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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,153 records · Page 64
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Real-time atomic-resolution imaging of crystal growth process in water by phase modulation atomic force microscopy at one frame per second

Recent advancement in dynamic-mode atomic force microscopy (AFM) has enabled its operation in liquid with atomic-scale resolution. However, its imaging speed has often been too slow to visualize atomic-scale dynamic processes. Here, we propose a method for making a significant improvement in the operation speed of dynamic-mode AFM. In this method, we use a wideband and low-latency phase detector with an improved algorithm for the signal complexification. We demonstrate atomic-scale imaging of a calcite crystal growth process in water at one frame per second. The significant improvement in the imaging speed should enable various studies on unexplored atomic-scale interfacial processes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Random vs realistic amorphous carbon models for high resolution microscopy and electron diffraction

Amorphous carbon and amorphous materials in general are of particular importance for high resolution electron microscopy, either for bulk materials, generally covered with an amorphous layer when prepared by ion milling techniques, or for nanoscale objects deposited on amorphous substrates. In order to quantify the information of the high resolution images at the atomic scale, a structural modeling of the sample is necessary prior to the calculation of the electron wave function propagation. It is thus essential to be able to reproduce the carbon structure as close as possible to the real one. The approach we propose here is to simulate a realistic carbon from an energetic model based on the tight-binding approximation in order to reproduce the important structural properties of amorphous carbon. At first, we compare this carbon with the carbon obtained by randomly generating the carbon atom positions. In both cases, we discuss the limit thickness of the phase object approximation. In a second step, we show the influence of both carbons models on (i) the contrast of Cu, Ag, and Au single atoms deposited on carbon and (ii) the determination of the long-range order parameter in CoPt bimetallic nanoalloys.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Direct imaging of LaAlO{sub 3}/SrTiO{sub 3} nanostructures using piezoresponse force microscopy

The interface between LaAlO{sub 3} and TiO{sub 2}-terminated SrTiO{sub 3} can be switched between metastable conductive and insulating states using a conductive atomic force microscope probe. Determination of the nanoscale dimensions has previously required a destructive readout (e.g., local restoration of an insulating state). Here it is shown that high-resolution non-destructive imaging of conductive nanostructures can be achieved using a specific piezoresponse force microscopy (PFM) technique. Images of conductive and insulating nanoscale features are achieved with feature sizes as small as 30 nm. The measured nanowire width from PFM is well correlated with those obtained from nanowire erasure.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Coherent microscopy at resolution beyond diffraction limit using post-experimental data extrapolation

Conventional microscopic records represent intensity distributions whereby local sample information is mapped onto local information at the detector. In coherent microscopy, the superposition principle of waves holds; field amplitudes are added, not intensities. This non-local representation is spread out in space and interference information combined with wave continuity allows extrapolation beyond the actual detected data. Established resolution criteria are thus circumvented and hidden object details can retrospectively be recovered from just a fraction of an interference pattern.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Determination of crystal grain orientations by optical microscopy at textured surfaces

In this contribution, a new method to determine the crystal orientation with the example of chemical treated silicon wafers by means of optical microscopy has been demonstrated. The introduced procedure represents an easy method to obtain all relevant parameters to describe the crystal structure of the investigated material, i.e., the crystal grain orientation and the grain boundary character. The chemical treatment is a standard mono-texture for solar cells, well known in the solar industry. In general, this concept can also be applied to other crystalline materials, i.e., GaAs, SiC, etc., the only thing that needs to be adjusted is the texturing method to reveal specific crystal planes and the calculation model. In conclusion, an application of this method is shown with the example of the defect classification of recombination active defects in mc-Si solar cell. The introduced method demonstrates a simple and quick opportunity to improve the crystallization process and the quality of electronic devices by means of an optical microscope and a chemical treatment of the material.

14 SOLAR ENERGY↗
DOE OSTI2013

Actuation of atomic force microscopy microcantilevers using contact acoustic nonlinearities

A new method of actuating atomic force microscopy (AFM) cantilevers is proposed in which a high frequency (>5 MHz) wave modulated by a lower frequency (∼300 kHz) wave passes through a contact acoustic nonlinearity at the contact interface between the actuator and the cantilever chip. The nonlinearity converts the high frequency, modulated signal to a low frequency drive signal suitable for actuation of tapping-mode AFM probes. The higher harmonic content of this signal is filtered out mechanically by the cantilever transfer function, providing for clean output. A custom probe holder was designed and constructed using rapid prototyping technologies and off-the-shelf components and was interfaced with an Asylum Research MFP-3D AFM, which was then used to evaluate the performance characteristics with respect to standard hardware and linear actuation techniques. Using a carrier frequency of 14.19 MHz, it was observed that the cantilever output was cleaner with this actuation technique and added no significant noise to the system. This setup, without any optimization, was determined to have an actuation bandwidth on the order of 10 MHz, suitable for high speed imaging applications. Using this method, an image was taken that demonstrates the viability of the technique and is compared favorably to images taken with a standard AFM setup.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2013

