Surface and bulk effects of K in Cu 1-x K x In 1-y Ga y Se 2 solar cells
Two strategies for enhancing photovoltaic (PV) performance in chalcopyrite solar cells were investigated: Cu 1-x K x In 1-y Ga y Se 2 absorbers with low K content (K/(K+Cu), or x ~ 0.07) distributed throughout the bulk, and CuIn 1-y Ga y Se 2 absorbers with KIn 1-y Ga y Se 2 grown on their surfaces. Distributing K throughout the bulk absorbers improved power conversion efficiency, open-circuit voltage (VOC) and fill factor (FF) for Ga/(Ga+In) of 0, 0.3 and 0.5. Surface KIn 1-y Ga y Se 2 and bulk x ~ 0.07 Cu 1-x K x In 1-y Ga y Se 2 films with Ga/(Ga+In), or y of 0.3 and 0.5 also had improved efficiency, VOC, and FF, relative to CuIn 1-y Ga y Se 2 baselines. On the other hand, y ~ 1 absorbers did not benefit from K introduction. Similar to Cu 1-x K x InSe 2 , the formation of Cu 1-x K x GaSe 2 alloys was favored at low temperatures and high Na supply by the substrate, relative to the formation of mixed-phase CuGaSe 2 + KGaSe 2 . KIn 1-y Ga y Se 2 alloys were grown for the first time, as evidenced by X-ray diffraction and ultraviolet/visible spectroscopy. For all Ga/(Ga+In) compositions, the surface KIn 1-y Ga y Se 2 absorbers had superior PV performance in buffered and buffer-free devices. However, the bulk x ~ 0.07 absorbers only outperformed the baselines in buffered devices. The data demonstrate that KIn 1-y Ga y Se 2 passivates the surface of CuIn 1-y Ga y Se 2 to increase efficiency, VOC, and FF, while bulk Cu 1-x K x In 1-y Ga y Se 2 absorbers with x ~ 0.07 enhance efficiency, VOC, and FF by some other mechanism.