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At least 1,153 records · Page 64

Effect of water on hydrogen permeability

Doping of hydrogen with CO and CO2 was developed to reduce hydrogen permeation in Stirling engines by forming a low permeability oxide coating on the inner surface of the heater head tubes. Although doping worked well, under certain circumstances the protective oxide could be chemically reduced by the hydrogen in the engine. Some oxygen is required in the hydrogen to prevent reduction. Eventually, all the oxygen in the hydrogen gas - whatever its source - shows up as water. This is the result of hydrogen reducing the CO, CO2, or the protective inner surface oxides. This water can condense in the engine system under the right conditions. If the concentration of water vapor is reduced to a low enough level, the hydrogen can chemically reduce the oxide coating, resulting in an increase in permeability. This work was done to define the minimum water content required to avoid this reduction in the oxide coating. The results of this testing show that a minimum of approximately 750 ppm water is required to prevent an increase in permeability of CG-27, a high temperature metal alloy selected for Stirling engine heater tubes.

Hulligan, David↗

Transport properties for carbon chain sandwiched between heteroatom-doped carbon nanotubes with different doping sites

The First-principles calculation is used to investigate the transport properties of a carbon chain connected with N-and/or B-doped caped carbon nanotube acting as electrodes. The I-V curves of the carbon chain are affected by the N/B doping sites, and rectifying behavior can be obtained distinctly when the carbon chain is just connected onto two doping atom sites (N- chain-B), and a weak rectification occurs when N (B) doping at other sites. Interestingly, the spin-filtering effects exist in the junction when it is doped at other sites, undoped system, or N-terminal carbon chains. However, no this behavior is found in N-chain-B and B-chain-B systems. The analysis on the transmission spectra, PDOS, LDOS, spin density, and the electron transmission pathways give an insight into the observed results for the system.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Magnetic, electrical and structural properties of the Re-doped ruthenocuprate Ru{sub 1−x}Re{sub x}Sr{sub 2}GdCu{sub 2}O{sub y}

Highlights: • We investigated the effect of the dilution of magnetic Ru sub-lattice of RuSr{sub 2}GdCu{sub 2}O{sub 8}. • We synthesized the doped compound Rui{sub x}Re{sub x}Sr{sub 2}GdCu{sub 2}O{sub y}, for 3%, 6%, 9% and 12% Re. • Re would affect the electron coupling: just 3 and 6% samples were superconductor. • Superconductivity emergence strongly affects magnetic properties of 3 and 6% samples. • A weak ferromagnetic component is consistent with a globally antiferromagnetic system. - Abstract: Despite the discovery of new superconductors classes, high-Tc oxides continue to be a current topic, because of their complex phase diagrams and doping-dependant effects (allowing one to investigate the interaction between orbitals), as well as structural properties such as lattice distortion and charge ordering, among many others. Ruthenocuprates are magnetic superconductors in which the magnetic transition temperature is much higher than the critical superconducting temperature, making them unique compounds. With the aim of investigating the dilution of the magnetic Ru sub-lattice, we proposed the synthesis of the Ru{sub 1−x}Re{sub x}Sr{sub 2}GdCu{sub 2}O{sub y} ruthenocuprate-type family, adapting the known two-step process (double perovskite + CuO) by directly doping the double perovskite, thus obtaining the perovskite compound Sr{sub 2}GdRu{sub 1−x}Re{sub x}O{sub y}, which represents a new synthesis process to the best of our knowledge. Our samples were structurally characterized through X-ray diffraction, and the patterns were analysed via Rietveld refinement. A complete magnetic characterization as a function of temperature and applied field, as well as transport measurements were carried out. We discuss our results in the light of the two-lattice model for ruthenocuprates, and a relation between RuO{sub 2} (magnetic) and CuO{sub 2} (superconductor) sub-lattices can clearly be observed.

36 MATERIALS SCIENCE↗

What is the valence of Mn in Ga 1-x Mn x N?