Accurate spring constant calibration for very stiff atomic force microscopy cantilevers

There are many atomic force microscopy (AFM) applications that rely on quantifying the force between the AFM cantilever tip and the sample. The AFM does not explicitly measure force, however, so in such cases knowledge of the cantilever stiffness is required. In most cases, the forces of interest are very small, thus compliant cantilevers are used. A number of methods have been developed that are well suited to measuring low stiffness values. However, in some cases a cantilever with much greater stiffness is required. Thus, a direct, traceable method for calibrating very stiff (approximately 200 N/m) cantilevers is presented here. The method uses an instrumented and calibrated nanoindenter to determine the stiffness of a reference cantilever. This reference cantilever is then used to measure the stiffness of a number of AFM test cantilevers. This method is shown to have much smaller uncertainty than previously proposed methods. An example application to fracture testing of nanoscale silicon beam specimens is included.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2013

Compositional analysis of GaAs/AlGaAs heterostructures using quantitative scanning transmission electron microscopy

We demonstrate a method for compositional mapping of Al{sub x}Ga{sub 1–x}As heterostructures with high accuracy and unit cell spatial resolution using quantitative high angle annular dark field scanning transmission electron microscopy. The method is low dose relative to spectroscopic methods and insensitive to the effective source size and higher order lens aberrations. We apply the method to study the spatial variation in Al concentration in cross-sectioned GaAs/AlGaAs core-shell nanowires and quantify the concentration in the Al-rich radial band and the AlGaAs shell segments.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2013

Enhanced sensitivity and contrast with bimodal atomic force microscopy with small and ultra-small amplitudes in ambient conditions

Here, we introduce bimodal atomic force microscopy operated with sub-nm and ultra-small, i.e., sub-angstrom, first and second mode amplitudes in ambient conditions. We show how the tip can be made to oscillate in the proximity of the surface and in perpetual contact with the adsorbed water layers while the second mode amplitude and phase provide enhanced contrast and sensitivity. Nonlinear and nonmonotonic behavior of the experimental observables is discussed theoretically with a view to high resolution, enhanced contrast, and minimally invasive mapping. Fractions of meV of energy dissipation are shown to provide contrast above the noise level.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Scanning tunneling microscopy study of the superconducting properties of three-atomic-layer Pb films

Ultrathin Pb films with a thickness of three monolayers (ML) were prepared on α-√(3)×√(3)Pb/Si(111) (Pb-SIC) substrate by molecular beam epitaxy. Despite significant defect scattering, low temperature scanning tunneling microscopy reveals a high superconducting transition temperature T{sub c} of 6.9 K, compared with the bulk T{sub c} (7.2 K). By applying external magnetic field, magnetic vortices were directly imaged, which demonstrates the robustness of superconductivity. By comparing to nearly free-standing Pb films on graphitized SiC (0001) substrate, we suggest that the higher T{sub c} of 3 ML Pb films on Pb-SIC originates from the combined effects of quantum confinement and substrate-enhanced electron-phonon coupling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Difference of operation mechanisms in SWNTs network FETs studied via scanning gate microscopy

Field effect transistors (FETs) whose channel is composed of a network of single wall carbon nanotubes (SWNTs) have been studied to investigate the mechanism of the device operation via scanning gate microscopy (SGM) at room temperature. We observed different SGM response in networks of SWNTs either synthesized by CoMoCAT process or semiconducting enriched by density gradient ultracentrifuge process. In the former case, SGM response was observed at specific inter-tube junctions suggesting a Schottky junction formed with semiconducting and metallic SWNTs in the network. In contrast, multiple concentric rings in the SGM response are observed within the tubes in a network of the latter SWNTs suggesting a possibility of quantum mechanical transport at room-temperature. Different type of SGM responses are confirmed in the two kinds of SWNTs networks, nevertheless such active positions would likely have an important role in the FET operation mechanism in each network.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Low-temperature scanning tunneling microscopy and transport measurements on adsorbate-induced two-dimensional electron systems

