spintronic devices. Pristine graphene does not show magnetism due to equivalence of the two sub-lattices of carbon atoms. It is predicted that impurity effects, substrate-induced gap, and defects, are expected to produce in-equivalence in two carbon sub-lattices leading to magnetism. The spins on the same sub-lattices are found to exhibit ferromagnetic order and spins of different sub-lattices are found to exhibit anti-ferromagnetic order. We consider here impurity and substrate effects as the cause of generation of magnetism in graphene. We report here a microscopic tight-binding study of frequency-dependent neutron scattering spectra for ferromagnetic ordering in the graphene systems. The tight-binding Hamiltonian consists of electron hoppings upto third nearest neighbors and substrate and impurity effects in the presence of Coulomb interaction of electrons separately at two in-equivalent A and B sub-lattices of graphene. We calculate the two-particle electron Green’s functions by using Zubarev’s Green’s function technique. The frequency-dependent scattering intensity of the system is computed numerically. The spectra displays a sharp peak at the neutron momentum transfer energy at low energies and another higher-energy peak appearing at substrate-induced gap.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Enhancing Magnetic Functionality with Scandium: Breaking Stereotypes in the Design of Rare Earth Materials

Replacement of strongly magnetic gadolinium with weakly magnetic scandium unexpectedly enhances ferromagnetic interactions in (Gd 1–x Sc x ) 5 Ge 4 . Based upon this counterintuitive experimental finding we demonstrate the unique role 3d 1 electrons of scandium atoms play in mediating magnetic interactions between the gadolinium atoms from the neighboring layers in the Sm 5 Ge 4 -type crystal lattice. Scandium substitutions at and below 20% rapidly increase the Curie temperature, TC, of the Gd 5 Ge 4 parent, eliminate both the kinetic arrest and hysteresis, and drastically improve reversibility of the first-order magnetostructural transformation at T C . In agreement with first-principles predictions, higher than 20% Sc leads to the formation of a closely related Pu 5 Rh 4 -type structure where the first-order magnetostructural transformation is replaced by a conventional second-order ferromagnetic ordering that remains accompanied by a continuous rearrangement of the crystal lattice. In conclusion, comparison of two materials with similar structures and compositions shows that significantly stronger magnetocaloric effect occurs in the first-order material, which also shows very small hysteresis. Furthermore, we demonstrate that a behavior of a specific interatomic distance can predict anomalous physical properties in a series of alloys where compositional dependence of lattice parameters suggests a rather trivial solid solubility and uninteresting magnetism.

36 MATERIALS SCIENCE↗

Weak ferromagnetism and temperature dependent dielectric properties of Zn{sub 0.9}Ni{sub 0.1}O diluted magnetic semiconductor

Highlights: • Single phase wurtzite structure was confirmed from XRD analysis. • Weak ferromagnetic behaviour at room temperature. • Pure semiconducting properties confirmed from temperature dependent conductivity. • Smaller dielectric properties at higher frequency. • Possible potential application in high frequency spintronic devices. - Abstract: In this study the room temperature ferromagnetic behaviour and dielectric properties of ZnO based diluted magnetic semiconductor (DMS) have been investigated using nominal chemical composition Zn{sub 0.9}Ni{sub 0.1}O. The X-ray diffraction analysis confirmed formation of single phase hexagonal wurtzite structure. An increase in grain size with increasing sintering temperature was observed from scanning electron microscopy. Field dependent DC magnetization values indicated dominant paramagnetic ordering along with a slight ferromagnetic behaviour at room temperature. Frequency dependent complex initial permeability showed some positive values around 12 at room temperature. In dielectric measurement, an increasing trend of complex permittivity, loss tangent and ac conductivity with increasing temperature were observed. The temperature dependent dispersion curves of dielectric properties revealed clear relaxation at higher temperature. Frequency dependent ac conductivity was found to increase with frequency whereas complex permittivity and loss tangent showed an opposite trend.