Motivated by the potential high Curie temperature of Ga 1-x Mn x N, we investigate the controversial Mn valence in this diluted magnetic semiconductor. From a first-principles Wannier-function analysis of the high energy Hilbert space, we find unambiguously the Mn valence to be close to 2+(d 5 ), but in a mixed spin configuration with average magnetic moments of 4µ B . By integrating out high-energy degrees of freedom differently, we further demonstrate the feasibility of both effective d 4 and d 5 descriptions. These two descriptions offer simple pictures for local and extended properties of the system, and highlight the dual nature of its doped hole. Specifically, in the effective d 5 description, we demonstrate novel physical effects absent in previous studies. Thus, our derivation highlights the richness of low-energy sectors in interacting many-body systems and the generic need for multiple effective descriptions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Radiation hardening in sol-gel derived Er{sup 3+}-doped silica glasses

The aim of the present paper is to report the effect of radiation on the Er{sup 3+}-doped sol-gel silica glasses. A possible application of these sol-gel glasses could be their use in harsh radiation environments. The sol-gel glasses are fabricated by densification of erbium salt-soaked nanoporous silica xerogels through polymeric sol-gel technique. The radiation-induced attenuation of Er{sup 3+}-doped sol-gel silica is found to increase with erbium content. Electron paramagnetic resonance studies reveal the presence of E′{sub δ} point defects. This happens in the sol-gel aluminum-silica glass after an exposure to γ-rays (kGy) and in sol-gel silica glass after an exposure to electrons (MGy). The concentration levels of these point defects are much lower in γ-ray irradiated sol-gel silica glasses. When the samples are co-doped with Al, the exposure to γ-ray radiation causes a possible reduction of the erbium valence from Er{sup 3+} to Er{sup 2+} ions. This process occurs in association with the formation of aluminum oxygen hole centers and different intrinsic point defects.

36 MATERIALS SCIENCE↗

The effects of MnO{sub 2} addition on the structure and dielectric properties of the strontium barium niobate glass-ceramics

Highlights: • A small amount of MnO{sub 2} doping the SBN-glass-ceramics makes BDS reach to 1470.6 kV/cm. • The theoretical energy storage density of the SBN-glass-ceramics with MnO{sub 2} addition gets 9.2 J/cm{sup 3}. • A small amount MnO{sub 2} doping the BSN-glass-ceramics makes the leakage current densities decrease to 10{sup −6} A/cm{sup 2}. • A small amount of MnO{sup 2} doping the SBN-glass-ceramics can effectively decrease the dielectric loss of the materials. - Abstract: The effects of MnO{sub 2} content on the structure and dielectric properties of the SBN-glass-ceramics were studied. The results show that a small amount of MnO{sub 2} doping of the SBN-glass-ceramics can make their microstructure become denser and more uniform and MnO{sub 2} doping of the SBN-glass-ceramics, as a grain growth inhibitor, has an evident effect on the reduction of grain sizes. The Mn ions exist in the form of Mn{sup 3+} and Mn{sup 4+} ions in the SBN-glass-ceramics, as confirmed by XPS measurements and Mn{sup 3+} and Mn{sup 4+} ions easily form charge defect complexes, which causes the leakage current densities of the SBN-glass-ceramics to obviously decrease. And a small amount of MnO{sub 2} doping of the SBN-glass-ceramics can effectively decrease the dielectric loss of the materials. When 0.05 mol% MnO{sub 2} is added to the SBN-glass-ceramics, the BDS is up to 1470.6 kV/cm and the theoretical energy storage density reaches the maximum value of 9.2 J/cm{sup 3}.

36 MATERIALS SCIENCE↗

Chemisorption-induced n-doping of MoS{sub 2} by oxygen

Both chemisorption and physisorption affect the electronic properties of two-dimensional materials, such as MoS{sub 2}, but it remains a challenge to probe their respective roles experimentally. Through repeated in-situ electrical measurements of few-layer MoS{sub 2} field-effect transistors in an ultrahigh vacuum system with well-controlled oxygen partial pressure (6 × 10{sup −8} mbar–3 × 10{sup −7} mbar), we were able to study the effect of chemisorption on surface defects separately from physically adsorbed oxygen molecules. It is found that chemisorption of oxygen results in n-doping in the channel but negligible effect on mobility and on/off ratio of the MoS{sub 2} transistors. These results are in disagreement with the previous reports on p-doping and degradation of the device's performance when both chemisorption and physisorption are present. Through the analysis of adsorption-desorption kinetics and the first-principles calculations of electronic properties, we show that the experimentally observed n-doping effect originates from dissociative adsorption of oxygen at the surface defects of MoS{sub 2}, which lowers the conduction band edge locally and makes the MoS{sub 2} channel more n-type-like as compared to the as-fabricated devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Effective Mass from Seebeck Coefficient