We have performed not only magnetotransport measurements on two-dimensional electron systems (2DESs) formed at the cleaved surfaces of p-InAs but also observations of the surface morphology of the adsorbate atoms, which induced the 2DES at the surfaces of narrow band-gap semiconductors, with use of a scanning tunneling microscopy. The electron density of the 2DESs is compared to the atomic density of the isolated Ag adatoms on InAs surfaces.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Kinetics of linear domains in LiNbO{sub 3} single crystals polarized by scanning probe microscopy

Growth and decay processes of linear domains in lithium niobate single crystals fabricated utilizing scanning probe microscopy were investigated. It is found that the initial configuration of linear domains is dependent on the fabrication parameters as scan velocity and voltage. The linear domains decay at the part where the domain width is small for two different processes. A comparison of critical stable domain size between dot and linear domains was carried out. The critical linear domain width is 0.7 times as large as the critical diameter of dot domain at the same sample thickness due to their smaller surface energy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Probing the electronic structure of graphene sheets with various thicknesses by scanning transmission X-ray microscopy

The electronic structure of an aggregation of graphene sheets with various thicknesses was probed by scanning transmission X-ray microscopy. A uniform oxidation of the graphene sheets in the flat area was observed regardless of the thickness, while in the folded area the result could be strongly affected by the geometry. Moreover, thick parts of the aggregation showed strong angle-dependence to the incident X-ray, while thin parts showed less angle-dependence, which might be related to the surface wrinkles and ripples. The electronic structure differences due to the geometry and thickness suggest a complicated situation in the aggregation of graphene sheets.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2014

Separating strain from composition in unit cell parameter maps obtained from aberration corrected high resolution transmission electron microscopy imaging

Based on the evaluation of lattice parameter maps in aberration corrected high resolution transmission electron microscopy images, we propose a simple method that allows quantifying the composition and disorder of a semiconductor alloy at the unit cell scale with high accuracy. This is realized by considering, next to the out-of-plane, also the in-plane lattice parameter component allowing to separate the chemical composition from the strain field. Considering only the out-of-plane lattice parameter component not only yields large deviations from the true local alloy content but also carries the risk of identifying false ordering phenomena like formations of chains or platelets. Our method is demonstrated on image simulations of relaxed supercells, as well as on experimental images of an In{sub 0.20}Ga{sub 0.80}N quantum well. Principally, our approach is applicable to all epitaxially strained compounds in the form of quantum wells, free standing islands, quantum dots, or wires.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Thermal expansion recovery microscopy: Practical design considerations

A detailed study of relevant parameters for the design and operation of a photothermal microscope technique recently introduced is presented. The technique, named thermal expansion recovery microscopy (ThERM) relies in the measurement of the defocusing introduced by a surface that expands and recovers upon the heating from a modulated source. A new two lens design is presented that can be easily adapted to commercial infinite conjugate microscopes and the sensitivity to misalignment is analyzed. The way to determine the beam size by means of a focus scan and the use of that same scan to verify if a thermoreflectance signal is overlapping with the desired ThERM mechanism are discussed. Finally, a method to cancel the thermoreflectance signal by an adequate choice of a nanometric coating is presented.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Nanosecond switching in GeSe phase change memory films by atomic force microscopy

Nanosecond scale threshold switching is investigated with conducting atomic force microscopy (AFM) for an amorphous GeSe film. Switched bits exhibit 2–3 orders of magnitude variations in conductivity, as demonstrated in phase change based memory devices. Through the nm-scale AFM probe, this crystallization was achieved with pulse durations of as low as 15 ns, the fastest reported with scanning probe based methods. Conductance AFM imaging of the switched bits further reveals correlations between the switched volume, pulse amplitude, and pulse duration. The influence of film heterogeneities on switching is also directly detected, which is of tremendous importance for optimal device performance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Structural defects in epitaxial graphene layers synthesized on C-terminated 4H-SiC (0001{sup ¯}) surface—Transmission electron microscopy and density functional theory studies

The principal structural defects in graphene multilayers synthesized on the carbon-terminated face of a 4H-SiC (0001{sup ¯}) substrate were investigated using the high-resolution transmission electron microscopy. The analyzed systems include a wide variety of defected structures such as edge dislocations, rotational multilayers, and grain boundaries. It was shown that graphene layers are composed of grains of the size of several nanometres or larger; they differ in a relative rotation by large angles, close to 30°. The structure of graphene multilayers results from the synthesis on a SiC (0001{sup ¯}) surface, which proceeds via intensive nucleation of new graphene layers that coalesce under various angles creating an immense orientational disorder. Structural defects are associated with a built-in strain resulting from a lattice mismatch between the SiC substrate and the graphene layers. The density functional theory data show that the high-angular disorder of AB stacked bi-layers is not restoring the hexagonal symmetry of the lattice.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