36 MATERIALS SCIENCE↗

Large half-metallic gap in ferromagnetic semi-Heusler alloys CoCrP and CoCrAs

We investigate the electronic structure and magnetism of semi-Heusler alloys CoCrP and CoCrAs using the full-potential linearized augmented plane wave method. The calculations reveal that CoCrP and CoCrAs are half-metallic (HM) ferromagnets with the same magnetic moment of 2.00 {mu}{sub B} per formula unit. Both alloys have large half-metallic gaps (up to 0.50 eV) and wide band gaps (above 1 eV). The half-metallicity of CoCrP and CoCrAs can be retained even when their lattice constants are changed by -4.8% to 6.6% and -7.7% to 4.5%, respectively. The two alloys show great promise in the applications of spin valve and magnetic tunnel junction.

36 MATERIALS SCIENCE↗

Effect of the Milling Conditions on the Properties of ZnO Doped with Fe

(Zn{sub 0.9}Fe{sub 0.1})O powders were produced with different ball to powder weight ratios (BPR) by ball milling of ZnO and Fe elemental powders. The BPR used were 15:1, 20:1, 25:1, and 30:1. The prepared samples were studied by x-ray diffraction (XRD), vibrating sample magnetometer (VSM), and Mössbauer spectroscopy (MS). The XRD patterns showed a zinc oxide (ZnO) single phase with wurtzite structure, except for the 15:1 ratio, which exhibits an additionally bcc structure associated to α-Fe. The mean crystallite sizes were found to be around 100 Å. The Mössbauer spectra were fitted using two doublets, associated to the incorporation of Fe ions into the ZnO lattice, which correspond to the Fe{sup 3+} and Fe{sup 2+} oxidation states except for the 15:1 ratio, for which an additional sextet was necessary to obtain a good fit, this sextet was associated to segregated Fe into the sample. The increase of the BPR allowed that all Fe penetrated into the ZnO matrix. The magnetization measurement using VSM reveals that the system exhibits ferromagnetic behavior at room temperature. For sample with BPR 15:1, the ferromagnetism is due to the segregated Fe, and for higher BPRs, from 20:1 up to 30:1, we propose that their ferromagnetism is due to the percolation of polarons. These polarons appear due to the oxygen vacancies (detected by XRD) which are occupied by electrons, which appear in the charge balance. Exchange interaction between the electron spins located in the vacancies or holes and those of the magnetic impurities (Fe atoms) leads to the formation of bound magnetic polarons, which percolate, producing in this way magnetic behavior.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Advances in methods to obtain and characterise room temperature magnetic ZnO

We report the existence of magnetic order at room temperature in Li-doped ZnO microwires after low energy H{sup +} implantation. The microwires with diameters between 0.3 and 10 μm were prepared by a carbothermal process. We combine spectroscopy techniques to elucidate the influence of the electronic structure and local environment of Zn, O, and Li and their vacancies on the magnetic response. Ferromagnetism at room temperature is obtained only after implanting H{sup +} in Li-doped ZnO. The overall results indicate that low-energy proton implantation is an effective method to produce the necessary amount of stable Zn vacancies near the Li ions to trigger the magnetic order.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Half-metallic ferromagnetism in Cr-doped semiconducting Ge-chalcogenide: Density functional approach

A supercell approach has been used to calculate the electronic and magnetic properties of Cr-doped Ge chalcogenide, Ge{sub 1−x}Cr{sub x}Te (x = 0.25 and 0.125). The calculations have been performed using full potential Linear Augmented Plane Wave (FPLAPW) method within generalized gradient approximation (GGA) as exchange-correlation (XC) potential. The calculated results show that the doping of Cr induces the 100% spin polarization at Fermi level (EF) and showed the robust half metallic ferromagnetism in this compound. Thus, the compound at both dopant concentrations behave as dilute magnetic semiconductor (DMS) showing metallic property in majority and semiconducting for minority spin channels which is best suited for spintronic applications. The total magnetic moments of this compound are mainly due to Cr-d states present at E{sup F} with negligible contribution from electronic states of other atoms.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Revealing Robust Room Temperature Ferromagnetism in Gd‐Doped Few‐Layered MoS 2 Thin Films