Abstract Engineering semiconductor devices requires an understanding of the effective mass of electrons and holes. Effective masses have historically been determined in metals at cryogenic temperatures estimated using measurements of the electronic specific heat. Instead, by combining measurements of the Seebeck and Hall effects, a density of states effective mass can be determined in doped semiconductors at room temperature and above. Here, a simple method to calculate the electron effective mass using the Seebeck coefficient and an estimate of the free electron or hole concentration, such as that determined from the Hall effect, is introduced here is the Seebeck effective mass, n H is the charge carrier concentration measured by the Hall effect ( n H = 1/ eR H , R H is Hall resistance) in 10 20 cm −3 , T is the absolute temperature in K, S is the Seebeck coefficient, and k B / e = 86.3 μV K −1 . This estimate of the effective mass can aid the understanding and engineering of the electronic structure as it is largely independent of scattering and the effects of microstructure (grain boundary resistance). It is particularly helpful in characterizing thermoelectric materials.

Snyder, Gerald Jeffrey↗

Impact of Rare Earth Gd{sup 3+} Ions on Structural and Magnetic Properties of Ni{sub 0.5}Zn{sub 0.5}Fe{sub 2−x}Gd{sub x}O{sub 4} Spinel Ferrite: Useful for Advanced Spintronic Technologies

In this article, we have synthesized the Gd{sup 3+}-doped Ni{sub 0.5}Zn{sub 0.5}Fe{sub 2−x}Gd{sub x}O{sub 4} (x = 0.05, 0.07, 1.0) ferrite samples using solid-state reaction route. The effects of Gd{sup 3+} doping on structural, vibrational, electrical and magnetic properties were studied. Structural and vibrational properties were characterized by x-ray diffraction (XRD), Raman, and FTIR spectroscopy. XRD data indicate that the Ni{sub 0.5}Zn{sub 0.5}Fe{sub 2−x}Gd{sub x}O{sub 4} ceramics crystallize in single-phase spinel cubic (Fd3m space group) structure. Infrared spectra show two strong absorption bands in the frequency range of 400–600 cm{sup −1} which were, respectively, attributed to tetrahedral and octahedral sites of the spinel ferrite. All the prepared samples show the typical dielectric dispersion having Maxwell–Wagner-type interfacial polarization. Decrease in dielectric constant and loss tangent has been observed with frequency and doping concentration. M − H plots reveal that all the samples exhibit ferrimagnetic nature at room temperature. A significant increase in the saturation magnetization has been observed upon the substitution of Gd{sup 3+} ions. All the as-prepared samples are isotropic and soft magnetic materials. These ferrite compounds are advantageous in advanced high-density data storage and high-frequency devices applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Investigation of Pristine and (Mo, W)-Doped Cu 11 V 6 O 26 for Use as Photoanodes for Solar Water Splitting

The development of new and inexpensive semiconductor electrodes that possess suitable bandgap energies and band positions for solar water splitting is of great interest in the field of solar fuel production. In this study, n-type Cu 11 V 6 O 26 that has a bandgap energy of 1.9 eV was produced as a pure, high quality photoanode and its properties and stability for photoelectrochemical water splitting were systematically investigated in pH 9.2 and pH 13 solutions. As Cu 11 V 6 O 26 photoanodes appeared to suffer from poor charge transport properties, Mo and W-doping into the V site were also examined, which considerably improved the photocurrent generation of Cu 11 V 6 O 26 . Furthermore, the bandgap energy, band edge positions, flatband potential, photocurrent generation, and photostability of pristine and doped Cu 11 V 6 O 26 electrodes are discussed in comparison to elucidate the effect of Mo- and W-doping and to evaluate the promise and limitations of Cu 11 V 6 O 26 as a photoanode for use in a water splitting photoelectrochemical cell.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Pressure-Modulated Energy Transfer Dynamics in Mn 2+ -Doped CdS/ZnS Core/Shell Quantum Dots

Transition metal doping in semiconductor quantum dots (QDs) significantly impacts their optical properties, thus expanding the range of their potential optoelectronic applications. This study investigates the pressure-dependent energy transfer dynamics in Mn 2+ -doped CdS/ZnS core/shell QDs, focusing on how external hydrostatic pressure modulates these dynamics and optical properties. By synthesizing Mn 2+ -doped QDs with varying Mn 2+ doping concentrations, we explore the effects of the pressure on photoluminescence (PL) spectra and energy transfer efficiency. Our study reveals that increasing pressure induces a blueshift in the QD host bandgap PL and a redshift in the Mn 2+ dopant PL. The pressure-induced shifts highlight a unique modulation mechanism where the energy transfer efficiency decreases with pressure due to reduced wave function overlap between host excitons and Mn 2+ dopants. Detailed analysis of the PL quantum yields and energy transfer rate constants provides insights into these dynamics, suggesting that the pressure can effectively and reversibly regulate the energy transfer efficiencies and rates. In conclusion, these results have implications for developing pressure-sensitive configurable devices and exploring pressure-induced phenomena in doped nanomaterials.

36 MATERIALS SCIENCE↗

Trends in Adsorption Energies of the Oxygenated Species on Single Platinum Atom Embedded in Carbon Nanotubes

Herein we study the effect of strain on the catalytic activity of different Pt-doped single wall metallic carbon nanotubes (SWCNT) towards the oxygen reduction reaction (ORR). We consider the possibility of the Pt-doped at single vacancy inside the SWCNT to investigate the effect of confinement on the reaction mechanism. Density functional theory calculations indicate that for the SWCNTs with tube diameters below 7 Å, the strain energy varies significantly influencing the adsorption energies of the key intermediates of the ORR reaction. For the SWCNTs with tube diameters above 7 Å, on the other hand, both the calculated strain and the adsorption energies are almost constant. We furthermore find that the adsorption energies are strongly affected by confinement effects as shown for Pt-doped systems that are located inside the SWCNT. We show that the Pt-doped at single vacancy of the SWCNT strongly binds the oxygenated species under ORR potentials and therefore the active species is covered by oxo- or hydroxo group. Because the presence of Pt atoms doped at the single and double vacancies of the SWCNT is equivalently probable we also studied the Pt-doped at double vacancy. We find that the most active motif is the Pt-doped at double vacancy of SWCNT with 0.24V overpotenital.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Uncommon Behavior of Li Doping Suppresses Oxygen Redox in P2-Type Manganese-Rich Sodium Cathodes

Utilizing both cationic and anionic oxygen redox reactions is regarded as an important approach to exploit high-capacity layered cathode materials with earth abundant elements. It has been popular strategies to effectively elevate the oxygen redox activities by Li-doping to introduce unhybridized O 2p orbitals in Na x MnO 2 -based chemistries or enabling high covalency transition metals in P2-Na 0.66 Mn x TM 1-x O 2 (TM = Fe, Cu, Ni) materials. Here, we investigated the effect of Li doping on regulating the oxygen redox activities P2-structured Na 0.66 Ni 0.25 Mn 0.75 O 2 materials. Systematic X-ray characterizations and ab initio simulations have shown that the doped Li has uncommon behavior in modulating the density of states of the neighboring Ni, Mn and O, leading to the suppression of the existing oxygen and Mn redox reactivities and the promotion of the Ni redox. Furthermore, the findings provide a complementary scenario to current oxygen redox mechanisms and shed lights on developing new routes for high-performance cathodes.