2D MoS 2 holds great promise for spintronics, yet is limited by intrinsic diamagnetism. This study demonstrates inducing ferromagnetic behavior in MoS 2 films doped with 0.47% Gd, achieving an ultrahigh saturation magnetization of 454 emu/cm 3 in a few‐layered film over 11‐times higher than bulk films (40 nm). Raman spectroscopy, X‐ray photoelectron spectroscopy, X‐ray magnetic circular dichroism, and density functional theory (DFT) calculations reveal an interplay between Gd dopants and Mo, S vacancies (V 1Mo+2S ), leading to the formation of bound magnetic polarons (BMPs) that drive ferromagnetic ordering. H 2 S annealing and DFT calculations reveal that defect healing reduces the saturation magnetization by 83%. High sulfur migration barrier in few‐layered films helps preserve BMPs, thereby sustaining ferromagnetism, whereas lower migration barriers in bulk films lead to suppression. These findings highlight the synergy between Gd doping and defect engineering in achieving ultrahigh room‐temperature ferromagnetism, offering a scalable strategy for developing high‐performance 2D magnetic materials for spintronic applications.

36 MATERIALS SCIENCE↗

Growth and characterization of large (Y,La)TiO 3 and (Y,Ca)TiO 3 single crystals

The Mott-insulating rare-earth titanates ( R TiO 3 , with R being a rare-earth ion) are an important class of materials that encompasses interesting spin-orbital phases as well as ferromagnet-antiferromagnet and insulator-metal transitions. The growth of these materials has been plagued by difficulties related to overoxidation, which arises from a strong tendency of Ti 3 + to oxidize to Ti 4 + . We describe our efforts to grow sizable single crystals of YTiO 3 , Y 1 - x La x TiO 3 ( x ≤ 0.25 ), and Y 1 - y Ca y TiO 3 ( y ≤ 0.35 ) with the optical traveling-solvent floating-zone technique. Finally, we present sample characterization via chemical composition analysis, magnetometry, charge transport, neutron scattering, x-ray absorption spectroscopy, and x-ray magnetic circular dichroism to understand macroscopic physical property variations associated with overoxidation. Furthermore, we demonstrate a good signal-to-noise ratio in inelastic magnetic neutron scattering measurements of spin-wave excitations. A superconducting impurity phase, found to appear in Ca-doped samples at high doping levels, is identified as TiO.

36 MATERIALS SCIENCE↗

Interaction of electromagnetic radiation with magnetically functionalized CNT nanocomposite in the subterahertz frequency range

The interaction of electromagnetic radiation with a magnetically functionalized nanocomposite based on carbon nanotubes (CNTs) is considered using the model of random distribution of ferromagnetic nanoparticles in the carbon matrix characterized by the presence of resistive–inductive–capacitive coupling (contours). The model is based on the representation of the nanocomposite as a system consisting of the CNT matrix, ferromagnetic nanoparticles, and the interfaces between CNTs and nanoparticles. The wide range of possible resonant phenomena caused both by the presence of contours and the properties of the CNT nanocomposite is shown.

36 MATERIALS SCIENCE↗

Exchange bias in a ferromagnet/antiferromagnet system with T{sub C}<<T{sub N}

This paper reports experimental results obtained on an unconventional exchange bias (EB) system where the ferromagnetic layer, Ni{sub 0.75}Cu{sub 0.25}, has lower ordering temperature (T{sub C}) than that (T{sub N}) of the antiferromagnetic one, NiO, with emphasis on modifying EB through either magnetic annealing or light-ion irradiation. Samples were cooled from temperatures higher than T{sub N} or in between T{sub C} and T{sub N} to room temperature with magnetic field applied in different in-plane directions. Upon ion irradiation, magnetic fields, parallel or antiparallel to the orientation of the field present during the films deposition, were applied to explore different effects on EB. We found that the EB direction can be completely reversed by means of either annealing or ion bombardment; however, both postdeposition treatments provide very little variation of the EB field value over that produced during the film's growth. The importance of the annealing field strength was also discussed. The results were interpreted based on a mechanism which assumes that the interfacial moments adjacent to the antiferromagnetic layer are responsible for establishing the exchange biasing in the paramagnetic state.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