25 ENERGY STORAGE↗

Leveraging Curvature on N–Doped Carbon Materials for Hydrogen Storage

Carbon sorbent materials have shown great promise for solid-state hydrogen (H 2 ) storage. Modification of these materials with nitrogen (N) dopants has been undertaken to develop materials that can store H 2 at ambient temperatures. In this work density functional theory (DFT) calculations are used to systematically probe the influence of curvature on the stability and activity of undoped and N-doped carbon materials toward H binding. Specifically, four models of carbon materials are used: graphene, [5,5] carbon nanotube, [5,5] D 5d -C 120 , and C 60 , to extract and correlate the thermodynamic properties of active sites with varying degrees of sp 2 hybridization (curvature). From the calculations and analysis, it is found that graphitic N-doping is thermodynamically favored on more pyramidal sites with increased curvature. In contrast, it is found that the hydrogen binding energy is weakly affected by curvature and is dominated by electronic effects induced by N-doping. These findings highlight the importance of modulating the heteroatom doping configuration and the lattice topology when developing materials for H 2 storage.

08 HYDROGEN↗

Engineering Na‐Rich P2‐Type Layered Oxides Through Li/Ti Dual Doping for Oxygen Redox Activation and Superior Structural Stability

Sodium layered oxides Na x MO 2 (x ≤ 1 and M = transition metal ions) have gained significant interest as sodium-ion battery (NIB) cathodes owing to their high operating voltages and potential for higher energy density compared with polyanion and Prussian blue–type cathodes. However, their practical applications are often hindered by the irreversible structural transitions leading to capacity fading during cycling. The nature and substitution of transition metal ions define the material properties and electrochemical performance. In this study, through comprehensive electrochemical characterization combined with multi-scale structural and spectroscopical analyses, we demonstrate the synergistic impacts of Lithium and Titanium doping, which not only increases overall capacity by boosting cation and anion cooperative redox contributions but also improves the rate capability and cycling stability. Specifically, Li + doping enhances the available sodium inventory for extraction, while Ti 4+ disrupts Na + /vacancy ordering at lower voltages (< 4 V) and mitigates the detrimental P2→OP4/O2 phase transition during cycling. The combined effect of Lithium and Titanium doping promotes more charge localization on Oxygen, which activates reversible lattice oxygen redox reactions at elevated voltages, contributing additional capacity beyond conventional cationic redox. This work provides crucial insights into the design of high-performance, high-capacity P2-type layered cathode materials for sodium-ion batteries.

36 MATERIALS SCIENCE↗

Single crystal growth and electronic structure of Rh-doped Sr 3 Ir 2 O 7

Ruddlesden-Popper iridate Sr 3 Ir 2 O 7 is a spin–orbit coupled Mott insulator. Hole doped Sr 3 Ir 2 O 7 provides an ideal platform to study the exotic quantum phenomena that occur near the metal–insulator transition (MIT) region. Rh substitution of Ir is an effective method to induce hole doping into Sr 3 Ir 2 O 7 . However, the highest doping level reported in Sr 3 (Ir 1− x Rh x ) 2 O 7 single crystals was only around 3%, which is far from the MIT region. In this paper, we report the successful growth of single crystals of Sr 3 (Ir 1− x Rh x ) 2 O 7 with a doping level of ~ 9%. The samples have been fully characterized, demonstrating the high quality of the single crystals. Transport measurements have been carried out, confirming the tendency of MIT in these samples. The electronic structure has also been examined by angle-resolved photoemission spectroscopy (ARPES) measurements. Our results establish a platform to investigate the heavily hole doped Sr 3 Ir 2 O 7 compound, which also provide new insights into the MIT with hole doping in this material system.

Physics↗

Optical suppression of defect-related photoluminescence in GeSn

Reports of photoluminescence from GeSn grown on Ge substrates by molecular beam epitaxy have been limited. We find that one limiting factor to observing photoluminescence is due to localized defect states marked by photoluminescence at 2400 nm and originating from the Ge substrate and buffer layer. In this study, we report on an optical study utilizing doped Ge(001) substrates to effectively suppress defect-related photoluminescence in GeSn layers by filling localized defect trap states. For this experiment, a GeSn layer with Sn content up to 10.5 ± 0.5% was grown on a doped Ge(001) substrate. Analysis of the physics of the photoluminescence spectrum collected from the GeSn thin film shows an emission at the expected wavelength of 2300 nm for 10.5 ± 0.5% Sn content and the absence of the typically observed defect-related signal at 2400 nm. This understanding is further confirmed using short-pulse optical excitation of the GeSn grown on undoped Ge substrates.

Chemical vapor deposition↗